• Title/Summary/Keyword: TEM Journal

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A study on machining method about molybdenum alloy micro fixing part for TEM precision specimen. (TEM 정밀 시편 제작용 몰리브덴 합금 미세 고정 부품의 제작을 위한 절삭 가공 방법에 관한 연구)

  • Kim, Ki-Beom;Lee, Chang-Woo;Lee, Hae-Jin;Ham, Min-Ji;Kim, Gun-Hee
    • Design & Manufacturing
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    • v.11 no.3
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    • pp.19-24
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    • 2017
  • In these days, increase requirement of TEM (Transmission Electro Microscope) in not only scientific field but also industrial field. Because TEM can measure inner-structure of specimen a variety of materials like metal, bio. etc. When use TEM, specimen should be thin about 50nm. So making for thin specimen, use Ion milling device that include specimen holder. The holder generally made of Aluminium Aluminium holder is worn away easily. For this reason, using time of ion milling with aluminum holder is too short. To solve the problem, we replace aluminium holer to molybdenum alloy holder. In this paper, we design molybdenum alloy holer for CAM and modify CAD modeling for effective machining process. So we array a specimen 3 by 4 and setup orientation for one-shot machining process. Next we make a CAM program for machining. we making a decision two machining strategy that chose condition of tool-path method, step-down, step-over. etc. And then conduct machining using CNC milling machining center. To make clear difference between case.1 and case.2, we fixed machining conditions like feed-rate, main spindle rpm, etc. After machining, we confirm the condition of workpiece and analysis the problems case by case. Finally, case.2 work piece that superior than case.1 cutting with WEDM because that method can not ant mechanical effect on workpiece.

TEM을 이용한 Ion Implanted Sample의 관찰 및 분석

  • Baek, Mun-Cheol;Gwon, O-Jun
    • ETRI Journal
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    • v.9 no.3
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    • pp.106-114
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    • 1987
  • Ion implantation 공정은 VLSI processing의 필수적인 기술로서 그 중요성이 더해가고 있다. 그러나 고 energy의 ion주입에 따른 defect의 발생 및 그 제어기술이 문제가 되고 있으며, 이러한 기술의 개발을 위해서는 그 defect의 정밀관찰 및 분석이 필요하다. 여기에서는 이와 같은 분석기술에 대하여 TEM을 이용한 분석사례를 들어 정리하였다. 그리고 RBS, SIMS 등 분석 기술과의 combination에 대하여 고찰하였다.

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Study on the Genetic Variations of the Economic Traits by Backcrossing in Commercial Chickens (실용계군에 있어서 누진퇴교배에 의한 주요경제형질의 유전적 변이에 관한 연구)

