A Study on the Grain Growth and Structure Properties of LPCVD Films Using $Si_2H_6$ GAS

$Si_2H_6$를 이용한LPCVD 실리콘 박막의 결정 성장 및 구조적 성질에 관한 연구

This paper presents the material properties of LPCVD silicon films formed using Si2H6 gas at various deposition temperatures. To study the structural properties depending on the deposition temperature, XRD, EBD and TEM analyses were used. The maximum grain size in this experiment was obtained at the deposition temperature of 485ø C. It is discussed that LPCVD films formed below the deposition temperature of 485ø C are promising for low temperature TFT applications. The enhancement of the film characteristics results from the reduction of grain boundary density. We also observed that the film properties of Si2H6 at 600ø C was quite different from those of Si H4 at 600ø C. It has shown that the grain structure from a TEM analysis was elliptical and not dependent on the deposition temperature.