• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.8
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• pp.18-24
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• 2011

A new problem happens with the evolution of TSV based 3D IC design. The bonding process takes place which follows with the testing of design for proper connectivity in the absence of TSV redundancy. In order to achieve good yield, the design should be tested with redundancy TSV. This paper presents a wrapper cell design for redundancy TSV interconnect test. The design for test technique, in terms of hardware and software perspectives is described. The wrapper cell with hardware design can use original test patterns. However, software design has less area overhead.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.1
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• pp.131-136
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• 2013

TSV based 3D ICs have been widely developed with new problems at die and IC levels. It is imperative to test at post-bond as well as pre-bond to achieve high reliability and yield. This paper introduces a new testable design technique which not only test microscopic defects at TSV input/output contact at a die but also test interconnect defects at a stacked IC. IEEE 1500 wrapper cells are augmented and through at-speed tests for pre-bond die and post-bond IC, known-good-die and defect free 3D IC can be massively manufactured+.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.4
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• pp.592-597
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• 2015

3D-IC is a novel semiconductor packaging technique stacking dies to improve the performance as well as the overall size. TSV is ideal for 3D-IC because it is convenient for stacking and excellent in electrical characteristics. However, due to high-density and micro-size of TSVs, they should be tested with a non-invasive manner. Thus, we introduce a TSV test method on test prober without a direct contact in this paper. A capacitive coupling effect between a probe tip and TSV is used to discriminate small TSV faults like voids and pin-holes. Through EM simulation, we can verify the size of eye-patterns with various frequencies is good for TSV test tools and non-contact test will be promising.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.12
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• pp.1710-1715
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• 2014

In this paper, we propose a novel on-chip test logic for TSV fault detection in 3-dimensional integrated circuits. The proposed logic called OTT realizes the input signal delay-based TSV test method introduced earlier. OTT only includes one F/F, two MUXs, and some additional logic for signal delay. Thus, it requires small silicon area suitable for TSV testing. Both pre-bond and post-bond TSV tests are able to use OTT for short or open fault as well as small delay fault detection.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.226-235
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• 2016

The yield of 3D stacked IC manufacturing improves with the pre-bond integrity testing of through silicon vias (TSVs). In this paper, an efficient pre-bond test method is presented based on IEEE std. 1500, which can precisely diagnose any happening of TSV defects. The IEEE std. 1500 wrapper cells are augmented for the proposed method. The pre-bond TSV test can be performed by adjusting the driving strength of TSV drivers and the test clock frequency. The experimental results show the advantages of the proposed approach.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.3
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• pp.1-6
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• 2013

3D integrated circuit(IC) technology with TSV(through Si via) liquid cooling system is discussed. As a device scales down, both interconnect and packaging technologies are not fast enough to follow transistor's technology. 3D IC technology is considered as one of key technologies to resolve a device scaling issue between transistor and packaging. However, despite of many advantages, 3D IC technology suffers from power delivery, thermal management, manufacturing yield, and device test. Especially for high density and high performance devices, power density increases significantly and it results in a major thermal problem in stacked ICs. In this paper, the recent studies of TSV liquid cooling system has been reviewed as one of device cooling methods for the next generation thermal management.

• Journal of Welding and Joining
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• v.31 no.6
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• pp.77-83
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• 2013

3D packaging technology using TSV (Through Silicon Via)has been studied in the recent years to achieve higher performance, lower power consumption and smaller package size because electrical line is shorter electrical resistivity than any other packaging technology. To stack TSV chips vertically, reliable and robust bonding technology is required because mechanical stress and thermal stress cause fracture during the bonding process. Cu pillar/solder ${\mu}$-bump bonding process is usually to interconnect TSV chips vertically although it has weak shape to mechanical stress and thermal stress. In this study, we suggest Insert-Bump (ISB) bonding process newly to stack TSV chips. Through experiments, we tried to find optimal bonding conditions such as bonding temperature and bonding pressure. After ISB bonding, we observed microstructure of bump joint by SEM and then evaluated properties of bump joint by die shear test.

• ETRI Journal
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• v.36 no.2
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• pp.301-308
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• 2014

Three-dimensional integration technology results in area savings, platform power savings, and an increase in performance. Through-silicon via (TSV) assembly and manufacturing processes can potentially introduce defects. This may result in increases in manufacturing and test costs and will cause a yield problem. To improve the yield, spare TSVs can be included to repair defective TSVs. This paper proposes a new built-in self-test feature to identify defective TSV channels. For defective TSVs, this paper also introduces dynamic self-repair architectures using code-based and hardware-mapping based repair.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.140-140
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• 2013

3차원 실장을 위한 TSV의 제조 공정 중에 발생할 수 있는 Cu의 돌출 거동에 대해 연구하였다. Cu의 돌출은 반도체를 제조할 때 고온(>$350^{\circ}C$) 공정인 BEOL (back end of line) 중에 발생하는 현상이다. Cu의 돌출은 Si과 Cu의 열팽창계수 차이에 의해 발생하는 현상으로 고온 공정 뿐만아니라 열충격 시험과 같은 열피로에 의해서 발생할 수 있다. 따라서 본 연구에서는 $-65^{\circ}C$에서 15분과 $150^{\circ}C$에서 15분을 1 사이클로 설정하여 0, 250, 500, 1000 사이클의 열충격 시험을 수행하였다. 열충격 시험 후 각 사이클에서의 Cu 돌출 거동과 Cu의 표면 거칠기 변화에 대해 연구하였다.

• Korean Journal of Metals and Materials
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• v.48 no.6
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• pp.557-564
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• 2010

Formation of Sn through-silicon-via (TSV) and its interconnection processes were studied in order to form a three-dimensional interconnection structure of chip-stack packages. Different from the conventional formation of Cu TSVs, which require a complicated Cu electroplating process, Sn TSVs can be formed easily by Sn electroplating and reflow. Sn via-filling behavior did not depend on the shape of the Sn electroplated layer, allowing a much wider process window for the formation of Sn TSVs compared to the conventional Cu TSV process. Interlocking joints were processed by intercalation of Cu bumps into Sn vias to form interconnections between chips with Sn TSVs, and the mechanical integrity of the interlocking joints was evaluated with a die shear test.