• 전력전자학회논문지
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• 제28권1호
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• pp.48-58
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• 2023

This paper presents the digital control techniques of a bidirectional CRM(critical-conduction mode) buck(boost) converter, a dead-time design method that optimizes ZVS(zero-voltage switching) and valley-switching operation, and a switching-frequency limitation that ensures stable converter operation. To verify the feasibility of the design, a Si-MOSFET-based bidirectional CRM buck(boost) converter is built with 260-430 V input, 160-240 V output, and 1.0 kW rated capacity. The bidirectional CRM converter achieves an efficiency of up to 99.6% at buck mode and 98.7% at boost mode under rated load conditions.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.368.1-368.1
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• 2014

We proposed amorphous GeSe-based ReRAM device of metal-insulator-metal (M-I-M) structure. The operation characteristics of memory device occured unipolar switching characteristics. By introducing the concepts of valance-alternation-pairs (VAPs) and chalcogen vacancies, the unipolar resistive switching operation had been explained. In addition, the current transport behavior were analyzed with space charge effect of VAPs, Schottky emission in metal/GeSe interface and P-F emission by GeSe bulk trap in mind. The GeSe ReRAM device of M-I-M structure indicated the stable memory switching characteristics. Furthermore, excellent stability, endurance and retention characteristics were also verified.

• 조명전기설비학회논문지
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• 제14권2호
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• pp.52-58
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• 2000

본 논문애서는 2단 스위치 구조를 가져는 역률 보상 회로를 적용하여 도통 손실을 저감할 수 있는 새로운 결합형 1단방식 AC/DC half-bridge 컨버터에 대한 토폴라지를 제안하고, 이에 관한 전류 불연속 모드 제어와 소프트 스위칭 특성에 대하여 연구하였다. 도통손실의 저감은 기존의 역률 보상 회로 대신 새로운 형태의 이단 스위치 구조를 가지는 역률 보상 회로를 적용함으로써 이루어친다. 제안된 토폴라지의 타당성 검증을 위해서 입력전압 100[V], 출력전압 50[V]의 500[W]급 컨버터에 대한 시뮬레이션 결과를 제시하고 분석하였다.

• 전자공학회논문지
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• 제50권8호
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• pp.151-161
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• 2013

본 논문에서는 입력전압을 감지하지 않는 전류연속/임계동작모드 active power factor correction(PFC) circuit을 제안하였다. 기존의 입력전압을 감지하지 않는 PFC circuit의 경우 출력전류가 낮은 경 부하 조건에서 DCM 동작을 수행하고, 이에 따라 PF가 감소하는 문제가 발생한다. 제안한 PFC circuit은 70KHz의 주파수로 CCM 동작을 수행하고, 경 부하 조건에서 최대 200KHz까지 스위칭 주파수가 가변되는 CRM 동작을 수행하도록 하였다. 이를 통해 경 부하 조건에서 PF가 감소하는 문제를 해결하였다. PFC controller IC는 $0.35{\mu}m$ BCDMOS 공정을 이용하여 제작하였으며, 240W급 PFC prototype을 제작하여 실험하였다. 제안한 PFC circuit은 기존의 PFC circcuit 대비 최대 10%의 역률이 향상되었고, IEC 61000-3-2 Class D 규격에 따른 경 부하 조건에서는 최대 4% 역률이 향상되었다.

• Journal of Power Electronics
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• 제15권3호
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• pp.685-694
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• 2015

The power loss of the controllable switches in modular multilevel converter (MMC) HVDC transmission systems is an important factor, which can determine the design of the operating junction temperatures. Due to the dc current component, the approximate calculation tool provided by the manufacturer of the switches cannot be used for the losses of the switches in the MMC. Based on the enabled probabilities of each SM in an arm, the current analytical models of the switches can be determined. The average and RMS currents can be obtained from the corresponding current analytical model. Then, the conduction losses can be calculated, and the switching losses of the switches can be estimated according to the upper limit of the switching frequency. Finally, the thermal resistance model of the switches can be utilized, and the junction temperatures can be estimated. A comparison between the calculation and PSCAD simulation results shows that the proposed method is effective for estimating the junction temperatures of the switches in the MMC.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 A
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• pp.388-391
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• 1996

The conventional high frequency phase-shifted full bridge DC-DC converter has a disadavantage that a circulating current flows through transformer and switching devices during the freewheeling interval Due to this circulating current, RMS current stress, conduction losses of transformer and switching devices are increased. To alleviate this problem, this study provides a novel circulating current free type high frequency soft switching phase-shifted full bridge DC-DC converter which applies the energy recovery snubber(ERS) attached at the secondary side of transformer. The ERS adopted in this study is consisted of three fast recovery diode($Ds_1$, $Ds_2$, $Ds_3$), two resonant capacitor($Cs_1$, $Cs_2$) and a small resonant inductor [(Lr) : It can be ignored because the transformer leakage inductance(Ll) is able to use in stead of inserting the resonant inductor(Lr)]

