• Title/Summary/Keyword: T-junction

Search Result 399, Processing Time 0.036 seconds

개선된 링구조 공진기 설계 및 제작 (A Design of Improved Ring Resonator)

  • 홍상준;하성재;이영준;박병규;김창범;이근태;안창돈;홍의석
    • 한국전자파학회:학술대회논문집
    • /
    • 한국전자파학회 2002년도 종합학술발표회 논문집 Vol.12 No.1
    • /
    • pp.136-140
    • /
    • 2002
  • In this paper, newly constructed 5.6 ㎓ ring resonator by using a T-Junction and a parallel transmission line. The resonator's size reduced twice more than a current ring and a hair-pin resonator at this paper's center frequency The loaded Q value is 240∼250 at center frequency. also, It was explained by RLC equivalent equation for the resonator.

  • PDF

Notes on the Volcanic of S. Miguel Island

  • Nnnes, J.C.;Braga, T.;Constancia, J.P.
    • 동굴
    • /
    • 제5호
    • /
    • pp.66-69
    • /
    • 1997
  • The island of S.Miguel is part of the Azores, an archipelago composed of nine volcanic islands situated between the european and american continents. Aligned in a general WNW -ESE trend, between latitudes 37$^{\circ}$ -40$^{\circ}$ N and longitude 25$^{\circ}$ -31$^{\circ}$ W, the Azores islands show a very special geotectonic setting, at the triple junction of the Eurasian, African and North American lithospheric plates.(omitted)

  • PDF

Oncologic Feasibility of Proximal Gastrectomy in Upper Third Advanced Gastric and Esophagogastric Junctional Cancer

  • Yun, Won-Gun;Lim, Myung-Hoon;Kim, Sarah;Kim, Sa-Hong;Park, Ji-Hyeon;Kong, Seong-Ho;Park, Do Joong;Lee, Hyuk-Joon;Yang, Han-Kwang
    • Journal of Gastric Cancer
    • /
    • 제21권2호
    • /
    • pp.169-178
    • /
    • 2021
  • Purpose: The aim of this study was to investigate the oncologic safety and identify potential candidates for proximal gastrectomy (PG) in upper third advanced gastric cancer (AGC) and esophagogastric junction (EGJ) cancers. Materials and Methods: Among 5,665 patients who underwent gastrectomy for gastric adenocarcinoma between January 2011 and December 2017, 327 patients who underwent total gastrectomy with standard lymph node (LN) dissection for upper third AGC and Siewert type II EGJ cancers were enrolled. We analyzed the correlation between the metastatic rates of distal LNs (No. 4d, 5, 6, and 12a) around the lower part of the stomach and the clinicopathological characteristics. We identified subgroups with no metastasis to the distal LNs. Results: The metastatic rate of distal LNs in proximal AGC and Siewert type II EGJ cancers was 7.0% (23 of 327 patients). On multivariate analysis, pathological T stage (P=0.001), tumor size (P=0.043), and middle third invasion (P=0.003) were significantly associated with distal LN metastases. Pathological 'T2 stage' (n=88), or 'T3 stage with ≤5 cm tumor size' (n=87) showed no metastasis in distal LNs, regardless of middle third invasion. Pathological T3 stage with tumor size > 5 cm (n=61) and T4 stage (n=91) had metastasis in the distal LNs. Conclusions: In the upper third AGC and Siewert type II EGJ cancer, pathological T2 and small-sized T3 stage groups are possible candidates for PG in cases without distal LN metastasis. Further validation studies are required for clinical application.

저에너지 이온 주입 방법으로 형성된 박막$ p^+-n$ 접합의 열처리 조건에 따른 특성 (The effect of annealing conditions on ultra shallow $ p^+-n$ junctions formed by low energy ion implantation)

