• Journal of the Semiconductor & Display Technology
• /
• v.19 no.2
• /
• pp.77-81
• /
• 2020

Silicon wafer etching in micro electro mechanical systems (MEMS) fabrication is challenging to form 3-D structures. Well known Si-wet etch of silicon employs potassium hydroxide (KOH), tetramethylammonium hydroxide (TMAH) and sodium hydroxide (NaOH). However, the existing silicon wet etching process has a fatal disadvantage that etching of the back side of the wafer is hard to avoid. In this study, a wet etching bath for 150 mm wafers was designed to prevent back-side etching of silicon wafer, and we demonstrated the optimized process recipe to have anisotropic wet etching of silicon wafer without any damage on the backside. We also presented the design of wet bath for 300 mm wafer processing as a promising process development.

• Journal of the Microelectronics and Packaging Society
• /
• v.9 no.4
• /
• pp.25-29
• /
• 2002

We have fabricated a vertical trench Hall device which is sensitive to the magnetic field parallel to the sensor surface. The vertical trench Hall device has been built on SOI wafer which is produced by silicon direct bonding technology using bulk micromachining, where buried $SiO_2$ layer and surround trench define active device volume. Sensitivity up to 150 V/AT has been measured.

• Journal of the Korea Institute of Military Science and Technology
• /
• v.8 no.3 s.22
• /
• pp.83-91
• /
• 2005

Pyrolysis-mass spectrometry has been used to characterize the 17 biological materials including bacteria and proteins. In this study, an in situ thermal-hydrolysis methylation(THM) procedure using tetramethylammonium hydroxide(TMAH) was employed. The biological materials are ionized using chemical ionization(CI) method with ethanol by ion trap mass spectrometer(ITMS), which attached with our own made pyrolyzer module, and then their pyrolysis mass spectra were obtained. The major distinct characteristic peaks were selected from all the range of mass spectra, and analyzed using principal component analysis(PCA) method to assess the classification/identification possibility of biological materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.561-564
• /
• 2000

Silicon capacitive pressure sensor has been fabricated by using electrochemical etching stop and silicon-to-glass electrostatic bonding technique. A diaphragm structure is designed to compensate the nonlinear response. A cavity is etched into the silicon to the depth of 2$\mu\textrm{m}$ by anisotropic etching in 20wt.% TMAH solution at 80$^{\circ}C$. A fabricated sensor showed 3.3 pF zero-pressure capacitance, 297 pp.m/mmHg sensitivity, and a 7.4 7%F.S. nonlinear response in a 0-1 kgf/cm$^2$pressure range.

• Advances in materials Research
• /
• v.2 no.2
• /
• pp.99-109
• /
• 2013

In the present investigation, nanocomposite films with poly(methyl methacrylate) (PMMA) as a polymer matrix and barium titanate as a filler were prepared by solution casting method. Barium titanate nano particles were prepared using Ti(IV) triethanolaminato isopropoxide and hydrated barium hydroxide as precursors and tetra methyl ammonium hydroxide (TMAH) as a base. The nanocomposite films were characterized using XRD, FTIR, SEM and dielectric spectroscopy techniques. Dielectric measurements were performed in the frequency range 100 Hz-10 MHz. Dielectric constant of nanocomposites were found to depend on the frequency, the temperature and the filler fraction. Dissipation factors were also influenced by the frequency and the temperature but not much influenced by the filler fractions. The 10 wt% of BT-PMMA nanocomposite had the lowest dielectric constant of 3.58 and dielectric loss tangent of 0.024 at 1MHz and $25^{\circ}C$. The dielectric mixing model of Modified Lichtenecker showed the close fit to the experimental data.

• Journal of Sensor Science and Technology
• /
• v.30 no.1
• /
• pp.10-14
• /
• 2021

Wet etching is more economical than dry etching and provides a uniform etching depth regardless of wafer sizes. Typically, potassium hydroxide (KOH) and tetra-methyl-ammonium hydroxide (TMAH) solutions are widely used for the wet etching of silicon. However, there is a limit to the wet etching process when a material deposited on an unetched surface reacts with an etching solution. To solve this problem, in this study, an apparatus was designed and manufactured to physically block the inflow of etchants on the surface using a rubber O-ring. The proposed apparatus includes a heater and a temperature controller to maintain a constant temperature during etching, and the hydrostatic pressure of the etchant is considered for the thin film structure. A corrugation membrane with a diameter of 800 ㎛, thickness of 600 nm, and corrugation depth of 3 ㎛ with two corrugations was successfully fabricated using the prepared device.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.06a
• /
• pp.74.1-74.1
• /
• 2010