  • 이종극;오봉국
    • Korean Journal of Poultry Science
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    • v.16 no.2
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    • pp.61-71
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    • 1989
  • The purposes of this study were to investigate the genetic variations by backcrossing in commercial chickens. Backcrossing was carried out successively back to parent stock (P.S). Heritabilities and genetic correlation coefficients were estimated to verify the genetic variations. The data obtained from a breeding programme with commercial chickens (I strain) were collected from 1955 to 1987 at Poultry Breeding Farm, Seoul National University. Data came from a total of 1230 female offspring. The results obtained are summarized as follows: 1. The general performance ($Mean\pmStandard deviation$) of each trait was $663.94\pm87.11$g for 8 weeks body weight, $1579.1\pm155.43$g for 20 weeks body weight, $2124.1\pm215.3$g for 40 weeks body weight, $2269.1\pm242.94$g for 60 weeks body weight, $168.43\pm12.94$ day for a9e at sexual maturity (SM), $214.52\pm29.82$ eggs , for total egg number to 60 weeks of age (TEN), $61.45\pm3.48$ g for average weight (AEW), $13180.7\pm1823.22$ g for total egg mass to 60 weeks of age(TEM). All traits, except 10 weeks body weight and AEW, were significant for the degrees of backcross (p<0.01). 2. The pooled estimates of heritabilities derived from the sire, dam and combined variance components were 0.47~0.52 for age at sexual maturity (SM), 0.07~0.37 for total egg number (TEN), 0.40~0.54 for average egg weight (AEW), 0.18~0.27 for total egg mass (TEM). High heritability estimates were found for SM and AEW. TEN and TEM were estimated to be a lowly heritable traits. Heritability estimates from dam components were higher than those from sire components. These differences might be due to non-additive genetic effect and maternal effect. 3. The estimates of heritabilities and standard errors derived from combined variance components for different degrees of backcross were $0.47\pm0.11$ (BCO), $0.42\pm0.16$ (BC1), $0.51\pm0.29$ (BC2) for TEN, $0.59\pm0.20$ (BCO), $0.43\pm0.17$ (BC1), $0.35\pm0.18$ (BC2) for AEW, $0.28\pm0.12$(BC0), $0.20\pm0.11$(BC1), $0.18\pm0.14$ (BC2) for TEM. Heritability estimates for AEW and TEM were decreased by backcrossing while those for SM and TEN remained constant. Since backcrossing contributes to increased homozygosity, the genetic variation of the traits (AEW and TEM) decreased . 4. The pooled estimates of genetic correlation coefficients were -0.55 between SM and TEN, 0.20 between SM and AEW, -0.29 between TEN and AEW, 0.82 between TEM and TEN, 0.31 between TEM and AEW, -0.42 between TEM and SM. The genetic correlation between TEM and TEN was higher than that between TEM and AEW, and it was suggested that egg mass was strongly affected by egg number. Also, age at sexual maturity(SM) contributes to egg mass(TEM). 5. When backcrossing was carried out successively, the genetic correlation between TEM and TEN increased (BC0:0.79, BC1:0.82, BC2:0.91) but those between TEM and SM decreased (BC0:-0.54, BC1:-0.36, BC2:-0.09) with successive backcrosses.

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Application of Geophysical Methods to Detection of a Preferred Groundwater Flow Channel at a Pyrite Tailings Dam (황철석 광산 광미댐에서의 지하수흐름 경로탐지를 위한 물리탐사 적용)

  • Hwang, Hak Soo
    • Economic and Environmental Geology
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    • v.30 no.2
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    • pp.137-142
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    • 1997
  • At the tailings dam of the disused Brukunga pyrite mine in South Australia, reaction of groundwater with the tailings causes the formation and discharge of sulphuric acid. There is a need to improve remediation efforts by decreasing groundwater flow through the tailings dam. Geophysical methods have been investigated to determine whether they can be used to characterise variations in depth to watertable and map preferred groundwater flow paths. Three methods were used: transient electromagnetic (TEM) soundings, direct current (DC) soundings and profiling, and self potential (SP) profiling. The profiling methods were used to map the areal extent of a given response, while soundings was used to determine the variation in response with depth. The results of the geophysical surveys show that the voltages measured with SP profiling are small and it is hard to determine any preferred channels of groundwater flow from SP data alone. Results obtained from TEM and DC soundings, show that the DC method is useful for determining layer boundaries at shallow depths (less than about 10 m), while the TEM method can resolve deeper structures. Joint use of TEM and DC data gives a more complete and accurate geoelectric section. The TEM and DC measurements have enabled accurate determination of depth to groundwater. For soundings centred at piezometers, this depth is consistent with the measured watertable level in the corresponding piezometer. A map of the watertable level produced from all the TEM and DC soundings at the site shows that the shallowest level is at a depth of about 1 m, and occurs at the southeast of the site, while the deepest watertable level (about 17 m) occurs at the northwest part of the site. The results indicate that a possible source of groundwater occurs at the southeast area of the dam, and the aquifer thickness varies between 6 and 13 m. A map of the variation of resistivity of the aquifer has also been produced from the TEM and DC data. This map shows that the least resistive (i.e., most conductive) section of the aquifer occurs in the northeast of the site, while the most resistive part of the aquifer occurs in the southeast. These results are interpreted to indicate a source of fresh (resistive) groundwater in the southeast of the site, with a possible further source of conductive groundwater in the northeast.

