• 대한치과교정학회지
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• 제20권2호
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• pp.227-245
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• 1990

The purpose of this study was to analyze the reorganization of periodontal ligament after collagenase treatment with autoradiography. The author compared the collagenase-treated experimental group and no-treated experimental group with control group. Fourty eight Sprague-Dawley rats were divided into nine groups, including normal control and immediate group. Closed coil springs were used between the upper incisors and the first molars with 100 grams. Collagenase and $^3H-proline$ were adminstered and the samples were sacrificed and sectioned. After being dipped into the NTB-3 emulsion the samples were analyzed with light microscope under H/E stain. Data were analyzed by t-test and ANOVA. The results were as follows: 1) Generally collagenase-treated groups got more $^3H-proline$ uptake than no-treated groups. 2) Compared with normal control group, collagenase-treated group had the same $^3H-proline$ uptake in amount at 21th day. 3) Among cemento-enamel junction, middle, apex areas, cementa-enamel junction area of collagenase-treated group arrived at normal control level earlier than no-treated group. 4) Cemento-enamel junction area had the most $^3H-proline$ incorporation amount in no-treated group, but apex area had the most in collagenase group.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.750-758
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• 2016

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

• Journal of Mechanical Science and Technology
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• 제17권8호
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• pp.1211-1218
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• 2003

The present study investigated two-phase flow distribution and phase separation of R-22 refrigerant through various types of branch tubes. The key experimental parameters were the orientation of inlet and branch tubes (horizontal and vertical), diameter ratio of branch tube to inlet tube (1 and 0.61), mass flux (200-500 kg/㎡s), and inlet quality (0.1-0.4). The predicted local pressure profile in the tube with junction was compared and generally agreed with the measured data. The local pressure profile within the pressure recovery region after the junction has to be carefully investigated for modeling the pressure drop through the branch. The equal flow distribution case can be found by adjusting the orientation of the inlet and branch tubes and the diameter ratio of the branch tube to the inlet tube. The T-junction with horizontal inlet and branch tubes showed the nearly equal phase distribution ratio. The quality at the branch tube varied from 0 to 1 as the orientation of the branch tube changed, while it varied within${\pm}$50% as the orientation of the inlet tube changed.

• Journal of Magnetics
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• 제14권1호
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• pp.11-14
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• 2009

We investigated the I-V curves and differential tunneling conductance of two, CoFeB/MgO/CoFeB-based, magnetic tunnel junctions (MTJs): one with a low tunneling magnetoresistance (TMR; 22%) and the other with a high TMR (352%). This huge TMR difference was achieved by different MgO sputter conditions rather than by different annealing or deposition temperature. In addition to the TMR difference, the junction resistances were much higher in the low-TMR MTJ than in the high-TMR MTJ. The low-TMR MTJ showed a clear parabolic behavior in the dI/dV-V curve. This high resistance and parabolic behavior were well explained by the Simmons' simple barrier model. However, the tunneling properties of the high-TMR MTJ could not be explained by this model. The characteristic tunneling properties of the high-TMR MTJ were a relatively low junction resistance, a linear relation in the I-V curve, and conduction dips in the differential tunneling conductance. We explained these features by applying the coherent tunneling model.

• 한국전자파학회논문지
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• 제23권3호
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• pp.335-342
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• 2012

저항성 격막을 이용하여 높은 격리도 특성의 Ka-대역 WR-28 도파관 전력합성기를 설계 및 제작하였다. 개발된 도파관 전력합성기는 E-plane T-junction에 슬릿을 만들어 TaN 박막 공정으로 제작된 저항성 격막을 도파관에 결합한 구조이다. 제작된 도파관 전력합성기는 -20 dB 이하의 입출력 임피던스 정합 특성을 보였으며, 0.1 dB 이하의 삽입 손실 특성을 보였다. 또한, 격리도 특성은 거의 전 대역에서 20 dB 이상의 값을 보였으며, 37 GHz 이하에서는 25 dB 이상의 특성을 보여주었다. 입력 포트 상호간의 크기 및 위상 불균형은 각각 0.1 dB와 2.5도 이하의 우수한 특성이 측정되었다.

• 한국자기학회지
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• 제16권6호
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• pp.276-278
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• 2006

스위칭 특성을 향상시키기 위하여 비정질 강자성 CoFeSiB 자유층을 갖는 자기터널접합 (MTJ)의 스위칭 특성을 연구하였다. 자기터널접합의 구조는 $Si/SiO_{2}/Ta$ 45/Ru 9.5/IrMn 10/CoFe 10/CoFe $7/AlO_{x}/CoFeSiB\;(t)/Ru\;60\;(nm)$이다. CoFeSiB는 $560\;emu/cm^{3}$의 낮은 포화자화도와 $2800\;erg/cm^{3}$의 높은 이방성 상수를 가졌다. 이러한 특성이 자기터널접합의 낮은 보자력($H_{c}$)과 높은 자장민감도를 갖게 한다. 이것은 또한 Landau-Lisfschitz-Gilbert 방정식에 근거한 미세자기 전산시뮬레이션을 통하여 submicrometersized elements에서도 확인하였다. CoFeSiB 자유층 두께를 증가함으로서 스위칭 특성은 반자화 자기장의 증가로 인하여 더욱더 나빠졌다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 somma/kms meeting
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• pp.86-86
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• 2003

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2006년도 High Temperature Superconductivity Vol.XVI
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• pp.39-39
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• 2006

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2003년도 High Temperature Superconductivity Vol.XIII
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• pp.37-37
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• 2003

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2009년도 춘계학술대회 논문집
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• pp.855-856
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• 2009