• Transactions on Electrical and Electronic Materials
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• v.18 no.2
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• pp.74-77
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• 2017

In this work, we investigated the etching characteristics of TaNO thin films and the selectivity of TaNO to $SiO_2$ in an $O_2$/CF4/Ar inductively coupled plasma (ICP) system. The maximum etch rate of TaNO thin film was 297.1 nm/min at a gas mixing ratio of O2/CF4/Ar (6:16:4 sccm). At the same time, the etch rate was measured as a function of the etching parameters, such as the RF power, DC-bias voltage, and process pressure. X-ray photoelectron spectroscopy analysis showed the efficient destruction of the oxide bonds by the ion bombardment, as well as the accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the $CF_4$-containing plasmas.

• Journal of the Korean institute of surface engineering
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• v.42 no.4
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• pp.161-168
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• 2009

Effects of TiN/Ti multilayer coating on the Ti-30Ta-xZr alloy surface were studied by using various experiments. The Ti-30Ta containing Zr (5, 10 and 15 wt%) were melted 10 times to improve chemical homogeneity by using a vacuum furnace. And then samples were homogenized for 24 hrs at $1000^{\circ}C$. The specimens were prepared for TiN/Ti coating by cutting and polishing. The prepared specimens were coated with TiN/Ti multilayers by using DC magnetron sputtering method. The analyses of coated surface and coated layer were carried out by field emission scanning electron microscope(FE-SEM), EDX, and X-ray diffractometer(XRD). From the microstructure and XRD analysis of Ti-30Ta-xZr alloys, The equiaxed structure was changed to needle-like structure with increasing Zr content. And $\alpha$-peak and elastic modulus increased as Zr content increased. The $\alpha$ and $\beta$ phase predominantly were found in the specimen containing high Zr content. According to the analysis of TiN/Ti coating layer, the surface defects and structures of Ti-30Ta-xZr were covered with TiN/Ti coating layer and surface roughness decreased.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.173-181
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• 1992

Tantalum pentoxide($Ta_{2}O_{5}$) thin films on p-type (100) silicon wafer were fabricated by RF reactive sputtering. Physical properties and structure of the specimens were examined by XRD and AES. From the C-V analysis, the dielectric constant of $Ta_{2}O_{5}$ films was in the range of 10-12 in the reactive gas atmosphere in which 10% of oxygen gas is mixed. The ratio of Ta : 0 was 1 : 2 and 1 : 2.49 by AES and RBS examination, respectively. The heat-treatment at $700^{\circ}C$ in $O_{2}$ ambient led to induce crystallization. When the heat-treatment temperature was $1000^{\circ}C$, the dielectric constant was 20.5 in $O_{2}$ ambient and 23 in $N_{2}$ ambient, respectively. The crystal structure of $Ta_{2}O_{5}$ film was pseudo hexagonal of ${\delta}-Ta_{2}O_{5}$. The flat band voltage shift(${\Delta}V_{FB}$) of the specimens and the leakage current density were decreased for higher oxygen mixing ratio. The maximum breakdown field was 2.4MV/cm at the oxygen mixing ratio of 10%. The $Ta_{2}O_{5}$ films will be applicable to hydrogen ion sensitive film and gate oxide material for memory device.

• Korean Journal of Materials Research
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• v.4 no.5
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• pp.550-555
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• 1994

The effects of RTA treatment on the leakage current have been studied for tantalum pentoxide( $Ta_2O_5$) films deposited by PECVD on P-type(100) Si substrate using $TaCl_5$(99.99%) and $N_2O$(99.99%) gaseous mixture. The refractive index increased with increasing the deposition temperature and the maximum deposition rate was obtained at $500^{\circ}C$. The Ta-0 bond peak intensity of as-deposited $Ta_2O_5$ increased with increasing the deposition temperature through FT-IR analysis and the leakage current value was decreased with increasing the deposition temperature. The small leakage current value obtained after RTA treatment of as-deposited $Ta_2O_5$ was found to be due to the reduction of 0-deficient structure in the film. The increases of the oxygen coacentration and the Ta-0 bond peak intensity in the film after RTA treatment were measured by AES and FT-IR analyses.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.2
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• pp.75-81
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• 1999

$CaTiO_3$-$ La(Mg_{2/3}Ta_{1/3})O_3$ solid solutions were prepared in order to improve the microwave dielectric properties of $CaTiO_3$. XRD analysis revealed that the crystal structure of the solid solution changed from orthorhombic to monoclinic as the amount of $ La(Mg_{2/3}Ta_{1/3})O_3$increased. When x=0.3 in (1-x)$CaTiO_3+xLa(Mg_{2/3}Ta_{1/3})O_3$, the dielectric constant was 49, the temperature coefficient of resonance frequency was +$14ppm/^{\circ}C$, and $Q \times f_0$ was 17000.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.627-631
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• 2011

[ $[Li_{0.04}(Na_{0.54}K_{0.46})_{0.96}](Nb_{1-0.04-X}TaxSb_{0.04})O_3$ ]lead-free piezoelectric ceramics have been prepared by normal sintering at $1,100^{\circ}C$ for 5 h. X-ray diffraction analysis indicated that specimens demonstrate orthorhombic symmetry when $Ta\leq5$ mol%. While transforming into tetragonal symmetry when $x\geq20$ mol%. These suggest that the orthorhombic and tetragonal phases co-exist in the ceramics with 5 mol% $cm^3$. As the result of SEM images, the grain growth was decreased with the increase of Ta substitution. The ceramics become 'softening', leading to improvements in $k_p$, $\varepsilon_r$ and $d_{33}$, but a decrease in $Q_m$. Excellent properties of $k_p$= 0.46, $d_{33}$= 293 pC/N, ${\varepsilon}_r$= 1,583 and Tc= $340^{\circ}C$ were obtained when Ta= 15 mol%.

