• Transactions on Electrical and Electronic Materials
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• 제16권5호
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• pp.290-292
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• 2015

We have reported about bipolar resistive switching effect on Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]:Graphene oxide composite films, which are sandwiched between aluminum and indium tin oxide electrodes. In this case, I-V sweep curve showed a hysteretic behavior, which varied according to the polarity of the applied voltage bias. The device exhibited excellent switching characteristics, with the ON/OFF ratio being approximately two orders in magnitude. The device had good endurance (10⁵ cycles without degradation) and long retention time (5 × 10³ s) at room temperature. The bistable switching behavior varied according to the trapping and de-trapping of charges on GO sites; the carrier transport was described using the space-charge-limited current (SCLC) model.

• 전력전자학회논문지
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• 제17권6호
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• pp.523-531
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• 2012

This paper proposes a high efficiency power conversion system for battery-ultracapacitor hybrid energy storages. The proposed system has only one bidirectional dc-dc converter for hybrid power source with batteries and ultracapacitors. The hybrid power source has bidirectional switching circuits for selecting one energy storage device. Bidirectional power flow between the energy storage device and high voltage capacitor can be controlled by one bidirectional converter. An asymmetrical switching method is applied to the bidirectional converter for high power efficiency. Switching power losses are reduced by zero-voltage switching of power switches. System operation and design considerations are presented. The experimental results are provided to verify the performance of the proposed system.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.212-214
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• 2001

This paper proposes a hi-directional current switch with snubber regeneration using Power MOSFETs and to use a loss-less snubber with switching device to perform soft-switching. It results in not only decreasing switching loss in the device drastically, but also improving input ac current waveform distortion. The computer simulation results show that the input current waveform and show the requirements necessary for the elimination of the 3rd harmonic component. We also show the Procedure to design the parameters of the converter.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 B
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• pp.1041-1043
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• 2005

It is expected to reduce stresses to components of high voltage circuit breaker and transferred switching surge from power system by applying controlled switching technique to high voltage system. This technique has already been applied to switch shunt reactor or capacitor bank in advanced countries. In this paper, operating software is installed in developed controlled switching device and HMI(Human-machine Interface) is under developing, In the future, this technique is expected to contribute to S.A(Substation Automation).

• 전력전자학회논문지
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• 제28권1호
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• pp.39-47
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• 2023

This paper applies a structural technique with uniform parallel switch characteristics in gates and power loops to minimize the ringing and current imbalance that occurs when a general discrete package (TO-247)-based power semiconductor device is operated in parallel. Also, this propose a heat sink integrated switching module with heat sink design flexibility and high power density. The developed heat dissipation-integrated switching module verifies the symmetry of the parasitic inductance of the parallel switch through Q3D by ansys and the validity of the structural technique of the parallel switch using the LLC resonant converter experiment operating at a rated capacity of 7.5 kW.

• 한국컴퓨터정보학회논문지
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• 제22권8호
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• pp.1-7
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• 2017

In this paper, we proposed the test equipment that can perform separate performance tests to mass-produce the Automatic Test Equipment. Until now, the performance test of the ATE has been performed after it has been assembled perfectly. It is possible to perform the performance test only when the external device manufacturing and setting of measurement resources and the internal wiring work have been completed. So we have been studying test equipment that separately tested the switching devices that played a key role in the performance of the ATE. To build the test equipment, we reviewed the circuit card assemblies that make up the switching devices. We designed a test equipment that satisfies the performance test and apply the completed test equipment to the actual production process to analyze whether it was effective in improving the time and workability of the performance test. The test equipment has the advantage that it can be used universally in the mass production process of ATE with the same type of switching device.

• 한국정밀공학회지
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• 제30권11호
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• pp.1187-1192
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• 2013

In the case of 4 wheel drive (4-WD) type car, power switching occurs to 4-WD by operating lever or switch that operates power switching device attached in transfer case which can operate motor by electric signal. So if the RPM of motor is high, power switching will not exactly occur and can cause damage to gear in transfer case according to circumstances. So in this study, we applied 2 level of planet gear type motor spindle of motor drive part of a power train. And conducted decelerating to increase torque to switch power safe and accurately. Also, we researched efficiency of gear by designing reduction gear ratio and gear type and by calculating contact stress and bending strength. Based on researched content, we made drive head of power switching device and a reduction module which uses type that uses motor spindle as sun gear and ring gear as cover.

• 한국전기전자재료학회논문지
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• 제27권8호
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• pp.491-496
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• 2014

The resistive switching characteristics of resistive random access memory (ReRAM) based on amorphous $Ge_{0.5}Se_{0.5}$ thin films have been demonstrated by using Ti/Ag nanocrystals/$Ge_{0.5}Se_{0.5}$/Pt structure. Ag nanocrystals (Ag NCs) were spread on the amorphous $Ge_{0.5}Se_{0.5}$ thin film and they played the role of metal ions source. As a result, comparing the conventional Ag/$Ge_{0.5}Se_{0.5}$/Pt structure, this Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt ReRAM device exhibits the highly uniform bipolar resistive switching (BRS) characteristics, such as the operating voltages, and the resistance values. At the same time, a stable DC endurance(> 100 cycles), and the excellent data retention (> $10^4$ sec) properties were found from the Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt structured ReRAM device.

• 센서학회지
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• 제32권2호
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• pp.100-104
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• 2023

In this study, a device was fabricated to check the possibility of a memory device by controlling the oxygen functional groups in graphene oxide formed with a 45-second exposure time. We discovered that graphene oxide can be formed using the ultraviolet (UV) light treatment method with different exposure times. Moreover, Raman spectroscopy measurement revealed that the oxygen functional groups can be moved by controlling the voltage. We further studied the change in the local graphene oxide region, which was found to be related to the modulation of the electrical properties of the device. Therefore, the fabricated graphene oxide device can be used as a wettability switching membrane and graphene-based ion transport device.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제53권9호
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• pp.576-583
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• 2004

This paper presents a buck circuit topology of high-frequency with a single switching device. It solved the problem which arised from hard-switching in high-frequency using a resonant snubber and operating under the principle of ZCS turn-on and ZVS turn-off commutation schemes. In the existing circuit, it has the voltage stress that is almost twice of input voltage in a free-wheeling diode. In the proposed circuit, it has the voltage stress that is lower than input voltage with modifing a location of free -wheeling diode. In this paper, it expained the circuit operation of each mode and analyzed feedback-loop stabilization. Also it confirmed the waveform of each mode with simulation result. The experiment result verified the simulation waveform and compared the voltage stress of a free -wheeling diode in the exsiting circuit with the voltage stress of that in the proposed circuit. Moreover, it compares and analyzes the proposed circuit's efficiency with the hard-switching circuit's efficiency according to the change of load current.