Proceedings of the KIPE Conference (전력전자학회:학술대회논문집)
- 2001.10a
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- Pages.31-35
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- 2001
Application Specific IGCTs
- Carroll Eric (ABB Semiconductors AG) ;
- Oedegrad Bjoern (ABB Semiconductors AG) ;
- Stiasny Thomas (ABB Semiconductors AG) ;
- Rossinelli Marco (ABB Semiconductors AG)
- Published : 2001.10.01
Abstract
IGCTs have established themselves as the power semiconductor of choice at medium voltage levels within the last few years because of their low conduction and switching losses. The trade-off between these losses can be adjusted by various lifetime control techniques and the growing demand for these devices is driving the need for standard types to cover such applications as Static Circuit Breakers (low on-state) and Medium Voltage Drives (low switching losses). The additional demands of Traction (low operating temperatures) and Current Source Inverters (symmetric blocking) would normally result in conflicting demands on the semiconductor. This paper will outline how a range of power devices can meet these needs with a limited number of wafers and gate units. Some of the key differences between IGCTs and IGBTs will be explained and the outlook for device improvements will be discussed.
Keywords