• Title/Summary/Keyword: Surface leakage

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A Study on the Development of Early Acetone Gas Detection to Prevent the Acetone Leakage Accident (아세톤 누출사고 예방을 위한 아세톤 가스 조기감지 기술개발에 관한 연구)

  • Seung Jin Jeon;Youngbo Choi
    • Journal of the Korean Society of Safety
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    • v.38 no.2
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    • pp.30-35
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    • 2023
  • Acetone is a widely used Volatile Organic Compound (VOC) in industries and laboratories. However, acetone affects human health adversely and causes fires and explosions. Early acetone detection and improved personnel training in safety and emergency management are necessary to prevent acetone-related accidents. The multi-VOC acetone detectors used currently have a sensitivity and selectivity limit. In this study, we discovered that Pt-loaded iron oxide (a metal oxide semiconductor) conversely, has high detection and selectivity for very low-levels of acetone gas. The loaded Pt catalyzes the reaction between the sensing materials' surface and the oxygen molecules in the air; this optimizes acetone detection and can decrease acetone-related illnesses, fires and explosions.

Effectiveness of parylene coating on CdZnTe surface after optimal passivation

  • B. Park;Y. Kim;J. Seo;K. Kim
    • Nuclear Engineering and Technology
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    • v.54 no.12
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    • pp.4693-4697
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    • 2022
  • Parylene coating was adopted on CdZnTe (CZT) detector as a mechanical protection layer after wet passivation with hydrogen peroxide (H2O2) and ammonium fluoride (NH4F). Wet chemical passivant lose their effectiveness when exposed to the ambient conditions for a long time. Parylene coating could protect the effectiveness of passivation, by mechanically blocking the exposure to the ambient conditions. Stability of CZT detector was tested with the measurement of leakage current density and response to radio-isotopes. When the enough thickness of parylene (>100 ㎛) is adopted, parylene is a promising protection layer thereby ensuring the performance and long-term stability of CZT detectors.

Prediction of the Environmental Conditions in Underground Tunnelling Spaces (地下터널 굴착作業場內 作業環境豫測)

  • Park, Hee-Bong
    • Tunnel and Underground Space
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    • v.2 no.1
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    • pp.116-122
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    • 1992
  • A comprehensive, nonsteady state, computer simulation program for the environmental conditions in advancing tunnels (the HEADSIM simulation program) is constructed and successfully validated with heat balance amongst all heat sources, and with mass conservation amongst various airflows including the leakage air from ducts, under timedependent variations of inlet air conditions. which include sudden, diurnal and seasonal changes. Heat conduction in the wall strata and face strata is simulated with most complicated boundary conditions using the finite difference method, and the climatic conditions in roadway sections which contain air ducts, booster fan, spray cooler, compressed air pipes, cold water pipes, return water pipes, machinery and broken rock are simulated taking into account the variations of face operation and the heat storage mechanism in the strata. The limitations of simulation time steps and roadway section lengths are defined according to the stability criteria satisfying the principles of thermodynamics. Variations of heat transfer coefficients, which are newly set, and those of wetness factors are taken into account according to the variations of other parameters and the stepwise advance of the face. Newly-derived formulae are used for computing the air duct leakage and the pressure inside of the duct. A new concept of an 'imaginary duct' is introduced to simulate the climatic conditions in tunnels during holiday periods, which directly affect conditions on subsequent working days under the consideration of natural convection. A subsidiary program (the WALLSIM simulation program) is made to compute the dimensionless tunnel surface temperatures and to compare the results with those from analytical approaches, and to demonstrate the stability, convergence and accuracy of the strata heat conduction simulation, adopting the finite difference method. The WALLSIM also has wide applications, including those for the computation of age coefficients.

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Microstructures and Electrical Properties of Zr Modified $({Ba_{1-x}},{Sr_x})TiO_3$ Thin Films (Zr이 첨가된 $({Ba_{1-x}},{Sr_x})TiO_3$ 박막의 미세구조와 전기적 성질)

  • Park, Sang-Sik
    • Korean Journal of Materials Research
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    • v.10 no.9
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    • pp.607-611
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    • 2000
  • Zr modified $(Ba_{1-x},Sr_x)TiO_3$ thin films as capacitor for high density DRAM were deposited by r.f. magnetron sputtering. The films deposited at various chamber pressure exhibited a polycrystalline structure. The Zr/Ti ratio of the films increased significantly with decreasing the chamber pressure and this variation affected the microstructure and surface roughness of films When chamber pressure increased dielectric constant of the films effected due to decrease of Zr. The thin films prepared in this study show dielectric constant of 380 to 525 at 100KHz. The variation of capacitance and polarization measured as a function of bias voltage suggested that all films were paraelectric phases. Leakage current exhibited smaller value as chamber pressure decrease and the leakage current density of the films deposited above 10mTorr was $10^{-7}~10^{-8}A/cm^2$ order at 200kV/cm. $(Ba_{1-x},Sr_x)(Ti_{1-y},Zr_y)O_3$ thin films in this study appeared to be potential thin film capacitor for high density DRAM.

