• Restorative Dentistry and Endodontics
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• 제20권2호
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• pp.549-576
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• 1995

Bacteria are one of the most important causative agents of the pulpal and periapical diseases. Streptococci are one of the most frequently isolated facultative anarerobic bacteria in the infected root canals. Bacterial cell wall components have a direct effect in the pathogenesis of the pulpal and periapical infections. Hyaluronidase produced by bacteria has been implicated in dissemination of the diseases. The purpose of this study was to evaluate the effect of cell wall extract of streptococci on the L929 cells using inverted microscope and the transmission electron microscopy (TEM). Hyaluronidase production of streptococcal strains were investigated to determine the correlation between the severity of cell damage and the activity of enzymes. Bacterial cell wall extracts of S. sanguis, S. mitis and S. uberis isolated from infected root canals and ATCC type strains of S. mutans (ATCC 10449) and E. faecalis (ATCC 19433) were prepared by sonication and confirmed with SDS-PAGE. Silver stain of SDS-PAGE of sonic extract was efficient at $100{\mu}g$/ml concentration of cell wall protein, while Coomasie blue stain was efficient at $100{\mu}g$/ml concentration. Inverted microscope showed that sonic extract-treated L929 cells were round and detached from the substratum while others lost their fibroblastic shapes. Transmission electron microscopic examination revealed that streptococcal extracts induced death of L929 cells. Sonic extracts of streptococci had variable effect on microstructure of L929 cells. significant chromatin condensation was observed in the nucleus of the cells. Disappearance of cell surface microvilli and nuclear fragments with dense chromatin were observed. The cell nucleus had an irregular shape and numerous large vacuoles were seen in the cytoplasm and some breaks of the cell membrane could be seen. Cell organelles were in various stages of destruction and cristae of mitochondria were disoriented or disappeared. Eighteen strains of streptococci did not produce hyaluronidase.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.207-210
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• 2005

In order to investigate the influence of the homo buffer layer on the microstructure of the ZnO thin film, undoped ZnO buffer layer were deposited on sapphire (0001) substrates by ultra high vaccum pulsed laser deposition (UHV-PLD) and molecular beam eiptaxy (MBE). After high temperature annealing at $600^{\circ}C$ for 30min, undoped ZnO buffer layer was deposited with various oxygen pressure (35~350mtorr). On the grown layer of undoped ZnO, Arsenic-doped(l, 3wt%) ZnO layers were deposited by UHV-PLD. The optical property of the ZnO was analyzed by the photoluminescence (PL) measurement. From $\Theta-2\Theta$ XRD analysis, all the films showed strong (0002) diffraction peak, and this indicates that the grains grew uniformly with the c-axis perpendicular to the substrate surface. Field emission scanning electron microscope (FE-SEM) revealed that microstructures of the ZnO were varied with oxygen pressure, arsenic doping level, and the deposition method of undoped ZnO buffer layers. The films became denser and smoother in the cases of introducing MBE-buffer layer and lower oxygen pressure during As-doped ZnO deposition. Higher As-doping concentration enhanced the columnar-character of the films.

• 한국진공학회지
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• 제4권S2호
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• pp.100-105
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• 1995

Nitrogen implantation process has been applied for improvement of wear resistance of Zircaloy-4 fuel cladding materials. Nitrogen was implanted at 120keV to a total dose range of $1\times 10^{17}$ions/$\textrm{cm}^2$ to $1\times 10^{18}$ions/$\textrm{cm}^2$ at various temperatures between $270^{\circ}C$ and $671^{\circ}C$. The microstructure changes by nitrogen implantation were analyzed by XRD and AES and wear behavior was evaluated by performing ball-on-disc type wear testing at various loads and sliding velocities under unlubricated condition. Nitrogen implantation produced ZrNx nitride above $3\times 10^{17}$ions/$\textrm{cm}^2$ as well as heavy dislocations, which resluted in an increase in microhardness of the implanted surface of up to 1400 $H_k$ from 200 $H_k$ of unimplanted substrate. Hardness was also found to be increased with increasing implantation temperature up to 1760 $H_k$ at $620^{\circ}C$. The wear resistance was greatly improved as total ion dose and implantation temperature increased. The effective enhancement of wear resistance at high dose and temperature is believed to be due to the significant hardening associated with high degree of precipitation of Zr nitrides and generation of prismatic dislocation loops.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.174-174
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• 2010

