• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.3B no.1
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• pp.37-43
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• 2003

This paper proposes a soft-switching current source inverter for a photovoltaic power system. The proposed inverter has an H-type switched-capacitor module composed of two semiconductor switches, two diodes, and an LC resonant circuit. The operation of the proposed system was analyzed by a theoretical approach with equivalent circuits and was verified by computer simulations with SPICE and experimental implementation with a hardware prototype. The proposed system could be effectively applied for the power converter of photovoltaic power system interconnected with the AC power system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.120-124
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• 2000

In this paper, the effects of trap distribution on switching characteristis of a lateral insulated gate bipolar transistor (LIGBT) are investigated. The simulations are performed in order to to analyze the effect of the positon, width and concentration of trap distribution model with a reduced minority carrier lifetime using 2D device simulator MEDICI. The turn off time for the proposed LIGBT model A with the trap injection is 0.8$mutextrm{s}$. These results indicate the improvement of about 2 times compared with the conventional LIGBT. It is shown that the trap distribution model is very effective to reduce the turn-off time with a little increasing of on-state voltage drop.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.9 no.5
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• pp.72-79
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• 2010

In this paper, we describe the design and implementation of a high efficiency Doherty power amplifier using gallium nitride (GaN) high-electron mobility transistor (HEMT). The carrier and peaking amplifiers of the proposed Doherty power amplifier consist of the switching-mode Class-E power amplifiers. The test conditions are a duty of 10% and a pulse width of $100\;{\mu}s$ and pulse repetition frequency (PRF) of 1 kHz for a S-band radar application. A RF performance peak PAE of 64% with drain efficiency of 80.6%, at 6 dB output back-off point from saturated output power of 45.5 dBm, was obtained at 2.85 GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.66-79
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• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.595-596
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• 2006

The flexible organic thin film transistor (OTFT) array to use as a switching device for an organic light emitting diode (OLED) was designed and fabricated in the microcontact printing and low-temperature processes. The gate, source, and drain electrode patterns of OTFT were fabricated by microcontact printing which is high-resolution lithography technology using polydimethylsiloxane(PDMS) stamp. The OTFT array with dielectric layer and organic active semiconductor layers formed at room temperature or at a temperature tower than $40^{\circ}C$. The microcontact printing process using SAM(self-assembled monolayer) and PDMS stamp made it possible to fabricate OTFT arrays with channel lengths down to even nano size, and reduced the procedure by 10 steps compared with photolithography. Since the process was done in low temperature, there was no pattern transformation and bending problem appeared. It was possible to increase close packing of molecules by SAM, to improve electric field mobility, to decrease contact resistance, and to reduce threshold voltage by using a big dielecric.

• Journal of Power Electronics
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• v.15 no.3
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• pp.610-620
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• 2015

An inherent zero-voltage and zero-current-switching phase-shifted full-bridge converter with reverse-blocking insulated-gate bipolar transistor (IGBT) or non-punch-through IGBT is proposed in this paper. This converter not only ensures that the switches in the lagging leg works at zero-current switching, but also minimizes circulating conduction loss without any additional auxiliary circuits. A 1.2 kW hardware prototype is designed, fabricated, and tested to verify the proposed topology. The control loop design procedures with small-signal models are also presented. A simple, low-cost, and robust democratic current-sharing circuit is also introduced and verified in this study. The proposed converter is a suitable alternative for compact, cost-effective applications with high-voltage input.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.907-911
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• 2006

In this paper, we propose a new structure that improves the on-state voltage drop and switching speed in Insulated Gate Bipolar Transistors(IGBTs), which can be widely used in high voltage semiconductors. The proposed structure is unique in that the collector area is divided by $SiO_2$, whereas the conventional IGBT has a planar P+ collector structure. The process and device simulation results show remarkably improved on-state and switching characteristics. Also, the current and electric field distribution indicate that the segmented collector structure has increased electric field near the $SiO_2$ corner, which leads to an increase of electron current. This results in a decrease of on-state resistance and voltage drop to $30%{\sim}40%$. Also, since the area of the P+ region is decreased compared to existing structures, the hole injection decreases and leads to an increase of switching speed to 30 %. In spite of some complexity in process procedures, this structure can be manufactured with remarkably improved characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.400-403
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• 2016

The resistive memory switching characteristics of resistive random access memory (ReRAM) using the amorphous GeSe thin film have been demonstrated at Al/Ti/GeSe/$n^+$ poly Si structure. This ReRAM indicated bipolar resistive memory switching characteristics. The generation and the recombination of chalcogen cations and anions were suitable to explain the bipolar switching operation. Space charge limited current (SCLC) model and Poole-Frenkel emission is applied to explain the formation of conductive filament in the amorphous GeSe thin film. The results showed characteristics of stable switching and excellent reliability. Through the annealing condition of $400^{\circ}C$, the possibility of low temperature process was established. Very low operation current level (set current: ~ ${\mu}A$, reset current: ~ nA) was showed the possibility of low power consumption. Particularly, $n^+$ poly Si based GeSe ReRAM could be applied directly to thin film transistor (TFT).

• Journal of Power Electronics
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• v.15 no.2
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• pp.299-308
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• 2015

This study proposes four novel pulse width modulation (PWM) shoot-through control methods for impedance source (IS) galvanically isolated DC-DC converters. These methods are derived from a PWM control method with shifted shoot-through introduced by the authors in 2012. In contrast to the baseline solution, where the shoot-through states are generated by the simultaneous conduction of all transistors in the inverter bridge, our new approach is based on the shoot-through generation by one inverter leg. The idea is to increase the number of soft-switched transients and, therefore, decrease the dynamic losses of the front-end inverter. All the proposed approaches are experimentally verified through an insulated-gate bipolar transistor-based IS DC-DC converter. Conclusions are drawn in accordance with the results of the switching loss analysis.

• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.4
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• pp.259-267
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• 2019

An active clamp flyback (ACF) converter applies a clamp circuit and circulates the energy of leakage inductance to the input side, thereby achieving a zero-voltage switching (ZVS) operation and greatly reducing switching losses. The switching losses are further reduced by applying a gallium nitride field effect transistor (GaN-FET) with excellent switching characteristics, and ZVS operation can be accomplished under light load with boundary conduction mode (BCM) operation. Optimal design is performed on the basis of loss analysis by selecting magnetization inductance based on BCM operation and a clamp capacitor for loss reduction. Therefore, the size of the reactive element can be reduced through high-frequency operation, and a high-efficiency and high-power-density converter can be achieved. This study proposes an optimal design for a high-efficiency and high-power-density BCM ACF converter based on GaN-FETs and verifies it through experimental results of a 65 W-rated prototype.