• Transactions on Electrical and Electronic Materials
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• v.14 no.4
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• pp.203-207
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• 2013

P-type Si wafers were dipped in HF solution. The minority carrier lifetime (lifetime) increased after HF treatment due to the hydrogen termination effect. To investigate the film passivation effect, PECVD was used to deposit $SiN_x$ on both HF-treated and untreated wafers. $SiN_x$ generally helped to improve the lifetime. A thermal process at $850^{\circ}C$ reduced the lifetime of all wafers because of the dehydrogenation at high temperature. However, the HF-treated wafers showed better lifetime than untreated wafers. PERCs both passivated and not passivated by HF treatment were fabricated on the rear side, and their characteristics were measured. The short-circuit current density and the open-circuit voltage were improved due to the effectively increased lifetime by HF treatment.

• Journal of the Korean Chemical Society
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• v.18 no.6
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• pp.391-399
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• 1974

Corrosion and passivation of metallic cobalt was studied by means of electrochemical experiments including potentiostatic and galvanostatic measurements and cyclic voltammograms. The mechanisms of active dissolution and passivation of cobalt at the metal/borate buffer solution interface are deduced from the Tafel slope, pH dependence of the Flade potential, and dissolution kinetic data. Hydroxyl group adsorbed on cobalt surface seems to participate in surface oxidation and formation of the passive layer. The growth kinetic data as measured by the current density suggests a mechanism in which the growth of the passive layer is determined by field-assisted transport of ions through the layer. Thickness of the passive layer was estimated by coulometry to be about 10${\AA}$ at the lowest passive potential and to grow gradually with anodic potential to about 20${\AA}$.

• Korean Journal of Metals and Materials
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• v.47 no.10
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• pp.644-651
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• 2009

The passivation (or deactivation) of a metal surface during oxide film formation has been quantitatively explored for a ferritic stainless steel by using dynamic electrochemical impedance spectroscopy (DEIS). For this purpose, the electrochemical impedance spectra were carefully examined as a function of applied potential in the active nose region of the potentiodynamic polarization curve, to separate the charge transfer resistance and oxide film resistance. From the discrepancy in the potential dependence between the experimental charge transfer resistance and the semi-empirically expected one, the degree of passivation could be quantitatively estimated. The sensitivity of passivation of the steel surface to anodic potential, which might be the measure of the quality of the oxide film formed under unit driving force or over-potential, decreased by 31% when 3.5 wt% NaCl was added to a 5 wt% $H_2SO_4$ solution.

• Journal of Sensor Science and Technology
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• v.29 no.4
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• pp.266-269
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• 2020

In this study, we investigated the effect of a sulfur passivation (S-passivation) process step on the electrical properties of surface-channel In_0.7Ga_0.3As quantum-well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) with S/D regrowth contacts. We fabricated long-channel In_0.7Ga_0.3As QW MOSFETs with and without (NH₄)₂S treatment and then deposited 1/4 nm of Al₂O₃/HfO₂ through atomic layer deposition. The devices with S-passivation exhibited lower values of subthreshold swing (74 mV/decade) and drain-induced barrier lowering (19 mV/V) than the devices without S-passivation. A conductance method was applied, and a low value of interface trap density D_it (2.83×10¹² cm^-2eV^-1) was obtained for the devices with S-passivation. Based on these results, interface traps between InGaAs and high-κ are other defect sources that need to be considered in future studies to improve III-V microsensor sensing platforms.

• Particle and aerosol research
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• v.9 no.3
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• pp.173-185
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• 2013

Oxidations of metal generate large quantity of thermal and light energies but no toxic pollutants, so that metals with high calorific values, such as beryllium, boron, aluminum, magnesium, and lithium, are possible to be used as clean fuels instead of fossil fuels. However, they are so explosive due to very high oxidation rates that they should be stabilized by their surface passivation with oxides, organics and inorganics. For reasonable use of energetic metal particles as solid fuel, therefore, some detail information, such as thermal properties, preparation and passivation methods, and application area, of the energetic metals is introduced in this manuscript.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.683-686
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• 2007

We have developed the transparent passivation layer for transparent organic light-emitting devices (TOLEDs) using CsCl layer. The CsCl passivation layer improves the optical transmittance of Ca/Ag double layer which have used as a semitransparent cathode, resulting in substantial increase of the luminance by the enhanced light extraction out of the cathode surface of the TOLEDs.