Gallium Nitride(GaN) attracts great attention due to their wide band gap energy (3.4eV), high thermal stability to the solid state lighting devices like LED, Laser diode, UV photo detector, spintronic devices, solar cells, sensors etc. Recently, researchers are interested in synthesis of polycrystalline and amorphous GaN which has also attracted towards optoelectronic device applications significantly. One of the alternatives to deposit GaN at low temperature is to use Single Source Molecular Percursor (SSP) which provides preformed Ga-N bonding. Moreover, our group succeeds in hybridization of SSP synthesized GaN with Single wall carbon nanotube which could be applicable in field emitting devices, hybrid LEDs and sensors. In this work, the GaN thin films were deposited on c-axis oriented sapphire substrate by MBE (Molecular Beam Epitaxy) using novel single source precursor of dimethyl gallium azido-tert-butylamine($Me_2Ga(N_3)NH_2C(CH_3)_3$) with additional source of ammonia. The surface morphology, structural and optical properties of GaN thin films were analyzed for the deposition in the temperature range of $600^{\circ}C$ to $750^{\circ}C$. Electrical properties of deposited thin films were carried out by four point probe technique and home made Hall effect measurement. The effect of ammonia on the crystallinity, microstructure and optical properties of as-deposited thin films are discussed briefly. The crystalline quality of GaN thin film was improved with substrate temperature as indicated by XRD rocking curve measurement. Photoluminescence measurement shows broad emission around 350nm-650nm which could be related to impurities or defects.

• Journal of Welding and Joining
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• 제23권6호
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• pp.99-105
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• 2005

The mixing ratio effect of the GTD-111(base metal) powder and the GNI-3 (Ni-l4Cr-9.5Co-3.5Al-2.5B) powder on TLP(Transient Liquid Phase) bonding phenomena and mechanism was investigated. At the mixing ratio of the base metal powder under $50wt\%$, the base metal powders fully melted at the initial time and a large amount of the base metal near the bonded interlayer was dissolved by liquid inter metal. Liquid insert metal was eliminated by isothermal solidification which was controlled by the diffusion of B into the base metal. The solid phases in the bonded interlayer grew epitaxially from the base metal near the bonded interlayer inward the insert metal during the isothermal solidification. The number of grain boundaries farmed at the bonded interlayer corresponded with those of base metal. At the mixing ratio above $60wt\%$, the base metal powder melted only at the surface of the powder and the amount of the base metal dissolution was also less at the initial time. Nuclear of solids firmed not only from the base metal near the bonded interlayer but also from the remained base metal powder in the bonded interlayer. Finally, the polycrystal in the bonded interlayer was formed when the isothermal solidification finished. When the isothermal solidification was finished, the contents of the elements in the boned interlayer were approximately equal to those of the base metal. Cr-W borides and Cr-W-Ta-Ti borides formed in the base metal near the bonded interlayer. And these borides decreased with the increasing of holding time.

• Journal of Welding and Joining
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• 제25권4호
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• pp.28-34
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• 2007

The heating unit of direct heating method manufactured as the plasma spray coating of $TiO_2/NiCr$ conductive heating material on the surface of heating unit in order to improve the disadvantages of indirect heating method. $TiO_2$ and NiCr (80wt.%Ni-20wt.%Cr) that had the properties of conduction and heating was chosen for the conductive heating material. The compositions of the composite powders were studied $TiO_2-30wt.%NiCr\;and\;TiO_2-10wt.%NiCr$. As the heating temperature was increased, the hardness of heating layer was increased because of the fine microstructure and the decrease of porosity. The adhesion strength was decreased for coarsening and connection of voids in the insulation layer, and the electrical resistivity of heating layer was increased for fine crack formation and growth. In this study, the best efficient sprayed coatings with heating unit was concluded as the plasma sprayed $TiO_2-10wt.%NiCr$ coatings that was heat treated at $300^{\circ}C$.

