• Title/Summary/Keyword: TLM method

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An Efficient Analysis Method for Planar Microstrip Transmission Line (플라나 마이크로스트립 전송선의 효율적 해석 방법)

  • Kim, Tae-Won
    • 전자공학회논문지 IE
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    • v.45 no.2
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    • pp.13-19
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    • 2008
  • The main advantage of the TLM analysis method is the ease with which even the most complicated transmission line structures. In this paper, using symmetrical condensed node(SCN), the TLM numerical technique has been successfully a lied to microstrip meander line. A detailed technique of the symmetrical condensed node(SCN) may be used to model planar microstrip transmission line is presented. Also, the S-parameters $S_{11}$ and $S_{21}$ of two types of microstrip meander line have been computed. From obtained results, TLM analysis is shown to be an efficient method for modeling complicated structure of planar microstrip transmission line. The TLM results presented here are useful in the design of microwave integrated circuits at higher frequencies region.

Analysis of Soret-type Fresnel Zone Plate Lens Antenna using TLM method (TLM법을 이용한 Soret 타입 프레넬 존 플레이트 렌즈 안테나 해석)

  • Kim, Tae-Yong;Jo, Heung-Kuk
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.15 no.6
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    • pp.1221-1226
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    • 2011
  • In order to analyze the receiver gain characteristic of the Soret-type FZPL lens antenna which is operated at 12GHz, TLM method can be applied. The application of the FZPL lens antenna is often use the receiver for satellite TV system, radio telescope, and Geodetic System. Some numerical results computed by TLM method are compared with Kirchhoff's approximation and PO method. The focal characteristic of receiver gain on main axis of the FZPL is mostly shown at the front side, which means that the position of the receiver should be properly calibrated.

Analysis of 3-Dimensional TLM for Step Discontinuity Microstrip Line (스텝 불연속 마이크로스트립 라인의 3차원 TLM 해석)

  • 김태원
    • Journal of the Korea Society of Computer and Information
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    • v.8 no.2
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    • pp.88-96
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    • 2003
  • Microstrip line is one of the most essential elements of microwave and milimeter-wave integrated circuits. And then the frequency dependent characteristics of the microstrip line have previously been analyzed using several frequency domain approaches But the 3-D TLM method presented in this Paper is another independent approaches for obtaining frequency domain results for microstrip line. The structure analysed with this TLM algorithm is step discontinuity microstrip line and the symmetrical condensed node is used. After numerical analysis, the frequency dependent scattering Parameters of a step discontinuity microstrip line have been calculated by Fourier transform of the time domain data. From the time domain TLM numerical results. this numerical analysis is shown to be an efficient method for modelling complicated structure as step discontinuity microstrip line.

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2-Dimensional Analysis of Fresnel Zone Plate Antenna (2차원 프레넬 존 플레이트 안테나 해석)

  • Kim, Tae-Yong;Jo, Heung-Kuk
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2011.05a
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    • pp.55-57
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    • 2011
  • TLM method to analyize receiver gain characteristic of the FZPL antenna which is operated at 12GHz and can be applied to satellite TV system, radio telescope, and Geodetic System. Some numerical results computed by TLM method are compared with Kirchhoff's approximation and PO method. As a result, receiver gain characteristic on main axis of the 12GHz FZPL antenna is shown at the front side, which means that the focal length is 15% shorter than designed focal length.

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Analysis of Step Discontinuity Microstrip Line Using SCN-TLM Method (SCN-TLM법을 이용한 스텝 불연속 마이크로스트립 라인 해석)

  • Kim, T.W.;Shin, Y.J.;Kim, Y.S.;Lee, S.H.
    • Proceedings of the IEEK Conference
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    • 2007.07a
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    • pp.477-478
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    • 2007
  • The SCN-TLM method presented in this paper is another independent approaches for obtaining frequency domain results for microstrip line. The structure analysed with this TLM algorithm is step discontinuity microstrip line and the symmetrical condensed node is used. After numerical analysis, the frequency dependent scattering parameters of a step discontinuity microstrip line have been calculated by Fourier transform of the time domain data. From the time domain TLM numerical results, this numerical analysis is shown to be an efficient method for modelling complicated structure as step discontinuity microstrip line.

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3D Finite Element Analysis of Nonlinear Magnetostatic Problem Using the Transmission Line Modeling(TLM) Method (TLM법을 이용한 3차원 비선형 정자계 해석)

  • Im, Chang-Hwan;Kim, Hong-Hyu;Jung, Hyun-Kyo
    • Proceedings of the KIEE Conference
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    • 1999.07a
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    • pp.70-72
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    • 1999
  • 일반적으로 비선형 정자계 문제를 해석하기 위해서 뉴튼-�N슨(Newton -Raphson : NR)법이 이용된다. 하지만 뉴튼-�N슨법의 경우 각 반복계산 때마다 새로운 선형 시스템의 해를 구하기 위해서 LU-decomposition과 같은 과정을 매 반복계산 때마다 시행해야 하므로 절점(node)의 수가 증가할 경우 계산시간이 증가한다는 단점이 있다. 이러한 단점을 보완하기 위해서 최근 TLM (Transmission Line Modeling)법이 새로운 반복계산법으로 비선형 유한 요소 해석에 적용되었으며 뉴튼-�N슨법에 비해 훨씬 우수한 특성을 보여주었다. 하지만 지금까지의 TLM법은 2차원의 정식화만 이루어졌고 3차원에는 적용되지 못한 것이 사실이다. 본 논문에서는 3차원의 비선형 정자계 문제에 TLM법을 적용할 수 있는 수식을 최초로 제안하며 3차원 코어(core)모델에 대해 TLM법을 적용하여 그 타당성을 검증하기로 한다. 또한 3차원 비선형 TLM법을 이용한 해석 결과가 뉴튼-�N슨법에 의한 결과와 완전히 일치하며 수렴 속도에 있어서도 훨씬 향상된 결과를 나타냄을 보이도록 하겠다.

