• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.511-512
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• 2005

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1189-1192
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• 2009

Short channel a-Si:H TFT devices with Cu electrodes have been investigated. Short channel TFTs are defined by new plasma etch process. When the channel length becomes shorter, the TFT characteristics (threshold voltage, off current, sub threshold voltage, etc.,) are degraded. These degraded characteristics can be improved through the hydrogen plasma treatment and new gate insulator structure. Using these processes, 15.0 inch XGA LCD panel was fabricated successfully where the channel length of the TFT devices was about 2.5 micrometers.

• Journal of the Korean Institute of Intelligent Systems
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• v.20 no.3
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• pp.400-405
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• 2010

This paper deals with implementation of intelligent head up display for vehicle safety system. The Implanted new intelligent transport system offer the potential for improved vehicle to driver communication. The most commonly viewed information in a vehicle is from the Head up display, where speed, tachometer, engine RPM, navigation, engine temperature, fuel gauge, turn indicators and warning lights provide the driver with an array of fundamental information. TFT LCD, LCD Back light led, plane mirror, lens and controllers parts were designed to head up display system. Finally, In this paper, we analyze intelligent head up display system for vehicle of driver safety.

• Journal of Information Display
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• v.2 no.2
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• pp.13-21
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• 2001

We propose a universal image processor for a-Si TFT LCD of UXGA class that can display the full screen on the LCD panel with low resolution of video sources such as NTSC, VGA, SVGA, XGA, and SXGA by using the proposed interpolation filter. In addition, we propose a real-time contrast controller for image improvement of multi-gray scale image. The operation of the proposed methods has been verified using Synopsys VHDL and computer simulation. Results show that the proposed methods might be suitable for a UXGA LCD controller for real-time image improvement.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.664-667
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• 2003

Super In Plane Switching (S-IPS) technology is applied for large TFT-LCD panels used in TV applications. It has a lot of advantages in comparison to the alternative, VA technology. S-IPS shows excellent viewing angle properties and fast response time between intermediate gray levels. If the performance parameters which describe the actual visual performance are considered, S-IPS is much more advantageous.$^{1)}$ However, it shows relatively low contrast ratio in diagonal direction compared to viewing angle characteristic in upper/down direction in S-IPS. In order to compensate the relatively low diagonal contrast ratio, a newly designed optical film was applied and the truly wide view angle of a S-IPS TW(True Wide)-IPS) was achieved. Our newly developed 30-inch TFT-LCD panel reveals TW-IPS that is optimized for TV application

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.4
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• pp.1803-1811
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• 2011

We have analyzed the electrical defect detection mechanism using low energy microcolumn on the TFT substrate for TFT-LCD. In this study, we have acquired the SEM images of the various pixel defects for 7-inch TFT substrate by scanning of low energy electron beam in the high vacuum chamber. Futhermore, we have interpreted the defect detection mechanism through the correlations between the SEM images and electrical behaviors of the defective pixels. As a result, we obtained consistent results as the follows. We can confirm that the SEM images using low energy electron beam are significantly affected by the space charge effect.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.32B no.11
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• pp.1374-1382
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• 1995

In TFT-LCDs, as the display size area becomes larger, and the resolution higher, we have to consider the image degradation effects due to the incorporation of the TFT-LCD parameters such as the data-line resistance, the common electrode resistance, the data-line to common parasitic capacitance, and the output characteristics of driver ICs. One of the degradation effects is crosstalk resulting from the coupling between the source bus-line and common electrode. Since a source signal which represents a large number of display data is supposed to vary frequently, the common signal level is affected through the coupling effect, resulting in the degradation of nearby pixel drive signals. Therefore, we proposed a method to compensate for this source-common electrode coupling effect, we also designed and experimented the feasibility of our crosstalk compensation circuit in the actual TFT-LCD. We saw that the newly designed compensation circuit greatly reduced the crosstalk in display pattern image.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.488-491
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• 2008

The variations of the TFT characteristics in AMOLEDs result in the decrease of the uniformity of the displays. Measurement of the long-range uniformity (LRU) is straightforward. However, there is no method for measuring the short-range uniformity (SRU) yet. Quantifying the SRU is important in evaluating various TFT backplanes and compensation circuits. We propose new methods for measuring SRU.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.13-14
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• 2000

21.6" a-Si:H TFT array for direct conversion X-ray detector with 2480 by 3072 pixel is successfully developed. To obtain good X-ray image quality, novel structure, storage on BCB structure, is proposed. The structure reduces the parasitic capacitance of data line, one of the main sources of signal noise. Also, the structure shows higher failure resistance against defects than that of the old design.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.15-20
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• 2005

We have achieved 180-degree angle of view performance using Super-PVA (S-PVA) technology first time in TFT-LCD industry. 82" full high definition ($1920{\times}1080$) TFT- LCD panel, the world's largest TFT-LCD, have been developed. In addition to the size breakthrough, this product achieves 600nits brightness, over 1200:1 contrast ratio, viewing angle free, 92% color gamut, and 8ms response time. Several key enabling technologies were developed to achieve these specifications, including two transistor direct driven independently controlled S-PVA subpixels, non even area ratio sub-pixels for optimal offaxis gamma, gate overlap driving for larger driving margin, new CCFL technology for higher color gamut, and advanced fabrication techniques including the use of Samsung's new $7^{th}$ generation line.