• 전력전자학회:학술대회논문집
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• 전력전자학회 2017년도 전력전자학술대회
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• pp.38-39
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• 2017

This paper proposes a new control method for an AC-DC Buck converter which is utilized as a front-end converter of a 2-stage high power density adapter. In the conventional adapter applications, 2-stage configuration shows higher power transfer efficiency and higher power density than those of the single stage flyback converter. In the 2-stage AC-DC converter, the boost converter is widely used as a front-end converter. However, an efficiency variation between high AC line and low AC line is large. On the other hand, the proposed conduction band control method for a buck front-end converter has an advantage of small efficiency variation. In the proposed control method, switching operation is determined by a band control voltage which represents output load condition, and an AC line voltage. If the output load increasesin low AC line, the switching operation range is expanded in half of line cycle. On the contrary, in light load and high line condition, the switching operation is narrowed. Thus, the proposed control method reduces switching loss under high AC line and light load condition. A 60W prototype which is configured the buck and LLC converter with the proposed control method is experimented on to verify the validity of the proposed system. The prototype shows 92.16% of AC-DC overall efficiency and 20.19 W/in 3 of power density.

• International journal of advanced smart convergence
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• 제9권2호
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• pp.105-113
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• 2020

In this paper, we proposed a soft switched synchronous boost converter, which can perform discharging the battery, is proposed. The proposed converter has low switching loss even at high frequency operation due to its soft switching characteristics. The converter operates in synchronous mode to minimize conduction loss because of changing the rectified diode to MOSFET with a low on resistance. In this reason, the efficiency of the converter can be greatly improved in high frequency. In this paper, the battery discharger with a switching frequency of 100 kHz, has been designed. The designed converter also simulated to prove the converter's characteristics of synchronous operation as well as soft switching operation. The simulation shows that the proposed converter always meets the soft switching conditions of turning on and off switching in the zero voltage and zero current states. Therefore, simulation results have confirmed that the proposed battery discharge had soft switching characteristics. The simulation results have confirmed that the proposed battery discharger had soft switching and synchronous operation characteristics.

• 한국위성정보통신학회논문지
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• 제9권3호
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• pp.86-90
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• 2014

DC-DC 컨버터는 인덕터 전류의 동작에 따라 연속전류모드와 불연속전류모드, 임계모드로 나눌 수 있다. 임계모드는 연속전류모드와 불연속전류모드의 경계에서 동작한다. DC-DC 컨버터를 임계모드에서 동작하도록 설계하면 인덕터 크기를 줄일 수 있으며 ZCS(Zero Current Switching) 동작을 하여 스위치와 다이오드의 전력 손실을 줄일 수 있다. 본 논문에서는 임계모드로 동작하는 부스트형 컨버터를 인공위성 용 태양전력 조절기에 적용한다. 임계모드 동작 시 DC-DC 컨버터의 입출력 조건에 따라 DC-DC 컨버터의 스위칭 주파수가 변한다. 최대 스위칭 주파수 제한을 위해 스위칭 주파수 제한 로직을 적용하였다. 한편, 임계모드 부스트형 태양전력 조절기는 소신호 전달함수가 간단하여 제어기 설계가 용이하다. 임계모드 부스트형 태양전력 조절기의 소신호 전달함수를 유도하고 이를 바탕으로 전압제어기를 설계하였다. 최종적으로 모의실험을 통해 임계모드로 동작하는 태양전력 조절기를 검증하였다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2017년도 전력전자학술대회
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• pp.577-595
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• 2017

${\bullet}$ Silicon Carbide (SiC) had excellent material properties as the base material for next generation of power semiconductor. In developing SiC MOSFET, gate oxide reliability issues had to be first overcome before commercial application. Besides, a high and stable gate-source voltage threshold $V_{GS(th)}$ is also an important parameter for operation robustness. SiC MOSFET with such characteristics can directly use existing high-speed IGBT gate driver IC's. ${\bullet}$ The linear voltage drop characteristics of SiC MOSFET will bring lower conduction loss averaged over full AC cycle compared to similarly rate IGBT. Lower switching loss enable higher switching frequency. Using package with auxiliary source terminal for gate driving will further reduce switching losses. Dynamic characteristics can fully controlled by simple gate resistors. ${\bullet}$ The low switching losses characteristics of SiC MOSFET can substantially reduce power losses in high switching frequency operation. Significant power loss reduction is also possible even at low switching frequency and low switching speed. in T-type 3-level topology, SiC MOSFET solution enable three times higher switching freqeuncy at same efficiency.