전력전자학회:학술대회논문집 (Proceedings of the KIPE Conference)

전력전자학회 (The Korean Institute of Power Electronics)
권호 표지

Design Consideration for Structure of 2500-4500V RC-GCT

  • Kim E. D. (Korea Electrotechnology Research Institute) ;
  • Kim S. C. (Korea Electrotechnology Research Institute) ;
  • Zhang C. L. (Korea Electrotechnology Research Institute) ;
  • Kim N. K. (Korea Electrotechnology Research Institute) ;
  • Bai J. B. (Xi'an Power Electronics Research Institute) ;
  • Li J. H. (Xi'an Power Electronics Research Institute) ;
  • Lu J. Q. (Xi'an Power Electronics Research Institute)
  • 발행 : 2001.10.01
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초록

A basic structure of 2500V-4500V reverse-conducting GCT (RC-GCT) is given in this paper. The punch-through type (PT) is adopted for narrow N-base with high resistivity so that the fast turn-off and low on-state voltage can be achieved. The photo mask design was made upon the both turn-off performance and solution of separation between GCT and integrated freewheeling diode (FWD) part. The turn-on and turn-off characteristics for reserve-conducting gate commutated thyristors (RC-GCTs) were investigated by ISE simulation. Additionally, the local carrier lifetime control by proton irradiation was adopted so as not only to obtain the reduction of turn-off losses of GCT but also to reach a soft reverse recovering characteristics of FWD

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