• Title/Summary/Keyword: Surface diffusion

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The Study on the Characteristic of Mono Crystalline Silicon Solar Cell with Change of $O_2$ Injection during Drive-in Process and PSG Removal (단결정 실리콘 태양전지 도핑 확산 공정에서 주입되는 $O_2$ 가스와 PSG 유무에 따른 특성 변화)

  • Choi, Sung-Jin;Song, Hee-Eun;Yu, Gwon-Jong;Lee, Hi-Deok
    • 한국태양에너지학회:학술대회논문집
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    • 2011.04a
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    • pp.105-110
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    • 2011
  • The doping procedure in crystalline silicon solar cell fabrication usually contains oxygen injection during drive-in process and removal of phosphorous silicate glass(PSG). In this paper, we studied the effect of oxygen injection and PSG on conversion efficiency of solar cell. The mono crystalline silicon wafers with $156{\times}156mm^2$, $200{\mu}m$, $0.5-3.0{\Omega}{\cdot}cm$ and p-type were used. After etching $7{\mu}m$ of the surface to form the pyramidal structure, the P(phosphorous) was injected into silicon wafer using diffusion furnace to make the emitter layer. After then, the silicon nitride was deposited by the PECVD with 80 nm thickness and 2.1 refractive index. The silver and aluminium electrodes for front and back sheet, respectively, were formed by screen-printing method, followed by firing in 400-425-450-550-$880^{\circ}C$ five-zone temperature conditions to make the ohmic contact. Solar cells with four different types were fabricated with/without oxygen injection and PSG removal. Solar cell that injected oxygen during the drive-in process and removed PSG after doping process showed the 17.9 % conversion efficiency which is best in this study. This solar cells showed $35.5mA/cm^2$ of the current density, 632 mV of the open circuit voltage and 79.5 % of the fill factor.

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Thermal Stabilization of Alumina by Ba Addition (Ba 첨가에 의한 알루미나의 열 안정화 효과)

  • Seo, Doo-Won;Han, Moon-Hee;Lee, Chae-Hyun
    • The Journal of Engineering Research
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    • v.2 no.1
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    • pp.139-145
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    • 1997
  • The effect of Ba addition on the thermal stabilization of $\gamma$-$Al_2O_3$ powders were studied. Ba additive was introduced into $\gamma$-$Al_2O_3$ powders by wet impregnation of $Ba(No_3)_3$.$6H_2O$. Ba additive was proved to be effective on the thermal stabilization of $\gamma$-$Al_2O_3$ powders by suppression of sintering. The optimum content of Ba was determined by 5 mol%, through the calcinations temperature range. It is suggested that the main reason of thermal stabilizaton is the substitution effect of large $Ba^{2+}$ ions into the $\Al^{3+}$ sites, which suppressed the surface diffusion of $\Al^{3+}$ ions.

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High-Temperature Oxidation of Ti Containing Stainless Steel in O2-N2 Atmosphere

  • Onishi, Hidenori;Saeki, Isao;Furuichi, Ryusaburo;Okayama, Toru;Hanamatsu, Kenko;Shibayama, Tamaki;Takahashi, Heishichiro;Kikkawa, Shinichi
    • Corrosion Science and Technology
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    • v.3 no.4
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    • pp.140-147
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    • 2004
  • High temperature oxidation of Fe-19Cr and Fe-19Cr-0.2Ti alloys is studied at 1173-1373 K in 16.5 kPa $O_2$ - balances $N_2$ atmosphere aimed at clarifying the effect of titanium addition. Oxidation rate of Fe-19Cr alloy was accelerated with titanium. For both alloys chromium rich $(Fe,\;Cr)_2O_3$ was formed as a major oxidation product. On Fe-19Cr-0.2Ti alloy, a thin layer composed of spinel type oxide and titanium oxide was also formed and an internal oxidation of titanium was observed. Titanium was concentrated at the oxide surface and internal oxidation zone but a small amount of titanium was also found in the intermediate corundum type $(Fe,\;Cr)_2O_3$ layer. Crystals of corundum type $(Fe,\;Cr)_2O_3$ formed on Fe-19Cr alloy are coarse but that formed on Fe-19Cr -0.2Ti alloys were fine and columnar. Reason for the difference in oxidation kinetics and crystal structure will be discussed relating to the distribution of aliovalent titanium in corundum type $(Fe,\;Cr)_2O_3$ oxide layer.

