• Journal of Power Electronics
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• v.12 no.2
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• pp.242-248
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• 2012

Self oscillating current fed push pull resonant inverters can be controlled without using special drivers. Dc current flows through the choke coil and the power switches, although the driving signals of the power switches are sinusoidal. When the base current is near zero, the transistors cannot be operated in switching mode. Hence higher switching power losses and instantaneous peak power during off transitions are observed. In this study, an alternative design has been proposed to overcome this problem. A prototype circuit has been built which provides dc bias current to the base of the transistors. Experimental results are compared with theoretical calculations to demonstrate the validity of the design. The proposed design decreases the peak and average power losses by about 8 times, when compared to conventional designs.

• Proceedings of the KIEE Conference
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• 2003.04a
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• pp.276-280
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• 2003

This paper presents a zero voltage and zero current switching (ZVZCS) interleaving two-transistor forward converter for high input voltage and high power application. A phase shift has a disadvantage that a circulating current and RMS current stress, conduction losses of transformer and switching devices increases. Due to this circulating current and RMS current stress, conduction losses of transformer and switching devices increases. To alleviate these problems, we propose an improved interleaving two-transistor forward Zero Voltage and Zero Current Switching (ZVZCS) dc/dc converter using a tapped inductor a snubber capacitor and two snubber diodes attached at the secondary side of transformer. The proposed ZVZCS converter is verified on a 1.8kW, 5kHz experimental prototype.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.5
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• pp.11-116
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• 2000

A topology decreased switching loss and voltage stress by zero voltage switching is presented in this paper. Generally, Switching mode converting productes voltage stress and power losses due to excessive voltage and current. which affect to performance of power supply and reduce overall efficiency of equipments. Virtually, In flyback converter, transient peak voltage and current at switcher are generated by parasitic elements. To solve these problems, present ZVS flyback converter topology applied a auxiliary circuit. Incorporation of auxiliary circuit into a conventional flyback topology serves to reduce power losses and to minimize switching voltage stress. Snubber capacitor in auxiliary circuit serves ZVS state by control voltage variable time at turn on and off of main switch, then reduces voltage stress and power losses. The proposed converter has lossless switching in variable load condition with wide range. A detailed analysis of the circuit is presented and the operation procedure is illustrated. A (50W 100kHz prototype) ZVS flyback converter using a auxiliary circuit is built which shows an efficiency improvement as compared to a conventional hard switching flyback converter.

• Proceedings of the KIPE Conference
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• 1998.07a
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• pp.409-412
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• 1998

In this paper, an improved soft switching forward dc/dc converter is proposed. The proposed converter is constructed by using non-dissipate snubbers in parallel with the main switch and output diode of the conventional forward converter. Due to use of the non-dissipative snubbers, the proposed converter achieves zero-voltage switching for all switching devices and output diodes without switching losses. The complete operating principles and experimental results will be presented.

• Proceedings of the KIPE Conference
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• 1998.07a
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• pp.24-26
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• 1998

A new high frequency switching drive method using IGBT is proposed for non-magnetic induction heating system. Using this method, the switching and conduction losses of the switching devices can be reduced. In addition, since IGBT cosl is lower than MOS-FET one, the system cosl can be remarkably pared down. The prototype induction heating system with 1.2㎾ power consumption is builted and tested to verify the operation of the proposed high frequency switching drive method.

• Journal of Power Electronics
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• v.11 no.1
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• pp.16-20
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• 2011

This paper presents a zero-voltage-switching (ZVS) boost converter using a coupled inductor. It utilizes an additional winding to the boost inductor and an auxiliary diode. The ZVS characteristic of the proposed converter reduces the switching losses of the active power switches and raises the power conversion efficiency. The principle of operation and a system analysis are presented. The theoretical analysis and performance of the proposed converter were verified with a 100W experimental prototype operating at a 107 kHz switching frequency.

• The Transactions of the Korean Institute of Power Electronics
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• v.21 no.2
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• pp.117-125
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• 2016

In this paper, the inverter switch losses of BLDC motor for three types of PWM methods and power devices were analyzed. When the BLDC motor is driven at low currents, the inverter switch losses for MOSFET are low because MOSFET operates like resistance. However, the inverter switch losses for IGBT are higher than MOSFET due to its large turn-off losses. Moreover, synchronous rectification switching method is adaptable because MOSFET has 2-channel. So, MOSFET can be driven with more low impedance and losses. For low power inverter with MOSFET, the power losses of unified PWM are lower than that of unipolar and bipolar PWM. Proposed method and losses analysis results are verified by examination and simulation using Matlab/Simulink.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.31-35
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• 2001

IGCTs have established themselves as the power semiconductor of choice at medium voltage levels within the last few years because of their low conduction and switching losses. The trade-off between these losses can be adjusted by various lifetime control techniques and the growing demand for these devices is driving the need for standard types to cover such applications as Static Circuit Breakers (low on-state) and Medium Voltage Drives (low switching losses). The additional demands of Traction (low operating temperatures) and Current Source Inverters (symmetric blocking) would normally result in conflicting demands on the semiconductor. This paper will outline how a range of power devices can meet these needs with a limited number of wafers and gate units. Some of the key differences between IGCTs and IGBTs will be explained and the outlook for device improvements will be discussed.

• Journal of Power Electronics
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• v.17 no.1
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• pp.200-211
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• 2017

Conventional boost-full-bridge and boost-hybrid-bridge two-stage inverters are widely applied in order to adapt to the wide dc input voltage range of photovoltaic arrays. However, the efficiency of the conventional topology is not fully optimized because additional switching losses are generated in the voltage conversion so that the input voltage rises and then falls. Moreover, the electrolytic capacitors in a dc-link lead to a larger volume combined with increases in both weight and cost. This paper proposes a higher efficiency inverter with time-sharing synchronous modulation. The energy transmission paths, wheeling branches and switching losses for the high-frequency switches are optimized so that the overall efficiency is greatly improved. In this paper, a contrastive analysis of the component losses for the conventional and proposed inverter topologies is carried out in MATLAB. Finally, the high-efficiency under different switching frequencies and different input voltages is verified by a 3 kW prototype.

• Journal of Power Electronics
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• v.14 no.3
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• pp.531-540
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• 2014

A novel carrier-based PWM (CBPWM) strategy of a three-level NPC converter is proposed in this paper. The novel strategy can eliminate the low-frequency neutral point (NP) voltage oscillation under the entire modulation index and full power factor. The basic principle of the novel strategy is introduced. The internal modulation wave relationship between the novel CBPWM strategy and traditional SPWM strategy is also studied. All 64 modulation wave solutions of the CBPWM strategy are derived. Furthermore, the proposed CBPWM strategy is compared with traditional SPWM strategy regarding the output phase voltage THD characteristics, DC voltage utilization ratio, and device switching losses. Comparison results show that the proposed strategy does not cause NP voltage oscillation. As a result, no low-frequency harmonics occur on output line-to-line voltage and phase current. The novel strategy also has higher DC voltage utilization ratio (15.47% higher than that of SPWM strategy), whereas it causes larger device switching losses (4/3 times of SPWM strategy). The effectiveness of the proposed modulation strategy is verified by simulation and experiment results.