  • 김재영;이충근;홍신남
    • 대한전자공학회논문지SD
    • /
    • 제41권5호
    • /
    • pp.37-42
    • /
    • 2004
  • 본 논문에서는 선비정질화, 저에너지 이온 주입, 이중 열처리 공정을 이용하여 p/sup +/-n 박막 접합을 형성하였다. Ge 이온을 이용하여 결정 Si 기판을 선비정질화하였다. 선비정질화된 시편과 결정 기판에 p-형 불순물인 BF₂이온을 주입하여 접합을 형성하였다. 열처리는 급속 열처리 (RTA : rapid thermal anneal) 방법과 850℃의 노 열처리 (FA : furnace anneal) 방법을 병행하였다. 두 단계의 이중 열처리 방법으로 네 가지 조건을 사용하였는데, 이는 RTA(750℃/10초)+Ft, FA+RTA(750℃/10초), RTA(1000℃/10초)+F4 FA+RTA(1000℃/10초)이다. Ge 선비정질화를 통하여 시편의 접합 깊이를 감소시킬 수 있었다. RTA 온도가 1000℃인 경우에는 RTA보다는 FA를 먼저 수행하는 것이 접합 깊이(x/sub j/), 면저항(R/sub s/), R/sub s/ x/sub j/, 누설 전류 등의 모든 면에서 유리함을 알 수 있었다.

Outcomes of Abdominal Total Gastrectomy for Type II and III Gastroesophageal Junction Tumors: Single Center's Experience in Korea

  • Kim, Kyoung-Tai;Jeong, Oh;Jung, Mi-Ran;Ryu, Seong-Yeop;Park, Young-Kyu
    • Journal of Gastric Cancer
    • /
    • 제12권1호
    • /
    • pp.36-42
    • /
    • 2012
  • Purpose: The aim of this study was to evaluate the surgical outcomes of abdominal total gastrectomy, without mediastinal lymph node dissection for type II and III gastroesophageal junction (GEJ) cancers. Materials and Methods: We retrospectively reviewed surgical outcomes in 67 consecutive patients with type II and III GEJ cancers that were treated by the surgical resection between 2004 and 2008. Results: Thirty (45%) patients had type II and 37 (55%) had type III tumor. Among the 65 (97%) patients with curative surgery, 21 (31%) patients underwent the extended total gastrectomy with trans-hiatal distal esophageal resection, and in 44 (66%) patients, abdominal total gastrectomy alone was done. Palliative gastrectomy was performed in two patients due to the accompanying peritoneal metastasis. The postoperative morbidity and mortality rates were 21.4% and 1.5%, respectively. After a median follow up of 36 months, the overall 3-years was 68%, without any differences between the Siewert types or the operative approaches (transhiatal approach vs. abdominal approach alone). On the univariate analysis, the T stage, N stage and R0 resection were found to be associated with the survival, and multivariate analysis revealed that the N stage was a poor independent prognostic factor for survival. Conclusions: Type II and III GEJ cancers may successfully be treated with the abdominal total gastrectomy, without mediastinal lymph node dissection in the Korean population.

고성능 저전압 모바일향 90nm DRAM을 위한 비대칭 채널구조를 갖는 Recess Channel Array Transistor의 제작 및 특성 (A study of Recess Channel Array Transistor with asymmetry channel for high performance and low voltage Mobile 90nm DRAMs)

  • 김상범;이진우;박양근;신수호;이은철;이동준;배동일;이상현;노병혁;정태영;김길호
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
    • /
    • pp.163-166
    • /
    • 2004
  • 모바일향 90nm DRAM을 개발하기 위하여 비대칭 채널 구조를 갖는 Recess Channel Array Transistor (RCAT)로 cell transistor를 구현하였다. DRAM cell transistor에서 junction leakage current 증가는 DRAM retention time 열화에 심각한 영향을 미치는 요인으로 알려져 있으며, DRAM의 minimum feature size가 점점 감소함에 따라 short channel effect의 영향으로 junction leakage current는 더욱 더 증가하게 된다. 본 실험에서는 short channel effect의 영향에 의한 junction leakage current를 감소시키기 위하여 Recess Channel Array Transistor를 도입하였고, cell transistor의 채널 영역을 비대칭으로 형성하여 data retention time을 증가시켰다. 비대칭 채널 구조을 이용하여 Recess Channel Array Transistor를 구현한 결과, sub-threshold 특성과 문턱전압, Body effect, 그리고, GIDL 특성에는 큰 유의차가 보이지 않았고, I-V특성인 드레인 포화전류(IDS)는 대칭 채널 구조인 transistor 대비 24.8% 정도 증가하였다. 그리고, data retention time은 2배 정도 증가하였다. 본 실험에서 얻은 결과는 향후 저전압 DRAM 개발과 응용에 상당한 기여를 할 것으로 기대된다.

  • PDF