Determination of the pH of Iso-Selectivity of the Interfacial Diffusion Layer of Fe

  • Ha, Heon Young;Kwon, Hyuk Sang
    • Corrosion Science and Technology
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    • v.7 no.1
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    • pp.40-44
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    • 2008
  • Passive metal forms an interfacial diffuse layer on the surface of passive film by its reaction with $H^+$ or $OH^-$ ions in solution depending on solution pH. There is a critical pH, called pH point of iso-selectivity ($pH_{pis}$) at which the nature of the diffuse layer is changed from the anion-permeable at pH<$pH_{pis}$ to the cation-permeable at pH>$pH_{pis}$. The $pH_{pis}$ for a passivated Fe was determined by examining the effects of pH on the thickness of passive film and on the dissolution reaction occurring on the passive film under a gavanostatic reduction in borate-phosphate buffer solutions at various pH of 7~11. The steady-state thickness of passive film formed on Fe showed the maximum at pH 8.5~9, and further the nature of film dissolution reaction was changed from a reaction producing $Fe^{3+}$ ion at $pH\leq8.5$ to that producing $FeO_2{^-}$ at $pH\geq9$, suggesting that the $pH_{pis}$ of Fe is about pH 8.5~9. In addition, the passive film formed at pH 8.5~9, $pH_{pis}$, was found to be the most protective with the lowest defect density as confirmed by the Mott-Schottky analysis. Pitting potential was decreased with increasing $Cl^-$ concentration at $pH\leq8.5$ due probably to the formation of anion permeable diffuse layer, but it was almost constant at $pH\geq9$ irrespective of $Cl^-$ concentration due primarily to the formation of cation permeable diffuse layer on the film, confirming again that $pH_{pis}$ of Fe is 8.5~9.

A Study on the Formation of Cobalt Policide Gate Electrode (코발트 폴리사이드 게이트전극 형성에 관한 연구)

  • Shim, Hyun-Sang;Koo, Bon-Cheol;Joung, Yeon-Sil;Bae, Kyoo-Sik
    • Korean Journal of Materials Research
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    • v.8 no.6
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    • pp.499-504
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    • 1998
  • For the formation of cobalt polycide gate electrode, CoSi, was grown on columnar poly-Si, granular poly-Si or amorphous Si by depositing either Co monolayer or Co/Ti bilayer and its thermal stability was compared to study effects of the substrate crystallinity and the silicide formation method. When specimens were rapidly heat-treated at 90$0^{\circ}C$ up to 600 seconds, using amorphous Si or Co/Ti on all substrates improved the thermal stability. This was attributed to the uniform chemical composition of initial CoSi, and its smooth interface with the substrates, induced by smooth and clean Si surface and delayed Co diffusion. The main factors determining the thermal stability were found to be composition uniformity and smooth interface of $CoSi_2$, intially formed at the early stage of the heat-treatment.

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Microstructures and Electrical Properties of Thick PZT Films with Thickness Variation Fabricated by Multi-coating Method (Multi-coating법으로 제조된 두꺼운 PZT막의 두께 변화에 따른 미세구조 및 전기적 특성)

  • Park, Jun-Sik;Jang, Yeon-Tae;Park, Hyo-Deok;Choe, Seung-Cheol;Gang, Seong-Gun
    • Korean Journal of Materials Research
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    • v.12 no.3
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    • pp.211-214
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    • 2002
  • Properties of 52/48 PZT films with various thicknesses for piezoelectric micro-electro mechanical systems (MEMS) devices fabricated by multi-coating method on $Pt(3500{\AA})/Ti(400{\AA})/SiO_2(3000{\AA})/Si$(525$\mu\textrm{m}$) substrates were investigated. PZT films were deposited by spin-coating process at 3500 rpm for 30 sec, followed by pyrolysis at 45$0^{\circ}C$ for 10 min producing the thickness of about 120nm. These processes were repeated 4, 8, 12, 16 and 20 times in order to have various thicknesses, respectively. Finally, they were crystallized at $650^{\circ}C$ for 30 min. All thick PZT films showed dense and homogeneous surface microstructures. Thick PZT films showed crystalline structures of random orientations with increasing thickness. Dielectric constants of thick PZT films were increased with increasing film thickness and reached 800 at 100kHz for 2.3$\mu\textrm{m}$ thick PZT film. $P_r\; and\; E_c$ of 2.3$\mu\textrm{m}$ thick PZT films were about 20$\mu$C/$\textrm{cm}^2$ and 63kV/cm. Depth profile analysis by Auger Electron Spectroscopy (AES) of 4800 $\AA$ thick PZT film showed the formation of the perovskite phase on Pt layer by Pb diffusion behavior. It was considered that Pb-Pt intermediate layer promoted PZT (111) columnar structures.

