• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.3
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• pp.40-49
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• 2011

This paper presents novel circuit topology of half-bridge soft-switching PWM inverter type DC-DC high power converter for DC bus feeding power plants. The proposed DC-DC power converter is composed of a typical voltage source-fed, half-bridge high frequency PWM inverter with a high frequency planar transformer link PWM control scheme and parallel capacitive lossless snubbers. The operating principle of the new DC-DC converter treated here is described by using switching mode-equivalent circuits, together with its unique features. All the active power switches in the half-bridge arms and input DC bus lines can achieve ZCS turn-on and ZVS turn-off commutation transitions. The total turn-off switching losses of the power switches can be significantly reduced. As a result, high switching frequency IGBTs can actually be selected in the frequency range of 40[kHz] under the principle of soft-switching. The performance evaluations of the experimental setup are illustrated practically.

• 전기의세계
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• v.20 no.6
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• pp.7-18
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• 1971

Secondary-side transfer phenomena of primary-side surge voltage in concentric-cylindrical transformers of a high turn-ratio still present a problem in transformer insulation design even in the case of a neutral solid-grounding type. The conventional methods of analyzing them so far are much complicated for practical applications. Therefore, this paper describes a new approach to the analysis of secondary-side transfer phenomena of surge in concentric-cylindrical transformers of high turn-ratio and solid-grounding type. This generalized approach is thought to be more simple with the use of minor network concepts than the conventional one by major network only. The result shows that the secondary-side transfer phenomena of surge voltage could not be neglected even in concentric-cylindrical transformer of high turn-ratio and solid-grounding type, and will be satisfactorily applicable to the design of neutral-solid-grounding type transformers.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.417-420
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• 1998

In this paper the formation mechanism of tail current is analyzed and its effect on GTO turn-off performance is given. The conclusion is that the large tail current will considerably increase the turn-off loss $E_{off}$ and cause the re-triggering during GTO's off-switching, therefore the best design criterion is that the tail current of power GTO must be as low as possible.w as possible.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.12
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• pp.65-71
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• 1996

A novel lateral field emitter triode has been designed and fabricated. It has self-vacuum environmets and low turn-on voltage, so that the chief problems of previous field emission devices such as additional vacuum sealing process and high turn-on voltage are settled. An in-situ vaccum encapsulation empolying recessed cavities by isotropic RIE (reactive ion etch) method and an electron beam evaporated molybdenum vacuum seals are implemented to fabricate the new field emitter triode. The device exhibits low turn-on voltage of 7V, stabel current density of 2.mu.A/tip at V$_{AC}$ = 30V, and high transconductance (g$_{m}$) of 1.7$\mu$S at V$_{AC}$ = 22V. The superb device characteristics are probably due to sub-micron dimension device structure and the pencil type lateral cathode tip employing upper and lower LOCOS oxidation.

• Proceedings of the KIPE Conference
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• 1999.07a
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• pp.663-666
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• 1999

This paper describes a three-phase converter with high power factor using a scheme of discontinuous current mode(DCM). The proposed system can replace the conventional diode bridge with step-up chopper which is used as a converter for adjustable speed drive. In this system, the current of reactor is zero at turn-on instance because of operation in DCM, while the switch turns off at the instance of maximum current. A soft-switching scheme with lossless snubber was proposed. Therefore, a zero-voltage switching at turn off can be achived by lossless snubber and zero-current switching at turn on can be obtained by operating under DCM. A theoretical analysis and computer simulations with PSpice were done to verify the operation of the proposed system. Also a prototype of hardware system was built and tested for verifying the feasibility of proposed system.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.49 no.10
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• pp.524-530
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• 2000

This paper presents a transformer protective relaying algorithm using the ratio of induced voltages. The proposed algorithm calculates primary and secondary voltage from currents and voltages of primary and secondary windings. The ratio of primary and secondary induced voltages is equal to the turn ratio in case of the steady state and magnetic inrush. On the other hand, the ratio is different form the turn ratio in case of internal winding faults. The algorithm does not require B-H curve and can reduce the relay's operating time.

