• 제목/요약/키워드: TEM analysis

검색결과 952건 처리시간 0.027초

Effect of surface treatment of graphene nanoplatelets for improvement of thermal and electrical properties of epoxy composites

  • Kim, Minjae;Kim, Yeongseon;Baeck, Sung Hyeon;Shim, Sang Eun
    • Carbon letters
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    • 제16권1호
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    • pp.34-40
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    • 2015
  • In this study, in order to improve the thermal and electrical properties of epoxy/graphene nanoplatelets (GNPs), surface modifications of GNPs are conducted using silane coupling agents. Three silane coupling agents, i.e. 2-(3,4-epoxycyclohexyl)-ethyltrimethoxysilane (ETMOS), 3-glycidoxypropyltriethoxysilane (GPTS), and 3-glycidoxypropyltrimethoxysilane (GPTMS), were used. Among theses, GPTMS exhibits the best modification performance for fabricating GNP-incorporated epoxy composites. The effect of the silanization is evaluated using transmission electron microscopy (TEM), scanning electron microscopy, thermogravimetric analysis, and energy dispersive X-ray spectroscopy. The electrical and thermal conductivities are characterized. The epoxy/silanized GNPs exhibits higher thermal and electrical properties than the epoxy/raw GNPs due to the improved dispersion state of the GNPs in the epoxy matrix. The TEM microphotographs and Turbiscan data demonstrate that the silane molecules grafted onto the GNP surface improve the GNP dispersion in the epoxy.

$Si_2H_6$를 이용한LPCVD 실리콘 박막의 결정 성장 및 구조적 성질에 관한 연구 (A Study on the Grain Growth and Structure Properties of LPCVD Films Using $Si_2H_6$ GAS)

  • 홍찬희;박창엽
    • 대한전기학회논문지
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    • 제40권7호
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    • pp.670-674
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    • 1991
  • This paper presents the material properties of LPCVD silicon films formed using Si2H6 gas at various deposition temperatures. To study the structural properties depending on the deposition temperature, XRD, EBD and TEM analyses were used. The maximum grain size in this experiment was obtained at the deposition temperature of 485ø C. It is discussed that LPCVD films formed below the deposition temperature of 485ø C are promising for low temperature TFT applications. The enhancement of the film characteristics results from the reduction of grain boundary density. We also observed that the film properties of Si2H6 at 600ø C was quite different from those of Si H4 at 600ø C. It has shown that the grain structure from a TEM analysis was elliptical and not dependent on the deposition temperature.

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초저온 전자현미경법을 통한 고분해능 생물분자 구조분석 (High resolution structural analysis of biomolecules using cryo-electron microscopy)

  • 현재경
    • 진공이야기
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    • 제4권4호
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    • pp.18-22
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    • 2017
  • Transmission electron microscopy (TEM) is a versatile and powerful technique that enables direct visualization of biological samples of sizes ranging from whole cell to near-atomic resolution details of a protein molecule. Thanks to numerous technical breakthroughs and monumental discoveries, 3D electron microscopy (3DEM) has become an indispensable tool in the field of structural biology. In particular, development of cryo-electron microscopy(cryo-EM) and computational image processing played pivotal role for the determination of 3D structures of complex biological systems at sub-molecular resolution. Here, basis of TEM and 3DEM will be introduced, especially focusing on technical advancements and practical applications. Also, future prospective of constantly evolving 3DEM field will be discussed, with an anticipation of great biological discoveries that were once considered impossible.

기상반응에 의한 $Si_3N_4$ 미세분말의 합성 (Synthesis of Ultrafine Silicon Nitride Powders by the Vapor Phase Reaction)

  • 유용호;어경훈;소명기
    • 한국세라믹학회지
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    • 제37권1호
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    • pp.44-49
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    • 2000
  • Silicon nitride powders, were synthesized by the vapor phase reaction using SiH4-NH3 gaseous mixture. The reaction temperature, ratio of NH3 to SiH4 gas and the overall gas quantity were varied. The synthesized powders were characterized using X-ray, TEM, FT-IR and EA. The synthesized silicon nitride powders were in amorphous state, and the average particle size was about 100nm. TEM analysis revealed that the particle size decreased with increasing reaction temperature and gas flow quantity. As-received amorphous powders were annealed in nitrogen atmosphere at 140$0^{\circ}C$ for 2h, then the powders were completely crystallized at 0.2 ratio of NH3 to SiH4.

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$300^{\circ}C$$500^{\circ}C$사이에서 산회된 304, 316 스테인리스강의 표면특성 (A Surface Study of 304 and 316 Stainless Steel Oxidized between $300^{\circ}C$ and $500^{\circ}C$)

  • 김경록;이경구;강창석;최답천;이도재
    • 한국표면공학회지
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    • 제32권1호
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    • pp.43-48
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    • 1999
  • Oxidation behavior of 304 and 316 stainless steels was studied. After solution heat treatment, specimens were polished up to 1$mu \textrm{m}$ using $Al_2O_3$ powder and then subjected to oxidation between $300^{\circ}C$ and 50$0^{\circ}C$ in dry air. TEM and EDS were used for analyzing the components and structure of oxide film. TEM analysis of oxide film revealed that thin amorphous Fe oxide ($Fe_2O_3$) was formed on the top of surface while polycrystalline (Cr, $Fe_2O_3$ was formed below the amorphous Fe oxide layer. The specimens oxidized at $500^{\circ}C$ showed that 316 stainless steel had higher oxidation resistance than 304 stainless steel. These results suggest that Mo component of 316 stainless steel suppresses the formation of Cr carbide which may result in a local Cr depleted area.

