• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.3-6
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• 2003

This paper describes the interface stability of Ta-Mo alloy metal on $SiO_2$ Alloy was formed by co-sputtering method, and the alloy composition was varied by controlling Ta and Mo sputtering power. When the atomic composition of Ta was about 91%, the measured work function was 4.2eV that is suitable for NMOS gate. To identify interface stability between Ta-Mo alloy metal and $SiO_2$, C-V, FE-SEM(Field Emission-SEM), and XRD(X-ray diffraction) were performed on the samples annealed with rapid thermal processor between $600^{\circ}C$ and $900^{\circ}C$. Even after $900^{\circ}C$ rapid thermal annealing, excellent interface stability and electrical properties were observed. Also, thermodynamic analysis was studied to compare with experimental results.

• Journal of Life Science
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• v.26 no.10
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• pp.1121-1129
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• 2016

High-molecular-weight glutenin subunits (HMW-GSs) are extremely important determinants of the functional properties of wheat dough. Transgenic rice plants containing a wheat TaGlu-Ax1 gene encoding a HMG-GS were produced from the Korean wheat cultivar ‘Jokyeong’ and used to enhance the bread-making quality of rice dough using the Agrobacterium-mediated co-transformation method. Two expression cassettes with separate DNA fragments containing only TaGlu-Ax1 and hygromycin phosphotransferase II (HPTII) resistance genes were introduced separately into the Agrobacterium tumefaciens EHA105 strain for co-infection. Rice calli were infected with each EHA105 strain harboring TaGlu-Ax1 or HPTII at a 3:1 ratio of TaGlu-Ax1 and HPTII. Among 210 hygromycin-resistant T₀ plants, 20 transgenic lines harboring both the TaGlu-Ax1 and HPTII genes in the rice genome were obtained. The integration of the TaGlu-Ax1 gene into the rice genome was reconfirmed by Southern blot analysis. The transcripts and proteins of the wheat TaGlu-Ax1 were stably expressed in rice T₁ seeds. Finally, the marker-free plants harboring only the TaGlu-Ax1 gene were successfully screened in the T₁ generation. There were no morphological differences between the wild-type and marker-free transgenic plants. The quality of only one HMW-GS (TaGlu-Ax1) was unsuitable for bread making using transgenic rice dough. Greater numbers and combinations of HMW and LMW-GSs and gliadins of wheat are required to further improve the processing qualities of rice dough. TaGlu-Ax1 marker-free transgenic plants could provide good materials to make transgenic rice with improved bread-making qualities.

• Molecular & Cellular Toxicology
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• v.1 no.3
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• pp.203-208
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• 2005

Thioacetamide (TA) is potent haptotoxincant that requires metabolic activation by mixed-function oxidases. Micrcarray technology, which is massive parallel gene expression profiling in a single hybridization experiment, has provided as a powerful molecular genetic tool for biological system related toxicant. In this study we focus on the use of toxicogenomics for the determination of gene expression analysis associated with hepatotoxicity in rat liver epithelial cell line WB-F344 (WB). The WB cells was used to assess the toxic effects of TA. WB cells were exposed to two concentrations of TA-doses which caused 20% and 50% cell death were chosen and the cells exposed for periods of 2 and 24 h. Our data revealed that following the 2-h exposure at the both of doses and 24-h exposure at the low doses, few changes in gene expression were detected. However, after 24-h exposure of the cells to the high concentration, multiple changes in gene expression were observed. TA treatment gave rise predominantly to up-regulation of genes involved in cell cycle and cell death, but down-regulation of genes involves in cell adhesion and calcium ion binding. Exposure of WB cells to higher doses of the TA gave rise to more changes in gene expression at lower exposure times. These results show that TA regulates expression of numerous genes via direct molecular signaling mechanisms in liver cells.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.2
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• pp.99-106
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• 1993

A relationship $(T_c = -17.869C^2+1840.2C-46623)$ between Curie Temperature$(T_c)$ and (C), $Li_2O$ mole percent(%) was established from the measurement results of Curie temperature $(T_c)$) analysed by DTA(Differential Thermal Analysis) in the range from 48.50 to 49.00 $Li_2O$ mole %. Congruent melt composition of $LiTaO_3$ single crystal was to be 48.65 $Li_2O$ mole % and its Curie temperature was also determined to be $610{\pm}1^{\circ}C$ from the results of Curie temperature difference, ${\Delta}T (T_{c(Top)}-T{_c(Tail)})$ of Czochralski grown $LiTaO_3$ crystals and the distribution coefficient(k). The k was calculated from $LiO_2$ mole ratio of initial melt to final melt and initial crystal to final crystal in the range from 48.60 to 48.70 $Li_2O$ mole %.

