• Proceedings of the KIEE Conference
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• 2002.06a
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• pp.38-40
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• 2002

In the case of conventional high frequency inverter, with damage of switch by surge voltage when switch gets into compulsion extinction by load accident and so on because reactor is connected by series to switch, or there was problem of conduction loss by reactor's resistivity component, Also, it has controversial point of that can not ignore conduction loss of switch in complete work kind action of soft switching. In this paper, as high frequency induction heating power supply, we propose half bridge type multi resonance soft switching high frequency inverter topology that can realize high amplitude operation of load current with controlling switch current by multiplex resonance, mitigating surge voltage when switch gets into compulsion extinction and to be complete operation of zero current switching by opposit parallel connected reactor to inverter switch. and do circuit analysis for choice of most suitable circuit parameter of circuit

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.3
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• pp.132-138
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• 2005

In this paper a DPDT(Double-Pole Double Through) switch with defected ground structure(DGS) is proposed. The equivalent circuit for the proposed switch structure is derived according to based on equivalent circuit of proposed DGS unit structure. The equivalent circuit parameters of DGS unit are extracted by using the circuit analysis method. The on/off operation of the proposed switch is obtained by varying the capacitance of the varactor diode at the defected ground plane. In the case of ON state, the insertion loss of the fabricated DPDT was shown under 1dB. And in OFF state, we found the rejection characteristic over 20dB at the designed frequency 2.45GHz. The experimental results show excellent insertion loss at on state and isolation at off state.

• The Journal of the Acoustical Society of Korea
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• v.38 no.2
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• pp.222-230
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• 2019

In this paper, the power of the energy harvesting circuit using the PVDF (Polyvinylidene fluoride) piezoelectric sensor transformed by vortex was analyzed. For power analysis, a general bridge diode rectifier circuit and a P-SSHI (Parallel Synchronized Switch Harvesting on Inductor) rectifier circuit with a switching circuit were used. The P-SSHI circuit is a circuit that incorporates a parallel synchronous switch circuit at the input of a general rectifier circuit to improve energy conversion efficiency. In this paper, the output power of general rectifier circuit and P-SSHI rectifier circuit is analyzed and verified through theory and experiment. It was confirmed that the efficiency was increased by 69 % through the experiment using the wind. In addition, a circuit for storing the harvested energy in the supercapacitor was implemented to confirm its applicability as a secondary battery.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.431-434
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• 2004

The design, simulation, modeling and measurement of a RF switch module for GSM applications were presented in this paper. switch module were simulated by ADS and constructed using a LTCC multi-layer switching circuit and integrated low pass filter, designed to operate in the GSM band. Insertion and return losses at 900 MHz of the low pass filters were designed to lower than 0.3 dB and higher than 12.7 dB respectively. The switch module constructed, contained 10 embedded passives and 3 surface mounted components integrated on $4.6{\times}4.8{\times}1.2$ m volume, 6-layer integrated circuit. The insertion loss of switch module at m MHz were around 11 dB.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.113-116
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• 2003

Confluence buffers and single flux quantum (SFQ) switches are essential components in constructing a high speed superconductive Arithmetic Logic Unit (ALU). In this work, we developed a SFQ confluence buffer and an SFQ switch. It is very important to optimize the circuit parameters of a confluence buffer and an SFQ switch to implement them into an ALU. The confluence buffer that we are currently using has a small bias margin of $\pm$11％. By optimizing it with a Josephson circuit simulator, we improved the design of confluence buffer. Our simulation study showed that we improved bias global margin of 10％ more than the existent confluence buffer. In simulations, the minimal bias margin was $\pm$33％. We also designed, fabricated, and tested an SFQ switch operating in a DC mode. The mask layout used to fabricate the SFQ switch was obtained after circuit optimization. The test results of our SFQ switch showed that it operated correctly and had a reasonably wide margin of $\pm$15％.

• The Transactions of the Korean Institute of Power Electronics
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• v.27 no.6
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• pp.489-497
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• 2022

This work investigates the commutation characteristics of the current flowing through an electrical-contact-type switch to the semiconductor switch branch during the breaking operation of hybrid DC switchgear. A simple, reliable, low-cost natural commutation method is proposed, and the current commutation characteristics are analyzed in accordance with the conduction voltage drop of the semiconductor switch branch through experiments. A prototype 400 V/10 A class natural commutation type hybrid DC switchgear is set up. Its performance is verified, and its characteristics are analyzed.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.123-126
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• 2003

RSFQ (Rapid Single Flux Quantum) circuits are used in many practical applications. RSFQ DFFC (Delay Flip-Flop with complementary outputs) circuits can be used in a RAM, an ALU (Arithmetic Logic Unit), a microprocessor, and many communication devices. A DFFC circuit has one input, one switch input, and two outputs (output l and output 2). DFFC circuit functions in such way that output 1 follows the input and output 2 is the complement of the input when the switch input is "0." However, when there is a switch input "1."the opposite output signals are generated. In this work, we have designed an RSFQ DFFC circuit based on 1 ㎄/$\textrm{cm}^2$ niobium trilayer technology. As circuit design tools, we used Xic, WRspice, and Lmeter After circuit optimization, we could obtain the bias current margins of the DFFC circuit to be above 32％.

• Journal of IKEEE
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• v.13 no.3
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• pp.1-6
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• 2009

In this paper, the external matching circuits were designed in order to compensate the efficiency which decreases by human body effect in the internal antenna phone. Comparing the two types of matching circuit, we selected the structure to minimize the switch stress. RF MEMS switch using low voltage was compared with FET switch and measured the performance in the handset. Here, the detection circuit which can couple th reflection power from antenna was added in the handset and we set up the demonstration system that can compensate the loss of hand effect automatically. In this system, when hand effect occurred, the radiation power increased 2.5dB by operation the matching circuit.

• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.3
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• pp.161-168
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• 2019

This study introduces a new topology to decrease the voltage stress experienced by a 13.56 MHz electrical variable capacitor (EVC) circuit with an asymmetrical switch structure applied to the impedance matching circuit of a radio frequency (RF) plasma system. The method adopts a symmetrical switch structure instead of an asymmetrical one in each of the capacitor's leg in the EVC circuit. The proposed topology successfully reduces voltage stress in the EVC circuit due to the symmetrical charging and discharging mode. This topology can also be applied to the impedance matching circuit of a high-power and high-frequency RF etching system. The target features of the proposed circuit topology are investigated via simulation and experiment. Voltage stress on the switch of the EVC circuit is successfully reduced by more than 40%.

• Journal of Computing Science and Engineering
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• v.8 no.3
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• pp.129-136
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• 2014

This paper presents the equivalent circuit modelling and eigenfrequency analysis of a wideband robust capacitive radio frequency (RF) microelectromechanical system (MEMS) switch that was designed using Poly-Si and Au layer membrane for highly reliable switching operation. The circuit characterization includes the extraction of resistance, inductance, on and off state capacitance, and Q-factor. The first six eigenfrequencies are analyzed using a finite element modeler, and the equivalent modes are demonstrated. The switch is optimized for millimeter wave frequencies, which indicate excellent RF performance with isolation of more than 55 dB and a low insertion loss of 0.1 dB in the V-band. The designed switch actuates at 13.2 V. The R, L, C and Q-factor are simulated using Y-matrix data over a frequency sweep of 20-100 GHz. The proposed switch has various applications in satellite communication networks and can also be used for devices that will incorporate the upcoming IEEE Wi-Fi 802.11ad protocol.