The Transactions of the Korean Institute of Power Electronics (전력전자학회논문지)

The Korean Institute of Power Electronics (전력전자학회)
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Electrical Variable Capacitor based on Symmetrical Switch Structure for RF Plasma System

대칭적인 스위치 구조 기반 RF 플라즈마 시스템 적용 전기적 가변 커패시터

  • Min, Juhwa (Dept. of Electrical Engineering, Smart Grid Research Center, Chonbuk Nat'l University) ;
  • Chae, Beomseok (Dept. of Electrical Engineering, Smart Grid Research Center, Chonbuk Nat'l University) ;
  • Kim, Hyunbae (Manufacturing Technology Center, Samsung Electronics) ;
  • Suh, Yongsug (Dept. of Electrical Engineering, Smart Grid Research Center, Chonbuk Nat'l University)
  • Received : 2018.10.08
  • Accepted : 2018.12.03
  • Published : 2019.06.20
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Abstract

This study introduces a new topology to decrease the voltage stress experienced by a 13.56 MHz electrical variable capacitor (EVC) circuit with an asymmetrical switch structure applied to the impedance matching circuit of a radio frequency (RF) plasma system. The method adopts a symmetrical switch structure instead of an asymmetrical one in each of the capacitor's leg in the EVC circuit. The proposed topology successfully reduces voltage stress in the EVC circuit due to the symmetrical charging and discharging mode. This topology can also be applied to the impedance matching circuit of a high-power and high-frequency RF etching system. The target features of the proposed circuit topology are investigated via simulation and experiment. Voltage stress on the switch of the EVC circuit is successfully reduced by more than 40%.

Keywords

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Fig. 1. Block diagram of RF plasma system.

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Fig. 7. Equivalent circuit of Dnn off and Dpn on during switch turn off – Mode 2. (left : conventional circuit, right : proposed circuit)

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Fig. 8. Equivalent circuit of Dnn off and Dpn off during switch turn off – Mode 3. (left : conventional circuit, right : proposed circuit)

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Fig. 11. Steady state analysis of EVC circuit using asymmetrical switch structure.

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Fig. 14. Vspn of EVC circuit using asymmetrical switch structure in simulation result [50V/div] [2us/div].

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Fig. 15. Vspn of EVC circuit using symmetrical switch structure in simulation result [50V/div] [2us/div].

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Fig. 18. Vspn of EVC circuit using asymmetrical switch structure in experiment result. (300W)

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Fig. 2. RF plasma circuit with EVC using multi leg asymmetrical switch structure.

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Fig. 3. Ideal case and real case of EVC circuit. (left : ideal case, right : real case)

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Fig. 4. RF plasma circuit with EVC using one leg asymmetrical switch structure.

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Fig. 5. Two types of EVC circuit. (left : conventional circuit, right : proposed circuit)

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Fig. 6. Equivalent circuit of switch turn on – Mode 1. (left : conventional circuit, right : proposed circuit)

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Fig. 9. Equivalent circuit of Dnn on and Dpn off during switch turn off – Mode 4. (left : conventional circuit, right : proposed circuit)

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Fig. 10. Transient analysis of EVC circuit using asymmetrical switch structure.

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Fig. 12. Transient analysis of EVC circuit using symmetrical switch structure.

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Fig. 13. Steady state analysis of EVC circuit using symmetrical switch structure.

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Fig. 16. Circuit configuration.

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Fig. 17. Hardware configuration.

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Fig. 19. Vspn and Vsnn of EVC circuit using symmetrical switch structure in experiment result. (300W)

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Fig. 20. Vspn of EVC circuit using asymmetrical switch structure in experiment result. (500W)

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Fig. 21. Vspn and Vsnn of EVC circuit using symmetrical switch structure in experiment result. (500W)

TABLE I CIRCUIT PARAMETERS OF SIMULATION

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