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Gravimetric Terrain Correction using Triangular Element Method (삼각요소법을 이용한 중력자료의 지형보정)

  • Rim, Hyoung-Rea;Lee, Heui-Soon;Park, Young-Sue;Lim, Mu-Taek;Jung, Hyun-Key
    • Geophysics and Geophysical Exploration
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    • v.13 no.2
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    • pp.169-174
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    • 2010
  • We developed a precise terrain correction program using triangular element method (TEM) for microgravity data processing. TEM calculates gravity attraction of arbitrary polyhedra whose surface is patched by triangles. We showed that TEM can calculate more precise terrain effect than conventional rectangular prism method. We tested the accuracy of TEM on the cone model which has analytic solution. Also, we tested the accuracy of TEM on the slope model, this results showed that there are big differences calculated by TEM and rectangular prsim method (RPM) on slope model. The developed terrain correction program was applied on the gravity data on the southern area near sea shore of Korean peninsula, calculated terrain effect very precisely.

TEM analysis of IBAD/RABiTS substrates prepared by Tripod polishing (Tripod polishing을 이용한 IBAD/RABiTS 기판의 TEM 분석)

  • Choi, Soon-Mee;Chung, Jun-Ki;Yoo, Sang-Im;Park, Chan;Oh, Sang-Soo;Kim, Cheol-Jin
    • Progress in Superconductivity and Cryogenics
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    • v.8 no.1
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    • pp.9-14
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    • 2006
  • Sample preparation plays a critical role in microstructure analysis using TEM. Although TEM specimen has been usually prepared by jet-polishing or Ar-ion beam milling technique. these methods could not be applied to YBCO CC which is composed of IBAD or RABiTS substrates, several buffet layers, and YBCO superconducting layer because of big difference in mechanical strengths between the metallic phase and oxide phases. To obtain useful cross-sectional information such as interface between the phases or second phases in YBCO CC, it is prerequisite to secure the large area of thin section in the cross-sectional direction. The superconducting layer or the buffer layers are relatively weak and fragile compared to the metallic substrate such as Ni-5wt%W RABiTS of Hastelloy-based IBAD, and preferential removal of weak ceramic phases during polishing steps makes specimen preparation almost impossible. Tripod polisher and small jig were home-made and employed to sample preparation. The polishing angle was maintained <$1^{\circ}$ throughout the polishing steps using 2 micrometers attached to the tripod plate. TEM specimens with large and thin area could be secured and used for RABiTS/IBAD substrate analyses. In some cases, additional Ar-beam ion milling with low beam current and impinging angle was used for less than 30 sec. to remove debris or polishing media attacked to the specimens.

Phyllosilicate Intergrowth/Interlayer in the Southwestern Part of the Okchon Metamorphic Belt: EPMA, BSE and TEM Study (옥천변성대 남서부 지역에서의 Phyllosilicate Intergrowth/Interlayer: EPMA, BSE, TEM 연구)

