• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.3
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• pp.159-167
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• 2005

Quantization effects (QEs), which manifests when the device dimensions are comparable to the de Brogile wavelength, are becoming common physical phenomena in the present micro-/nanometer technology era. While most novel devices take advantage of QEs to achieve fast switching speed, miniature size and extremely small power consumption, the mainstream CMOS devices (with the exception of EEPROMs) are generally suffering in performance from these effects. In this paper, an analytical model accounting for the QEs and poly-depletion effects (PDEs) at the silicon (Si)/dielectric interface describing the capacitance-voltage (C-V) and current-voltage (I-V) characteristics of MOS devices with thin oxides is developed. It is also applicable to multi-layer gate-stack structures, since a general procedure is used for calculating the quantum inversion charge density. Using this inversion charge density, device characteristics are obtained. Also solutions for C-V can be quickly obtained without computational burden of solving over a physical grid. We conclude with comparison of the results obtained with our model and those obtained by self-consistent solution of the $Schr{\ddot{o}}dinger$ and Poisson equations and simulations reported previously in the literature. A good agreement was observed between them.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.1
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• pp.29-35
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• 2016

We have demonstrated a $Ti:LiNbO_3$ electro-optic electric-field sensors utilizing a $1{\times}2$ Y-fed balanced-bridge Mach-Zehnder interferometric (YBB-MZI) modulator which uses a 3-dB directional coupler at the output and dipole patch antenna. The operation and design were proved by the BPM simulation. A dc switching voltage of ~16.6 V and an extinction ratio of ~14.7 dB are observed at a wavelength of $1.3{\mu}m$. For a 20 dBm rf power, the minimum detectable electric-fields are ~1.12 V/m and ~3.3 V/m corresponding to a dynamic range of about ~22 dB and ~18 dB at frequencies 10 MHz and 50 MHz, respectively. The sensors exhibit almost linear response for the applied electric-field intensity from 0.29 V/m to 29.8 V/m.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.49 no.1
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• pp.57-63
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• 2012

In this paper, a switch sizing method is proposed in order to prevent the cross-regulation in the TM type SIDO DC-DC buck converter. In TM type SIDO DC-DC buck converter, a DCM operation is required. In the DCM operation, the inductor peak current is larger than that in the CCM. Because of the larger inductor peak current and the added switch resistance, the voltage drop is increased, resulting in possible cross-regulation. To solve this problem, the switch resistance must be considered in sizing the switch. To simplify the calculation of the resistance, the inductor current was replaced by the average load current. Using the proposed method, TM type SIDO DC-DC buck converter for camera module was designed to provide two independent supply voltage(2.8 V and 1.8 V). The designed circuit was fabricated in a standard $0.35{\mu}m$ CMOS process. At a switching frequency of 1 MHz and a load current of 200 mA, a power effciency of 80.7% was achieved.

• Journal of IKEEE
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• v.24 no.1
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• pp.319-325
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• 2020

In this paper, a discontinuous-conduction mode (DCM) DC-DC buck converter is presented for mobile device applications. The buck converter consists of compensator for stable operations, pulse-width modulation (PWM) logic, and power switches. In order to achieve small hardware form-factor, the number of off-chip components should be kept to be minimum, which can be realized with simple and efficient frequency compensation and digital soft start-up circuits. Burst-mode operation is included for preventing the efficiency from degrading under very light load condition. The DCM DC-DC buck converter is fabricated with 0.18-um BCDMOS process. Programmable output with external resistors is typically set to be 1.8V for the input voltage between 2.8 and 5.0V. With a switching frequency of 1MHz, measured maximum efficiency is 92.6% for a load current of 100mA.

• Journal of Digital Convergence
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• v.12 no.3
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• pp.141-147
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• 2014

Diffusion model is popular research topic in marketing and economy particularly for the areas of model specification and market size forecasting. In particular, Bass model can explain Roger's innovation diffusion and product life cycle through easy mathematical representation and hence the model has been widely used for the explanation of adopting innovative new products and technologies. Nonetheless, there're only a couple of pioneering researches about semiconductor market, using diffusion models. Consequently, we'd utilise NLS approach diffusion model to estimate the market potential of MOSFET, major switching device for power management of system, and explain the process to industry stakeholders and policy makers for delivery of managerial implication with pragmatic purpose.

• Journal of IKEEE
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• v.15 no.4
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• pp.330-338
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• 2011

In this paper, a current-mode buck-boost converter using Multiple switching devices is presented. The efficiency of the proposed converter is higher than that of conventional buck-boost converter. In order to improve the power efficiency at the high current level, the proposed converter is controlled with PWM(pulse width modulation) method. The converter has maximum output current 300mA, input voltage 3.3V, output voltage from 700mV to 12V, 1.5MHz oscillation frequency, and maximum efficiency 90%. Moreover, this paper proposes watchdog circuits in order to ensure the reliability and to improve the performance of dc-dc converters. An electrostatic discharge(ESD) protection circuit for deep submicron CMOS technology is presented. The proposed circuit has low triggering voltage using gate-substrate biasing techniques. Simulated result shows that the proposed ESD protection circuit has lower triggering voltage(4.1V) than that of conventional ggNMOS(8.2V).

