• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.27-30
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• 2006

In this paper, the undoped and Co-doped $Zn_4SnSe_6$ single crystals grown by the chemical transporting reaction(CTR) method using iodine as a transporting agent are investigated. For the crystal growth, the temperature gradient of the CTR furnace was kept at $680^{\circ}C$ for the source zone and at $780^{\circ}C$ for the growth zone for 7days. It was found from the analysis of x-ray diffraction that the $Zn_4SnSe_6$ and $Zn_4SnSe_6Co^{2+}$ compounds have a monoclinic structure. The direct optical energy band gap of the $Zn_4SnSe_6$ and $Zn_4SnSe_6Co^{2+}$ single crystals at 300K were found to be 2.146eV and 2.042eV.

• Journal of Integrative Natural Science
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• v.3 no.1
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• pp.54-59
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• 2010

A stoichiometric mixture of evaporating materials for $ZnIn_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $ZnIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnIn_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.41{\times}10^{16}cm^{-3}$ and $292cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $ZnIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $Eg(T)=1.8622eV-(5.23{\times}10^{-4}eV/K)T^2/(T+775.5K)$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.50-53
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• 1992

The GaP crystals are growth by Synthesis Solute Diffusion(SSD) method and its properties are investigated. Etch pits density along vertical direction of ingot is increased from 3.8${\times}$10$^4$cm$\^$-2/ of first freeze to 2.3${\times}$10$\^$5/cm$\^$-2/ of last freeze part. The carrier concentration and mobilities are measured to 197.49$\textrm{cm}^2$/V. sec and 6.75${\times}$10$\^$15/cm$\^$-3/ at room temperature. The temperature dependence of optical energy gap is empilically fitted to E$\_$g/(T)=2.3383-(6.082${\times}$10$\^$-4/T${\times}$/(373.096+T)[eV]. Photo-luminescence spectra measured at low temperature are consist with sharp line-spectra near band-gap energy and radiative recombination between shallow Si-donor to Zn-acceptor and its phonon reprica, and broad emission. The infrared absorption in GaP is cause to phonon coupling modes of TO, LO, LA, TA$_1$, TA$_2$and vibration modes of Ga$_2$O, Si-donor and Zn-acceptor, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.112-113
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• 2006

A stoichiometric mixture for $Cdln_2Te_4$ single crystal was prepared from horizontal electric furnace. The $Cdln_2Te_4$ single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. The (001) growth plane of oriented $Cdln_2Te_4$ single crystal was confirmed from back-reflection Laue patterns. The carrier density and mobility of $Cdln_2Te_4$ single crystal measured with Hall effect by van der Pauw method are $8.61{\times}10^{16}\;cm^{-3}$ and $242\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $Cdln_2Te_4$ single crystal obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.4750\;eV\;-\;(7.69{\times}\;10^{-3}\;eV)T^2/(T+2147)$.

• Journal of Broadcast Engineering
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• v.18 no.4
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• pp.572-588
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• 2013

In this paper, 4K-UHDTV or 8K-UHDTV and UHD-3DTV that the next generation broadcasting implementation and the possibility of direct receiving environment construction is analyzed on the terrestrial broadcasting. Particularly, we investigated the possibility by analyzing the previous and related works with regard to UHDTV transmission by DVB-T2 that is one of the best commercialized transmission mode. In order that the UHDTV broadcasting succeeds once again after completion of digital terrestrial switch over at the end of 2012, the ultra high resolution image transfer is important. However, the direct, the indoor and ubiquitous receiving environment is important in not only TV but also the personal type multimedia terminal in the sense of UHDTV service penetration. Therefore, in this paper, by using SFN and high error-correcting mode in DVB-T2 standard, the efficient frequency utilization and effective reception environment construction is illustrated. Particularly, SFN network constitution by 2 mutually different frequencies including the VHF bandwidth and UHF band, and etc. is shown. And the method that builds the free wireless receive environment by using SFN low power radio repeater and for home use gap filler is proposed. And the effect and frequency amount required are presented, when UHDTV broadcasting use 10MHz bandwidth.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.5
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• pp.179-186
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• 2007

Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy(HWE) system by evaporating the polycrystal source of $CdGa_2Se_4$ at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of single crystal $CdGa_2Se_4$ thin films measured with Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3},\;345cm^2/V{\cdot}s$ at 293 K, respectively. The photocurrent and the absorption spectra of $CdGa_2Se_4/SI$(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10 K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation $E_g(T)=2.6400eV-(7.721{\times}10^{-4}eV/K)T^2/(T+399K)$. Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) far the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-},\;B_{1^-},\;and\;C_{11}-exciton$ peaks.