단결정 실리콘 태양전지 공정에서 이방성 습식 식각 용액을 이용하여 기판 표면에 피라미드 구조를 형성하는 것을 텍스쳐링이라고 한다. 실리콘 기판의 표면을 식각하여 요철구조를 만들어줌으로써 셀 내부로 입사되는 광량을 증가시켜 태양전지의 단락 전류 및 효율 향상 효과를 얻을 수 있다. 일반적인 태양전지 공정에서는 요철구조를 형성할 시 따로 마스크를 사용하지 않으며, 태양전지 급 웨이퍼를 절삭손상층 식각 한 후, 강염기성 용액과 알코올의 혼합용액에 담가서 이방성 식각을 실시하여 요철 구조를 형성한다. 본 연구는 기존의 텍스쳐링 공정에서 사용되는 대표적인 용액인 수산화칼륨(potassium hydroxide, KOH)과 알코올의 혼합용액과 사메틸수산화암모늄(Tetramethylammonium Hydroxide, TMAH)과 알코올의 혼합용액에 Triton X-100 계면활성제를 각각 첨가하여 실험을 진행하였다. 식각된 태양전지용 실리콘 기판의 표면은 주사전자현미경(Scanning Electron Microscope)을 통하여 관찰하였고, 분광광도계(UV/VIS/NIR Spectrophotometer)로 반사도 값을 측정하여 기판의 특성을 평가하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.11
• /
• pp.958-962
• /
• 2002

This paper reports on the fabrication of free-standing microstructures by DRIE (deep reactive ion etching). SOI (Si-on-insulator) structures with buried cavities are fabricated by SDB (Si-wafer direct bonding) technology and electrochemical etch-stop. The cavity was formed the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the formed cavity under vacuum condition at -760 mmHg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annealing (100$0^{\circ}C$, 60 min.), the SDB SOI structure with a accurate thickness and a good roughness was thinned by electrochemical etch-stop in TMAH solution. Finally, it was fabricated free-standing microstructures by DRIE. This result indicates that the fabrication technology of free-standing microstructures by combination SDB, electrochemical etch-stop and DRIE provides a powerful and versatile alternative process for high-performance bulk micromachining in MEMS fields.

• Proceedings of the KIEE Conference
• /
• 2001.07c
• /
• pp.1908-1910
• /
• 2001

본 논문은 마이크로머시닝 기술을 이용하여 lift-off 공정으로 패턴닝 한 후 TMAH (Tetramethylammonium Hydroxide) 용액으로 $5{\sim}100{\mu}m$ 두께의 실리콘 다이어프램을 제작하였다. Pt/Ti 박막을 HF 전해질의 mask 물질로 사용하여 HF 용액 내에서 전기화학적 방법으로 정전압을 인가, 다이어프램 영역에 다공질 실리콘을 성장시켜 관통하였다. 140$^{\circ}C$의 질소 분위기에서 $10{\sim}15{\mu}m$두께의 LDPE(Low Density Poly Ethylene) 필름을 물리적으로 다이어프램 영역에 코팅하고 $K_2CO_3$ 용액내에서 ${CO_3}^{2-}$ 이온의 barrier에 의한 전류의 감소를 전기화학적인 분석방법에 의하여 측정하였다. 일정 전압하에서 이온 농도에 기인하는 다공질 실리콘과 LDPE 표면에서 Barrier의 두께에 따른 저항의 증가를 전극으로 감지하여 농도-전류의 특성을 측정하고 이것을 기준으로 하여 미지농도의 $K_2CO_3$ 용액내의 ${CO_3}^{2-}$ 이온 농도를 측정하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.830-833
• /
• 2003

This paper describes the fabrication and characteristics of 3C-SiCOI sotctures by SDB and etch-back technology for high-temperature MEMS applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si(001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The wafer bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR. The strength of the bond was measured by tensile strengthmeter. The bonded interface was also analyzed by SEM. The properties of fabricated 3C-SiCOI structures using etch-back technology in TMAH solution were analyzed by XRD and SEM. These results indicate that the 3C-SiCOI structure will offers significant advantages in the high-temperature MEMS applications.