  • 이정후;이영부;오창환;김선태
    • Journal of the Mineralogical Society of Korea
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    • v.8 no.1
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    • pp.1-12
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    • 1995
  • 옥천 변성대 남서부 지역에서 산출되는 변성 니질암에서는 muscovite, biotite 및 chlorite를 주로하는 phyllosilicate가 서로 intergrowth 또는 interlayer를 이루는 것이 편광현미경 관찰, EPMA 분석, Back Scattered Electron (BSE) image 관찰 및 Transmission Electron Micro-scope(TEM) 관찰을 통하여 확인되었다. 이들 광물들은 편광현미경 관찰에서 흔히 각각의 입자를 식별할 수 없을 정도의 미세 규모로 서로 intergrow 되어 있으며BSE image에서는 0.1$\mu\textrm{m}$ 이하의 아주 작은 크기에서부터 10.0$\mu\textrm{m}$ 정도 크기까지 다양한 규모의 intergrow를 형성하고 있음이 관찰되었다. TEM scale에서는 개별 layer 크기(약 10$\AA$)에서부터 수십 개 layer 크기의 interlayering을 보여준다. 이와 같은 intergrowth 또는 interlayering의 결과로 EPMA 분석에서 종종 보기에는 규진(homogeneous)한 입자라 하더라도 두 개 이상의 광물 성분이 섞여 있는 분석값을 나타내며 이러한 nonstoichiometry는 BSE image에서 interlayer(또는 intergrow) 된 것으로 관찰되는 부분에서 더욱 두드러진다.Chlorite zone에서는 chlorite와 muscovite의 interlayering (C/M)이 주로 발견되며 biotite zone과 garnet zone에서는 chlorite와 biotite의 interlayer (C/B)가 주로 관찰된다. 이는 chlorite zone에서는 속성작용에서 보편적으로 나타나는 C/M으로부터 chlorite가 분리되는 광물반응이 일어나는데 반해서 biotite zone과 garnet zone에서는 chlorite로부터 C/B를 거쳐 biotite를 생성하는 광물반응이 일어나는 것을 의미한다. 이와 같은 현상은 변성작용에서 phollosilicate의 광물반응의 엄밀한 의미에서는 평형(equilibrium) 상태에서 균질한 광물을 생성하기보다는 비평형(disequilibrium) 반응으로 일어난다는 것을 의미한다.

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Microstructural Changes during Activation Process of Isotopic Carbon Fibers using CO2 Gas(II)-TEM Study (이산화탄소를 이용한 등방성 탄소섬유의 활성화과정 중 발생하는 구조변화(II)-TEM을 이용한 분석)

  • Roh, J.S.
    • Korean Journal of Materials Research
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    • v.13 no.11
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    • pp.749-755
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    • 2003
  • A development of micropores of $CO_2$activated isotropic carbon fibers from TEM was observed. It was observed that the micropores of activated carbon fibers(ACFs) were consisted of slit-shaped pores(SP) and cylinder-shaped pores(CP). The SPs were formed between two parallel-carbon layers, and the CPs were formed at a place which is connected polygonally by more than two carbon layers. It was shown that the CPs of the ACFs were developed at high degree of burn-offs and at high activation temperature. The pore size distribution of the best ACF, which was observed at a highest value of specific surface area(3,495 $\m^2$/g), showed a continuous distribution in the range of about $4∼l5\AA$, and the median pore size was 6.7$\AA$. The super-high specific surface area of ACFs was found to be due to that the SPs were connected with a maximum size of 7∼8$\AA$ continuously, It is possible that the SPs should be formed in the ACFs in order to show super-high SSA.

A TEM Study on Growth Characteristics of GaN on Si(111) Substrate using MOCVD (Si(111) 기판 위에 MOCVD 법으로 성장시킨 GaN의 성장 특성에 관한 TEM 분석)

  • 신희연;정성훈;유지범;서수정;양철웅
    • Journal of Surface Science and Engineering
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    • v.36 no.2
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    • pp.135-140
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    • 2003
  • The difference in lattice parameter and thermal expansion coefficient between GaN and Si which results in many defects into the grown GaN is larger than that between GaN and sapphire. In order to obtain high quality GaN films on Si substrate, it is essential to understand growth characteristics of GaN. In this study, GaN layers were grown on Si(111) substrates by MOCVD at three different GaN growth temperatures ($900^{\circ}C$, $1,000^{\circ}C$ and $1,100^{\circ}C$), using AlN and LT-GaN buffer layers. Using TEM, we carried out the comparative investigation of growth characteristics of GaN by characterizing lattice coherency, crystallinity, orientation relationship and defects formed (transition region, stacking fault, dislocation, etc). The localized region with high defect density was formed due to the lattice mismatch between AlN buffer layer and GaN. As the growth temperature of GaN increases, the defect density and surface roughness of GaN are decreased. In the case of GaN grown at $1,100^{\circ}$, growth thickness is decreased, and columns with out-plane misorientation are formed.