• Title/Summary/Keyword: T-junction

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A Stripline 10-Way Power Divider for the Feed Network of an S-band Linear Array Antenna (S-대역 선형 배열 안테나의 급전 회로를 위한 스트립라인 10-출력 전력분배기)

  • Park, Il-Ho;Kim, Rak-Young;Park, Jung-Yong;Jeong, Myung-Deuk;Kim, Dong-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.20 no.3
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    • pp.280-288
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    • 2009
  • In this paper, a high-power and low-loss stripline 10-way power divider is designed and fabricated fur the feed network of an S-band linear array antenna with Chebyshev current distribution which has a narrow beam width and low side lobe level(SLL) of 35 dB or more. The unit cell of the power divider is based on a T-junction power divider and the whole divider is comprised of the cascaded unit cells. The multi-stage impedance transformer and modified ring hybrid are used in designing the power divider for performance improvement. And the reflection loss and insertion loss are improved by modifying a connector structure for a coaxial-to-stripline transition.

Characteristics of Thermal Radiation Pastes Containing Graphite and Carbon Nanotube (흑연 및 탄소나노튜브 혼합 방열도료의 특성)

  • Lee, Ji Hun;Song, Man-Ho;Kang, Chan Hyoung
    • Journal of the Korean institute of surface engineering
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    • v.49 no.2
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    • pp.218-224
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    • 2016
  • Thermal radiation pastes were prepared by dispersing carbon materials as fillers with a content of 1 weight percent in an acrylic resin. The kind of fillers was as follows; $25{\mu}m$ graphite, $45{\mu}m$ graphite, $15{\mu}m$ carbon nanotube(CNT), a 1:1 mixture of $25{\mu}m$ graphite and $15{\mu}m$ CNT, and a 1:1 mixture of $45{\mu}m$ graphite and $15{\mu}m$ CNT. Thermal emissivity was measured as 0.890 for the samples with graphite only, 0.893 for that with CNT only, and 0.892 for those containing both. After coating prepared pastes on a side of 0.4 mm thick aluminium plate and placing the plate over an opening of a box maintained at $92^{\circ}C$ with the coated side out, the temperatures on the uncoated side of the plates were measured. The samples containing graphite and CNT showed the lowest temperatures. The paste with mixed fillers was coated on the back side of the PCB of an LED module and thermal analysis was carried out using Thermal Transient Tester (T3ster) in a still air box. The thermal resistance of the module with coated PCB was measured as 14.34 K/W whereas that with uncoated PCB was 15.02 K/W. The structure function analysis of T3ster data revealed that the difference between junction and ambient temperatures was $13.8^{\circ}C$ for the coated case and $18.0^{\circ}C$ for the uncoated. From the infrared images of heated LED modules, the hottest-spot temperature of the module with coated PCB was lower than that of the uncoated one for a given period of LED operation.

Ku-Band 50-W GaN HEMT Internally-Matched Power Amplifier (Ku-대역 50 W급 GaN HEMT 내부 정합 전력증폭기)

  • Kim, Seil;Lee, Min-Pyo;Hong, Sung-June;Lim, Jun-Su;Kim, Dong-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.30 no.1
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    • pp.8-11
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    • 2019
  • In this paper, a Ku-band 50-W internally-matched power amplifier is designed and fabricated using a CGHV1J070D GaN HEMT from Wolfspeed. To obtain the same magnitudes and phases for the output signals of the unit transistor cells, which constitute a power transistor, a slit pattern and an asymmetric T-junction are used in the input and output matching circuits. The internally-matched power amplifier is fabricated on two different thin-film substrates with relative dielectric constants of 40 and 9.8, respectively, and is measured under pulsed conditions with a pulse period of $330{\mu}s$ and a duty cycle of 6%. The measured results show a maximum output power of 50~73 W, a drain efficiency of 35.4~46.4%, and a power gain of 4.5~6.5 dB from 16.2 to 16.8 GHz.

Microstructural and Magnetic Properties of CoFeB/MgO/CoFeB Based Magnetic Tunnel Junction Depending on Capping Layer Materials (Capping층 재료에 따른 CoFeB/MgO/CoFeB 자기터널접합의 미세구조와 자기저항 특성)

  • Chung, Ha-Chang;Lee, Seong-Rae
    • Journal of the Korean Magnetics Society
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    • v.17 no.4
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    • pp.162-165
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    • 2007
  • We investigated the effects of the capping layer materials on the crystallization of the amorphous top-CoFeB (t-CoFeB) electrode and the magnetoresistance properties of the magnetic tunnel junctions (MTJs). When the hcp(002)-textured Ru capping layer was used, the amorphous t-CoFeB was crystallized to bcc-CoFe(110). The CoFe(110)/Ru(002) texture relation can be minimized the lattice mismatch down to 5.6%. However, when the fine polycrystalline but almost amorphous TiAl or amorphous ZrAl were used, the amorphous t-CoFeB was crystallized to bcc-CoFe(002). When the amorphous capping materials were used, the evolution of the t-CoFeB texture was affected mainly by the MgO(001) texture. Consequently, the M ratios of the annealed MTJ capped with the ZrAl and TiAl (72.7 and 71.8%) are relatively higher than that of the MTJ with Ru capping layer (46.7%). In conclusions, the texture evolution of the amorphous t-CoFeB during the post deposition annealing could be controlled by the crystallinity of the adjacent capping layer and in turn, it affects the TMR ratio of MTJs.