• 대한기계학회논문집A
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• 제26권10호
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• pp.2187-2193
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• 2002

We present a novel method for 3D microfabrication with LIGA process that utilizes a deep X-ray mask in which a micro-actuator is integrated. The integrated micro-actuator oscillates the X-ray absorber, which is formed on the shuttle mass of the micro-actuator, during X-ray exposures to modify the absorbed dose profile in X-ray resist, typically PMMA. 3D PMMA microstructures according to the modulated dose contour are revealed after GG development. An X-ray mask with integrated comb drive actuator is fabricated using deep reactive ion etching, absorber electroplating, and bulk micromachining with silicon-on-insulator (SOI) wafer. 1mm $\times$ 1 mm, 20 $\mu$m thick silicon shuttle mass as a mask blank is supported by four 1 mm long suspension beams and is driven by the comb electrodes. A 10 $\mu$m thick, 50 $\mu$m line and spaced gold absorber pattern is electroplated on the shuttle mass before the release step. The fundamental frequency and amplitude are around 3.6 kHz and 20 $\mu$m, respectively, for a do bias of 100 V and an ac bias of 20 $V_{p-p}$ (peak-peak). Fabricated PMMA microstructure shows 15.4 $\mu$m deep, S-shaped cross section in the case of 1.6 kJ $cm^{-3}$ surface dose and GG development at 35$^{\circ}C$ for 40 minutes.

• 대한금속재료학회지
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• 제48권11호
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• pp.995-1002
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• 2010

This study investigated the effect of process temperature on the alloying process during synthesis of $Sm_2Fe_{17}$ powder from ball-milled samarium oxide ($Sm_2O_3$) powders and a solid reducing agent of calcium hydrides ($CaH_2$) using iron nanopowder (n-Fe powder) by a reduction-diffusion (R-D) process. The $n-Fe-Sm_2O_3-CaH_2$ mixed powders were subjected to heat treatment at $850{\sim}1100^{\circ}C$ in $Ar-H_2$ for 5 h. It was found that the iron nanopowders in the mixed powders are sintered below $850^{\circ}C$ during the R-D process and the $SmH_2$ is synthesized by a reduced Sm that combines with $H_2$ around $850^{\circ}C$. The results showed that $SmH_2$ is able to separate Sm and $H_2$ respectively depending on an increase in process temperature, and the formed $Sm_2Fe_{17}$ phase on the surface of the sintered Fe nanopowder agglomerated at temperatures of $950{\sim}1100^{\circ}C$ in this study. The formation of the $Sm_2Fe_{17}$ layer is mainly due to the diffusion reaction of Sm atoms into the sintered Fe nanopowder, which agglomerates above $950^{\circ}C$. We concluded that nanoscale $Sm_2Fe_{17}$ powder can be synthesized by controlling the diffusion depth using well-dispersed Fe nanopowders.

• 대한금속재료학회지
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• 제48권8호
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• pp.757-764
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• 2010

We report on the effect of additives on the microstructure and corrosion properties of electrodeposited Cu films. Copper films were fabricated by electrodeposition on various concentrations of gelatin in a copper sulfate electrolyte. The surface morphologies of the Cu films were observed using a scanning electron microscope (SEM), and crystal orientation of the Cu films was analyzed by X-ray diffraction measurement. (220) plane was the dominant orientation when the films were fabricated at ambient temperature, decreasing in dominance with addition of gelatin. On the other hand, (111) plane-Cu films were preferentially grown at $40^{\circ}C$, and were also diminished with adding additives. Corrosion rate measurements using the Tafel extrapolation method based on corrosion potential and current reveal the effect of additives on corrosion behavior. Corrosion behavior was found to be strongly related to the orientation of the films. Consequently, additives like gelatin influence crystal orientation of the films, and if a less dense crystal plane, e.g. (220), is preferentially oriented during electrodeposition, a lower corrosion rate could be produced, since the plane shows a lower current density.

• 대한금속재료학회지
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• 제50권2호
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• pp.107-115
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• 2012

Direct laser melting (DLM) is a powder-based additive manufacturing process to produce parts by layer-by-layer laser melting. As the properties of the manufactured parts depend strongly on the deposited laser-melted bead, deposited layers obtained by the DLM process were characterized in this study. This investigation used a 200 W fiber laser to produce single-line beads under a variety of different energy distributions. In order to obtain a feasible range for the two main process parameters (i.e. laser power and scan rate), bead shapes of single track deposition were intensively investigated. The effects of the processing parameters, such as powder layer thickness and scan spacing, on geometries of the deposited layers have also been analyzed. As a result, minimum energy criteria that can achieve a complete melting have been suggested at the given powder layer thickness. The surface roughnesses of the deposited beads were strongly dependent on the overlap ratio of adjacent beads and on the energy distributions of laser power. Through microstructural analysis and hardness measurement, the morphological and mechanical properties of the deposited layers at various overlapped beads have also been characterized.