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Stability Evaluation of Series and Parallel Varistor Combination Using Thermal Image Analysis (열화상 분석을 통한 바리스터의 직렬과 병렬 조합의 안전성 평가)

  • Eom, Ju-Hong;Cho, Sung-Chul;Lee, Tae-Hyung;Han, Hoo-Sek
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.20 no.8
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    • pp.22-29
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    • 2006
  • According to the recent revision of KS on the basis of the IEC, equipotential grounding systems has been come into focus and the use of surge protective devices(SPD) has been increased radically in order to operate the power system stably. $Z_nO$ varistor with non-linear resistance, which has an outstanding voltage-current(V-I) characteristic, is mainly used in power system to limit surge voltage and divert surge current. $Z_nO$ varistors are packaged several types based on the circuit assembly to be connected to a.c. power line. When the user assemble the $Z_nO$ varistors into parallel or series circuit package, there are my things to be taken into consideration including functions and thermal stability because they are directly related to the safety. We compare stabilities of each assembly type by measuring residual voltage, discharge current, leakage current and surface temperature concerned to the protection performances between a single device with a 40[kA] of current capacity and parallel or series circuits type of varistor package.

Investigation of Vanadium-based Thin Interlayer for Cu Diffusion Barrier

  • Han, Dong-Seok;Park, Jong-Wan;Mun, Dae-Yong;Park, Jae-Hyeong;Mun, Yeon-Geon;Kim, Ung-Seon;Sin, Sae-Yeong
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.41.2-41.2
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    • 2011
  • Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Metal Oxide Semiconductor) based electronic devices become much faster speed and smaller size than ever before. However, very narrow interconnect line width causes some drawbacks. For example, deposition of conformal and thin barrier is not easy moreover metallization process needs deposition of diffusion barrier and glue layer. Therefore, there is not enough space for copper filling process. In order to overcome these negative effects, simple process of copper metallization is required. In this research, Cu-V thin alloy film was formed by using RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane $SiO_2$/Si bi-layer substrate with smooth and uniform surface. Cu-V film thickness was about 50 nm. Cu-V layer was deposited at RT, 100, 150, 200, and $250^{\circ}C$. XRD, AFM, Hall measurement system, and XPS were used to analyze Cu-V thin film. For the barrier formation, Cu-V film was annealed at 200, 300, 400, 500, and $600^{\circ}C$ (1 hour). As a result, V-based thin interlayer between Cu-V film and $SiO_2$ dielectric layer was formed by itself with annealing. Thin interlayer was confirmed by TEM (Transmission Electron Microscope) analysis. Barrier thermal stability was tested with I-V (for measuring leakage current) and XRD analysis after 300, 400, 500, 600, and $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However V-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Thus, thermal stability of vanadium-based thin interlayer as diffusion barrier is good for copper interconnection.

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Formation and Characterization of Polyvinyl Series Organic Insulating Layers (폴리비닐 계열 유기절연막 형성과 특성평가)

  • Jang Ji-Geun;Jeong Jin-Cheol;Shin Se-Jin;Kim Hee-Won;Kang Eui-Jung;Ahn Jong-Myong;Seo Dong-Gyun;Lim Yong-Gyu;Kim Min-Young
    • Journal of the Semiconductor & Display Technology
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    • v.5 no.1 s.14
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    • pp.39-43
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    • 2006
  • The polyvinyl series organic films as gate insulators of thin film transistor(TFT) have been processed and characterized on the polyether sulphone (PES) substrates . The poly-4-vinyl phenol(PVP) and polyvinyl toluene (PVT) were used as solutes and propylene glycol monomethyl ether acetate(PGMEA) as a solvent in the formation of organic insulators. The cross-linking of organic insulators was also attempted by adding the thermosetting material, poly (melamine-co-formaldehyde) as a hardener in the compound. The electrical characteristics measured in the metal-insulator-metal (MIM) structures showed that insulating properties of PVP layers were generally superior to those of PVT layers. Among the layers of PVP series; copolymer PVP(10 wt%), 5wt% cross-linked PVP(10 wt%), copolymer PVP(20 wt%), 5 wt% cross-linked PVP(20 wt%) and 10 wt% cross-linked PVP(20 wt%), the 10 wt% cross-linked PVP(20 wt%) layer showed the lowest leakage current of 1.2 pA at ${\pm}10V$. The ms value of surface roughness and the capcitance per unit area are 2.41 and $1.76nF/cm^2$ in the case of 10 wt% cross-linked PVP(20 wt%) layer, respectively.

