• Information Display
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• v.5 no.1
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• pp.25-30
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• 2004

Poly-Si TFT(Thin Film Transistor) technology are reviewed and discussed. Poly-Si TFTs fabricated on glass using low-temperature process were studied extensively for the application to LCD (Liquid Crystal Display) as well as to OLED(Organic Light Emitting Diode) Display. Currently, one of the application targets of the poly-Si TFT is emphasized on the highly functional SOG(System on Glass). Improvement of device characteristics such as an enhancement of carrier mobility has been studied intensively by enlarging the grain size. Reduction of the voltage and shrinkage of the device size are the trend of AM FPD(Active Matrix Flat Panel Display) as well as of Si LSI, which will arise a peculiar issue of uniformity for the device performance. Some approaches such as nucleation control of the grain seed or lateral grain growth have been tried, so far.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1251-1254
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• 2006

A novel a-Si TFT integrated gate driver circuit using multi-thread driving has been developed. The circuit consists of two independent shift registers alternating between the two mode, "wake" and "sleep". The degradation of the circuit is retarded since the bias stress is removed during the sleep mode. It has been successfully integrated in 14.1-in. XGA LCD Panel, showing enhanced stability.

• Journal of the Korean Vacuum Society
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• v.2 no.4
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• pp.480-485
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• 1993

Factros considered building the magnetron sputtering system for TFT LCD (thin film transistor liquid crystal display0 metallization were thin film thichnes uniformity, temperature uniformity and the pressure gradient of sputtering gas flow in vacuum chamber, base pressure, and the stability fo the carrier moving . The system was consisted of a deposition chamber, a pre-heating chamber, a RF-precleaning chamber and a load/unload lock chamber. The system was designed to handle a substrate with dimension of 400$\times$400mm. The temperautre uniformity of a heater table developed showed $250 ^{\circ}C\pm$5% accuracyon the substrate glass. A base pressure of 1.8 $\times$10-7 torr was obtained after 24 hours pumping with a cryo pump. After an aluminum target was installed in a sputtering source and the film wa sdeposited on the glass, the uniformity, reflectivity and sheet resistance of the deposited film were measured.

• Proceedings of the KOSOMBE Conference
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• v.1997 no.05
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• pp.326-329
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• 1997

This paper describes a new ECG monitor that has a TFT LCD panel as its display unit. The monitor is thinner, smaller and lighter than most commonly used CRT-based monitors. In addition to portability, the system can be expanded to measure blood pressure and oxygen saturation through its flexible design.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.163-166
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• 2002

We studied the growth of large-grain pentacene film by organic vapour phase deposition. The optimizations of the growth of pentacene are carried out by varying the gas pressure in the reactor and substrate temperature. We found that the grain size depends strongly on the gas pressure in the reactor. The grain size of $20{\mu}m$ has been obtained at the gas pressure of 200 Torr. The film was found to be strongly (001) oriented and its grain size decreases with decreasing the gas pressure.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.1
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• pp.79-84
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• 2004

A light-guide is one of several important components of backlight unit in TFT-LCD. The manufacturing technology and optical system design of the light guide is very sensitive to quality and cost of the TFT-LCD module. In the present study a new manufacturing method which is called as direct surface forming(DSF) has been tested under various conditions. DSF is very similar to the well-known hot embossing except for partial contact between mold and substrate. The final V-groove pattern shows different shapes depend on the temperature of mold surface, contact time of mold and depth of V-groove.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1568-1569
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• 2007

TFT-LCD used in display area is not a light-emissive device itself but TFT-LCD can overcome through the employ of the backlight unit (BLU). BLU is very important device in TFT-LCD system. However, the old-fashion BLU of CCFL type is crucible to the health due to the contained material, mercury (Hg). Moreover, strong temperature dependency of lamp employed with Hg becomes the other disadvantage in practical usage. To solve these problems, Hg-Free lamp with strong thermal resistance property is required to displace the Hg lamp. We studied optical and electrical properties of Xe-Ne-He mixed gas that is dependent on change of mixed ratio and pressure. In our results, the designed lamp without the phosphorescent material has the lowest firing voltage at xe 50%(Ne:He=9:1).

• Applied Microscopy
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• v.39 no.4
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• pp.349-354
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• 2009

In this paper we have constructed three dimensional images and examined structural failure on thin film transistor (TFT) liquid crystal display (LCD) by using dual-beam focused ion beam (FIB) and IMOD software. Specimen was sectioned with dual-beam focused ion beam. Series of two dimensional images were obtained by scanning electron microscopy. Three dimensional reconstruction was constructed from them by using IMOD software. The short defect between Gate layer and Data layer was found from the result of three dimensional reconstruction. That phenomena made the function of the gate lost and data signal supplied to the electrode though the Drain continuously. That signal made continuous line defect. The result of the three dimensional reconstruction, serial section, SEM imaging by using the FIB will be the foundation of the next advanced study.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.235-238
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• 2008

We report the improvement in brightness through the optimization of the organic passivation process for fabricating a TFT substrate for LCD-TV panel. In conclusion, the optimization of organic passivation was accomplished with improving over $10\;cd/m^2$ in brightness than that of a conventional organic passivation process.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.11-12
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• 2000

An 18.1" Thin Film Transistor Liquid Crystal Display (TFT LCD) monitor adopting high brightness In Plane Switching (IPS) technology was realized. While conventional IPS structure used a Chromium (Cr) and Molybdenum (Mo) for a drain electrode, Indium Tin Oxide (ITO) was proposed and verified in this paper. Black sticky micropeal spacers were introduced for the reduction of light scattering phenomena, which was observed at dark room with the conventional micropeal spacers. With the proposed method, more than 10 % aperture ratio was increased and the excellent image quality was obtained.