• Korean Journal of Materials Research
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• v.3 no.2
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• pp.121-130
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• 1993

The GaP crystals were grown by synthesis solute diffusion method and its properties were investigated. High quality single crystals were obtained by pull-down the crystal growing ampoule with velocity of 1.75mm/day. Etch pits density along vertical direction of ingot was increased from 3.8 ${\times}{10^4}$c$m^{-2}$ of the first freeze to 2.3 ${\times}{10^5}$c$m^2$ of the last freeze part. The carrier concentration and mobilities at room temperature were measured to 197.49cc$m^2$/V.sec and 6.75 ${\times}{10^{15}}$c$m^{-3]$, respectively. The temperature dependence of optical energy gap was empirically fitted to $E_g$(T)=[2.3383-(6.082${\times}{10^{-4}}$)$T^2$/(373. 096+TJeV. Photoluminescence spectra measured at low temperature were consist with sharp line-spectra near band-gap energy due to bound-exciton and phonon participation in band edge recombination process. Zn-diffusion depth in GaP was increased with square root of diffusion time and temperature dependence of diffusion coefficient was D(Tl = 3.2 ${\times}{10^3}$exp( - 3.486/$k_{\theta}$T)c$m^2$/sec. Electroluminescence spectra of p-n GaP homojunction diode are consisted with emission at 630nm due to recombination of donor in Zn-O complex center with shallow acceptors and near band edge emission at 550nm. Photon emission at current injection level of lower than 100m A was due to the band-filling mechanism.

• Progress in Medical Physics
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• v.26 no.3
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• pp.153-159
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• 2015

This study is to evaluate thedosiemtric leaf gap (DLG) at different depths for dynamic intensity-modulated radiation therapy (IMRT) in order to evaluate the absolute dose and dose distribution according to the different positions of tumors and compare the measured and planned the multileaf collimator (MLC) transmission factor (T.F.) and DLG values. We used the 6 MV and 15 MV photon beam from linear accelerator with a Millenium 120 MLC system. After the import the DICOM RT files, we measured the absolute dose at different depths (2 cm, 5 cm, 10 cm, and 15 cm) to calculate the MLC T. F. and DLG. For 6 MV photon beam, the measured both MLC T. F. and DLG were increased with the increase the measured depths. When applying to treatment planning systemas fixed transmission factor with its value measured under the reference condition at depth of 5 cm, although the difference fixed and varied transmission factor is not significant, the dosiemtric effect could be presented according to the depth that the tumor is placed. Therefore, we are planning to investigate the treatment planning system whichthe T. F. and DLG factor according to at the different depths can be applied in the patient-specific treatment plan.

• Women's Health Nursing
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• v.18 no.3
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• pp.200-208
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• 2012

Purpose: This study was aimed to examine the gap between predicted cesarean section rate and real cesarean section rate and it's determining factors of 44 tertiary hospitals. Method: This study is a cross-sectional analysis using the data of 25,623 deliveries in 2009 drawn from homepage of Health Insurance Review and Assessment Service. Data were analyzed with t-test, F-test, Scheff$\acute{e}$ test, and logistic regression. Result: There were statistically significant differences in the gap of cesarean section rate (more gap indicates higher quality of delivery) by grade of nurse staffing and delivery cases. Hospitals with nurse staffing grade 1 to 2 had more possibility to be classified into higher grade in quality of delivery (OR 5.67, 95% CI 1.07-30.08). Also hospitals with over 500 delivery cases had more possibility be classified into higher grade in quality of delivery (OR 4.92, 95% CI 1.14-21.23, respectively). Conclusion: The finding suggests that grade of nurse staffing may influence the real cesarean section rate because nurses do a vital role to prevent unnecessary cesarean section. Further study is required to provide evidence that nurse staffing influence on patient outcome and cost-effectiveness in order to obtain adequate number of nursing staffs.

• KSTLE International Journal
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• v.3 no.1
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• pp.60-67
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• 2002

Wear on the tube-to-spring contact is investigated experimentally, The vibration of the tube causes the wear while the springs support it As for the supporting conditions, the contacting normal farce of 5 N,0 N and the gap of 0.1 mm are applied. The gap condition is for considering the influence of simultaneous impacting and sliding on wear. The wear volume and depth decreases in the order of the 5 N,0 N and the gap conditions. This is explained from the contact geometry of the spring, which is convex of smooth contour, The contact shear force is regarded smaller in the case of the gap existence compared with the other conditions. The wear mechanism is considered from SEM observation of the worn surface. The variation of the normal contact traction is analysed using the finite element analysis to estimate the slip displacement range on the contact with consulting the fretting map.