• Korean Journal of Materials Research
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• v.9 no.6
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• pp.551-555
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• 1999

The deposition condition to obtain stoichiometric $Ta_2$O\ulcorner films, which is still controversial, using magnetron reactive sputtering was studied. The films were deposited by varying $O_2$gas flow rate with sputtering power and Ar gas flow rate of 200W and 60 sccm fixed. At the conditions of $O_2$ gas flow rate over 20 sccm, amorphous Tantalum oxide films with the refractive index of 2.1 and dielectric constant of 25 were deposited. Among those films, the capacitors dielectric properties of the film deposited at the condition of $O_2$ gas flow rate 50 sccm was best, the leakage current was 1$\times$10\ulcornerA/$\textrm{cm}^2$ at the electric field strength of 0.5 MC/cm and the breakdown field strength was over 2.0 MV/cm. This result could be explained from the analysis comparing with a standard sample using RBS because the composition of the film deposited at this condition was closest to the stoichiometric $Ta_2$O\ulcorner. The result of XPS analysis convinced that this film was stoichiometric $Ta_2$O\ulcorner film. A maximum cathode voltage was observed when $O_2$gas flow rate was 30 sccm. This shows that the Schiller's proposition that one can obtain stoichiometric films at the condition of maximum cathode voltage is not correct and more oxygen than that of the maximum voltage condition is necessary to deposit the stoichiometric Ta$_2$O\ulcorner films.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.23-25
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• 2001

In this work, the $Ta_2O_5$ thin films were deposited on Pt/n-Si substrate by reactive magnetron sputtering and the RTA treatment at temperatures range from 650 to $750^{\circ}C$ in $O_2$ and vacuum. X-ray diffraction analysis, FE SEM, dielectric properties and leakage current density have been used to study the structural and electrical properties of the $Ta_2O_5$ thin films. XRD result showed that as- deposited films were amorphous and the annealed films crystallized (<$700^{\circ}C$) into ${\beta}-Ta_2O_5$. The crystallinity increased with temperature in terms of an increase in the intensity of the diffracted peaks(${\beta}-Ta_2O_5$) and annealing in oxygen reduced defect dang1ing Ta-O bonds. As deposited $Ta_2O_5$ films show the leakage current density $10^{-7}$ to $10^{-8}$ (A/$cm^2)$ at low electric fields (<200 kV/cm) However, it was found leakage current density of $Ta_2O_5$ thin films decreased with $O_2$ ambient annealing. The dielectric constant of the as deposited $Ta_2O_5$ thin films was ${\varepsilon}_r$ $9{\sim}11$ but the dielectric constant was increased after RTA treatment in $O_2$ ambient more then in vacuum.

• Journal of the Korean Vacuum Society
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• v.13 no.1
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• pp.22-28
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• 2004

Ta films were deposited on Si (100) substrates at zero substrate bias voltage and a substrate bias voltage of -125 V ($V_{s}$ = -125 V) using a non-mass separated ion beam deposition system. To investigate the effect of the negative substrate bias voltage on the impurity concentration in the Ta films, secondary ion mass spectrometry (SIMS) was used to determine impurities in the Ta films. By the SIMS depth profiles with $Cs^{+}$ cluster ion beam, high intensities of O, C and Si were clearly found in the Ta film at $V_{s}$ = 0 V, whereas these impurities remarkably decreased in the Ta film at $V_{s}$ = -125 V. Furthermore, from the SIMS result with $Cs^{+}$ and $O_2^{+}$ ion beams, it was found that applying the negative substrate bias voltage could affect individual impurity contents in the Ta films during the deposition. Discussions concerning the effect of the negative substrate bias voltage on the impurity concentration of Ta films will be described in details.

• Journal of the Korean Ceramic Society
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• v.40 no.12
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• pp.1165-1169
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• 2003

The Ta$_2$O$_{5}$ thin film was deposited on Si-(III) and glass substrate with the change of Ar:O$_2$ gas flow rate in the assist ion gun by the Dual ion-Beam Sputtering (DIBS). As the $O_2$ gas flow of the assist ion gun was decreased, the deposition rate of the thin films decreased. The refractive index was fixed (2.11, at 1550 nm) without regarding to $O_2$ gas flow of the range 3∼12 sccm in assist ion gun. The condition of Ar:O$_2$=3:12 was formatted stoichiometry composition of Ta$_2$O$_{5}$ and the ms roughness was small (0.183 nm).

• Journal of the Korea Institute of Information Security & Cryptology
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• v.20 no.6
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• pp.171-181
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• 2010

The iCAS specification that download CAS s/w image from the IPTV provider's server to the IPTV devices provides compatibility and service mobility between the IPTV service providers. However, to ensure mobility of the device, a TA(Trust Authority) within an IPTV eco-system that is capable of systematically managing keys or certificates is required. In the Legacy CAS, solution providers for CAS play a critical role of carrying out the TA. However, in order to standardize the device mobility, a TA should be established by implementing iCAS technology that manages the entire IPTV eco-system including iCAS. In this paper, we analysis TA issues related iCAS commercialization, and propose TA establishment strategy for IPTV service in iCAS environment.

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.11a
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• pp.113-113
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• 1993