Comparative assessment of antibacterial activity of different glass ionomer cements on cariogenic bacteria

  • Naik, Rahul Gaybarao;Dodamani, Arun Suresh;Khairnar, Mahesh Ravindra;Jadhav, Harish Chaitram;Deshmukh, Manjiri Abhay
    • Restorative Dentistry and Endodontics
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    • v.41 no.4
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    • pp.278-282
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    • 2016
  • Objectives: Glass ionomer cements (GICs), which are biocompatible and adhesive to the tooth surface, are widely used nowadays for tooth restoration. They inhibit the demineralization and promote the remineralization of the tooth structure adjacent to the restoration, as well as interfere with bacterial growth. Hence, the present study was conducted to assess and compare the antimicrobial activity of three commercially available GICs against two cariogenic bacteria. Materials and Methods: An agar plate diffusion test was used for evaluating the antimicrobial effect of three different GICs (Fuji IX, Ketac Molar, and d-tech) on Streptococcus mutans (S. mutans) and Lactobacillus acidophilus (L. acidophilus). Thirty plates were prepared and divided into two groups. The first group was inoculated with S. mutans, and the second group was inoculated with L. acidophilus. These plates were then incubated at $37^{\circ}C$ for 24 hours. Zones of bacterial growth inhibition that formed around each well were recorded in millimeters (mm). Results: The zones of inhibition for Fuji IX, Ketac Molar, and d-tech on S. mutans were found to be $10.84{\pm}0.22mm$, $10.23{\pm}0.15mm$, and $15.65{\pm}0.31mm$, respectively, whereas those for L. acidophilus were found to be $10.43{\pm}0.12mm$, $10.16{\pm}0.11mm$, and $15.57{\pm}0.13mm$, respectively. Conclusions: D-tech cement performed better in terms of the zone of bacterial inhibition against the two test bacteria, than the other two tested glass ionomers.

Characteristics of Ni/Co Composite Silicides for Poly-silicon Gates (게이트를 상정한 니켈 코발트 복합실리사이드 박막의 물성연구)

  • Kim, Sang-Yeob;Jung, Young-Soon;Song, Oh-Sung
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.2 s.35
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    • pp.149-154
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    • 2005
  • We fabricated Ni/Co(or Co/Ni) composite silicide layers on the non-patterned wafers from Ni(20 nm)/Co(20 nm)/poly-Si(70 nm) structure by rapid thermal annealing of $700{\~}1100^{\circ}C$ for 40 seconds. The sheet resistance, cross-sectional microstructure, and surface roughness were investigated by a four point probe, a field emission scanning electron microscope, and a scanning probe microscope, respectively. The sheet resistance increased abruptly while thickness decreased as silicidation temperature increased. We propose that the poly silicon inversion due to fast metal diffusion lead to decrease silicide thickness. Our results imply that we should consider the serious inversion and fast transformation in designing and process f3r the nano-height fully cobalt nickel composite silicide gates.

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Effects of rapid thermal annealing on Physical properties of polycrystalline CdTe thin films (급속열처리가 다결정 CdTe 박막의 물성에 미치는 효과에 관한 연구)

  • 조영아;이용혁;윤종구;오경희;염근영;신성호;박광자
    • Journal of the Korean Vacuum Society
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    • v.5 no.4
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    • pp.348-353
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    • 1996
  • Rapid thermal annealing (RTA) was applied to polycrystalline CdTe thin films evaporated on CdS/ITO/glass substrate and the effect of the annealing temperatures and the atmosphere on physical properties of polycrystalline CdTe thin films and CdTe/CdS solar cell characteristics were studied. Results obtained by EDX showed that the bulk composition of CdTe remained stoichiometric after annealing at $550^{\circ}C$ in the air but the surface composition became Cd-rich. Cross-sectional TEM and micro EDX showed that columnar grains and micro-twins remained even after RTA, however, and the sulfur content in the annealed CdTe (added by sulfur diffusion from CdS during the annealing) was much smaller than that by furnace annealing. Among the investigated RTA temperatures and gas environments, the cell made with CdTe annealed at $550^{\circ}C$ in air showed the best solar energy conversion efficiency.

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Prediction of Differential Drying Shrinkage in Concrete (콘크리트의 부등건조수축에 관한 연구)

  • 김진근;이칠성
    • Magazine of the Korea Concrete Institute
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    • v.9 no.2
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    • pp.153-161
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    • 1997
  • In the concrete st~uctures exposed to the environmental condition, the water movement is occurred by thc moisture difilsion, and the rnoisturrt distribution in concwt.c is nonunifhrm. Such a non-unif'orm moisture distribution causes tht. diflbrent.ia1 drying shrinkage in concrete structures. From this typc. of' dif'fercntial drying shrinkagr' tensiit-1 stress is occurred in exposure surface of concrete structures. and may result in crack formation. This residual stress is significantly affected by the creep of concrete, and the differential creep is also occurred at the cross section of concrete structures due to moisture difference at each locations. In this study, based on the moisture diffusion theory, a finite element program which is capable of simulating the moisture distribution in concrete was developed. And the analysis method for the differential drying shrinkage was suggested, in which the differential creep was considered. The differential drying shrinkage strain was also measured at various positions of concrete. Finally the validity of analysis method was proved by comparing test results with analytical results.