• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.232-234
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• 1996

We have investigated the effect of molecular structure of polymer of rubbed polyimide (PI) films for surface liquid crystal alignment. To obtain surface alignment effect of Polymer molecular structure, we measured the polar (out of plane-tilt) anchoring strength and surface ordering of 5CB on rubbed PI surfaces. We have found that the polar anchoring strength of 5CB is depend on the polymer molecular structure of these unidirectionally rubbed PI surfaces.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.372-378
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• 1996

The phtoreflectance(PR) spectra of B ion implanted semi-insulating(SI) GaAs were studied. Ion implantation was performed by 150keV implantation energy and 1*10/aup 12/-10$^{15}$ ions/c $m^{2}$ doses. Electronic band structure was damaged by ion implantation with above 1*10$^{13}$ ions/c $m^{2}$ dose. When samples were annealed, " peak was observed at 30-40meV below band gap( $E_{g}$). It should be noted that this energy is close to the ionization energies of S $i_{As}$ , and GeAs in G $a_{As}$ which are also found as impurities in LEC GaAs, it is therefore possible that this feature is related to S $i_{As}$ , or G $e_{As}$ and B ions by implanted defect associated with them. From PR spectra of etched samples which is as-implanted by 1*10$^{14}$ and 1*10$^{15}$ ions/c $m^{2}$ dose, the depth of destroyed electronic band structure was from surface to 0.2.mu.m below surface.nic band structure was from surface to 0.2.mu.m below surface.

• Transactions on Electrical and Electronic Materials
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• v.10 no.2
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• pp.40-43
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• 2009

The authors fabricated a nanopatterned surface on a GaN thin film deposited on a sapphire substrate and used that as an epitaxial wafer on which to grow an InGaN/GaN multi-quantum well structure with metal-organic chemical vapor deposition. The deposited GaN epitaxial surface has a two-dimensional photonic crystal structure with a hexagonal lattice of 230 nm. The grown structure on the nano-surface shows a Raman shift of the transverse optical phonon mode to $569.5\;cm^{-1}$, which implies a compressive stress of 0.5 GPa. However, the regrown thin film without the nano-surface shows a free standing mode of $567.6\;cm^{-1}$, implying no stress. The nanohole surface better preserves the strain energy for pseudo-morphic crystal growth than does a flat plane.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.1
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• pp.1-6
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• 2002

The hot carried degradation in a metal oxide semiconductor device has been one of the most serious concerns for MOS-ULSI. In this paper, three types of LDD(lightly doped drain) structure for suppression of hot carried degradation, such as decreasing of performance due to spacer-induced degradation and increase of series resistance will be investigated. in this study, LDD-nMOSFETs used had three different drain structure, (1) conventional surface type LDD(SL), (2) Buried type LDD(BL), (3) Surface implantation type LDD(SI). As experimental results, the surface implantation the LDD structure showed that improved hot carrier lifetime to comparison with conventional surface and buried type LDD structures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.92-92
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• 2008

The surface flatness of heteroepitaxially grown 3C-SiC thin films is a key factor affecting electronic and mechanical device applications. This paper describes the surface flatness of polycrystalline 3C-SiC thin films by the gas flow control according to the location change of geometric structure. The polycrystalline 3C-SiC thin film was deposited by APCVD(Atmospheric pressure chemical vapor deposition) at $1200^{\circ}C$ using HMDS(Hexamethyildisilane : $Si_2(CH_3)_6)$ as single precursor, and 5 slm Ar as the main flow gas. According to the location of geometric structure, surface fringes and flatness changed. It shows the distribution of thickness is formed uniformly in the specific location of the geometric structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.103-104
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• 2006

Transparent conductive oxide (TCO) are necessary as front electrode for increased efficiency of LED. In our paper, transparent conducting alminum-doped Zinc oxide films (AZO) were prepared by rf magnetron sputtering on glass (corning 1737) substrate, were then annealed at temperature $400^{\circ}C$ for 2hr. The smooth AZO films were etched in diluted HCL (0.5%) to examine the surface morphology properties as a variation of the time. The surface morphology of AZO films increased as a time. We observed texture structure of AZO thin film etched for 1min.