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주조 오스테나이트 스테인리스강 상경계 균열부 산화물 분석 (Analysis of Oxide Layers in Phase Boundary Crack of Cast Austenitic Stainless Steel)

  • 최민재;김성우
    • 한국압력기기공학회 논문집
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    • 제19권2호
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    • pp.171-178
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    • 2023
  • For the phase boundary crack found in the gasket made of cast austenitic stainless steel in the nuclear power plant, the oxide layers were analyzed through SEM and TEM. The results showed that cracks initiated and propagated along the austenite/δ-ferrite phase boundary, the propagation path was changed to penetrate the inside of the phase. The oxide layer located at the periphery of the crack along the phase boundary was identified as a complex multi-layered spinel structure, and Cr-rich carbides were also detected in the oxide. The cracks that propagated inside the austenite matrix were attributed to the presence of high external stresses and impurities.

Transmission Electron Microscope Sampling Method for Three-Dimensional Structure Analysis of Two-Dimensional Soft Materials

  • Lee, Sang-Gil;Lee, Ji-Hyun;Yoo, Seung Jo;Datta, Suvo Jit;Hwang, In-Chul;Yoon, Kyung-Byung;Kim, Jin-Gyu
    • Applied Microscopy
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    • 제45권4호
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    • pp.203-207
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    • 2015
  • Sample preparation is very important for crystal structure analysis of novel nanostructured materials in electron microscopy. Generally, a grid dispersion method has been used as transmission electron microscope (TEM) sampling method of nano-powder samples. However, it is difficult to obtain the cross-sectional information for the tabular-structured materials. In order to solve this problem, we have attempted a new sample preparation method using focused ion beam. Base on this approach, it was possible to successfully obtain the electron diffraction patterns and high-resolution TEM images of the cross-section of tabular structure. Finally, we were able to obtain three-dimensional crystallographic information of novel zeolite nano-crystal of the tabular morphology by applying the new sample preparation technique.

Quantitative Analysis of Ultrathin SiO2 Interfacial Layer by AES Depth Profilitng

  • Soh, Ju-Won;Kim, Jong-Seok;Lee, Won-Jong
    • The Korean Journal of Ceramics
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    • 제1권1호
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    • pp.7-12
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    • 1995
  • When a $Ta_O_5$ dielectric film is deposited on a bare silicon, the growth of $SiO_2$ at the $Ta_O_5$/Si interface cannot be avoided. Even though the $SiO_2$ layer is ultrathin (a few nm), it has great effects on the electrical properties of the capacitor. The concentration depth profiles of the ultrathin interfacial $SiO_2$ and $SiO_2/Si_3N_4$ layers were obtained using an Auger electron spectroscopy (AES) equipped with a cylindrical mirror analyzer (CMA). These AES depth profiles were quantitatively analyzed by comparing with the theoretical depth profiles which were obtained by considering the inelastic mean free path of Auger electrons and the angular acceptance function of CMA. The direct measurement of the interfacial layer thicknesses by using a high resolution cross-sectional TEM confirmed the accuracy of the AES depth analysis. The $SiO_2/Si_3N_4$ double layers, which were not distinguishable from each other under the TEM observation, could be effectively analyzed by the AES depth profiling technique.

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A Correlative Approach for Identifying Complex Phases by Electron Backscatter Diffraction and Transmission Electron Microscopy

  • Na, Seon-Hyeong;Seol, Jae-Bok;Jafari, Majid;Park, Chan-Gyung
    • Applied Microscopy
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    • 제47권1호
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    • pp.43-49
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    • 2017
  • A new method was introduced to distinguish the ferrite, bainite and martensite in transformation induced plasticity (TRIP) steel by using electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM). EBSD is a very powerful microstructure analysis technique at the length scales ranging from tens of nanometers to millimeters. However, iron BCC phases such as ferrite, bainite and martensite cannot be easily distinguished by EBSD due to their similar surface morphology and crystallographic structure. Among the various EBSD-based methodology, image quality (IQ) values, which present the perfection of a crystal lattice, was used to distinguish the iron BCC phases. IQ values are very useful tools to discern the iron BCC phases because of their different density of crystal defect and lattice distortion. However, there are still remaining problems that make the separation of bainite and martensite difficult. For instance, these phases have very similar IQ values in many cases, especially in deformed region; therefore, even though the IQ value was used, it has been difficult to distinguish the bainite and martensite. For more precise separation of bainite and martensite, IQ threshold values were determined by a correlative TEM analysis. By determining the threshold values, iron BCC phases were successfully separated.