• Proceedings of the KWS Conference
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• 2005.11a
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• pp.262-264
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• 2005

$Bi_{2}Sr_{2}CaCu_{2}O_{x}$(Bi-2212) and $Bi_{2}Sr_{2}Ca_{2}Cu_{3}O_{y}$(Bi-2223) high-$T_{c}$ superconductor(HTS) coating have been prepared by plasma spraying and heaat treatment. The Bi-2212 HTS coating later is synthesized through the peritectic reaction between Sr-Ca-Cu oxide coating layer and Bi-Cu oxide coating later, and $Bi_{2}Sr_{2}CaCu_{2}O_{y}$(Bi-2212) superconducting phase grow by partial melting process. The superconducting characteristic depends strongly on the conditions of the partial melting process. the Bi-2212 HTS layer consists of the whiskers grown in the diffusion direction. Above the 2212 layer, Bi-2223 phase and secondary phase was observed. The secondary phase is distributed uniformly over the whole surface. This is caused to the microcrack on the coatings surface. Despite everything, the film shows superconducting with an onset $T_{c}$ of about 115K. There are two changes steps. One changes (1step) at 115K is due to the diamagnetism of the Bi-2223 phase and the other changes (2step) at 78K is due to the diamagnetism of the Bi-2212 phase.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1998.05a
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• pp.101-102
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• 1998

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.45-47
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• 2003

• Journal of Surface Science and Engineering
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• v.46 no.1
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• pp.16-21
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• 2013

CIGS (Cu-In-Ga-Se) films were deposited on the Mo coated soda lime glass (Mo/SLG) by RF magnetron sputtering using a single sintered target with different chemical compositions. Heat treatment of the CIGS films were carried out under three different conditions, 1step ($350^{\circ}C$ for 2 hour and $550^{\circ}C$ for 2 hour) and 2step ($350^{\circ}C$ for 1 hour and $550^{\circ}C$ for 1 hour). In the case of CIGS films post-annealed on 2step method, grain size remarkably increased compared to other methods, indicating that chemical composition [Cu/(Ga+In) = 1] of CIGS films was same as CIGS target. After heat treatment by 2step method, band gap energy of the CIGS film deposited at RF 80 W showed 1.4 eV which is broadly similar to identical band gap energy (1.2 eV) of CIGS film prepared by evaporation method. Therefore, 2step heat treatment method could be expected to low temperature process.

• Journal of the Korean Society of Safety
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• v.8 no.3
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• pp.56-63
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• 1993

In this study the ultrasound which has the properties of mixing, surface cleaning effect, increasing of the effective reaction surface area and increasing of the effective collision frequency, was used to enhance the recovering efficiency of Cu from the Cu-ion containning waste water. The ultrasonic reactor used in this study was dsigned and constructed for improving the disadvantage of the existing ultrasonic reactor From the experimental result and its analysis. we obtained following conclusions. 1. The ultrasound increased the rate of electrochemical deposition to 582.2% in maximum at the Condition of 0.1M-CuSO$_4$and 2.1V-overpotential. 2. This study gave the possibility of the scale-up of ultrasonic reactor and In particular, ultrasonic reactor would be effective in treatment of waste water contains a low concentration of Cu ion.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.203-207
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• 2009

Copper is known as a replacement for aluminum wire which is used for semiconductor. Because specific resistance of Cu ($1.67{\mu}{\Omega}$-cm) is lower than that of Al ($2.66{\mu}{\Omega}$-cm), Cu reduce RC delay time. Although melting point of Cu($1085^{\circ}C$) is higher than melting point of Al, Cu have characteristic to easily react with Silicon(Si) in low temperature, and it isn't good at adhesive strength with Si. For above these reason, research of diffusion barrier to prevent reaction between Cu and Si and to raise adhesive strength is steadily advanced. Our study group have researched on W-C-N (tungsten-carbon-nitrogen) Diffusion barrier for preventing diffusion of Cu through semiconductor. By recent studies, It's reported that W-C-N diffusion barrier can even precent Cu and Si diffusing effectively at high temperature. In this treatise, we vaporized different proportion of N into diffusion barrier to research Cu's Electromigration based on the results and studied surface hardness in the heat process using nano scale indentation system. We gain that diffusion barrier containing nitrogen is more stable for Cu's electromigration and has stronger surface hardness in heat treatment process.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.334-341
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• 2011