• Journal of Magnetics
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• v.18 no.4
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• pp.375-379
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• 2013

The electronic and the magnetic properties of (001) surface of $KCaN_2$ half-metallic compound with full-Heusler structure are studied with the use of a full-potential linearized augmented plane wave method. Two possible terminations of the surface are considered and only the one with N atoms in the topmost layer is found to retain the half-metallic properties of the bulk. The magnetic properties of N-terminated surface are enhanced compared with the properties of the bulk. The calculated magnetic moments on the N atoms in the $KCaN_2$ are 1.26 ${\mu}_B$ in the bulk and 1.90 ${\mu}_B$ at the surface. The subsurface metal atoms are also slightly polarized. In the surface terminated with metal atoms, not only the half-metallicity is destroyed, but also the magnetic properties of the system are weakened.

• Applied Science and Convergence Technology
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• v.23 no.5
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• pp.201-210
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• 2014

The influence of electron irradiation and hydrogen adsorption on the electronic structure of the $SrTiO_3$ (001) surface was investigated by ultraviolet photoemission spectroscopy (UPS). Upon electron irradiation of the surface, UPS revealed an electronic state within the band gap (in-gap state: IGS) with the surface kept at $1{\times}1$. This is considered to originate from oxygen vacancies at the topmost surface formed by electron-stimulated desorption of oxygen. Electron irradiation also caused a downward shift of the valence band maximum indicating downward band-bending and formation of a conductive layer on the surface. With oxygen dosage on the electron-irradiated surface, on the other hand, the IGS intensity was decreased along with upward band-bending, which points to disappearance of the conductive layer. The results indicate that electron irradiation and oxygen dosage allow us to control the surface electronic structure between semiconducting (nearly-vacancy free: NVF) and metallic (oxygen de cient: OD) regimes by changing the density of the oxygen vacancy. When the NVF surface was exposed to atomic hydrogen, in-gap states were induced along with downward band bending. The hydrogen saturation coverage was evaluated to be $3.1{\pm}0.8{\times}10^{14}cm^{-2}$ with nuclear reaction analysis. From the IGS intensity and H coverage, we argue that H is positively charged as $H^{{\sim}0:3+}$ on the NVF surface. On the OD surface, on the other hand, the IGS intensity due to oxygen vacancies was found to decrease to half the initial value with molecular hydrogen dosage. H is expected to be negatively charged as $H^-$ on the OD surface by occupying the oxygen vacancy site.

• Bulletin of the Korean Chemical Society
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• v.30 no.8
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• pp.1755-1759
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• 2009

Surface structure and molecular orientation of self-assembled monolayers (SAMs) formed by the spontaneous adsorption of tetrahydrothiophene (THT) and thiophene (TP) on Au(111) were investigated by means of scanning tunneling microscopy (STM) and carbon K-edge near edge X-ray absorption fine structure (NEXAFS) spectroscopy. STM imaging revealed that THT SAMs have a commensurate (3 ${\times}\;2\sqrt[]{3}$) structure containing structural defects in ordered domains, whereas TP SAMs are composed of randomly adsorbed domains and paired molecular row domains that can be described as an incommensurate packing structure. The NEXAFS spectroscopy study showed that the average tilt angle of the aliphatic THT ring and $\pi$-conjugated TP ring in the SAMs were calculated to be about $30^o\;and\;40^o$, respectively, from the surface normal. It was also observed that the $\pi$* transition peak in the NEXAFS spectrum of the TP SAMs is very weak, suggesting that a strong interaction between $\pi$-electrons and the Au surface arises during the self-assembly of TP molecules. In this study, we have clearly demonstrated that the surface structure and adsorption orientation of organic SAMs on Au(111) are strongly influenced by whether the cyclic ring is saturated or unsaturated.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.78-79
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• 2003