• The Journal of Korean Medicine
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• v.39 no.4
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• pp.62-73
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• 2018

Objectives: This study conducted a retrospective review to compare the effectiveness of herbal medicine, while confirming the effectiveness of Korean medicine (KM) in traffic accidents (TA). Methods: We investigated the medical records of TA patients who were hospitalized at Muuido Korean medicine hospital from January 2016 to June 2018 retrospectively. Medical records included general characteristics (Gender, age), TA & treatment-related information (Collision type, chief complaint, hospitalization period, and herbal medicine prescription), and clinical scales (Five-scale improvement, numerical rating scale (NRS)). Statistical analysis was performed for data distribution and effectiveness comparison. Results: 755 TA patients showed 0.78:1 gender ratio. 20-50s years old, rear collision, pain in the cervical and lumbar spine, and hospitalization period within 14 days were the majority. KM improved 83.18% of 755 TA patients' symptoms and ROM over 'improvement' level, which indicated 30-70% improvement. With common KM treatments including acupuncture, cupping, heat therapy, and manipulation therapy, TA patients received various herbal medicines and herbal medicine for breaking severe blood stasis (Tongdo-san) showed improvement in both five-scale improvement and NRS change at the same time. Conclusions: We could confirm the effectiveness of KM, particularly herbal medicine in TA. It would be necessary to develop new herbal medicines such as Tongdo-san to treat TA-related symptoms.

• Journal of Oral Medicine and Pain
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• v.48 no.4
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• pp.159-168
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• 2023

Purpose: Coordinated activity between the jaw and neck muscles is important in oral motor tasks such as chewing. This study examined coherence between the jaw and neck muscles during chewing in healthy adults. Methods: A total of 12 healthy adults underwent electromyography (EMG) of the jaw and neck muscles during right-sided chewing at a frequency of 1 Hz. Surface electrodes were placed over the temporalis (TA), masseter (MS), anterior digastric (DA), and sternocleidomastoid (SM) muscles on the right side. EMG signals were processed for coherence and phase analysis using advanced signal processing techniques. Results: The MS and TA muscle pair exhibited high synchronization when chewing (median coherence=0.992). Contrarily, the coherence values between the MS and DA, as well as the MS and SM muscle pairs, were relatively low (median coherence=0.848 and 0.957, respectively). Phase analysis revealed minimal temporal differences between the MS and TA muscle pair and the MS and SM muscle pair, whereas substantial phase shifts were observed between the MS and DA muscle pair. Conclusions: During chewing in healthy adults, the TA muscle works synergistically whereas the DA muscle antagonistically with the MS muscle, and the SM muscle supports the activity of the MS muscle. The observed synchrony and coordination provide insights into the intricate interplay among these muscles during oral motor tasks.

• Korean Journal of Materials Research
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• v.14 no.3
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• pp.211-217
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• 2004

The oxidation behaviors of Ti-10Ta-10Nb alloy and Ti-6Al-4V alloy were studied in dry air atmosphere. Specimens were melted in consumable vacuum arc furnace and homogenized at $1050^{\circ}C$ for 24 h. Hot rolling was performed at $1000^{\circ}C$. Specimens of the alloys were oxidized as the temperature range $400~650^{\circ}C$ for 30 min. The oxidation behavior of the alloys was analysed by optical microscope, SEM/EDX, XRD, XPS and TGA. Immersion test was performed in 1% Lactic acid. In the microscope observation, oxide layer of Ti-10Ta-10Nb alloy was denser and thinner than Ti-6Al-4V's. The weight gains during the oxidation rapidly increased at the temperature above $600^{\circ}C$ in Ti-6Al-4V's alloy and$ 700^{\circ}C$ in Ti-10Ta-10Nb alloy. According to XRD results, oxide layers were composed of mostly $TiO_2$(rutile) phase. It was analysed that the passive film of the Ti alloys consisted of $TiO_2$ through X-ray photoelectron spectroscopy(XPS) analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.3-6
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• 2003

This paper describes the interface stability of Ta-Mo alloy metal on $SiO_2$ Alloy was formed by co-sputtering method, and the alloy composition was varied by controlling Ta and Mo sputtering power. When the atomic composition of Ta was about 91%, the measured work function was 4.2eV that is suitable for NMOS gate. To identify interface stability between Ta-Mo alloy metal and $SiO_2$, C-V, FE-SEM(Field Emission-SEM), and XRD(X-ray diffraction) were performed on the samples annealed with rapid thermal processor between $600^{\circ}C$ and $900^{\circ}C$. Even after $900^{\circ}C$ rapid thermal annealing, excellent interface stability and electrical properties were observed. Also, thermodynamic analysis was studied to compare with experimental results.