• Applied Microscopy
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• v.29 no.4
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• pp.493-498
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• 1999

With increasing demand for fast and reliable, yet economical data storage devices, the role of optical disk technology is becoming more important. In recent years, advanced laser technology combined with new materials has given the competitive edge over the traditional magnetic memory devices both in memory capacity and reliability of data retrieval. Continuing effort is being put into developing smaller and more complex structures for optical disks to increase their memory density. Characterization of such multilayered structure requires not only high spatial resolution for observation but also laborious specimen preparation. In this paper, the method of preparing optical disk specimens for TEM characterization is described in detail. The microstructural features in optical disks observed by TEM are also discussed.

• Journal of the Korean Society for Aviation and Aeronautics
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• v.22 no.3
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• pp.15-23
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• 2014

There have been CFIT(Controlled Flight Into Terrain) accidents that can be prevented if the crew executed go-around. This study is to analyse the common factors of three typical CFIT accidents of Korea in TEM(threat and error management) frame, and the examples of go-around gate and the countermeasures of eight airlines through the survey facilitating go-around to prevent CFIT. The common factors found in three typical CFIT accidents occurred in Korea or by Korean carriers turned out to be in mountainous terrain, in bad weather while in non-precision approach or circling approach by captain as PF(Pilot Flying) when crew make monitoring errors and communication errors. It also turned out that the crew in all three typical tragic CFIT accidents did not execute go-around in unstabilized approaches. The captains did not respond immediately when first officers advised them to go-around until it is too late. Seven out of eight Airlines answered that they use stabilized approach height as 1,000 feet to be stabilized earlier to have more safety margin by enhancing go-around gate regardless of the weather to prevent CFIT in the survey.

• Journal of the Korean Society for Aviation and Aeronautics
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• v.17 no.2
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• pp.62-67
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• 2009

LOSA is a flight safety program that analyses human errors in normal operations. Trained pilot observers monitor the normal flights at the observer seat. LOSA is a proactive non jeopardy data collection tool using threat and error management(TEM) as a framework. With the analysis of crew behaviors through LOSA with The LOSA collaborative(TLC), the airlines can identify the behaviors of the crew during normal operations. The major objective of LOSA is to measure how the crew manage threats, errors and undesired aircraft deviations in the cockpit on day to day operations. The airlines are able to set up effective TEM training with practical six generation Crew recourse management(CRM) with data of error from LOSA instead of theoretical CRM courses. The Airlines can use TEM as an integral part of a Safety Management System(SMS) and uses monitoring and cross-checking skills in the flight operations to manage threats and errors effectively when we know the errors we make in the cockpit on daily operation. The result of LOSA indicates that the error detection rate should be enhanced since around the half of the errors went undetected. The areas which should be focused for enhancing the error detection are monitor, cross-check, the management of workload, automation and taxiway/ runway to manage errors effectively.

• 한국전자현미경학회:학술대회논문집
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• 2000.11a
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• pp.52-55
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• 2000

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.38.1-38.1
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• 2010

The trend to thinner crystalline silicon solar wafers in production of solar cells investigates re-evolution of back surface field (BSF) formation. We have studied mechanisms of back contact formation in Al evaporation and screen printed Al paste for Si solar cells by TEM analysis. We observed that Si diffuse into Al during heat up. The Si diffusion process made vacancies in Si wafer. The Al began to seep into the Si wafer (Al spike). During heat down, the Al spike were shrink which causes the doped region (BSF).

• Journal of the Korean Magnetic Resonance Society
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• v.6 no.1
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• pp.38-44
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• 2002

60% Pt on Vulcan XC-72 with similar Pt sizes to fuel cell grade Pt black was investigated by $\^$13/C nuclear magnetic resonance spectroscopy (NMR), cyclic voltammery (CV), transmission electron microscopy (TEM). Experiments were carried out on electrochemically cleaned samples as well as as-received. The TEM and CV results showed that the average particle sizes were changed by cleaning. However, the chemical shift （$\delta$$\_$G/） of $\^$13/C of $\^$13/CO absorbed on Pt surfaces did not show any appreciable variation with particle size change as did in Pt black. These results indicate that a combination of different analytic techniques is essential to understand the properties of the metal particle catalysts and that the presence of carbon black support strongly influences the NMR data, probably through metal-support interaction.