• Journal of IKEEE
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• v.14 no.2
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• pp.82-89
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• 2010

In this paper, a buck-boost converter using three DTMOS(Dynamic Threshold Voltage MOSFET) switching devices is presented. The efficiency of the proposed converter is higher than that of conventional buck-boost converter. DTMOS with low on-resistance is designed to decrease conduction loss. The threshold voltage of DTMOS drops as the gate voltage increases, resulting in a much higher current handling capability than standard MOSFET. In order to improve the power efficiency at the high current level, the proposed converter is controlled with PWM(pulse width modulation) method. The converter has maximum output current 300mA, input voltage 3.3V, output voltage from 700mV to 12V, 1.2MHz oscillation frequency, and maximum efficiency 90%. Moreover, the LDO(low drop-out) is designed to increase the converting efficiency at the standby mode below 1mA.

• Journal of IKEEE
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• v.21 no.1
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• pp.73-76
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• 2017

SiC devices have drawn much attentions for its wide band gap material properties. Especially 4H-SiC Schottky barrier diode is widely used for its rapid switching speed and low forward voltage drop. However, the low reliability of Schottky barrier diode has many problems that Super Barrier Rectifier(SBR) was researched for alternative. makes 4H-SiC trench-type accumulation super barrier rectifier(TASBR) is analyzed and proposed in this paper. We could verified that forward voltage drop was improved 21.06% without severe degradation of reverse breakdown voltage and leakage current based on the results from 2-D numerical simulations. With this novel rectifier structure, we can expect application with less power loss.

• Bulletin of the Korean Chemical Society
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• v.33 no.4
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• pp.1135-1140
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• 2012

An electrochromatographic microchip with carboxyl-group-derivatized mono-disperse silica packing was prepared from the corresponding colloidal silica solution by utilizing capillary action and self-assembly behavior. The silica beads in water were primed by the capillary action toward the ends of cross-patterned microchannel on a cyclic olefinic copolymer (COC) substrate. Slow evaporation of water at the front of packing promoted the self-assembled packing of the beads. After thermally binding a cover plate on the chip substrate, reservoirs for sample solutions were fabricated at the ends of the microchannel. The packing at the entrances of the microchannel was silver coated to fix utilizing an electroless silver-plating technique to prevent the erosion of the packed structure caused by the sudden switching of a high voltage DC power source. The electrochromatographic behavior of the microchip was explored and compared to that of the microchip with bare silica packing in basic borate buffer. Electrophoretic migration of Rhodamine B was dominant in the microchip with the carboxyl-derivatized silica packing that resulted in a migration approximated twice as fast, while the reversible adsorption was dominant in the bare silica-packed microchip. Not only the faster migration rates of the negatively charged FITC-derivatives of amino acids but also the different migration due to the charge interaction at the packing surface were observed. The electrochromatographic characteristics were studied in detail and compared with those of the bare silica packed microchip in terms of the packing material, the separation potential, pH of the running buffer, and also the separation channel length.

• Publications of The Korean Astronomical Society
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• v.11 no.1
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• pp.109-123
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• 1996

We have developed a 5GHz continuum receiver system. The receiver is a direct type receiver. In order to reduce the noise due to the fluctuation of the gain in the amplifiers, the system employs the Dicke switching method. We made the 5GHz low-noise amplifier and the bandpass filter. The low-noise amplifier gives ${\sim}35dB$ gain and has ${\sim}210K$ noise temperature. The bandpass filter has a passband between 4.3 and 5.4GHz. We also made switch driver, video amplifiers, phase detector, and integrator. Using a 1.8 meter offset parabolic antenna, we measured the efficiency of the system. Since the antenna does not have a driver to track objects, observations were performed with the antenna fixed. The measured noise temperature of the system is ${\sim}650K$. From the observation of the blank sky, noise level was measured. It was found that the systematic noise(${\sim}0.5K$: peak to peak value) is much larger than the thermal noise. The systematic noise is possibly related to the stability of the DC power supplied to the receiver system. Besides the noise of the system, it was found that the airplanes are the very serious noise sources. We measured the radio flux of the Sun using the developed system. The observed radio flux of the Sun is ${\sim}10^6Jy$, which is close to the known value of the quiet Sun. The test observation of the Sun shows that the angular beam size of the antenna is ${\sim}2.2^{\circ}$.