A New Analysis of Waveguide Structure Using the Iterative Green's Function Method Applicable to the Electromagnetics Instruction (전파 교육에 적용할 수 있는 반복 그린함수 방법을 이용한 전자파 도파관 구조의 새로운 해석법)

  • 조용희
    • Proceedings of the Korea Contents Association Conference
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    • 2003.05a
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    • pp.403-405
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    • 2003
  • An iterative Green's function method (IGFM) is introduced to analyze complex electromagnetic waveguide structures in view of the university student. The IGFM utilizes the Green's function and iteration scheme. The physical mechanism with simple mathematical equations is used to formulate the IGFM. Scattering characteristics of a standard E-plane T-junction in a parallel-plate waveguide are theoretically investigated in terms of the IGFM. Numerical computations illustrate the characteristics of resection and transmission powers versus frequency. A dominant-mode solution is presented and compared with the higher-mode solutions.

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Novel Analysis of Waveguide Stub Structure Using Iterative Green's Function Method (반복 그린 함수 방법을 이용한 도파관 스텁 구조의 새로운 해석법)

  • Cho, Yong-Heui
    • The Journal of the Korea Contents Association
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    • v.7 no.2
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    • pp.125-131
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    • 2007
  • An iterative Green's function method (IGFM) is introduced in order to analyze complex electromagnetic waveguide stub structures in view of a university student. The IGFM utilizes a Green's function approach and an regional iteration scheme. A physical iteration mechanism with simple mathematical equations facilitates clear formulations of the IGFM. Scattering characteristics of a standard E-plane T-junction stub in a parallel-plate waveguide are theoretically investigated in terms of the IGFM. Numerical computations illustrate the characteristics of reflection and transmission powers versus frequency.

The Construction Method which attached Complex Stone Panel to Concrete Wall using High-Frequency Holt-Melt Machine (고주파 접착기를 사용한 복합석재판의 콘크리트 벽체 부착 시공)

  • Oh, Chang-Won
    • Proceedings of the Korean Institute of Building Construction Conference
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    • 2010.05a
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    • pp.45-49
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    • 2010
  • The contamination(stain phenomenon) of natural marble(sipeol, bianko) of art wall of on-site interior finishing system and wall of elevator hall has occurred. The bottom of the art wall of stone junction tile has defects as cracks. To solve these problems, our research team developed eco-friendly complex stone panel(stone 4T + cement board 6T) and high-frequency hot-melt construction method that can construct in winter.

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A Design Evaluation of Strained Si-SiGe on Insulator (SSOI) Based Sub-50 nm nMOSFETs

  • Nawaz, Muhammad;Ostling, Mikael
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.5 no.2
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    • pp.136-147
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    • 2005
  • A theoretical design evaluation based on a hydrodynamic transport simulation of strained Si-SiGe on insulator (SSOI) type nMOSFETs is reported. Although, the net performance improvement is quite limited by the short channel effects, simulation results clearly show that the strained Si-SiGe type nMOSFETs are well-suited for gate lengths down to 20 nm. Simulation results show that the improvement in the transconductance with decreasing gate length is limited by the long-range Coulomb scattering. An influence of lateral and vertical diffusion of shallow dopants in the source/drain extension regions on the device performance (i.e., threshold voltage shift, subthreshold slope, current drivability and transconductance) is quantitatively assessed. An optimum layer thickness ($t_{si}$ of 5 and $t_{sg}$ of 10 nm) with shallow Junction depth (5-10 nm) and controlled lateral diffusion with steep doping gradient is needed to realize the sub-50 nm gate strained Si-SiGe type nMOSFETs.

A case of partial trisomy 3p syndrome with rare clinical manifestations

  • Han, Dong-Hoon;Chang, Ji-Young;Lee, Woo-In;Bae, Chong-Woo
    • Clinical and Experimental Pediatrics
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    • v.55 no.3
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    • pp.107-110
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    • 2012
  • Partial trisomy 3p results from either unbalanced translocation or $de$ $novo$ duplication. Common clinical features consist of dysmorphic facial features, congenital heart defects, psychomotor and mental retardation, abnormal muscle tone, and hypoplastic genitalia. In this paper, we report a case of partial trisomy 3p with rare clinical manifestations. A full-term, female newborn was transferred to our clinic. She had cleft lip-plate, dysgenesis of the corpus callosum, patent ductus arteriosus, pulmonary hypertension, and severe right-sided hydronephrosis, associated with ureteropelvic junction obstruction. Cytogenetic investigation revealed partial trisomy 3p; 46,XX,der(4)t(3;4)(p21.1;p16). The karyotype of her father showed a balanced translocation, t(3;4)(p21.1;p16). Therefore, the size of duplication can be an important factor.

Operation of a High-T$_c$ Rapid Single-Flux-Quantum 4-stage Shift Register

  • Park, J.H.;Kim, Y.H.;Kang, J.H.;Hahn, T.S.;Kim, C.H.;Lee, J.M.
    • Progress in Superconductivity
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    • v.1 no.2
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    • pp.105-109
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    • 2000
  • We have designed and fabricated a single-flux-quantum(SFQ) four-stage shift register using YBCO bicrystal Josephson junctions, and tested its operations using a digital measurement set-up. The circuit consists of 4 shift register stages and a read SQUID placed next to each side of the shift register. Each SQUID was inductively coupled to the nearby shift register stage. The major obstacle in testing the circuits was the interference between the two read SQUIDs, and we could get over the problem by determining the correct operation points of the SQUID from the simultaneously measured modulation curves. Loaded data ('1' or '0') were successfully shifted from a stage to the next by a controlled current pulse injected to the bias lines located between the stages, and the corresponding correct data shifts were observed with the two read SQUIDs.

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