• JOURNAL OF ELECTRICAL WORLD
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• s.255
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• pp.76-83
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• 1998

대용량 파워일렉트로닉스기기의 보다 대용량화$\cdot$소형경량화 및 저손실화 요구에 응하기 위하여 조지전압 4.5KV, 가제어전류 4KA의 고내압$\cdot$대용량 CGT(gate commutated turn-off : 게이트 전류형 턴오프) 사이리스터를 개발하여 상품화하였다. GCT사이리스터는 대용량 파워일렉트로닉스기기의 키파트로서 폭넓게 사용되고 있는 GTO(Gate turn-off)사이리스터와 Turn-on동작이 같고 gto사이리스터의 이점이 저On전압특성을 그대로 갖는 한편 턴오프동작은 ''턴오프 게인이 1''인 새로운 원리에 기초하고 있으며 턴오프특성에서는 GTO사이리스터에 비해 다음과 같은 특징을 갖고있다. (1)GTO사이리스터응용에서 턴오프시 dv/dt를 억제하기 위하여 필요한 스나버회로가 없어도 턴오프동작이 가능하다. (2)축적시간을 종래 GTO사이리스터의 약 1/10로 저감할 수 있다. (3)게이트축적전하를 종래의 GTO사이리스터의 약 1/2로 저감할 수 있다. 이러한 턴오프특성에 의하여 GCT사이리스터는 대용량 파워 일렉트로니스기기에 스나버회로 손실발생의 억제에 의한 손실의 저감, 고속동작화, 직병렬접속 응용에 의한 대용량화의 용이성, 게이트구동회로의 용량을 반감하는 등 많은 메리트를 가져다 준다.

• Proceedings of the KSMRM Conference
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• 2001.11a
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• pp.146-146
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• 2001

목적： 해상도가 우수한 경직장 영상을 위한 소아용 two-turn 표면형 수신 코일, 안장 수신 코일을 제작하여 이를 이용하여 얻은 고양이의 경직장 영상을 비교한다. 대상 및 방법： 지금까지 소아의 경직장 영상은 주로 초음파를 이용하여 얻었으나 해상도가 떨어지며 아직까지 소아용 탐촉자는 개발되지 않았다. 소아의 항문직장 기형의 진단을 위해서는 해상도가 우수한 영상이 필요하고, 이를 위해 소아용 직장 RF 코일로 원주형 two-turn 표면형 코일, 안장 코일을 제작하였다. 크기는 직경 7mm, 길이 6cm와, 직경 10mm, 길이 l0cm 하였고, 코일의 구리선 바깥으로는 두께 1mm의 테프론 tube로 감쌌다. 균일한 시험 시료(phantom)로 마요네즈를 이용하여 T1 강조 영상(Spin echo TR/TE= 500/11 msec, FOV=12cm, 영상행렬 256$\times$256)을 얻어서 신호 강도의 profile을 얻는다. 이를 Mathematica를 이용하여 구한 RF 자기장 세기의 분포와 비교했다. 두 종류의 코일을 각각 사용하여 얻은 고양이 항문 괄약근 영상에서 외부 괄약근, 내부 괄약근 등을 구분, 비교하였다.

• Journal of Agricultural Extension & Community Development
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• v.7 no.1
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• pp.137-153
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• 2000

The purpose of this study was to develop long and short-run educational programs for u-turn farmers based on their need assesment. This study was conducted by review of literature and surveys. Subjects of this surveys were 310 participants of agricultural training programs developed by the Rural Development Administration for u-turn farmers in 1997 and 1998. According to major findings, many participants were faced with problems such as financial shortage, deficiency of farming skills, difficulty of marketing, new neighbours unfavourable gazing and farm labour shortage. These problems could be classified into the problems at their preparing stage and the problems of adjusting stage in their farms. And also the participants suggested that educational programs for them contain knowledge based teaching and technical practices with focus on their problems solving. With their suggestion various knowledge and technical modules were selected. Using these module several kinds of long and short-run educational programs could be developed.

• Journal of the Optical Society of Korea
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• v.18 no.4
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• pp.395-400
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• 2014

We proposed a method for fast turn-off switching of a vertically-aligned liquid crystal cell by low-temperature curing of the polymer structure. We confirmed that the turn-off times of the fabricated cells were reduced significantly as the curing temperature was lowered to $-20^{\circ}C$. We accounted for the effect of low-temperature curing on the turn-off time by using a mathematical model and by observing images obtained via scanning electron microscopy. We also confirmed that low-temperature curing is more effective in reducing the response time when the device is operated at a low temperature.