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Contact property analysis of ITO - n type emitter, ITO - Ag by TLM (TLM 분석법을 통한 ITO - n emitter간, ITO - Ag 간 접촉 저항 특성 분석)

  • Ryu, Kyungyul;Beak, Kyunghyun;YiKim, Junsin
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.11a
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    • pp.50.2-50.2
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    • 2010
  • Indium Tin Oxide (ITO)는 투과도가 높고, 전기 전도도가 뛰어나 TFT, 태양전지 등 여러 가지 산업에서 전극의 재료로 널리 사용되고 있다. 전극의 재료로써 가장 중요하게 고려되어야 할 사항 중의 하나는 전극과 접촉하는 물질과의 접촉 저항이다. 특히, 태양전지에서 높은 접촉 저항은 셀을 직렬저항 요소를 증가시켜 태양전지의 효율 저하를 가져 온다. 본 연구에서는 ITO를 실리콘 태양전지에 적용하기 위하여, ITO - n-type emitter간, ITO - Ag 간의 접촉 특성을 Transfer Length Method(TLM)을 통하여 분석하였다. p-type 실리콘의 전면을 도핑하여 pn접합을 형성한 후, 그 위에 ITO 패턴을 형성하여 ITO-emitter 간의 접촉 특성을 측정하였고, 두껍게 증착한 SiNx 박막 전면에 ITO를 증착한 후, Ag 패턴을 형성하여 ITO-Ag간의 접촉 특성을 측정 하였다. 측정 결과, ITO와 emitter 간의 접촉 비저항은 $0.9{\Omega}-cm^2 $을 나타내었고, ITO와 Ag와의 접촉 비저항은 $0.096{\Omega}-cm^2 $을 나타내었다.

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Analysis of the Three-Phase Transformer Considering the Non-Linear and Anisotropic Properties using the Transmission Line Modeling Method and FEM (이방성과 비선형성을 고려한 삼상 변압기의 TLM-FEM해석)

  • Im, Chang-Hwan;Kim, Hong-Gyu;Lee, Chang-Hwan;Jeong, Hyeon-Gyo
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.48 no.10
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    • pp.523-529
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    • 1999
  • In the case of the large power transformer, the grain-oriented material is usually used. So, to obtain more accurate results, anisotropy and non-linearity of the material must be considered. The Newton-Raphson(NR) method is generally used for analyzing these non-linear properties, but it consumes so much time, especially when the number of nodes is large or the shape of the model is complex. The transmission line modeling (TLM) method is successfully adopted to the analysis of non-linear properties with FEM, but it has not been adopted to the analysis of the anisotropic material. In this paper, the formulation of the TLM method considering anisotropy is developed and the adoption to the 3-phase transformer is presented.

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S-Parameter Extraction of Unilateral Finline Using the Symmetrical Condensed TLM Node (대칭압축 TLM노드를 이용한 단방향 핀라인의 S-파라메터 추출)

  • Kim, Tae-Won
    • Journal of the Korean Institute of Telematics and Electronics T
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    • v.36T no.2
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    • pp.63-69
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    • 1999
  • The frequency-dependent characteristics of the finline have previously been analyzed using several frequency domain approaches. But the time domain TLM method presented in this paper is another independent approaches for obtaining frequency domain results for finline. The structure analysed with this algorithm is unilateral finline in WR-62 waveguide enclosures and the symmetrical condensed node based on the properties of Huygen's scattering model is used. From the TLM results, the frequency-dependent scattering parameters of a unilateral finline have been calculated by Fourier transform of the time domain data. The numerical results are in good agreements with other paper, thus demonstrating the validity and usefulness of the proposed method.

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Study of contact resistance using the transmission line method (TLM) pattern for metal of electrode (Cr/Ag & Ni) (TLM pattern을 사용한 Cr/Ag 및 Ni 전극에 따른 접합 저항 연구)

  • Hwang, Min-Young;Koo, Ki-Mo;Koo, Sun-Woo;Oh, Gyu-Jin;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.349-349
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    • 2010
  • Great performance of many semiconductor devices requirs the use of low-resistance ohmic contact. Typically, transmission line method (TLM) patterns are used to measure the specific contact resistance between silicon and metal. In this works, we investigate contact resistance for metal dependent (Cr/Ag, Ni) using TLM pattern based on silicon-on-insulator (SOI) wafer. The electrode with Ni linearly increases contact resistance as the pattern distance increase from $15{\mu}m$ to $75{\mu}m$ in accumulation part, but non-linearly increase in inversion part. In additional, the electrode with Cr/Ag linearly increases contact resistance as the pattern distance increase from $15{\mu}m$ to $75{\mu}m$ in inversion part, but non-linearly increase in accumulation part.

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