• Bulletin of the Korean Chemical Society
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• v.34 no.3
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• pp.773-776
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• 2013

We have prepared 1-D BiSI and 2-D BiOI nanostructures, and characterized them by scanning electron microscopy, transmission electron microscopy (TEM), X-ray diffraction crystallography, thermogravimetric analysis/differential scanning calorimetry, and UV-visible absorption. Here, we first report clear HR-TEM image of BiSI. In addition, we first found that the growth direction of BiSI is [12-1] plane, with the neighboring distance of 0.30 nm. The crystal structures of BiSI and BiOI are found to be orthorhombic (Pnam) and tetragonal (P4/nmm), respectively. The absorption band gaps of BiSI and BiOI are measured to be 1.55 and 1.92 eV, respectively. Our study could further highlight the applications of V-VI-VII compounds.

• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.143-147
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• 2004

Surface defects and bulk defects on SOI wafers are studied. Two new metrologies have been proposed to characterize surface and bulk defects in epitaxial layer transfer (ELTRAN) wafers. They included the following: i) laser scattering particle counter and coordinated atomic force microscopy (AFM) and Cu-decoration for defect isolation and ii) cross-sectional transmission electron microscope (TEM) foil preparation using focused ion beam (FIB) and TEM investigation for defect morphology observation. The size of defect is 7.29 urn by AFM analysis, the density of defect is 0.36 /cm$^2$ at as-direct surface oxide defect (DSOD), 2.52 /cm$^2$ at ox-DSOD. A hole was formed locally without either the silicon or the buried oxide layer (Square Defect) in surface defect. Most of surface defects in ELTRAN wafers originate from particle on the porous silicon.

• Applied Microscopy
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• v.24 no.4
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• pp.132-144
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• 1994

The application of TEM in investigating the evolution of microstructure during solid phase crystallization of the amorphous Si, $Si_{1-x}Ge_x,\;and\;Si_{1-x}Ge_x/Si$ films deposited on $SiO_2$ substrate, in identifying the failure mechanism of the TiN barrier layer in the Cu-metallization scheme, and in comparing the microstructure of the as-deposited Cu-Cr and Cu-Ti alloy films are discussed. First, it is identified that the evolution of microstructure in Si and $Si_{1-x}Ge_x$ alloy films strongly depends on the concentration of Ge in the film. Second, the failure mechanism of the TiN diffusion barrier in the Cu-metallization is the migration of the Cu into the Si substrate, which results in the formation of a dislocation along the Si {111} plane and precipitates (presumably $Cu_{3}Si$) around the dislocation. Finally, the microstructure of the as-deposited Cu-Cr and Cu-Ti alloy films is also quite different in these two cases. From these several cases, we demonstrate that the information which we obtained using TEM is critical in understanding the behavior of materials.

• Journal of the Korean Ceramic Society
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• v.44 no.4 s.299
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• pp.202-207
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• 2007

High-Quality 1-Dimensional InN single crystalline have been grown by Halide Vapor-Phase Epitaxy on the Au catalyst coated Si substrate using the vapor-liquid-solid growth mechanism. We have been grown 1-dimension InN nanowires having controlled the growth conditions for substrate temperature and gases flow rate. The grown InN nanowire of characteristics for morphologies, crystal structure, and element analysis were carried out by SEM, HR-TEM, and EDS respectively. And the defects of InN crystalline were analyzed by indexing of selective area diffraction pattern with attached HR-TEM. We have successfully obtained the defect-free 1-dimensional InN single crystalline nanowire at the atmosphere pressure.