The mechanism behind super-filling of high-aspect-ratio features with Cu by catalyst-enhanced chemical vapor deposition (CECVD) coupled with plasma treatment is described and the metrology required to predict the filling feasibility is identified and quantified. The reaction probability of a Cu precursor was determined as a function of substrate temperature. Iodine adatoms are deactivated by the bombardment of energetic particles and also by the overdeposition of sputtered Cu atoms during the plasma treatment. The degree of deactivation of adsorbed iodine was experimentally quantified. The quantified factors, reaction probability and degree of deactivation of iodine were introduced to the simulation for the prediction of the trench filling aspect by CECVD coupled with plasma treatment. Simulated results show excellent agreement with the experimental filling aspects.

• Korean Journal of Materials Research
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• v.30 no.9
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• pp.465-473
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• 2020

For surface hardening of a continuous casting mold component, a fundamental metallurgical investigation on dissimilar laser clads (Cu-NiCrBSi) is performed. In particular, variation behavior of microstructures and mechanical properties (hardness and wear resistance) of dissimilar clads during long-term service is clarified by performing high-temperature post-clad heat treatment (temperature range: 500 ~ 1,000 ℃ and isothermal holding time: 20 ~ 500 min). The microstructures of clad metals (as-clads) consist of fine dendrite morphologies and severe microsegregations of the alloying elements (Cr and Si); substrate material (Cu) is clearly confirmed. During the post-clad heat treatment, the microsegregations are totally homogenized, and secondary phases (Cr-based borides and carbides) precipitated during the short-term heat treatment are also almost dissolved, especially at the heat treatment conditions of 950 ℃ for 500 min. Owing to these microstructural homogenization behaviors, an opposite tendency of the surface mechanical properties can be confirmed. In other words, the wear resistance (wear rate) improves from 4.1 × 10^-2 ㎣/Nm (as-clad condition) to 1.4 × 10^-2 ㎣/Nm (heat-treated at 950 ℃ for 500 min), whereas the hardness decreases from 453 HV (as-clad condition) to 142 HV (heat-treated at 950 ℃ for 500 min).

• Journal of Surface Science and Engineering
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• v.26 no.2
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• pp.71-81
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• 1993

Thed effects of Ar or Oxygen RF plasma treatment on the adhesion behavior of Cr films to polyimide sub-strates have been investigated by using SEM, XRD, AES, and $90^{\circ}$peel test. By applying RF plasma treatment of the polyimide surface prior to metal deposition, the peel adhesion strength of Cu/Cr films sputtered onto the fully cured BPDA-PDA polyimide was highly increased from about 3g/mm to 90 ~ 100g/mm. Improved peel adhesion strength of Cr/polyimide interfaces due to RF plasma treatment was attributed to the contributions from surface cleaning, Cr-polyimide bonding at the interface, and force required for plastic deformation of the film. While the surface topology change of the polyimide caused by RF plasma treatment makes a little contri-bution to the improved adhesion.

• Korean Journal of Materials Research
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• v.25 no.11
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• pp.622-629
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• 2015

Cu circuits were successfully fabricated on flexible PET(polyethylene terephthalate) substrates using wettability difference and electroless plating without an etching process. The wettability of Cu plating solution on PET was controlled by oxygen plasma treatment and $SiO_x$-DLC(silicon oxide containing diamond like carbon) coating by HMDSO(hexamethyldisiloxane) plasma. With an increase of the height of the nanostructures on the PET surface with the oxygen plasma treatment time, the wettability difference between the hydrophilicity and hydrophobicity increased, which allowed the etchless formation of a Cu pattern with high peel strength by selective Cu plating. When the height of the nanostructure was more than 1400 nm (60 min oxygen plasma treatment), the reduction of the critical impalement pressure with the decreasing density of the nanostructure caused the precipitation of copper in the hydrophobic region.