• Current Optics and Photonics
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• v.5 no.2
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• pp.129-133
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• 2021

This study observed the performance of an InAs/GaSb type-II superlattice photodiode with a p-i-n structure for mid-wavelength infrared detection. The 10 ML InAs/10 ML GaSb type-II superlattice photodiode was grown using molecular beam epitaxy. The cutoff wavelength of the manufactured photodiode with Si3N4 passivation on the mesa sidewall was determined to be approximately 5.4 and 5.5 ㎛ at 30 K and 77 K, respectively. At a bias of -50 mV, the dark-current density for the Si3N4-passivated diode was measured to be 7.9 × 10-5 and 1.1 × 10-4 A/㎠ at 77 K and 100 K, respectively. The differential resistance-area product RdA at a bias of -0.15 V was 1481 and 1056 Ω ㎠ at 77 K and 100 K, respectively. The measured detectivity from a blackbody source at 800 K was calculated to be 1.1 × 1010 cm Hz1/2/W at zero bias and 77 K.

• Bulletin of the Korean Chemical Society
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• v.22 no.2
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• pp.189-193
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• 2001

The irreversible capacities caused by the reduction of solvent on the surface of a negative electrode (KMFC:Kawasaki Mesophase Fine Carbon) were examined during the initial cycle in ethylene carbonate (EC)-diethyl carbonate (DEC) electrolyte solut ions at various concentrations of LiPF6. Chronopotentiograms, linear sweep voltammograms, and impedance spectra clearly showed differences in irreversible capacity and that those differences are related to the concentration of electrolyte during the initial charge. These differences were caused by the amount of solvent decomposition as a function of the concentration of LiPF6 electrolytic salt. The data are discussed with reference to the concentration of electrolytic salt and the properties of passivation film formed by solvent decomposition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.5
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• pp.341-344
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• 2018

In order to achieve a high efficiency for the silicon solar cell, a passivation characteristic that minimizes the electrical loss at a silicon interface is required. In this paper, we evaluated the applicability of the oxide film formed by ozone for the tunnel silicon oxide film. To this end, we fabricated the silicon oxide film by changing the condition of ozone oxidation and compared the characteristics with the oxide film formed by the existing nitric acid solution. The ozone oxidation was formed in the temperature range of $300{\sim}500^{\circ}C$ at an ozone concentration of 17.5 wt%, and the passivation characteristics were compared. Compared to the silicon oxide film formed by nitric acid oxidation, implied open circuit voltage (iVoc) was improved by ~20 mV in the ozone oxidation and the ozone oxidation after the nitric acid pretreatment was improved by ~30 mV.

• Korean Journal of Materials Research
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• v.30 no.8
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• pp.393-398
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• 2020

We propose a novel stripping solution containing acids (HCl and HNO₃), an oxidant [(NH₄)₂S₂O₈], and complexing agents (NaCl and citric acid) to remove surface passivation layers from 14K gold alloys fabricated using an investment casting process. The optimized solution employing only HCl acid is determined by varying molar fractions of HCl and HNO₃ on 14K yellow gold samples. Stripping properties are also identified for red and white gold alloy samples under the optimized stripping conditions. The removal of passivation layers, weight loss, and microstructure evolution are characterized using Raman spectroscopy, a precision scale, and optical microscopy. The proposed stripping solution effectively removes passivation layers more rapidly than conventional cyanide stripping. Weight loss increases linearly for up to 5 min for all 14K gold alloys. Red gold exhibits the greatest weight loss, followed by yellow gold and white gold. The results of microstructural analysis reveal that the conformal stripping occurs according to time. These results imply that the proposed oxidative chloride stripping might replace conventional cyanide stripping.