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Neobladder-vaginal Fistula Repair with Modified Martius Bulbocavernosus Fat Pad Flap (변형 Martius 구해면체 지방피판술을 이용한 신생방광-질루의 치험례)

  • Myung, Yu-Jin;Park, Ji-Ung;Jeong, Eui-Cheol;Kim, Suk-Wha
    • Archives of Plastic Surgery
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    • v.38 no.3
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    • pp.329-332
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    • 2011
  • Purpose: In developed countries, vesicovaginal fistula occur from various pelvic operations including total hysterectomy, leading to urinary leakage and incontinence. Although various methods have been proposed for adequate tissue coverage in fistula repair, the surgical treatment of is not simple and still controversial. We report a case of neobladder-vaginal fistula repair using modified Martius fat pad flap. Methods: A 62-year-old female patient underwent radical cystectomy with total abdominal hysterectomy and neobladder formation due to invasive bladder tumor 5 years ago. For 3 years following the operation, urine leakage was observed. Exploration demonstrated neobladder-vaginal fistula and primary repair including fistulectomy and direct closure was performed. Urinary incontinence relapsed 2 years after primary repair, and after demonstrating the recurrence of fistula on urography, repair of recurrent fistula was performed. After dissection of vagina and neobladder and closure of fistula by urologic surgeon, fibroadipose flap was elevated, rotated and advanced through the tunnel at vaginal sidewall, and interpositioned to the fistula site between neobladder and vagina. Results: There was no acute complication after the surgery and urethral catheter was extracted on the 8th day after the operation. During six month follow-up period after the operation, there is no clinical evidence of fistula recurrence. Conclusion: From our clinical experience and literature review, we think Martius fat pad flap is a useful technique in management of neobladder-vaginal fistula, for it provides enough vascularity, major epithelization surface and better lymphatic drainage, and also prevents overlapping of vesical, vaginal suture lines at the same time.

Preparation and Electrical Properties of $(Ba_{1-x},\;Sr_x)TiO_3$ Thin Film by Metal-Organic Chemical Vapor Deposition (유기 금속 화학 증착법에 의한 $(Ba_{1-x},\;Sr_x)TiO_3$ 박막의 제조 및 전기적 특성)

  • Yun, Jong-Guk;Yun, Sun-Gil
    • Korean Journal of Materials Research
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    • v.5 no.7
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    • pp.816-819
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    • 1995
  • (Ba$_{1-x}$ , Sr$_{x}$)TiO/$_3$thin films on Pt/Ti/SiO$_2$/Si substrates were prepared by LP MOCVD(Low Pressure Metal-Organic Chemical Vapor Deposition). The crystalinity of BST deposit had a (100) preferred orientation with increasing deposition temperature due to surface diffusion. BST films deposited at 90$0^{\circ}C$ showed a dielectric constant of 365 and a dissipation factor of 0.052 at a frequency of 100kHz. The chance of capacitance of the films with applied voltage was small, showing paraelectric properties. BST film deposited at 90$0^{\circ}C$ had a charge storage density of 60 fc/${\mu}{\textrm}{m}$$^2$at a field of 0.2MV/cm and the leakage current density of 20 nA/$\textrm{cm}^2$ at a field of 0.15 MV/cm.cm.

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Regional Groundwater Flow Characteristics due to the Subway System in Seoul, Korea (지하철에 의한 서울특별시 광역 지하수 유동 특성)

  • Shin, Esther;Kim, Hyoung-Soo;Ha, Kyoochul;Yoon, Heesung;Lee, Eunhee
    • Journal of Soil and Groundwater Environment
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    • v.20 no.3
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    • pp.41-50
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    • 2015
  • Hydrogeologic environment of the Mega City such as Seoul, suffers from rapid changes caused by urbanization, construction of underground subway or buildings, and contaminant loading by diverse anthropogenic activities. Understanding the present condition of groundwater environment and water budget is necessary to prevent natural and manmade disasters and to prepare for sustainable water resource management of urban environment. In this study, regional groundwater flow and water budget status of Seoul was analyzed using numerical simulation. Modeling result indicated that groundwater level distribution of Seoul generally followed the topography, but the significant decreases in groundwater level were observed around the subway network. Steady-state water balance analysis showed groundwater recharge by rainfall and leakage from the water supply network was about 550,495 m3/day. Surface water inflow and baseflow rate via Han River and major streams accounted for 799,689 m3/day and 1,103,906 m3/day, respectively. Groundwater usage was 60,945 m3/day, and the total groundwater leakage along the subway lines amounted to 114,746 m3/day. Modeling results revealed that the subway could decrease net groundwater baseflow by 40%. Our study result demonstrated that the subway system can have a significant influence on the groundwater environment of Seoul.