• 제목/요약/키워드: Surface MEMS

검색결과 294건 처리시간 0.022초

THE EFFECTS OF ADDITIVES IN NICKEL AND COPPER ELECTROPLATING FOR MICROSTRUCTURE FABRICATION

  • Kim, Go-Eun;Lee, Jae-Ho
    • 한국표면공학회지
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    • 제32권3호
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    • pp.214-218
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    • 1999
  • The effect of additives in nickel and copper electroplating were investigated for MEMS applications. Saccharin and gelatin were used as additives in nickel and copper electroplating bath respectively. The morphology and surface hardness of electroplated coating were investigated with additive concentration. Microstructures were fabricated with optimum conditions.

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평판형 MEMS 고체 추진제 추력기 요소 제작 및 성능 평가 (Fabrication, Performance Evaluation of Components of Planar Type MEMS Solid Propellant Thruster)

  • 박종익;권세진
    • 한국항공우주학회지
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    • 제36권6호
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    • pp.581-586
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    • 2008
  • 기존의 수 mN급의 MEMS 고체 추진제 추력기는 실제 마이크로/나노 위성체의 킥모터,지능탄(Smart bomb)의 측추력기로 응용하기에는 추력 레벨이 너무 낮다는 한계가 있었다. 이 연구에서는 고체 추진제의 연소 면적을 증대시킴으로써 추력 레벨이 향상된 MEMS 고체 추진제 추력기의 제작 가능성을 확인하고 연소 실험을 통해서 구조체의 안정성을 확인하였으며 직접 추력을 측정하여 수백 mN급의 단위 추력기를 개발하였다. 연소 챔버와 노즐, 덮개 층은 감광성 유리 기판을 이용하여 제작하였으며 마이크로 점화기는 파이렉스 기판 위에 300 ㎚ 높이의 니켈과 크롬을 페터닝(patterning)하여 제작하였다. 마이크로 점화기의 성능 해석과 실험을 통한 검증을 수행하여 고체 추진제의 점화를 위한 공급 전력을 계산하였으며 힘 센서를 통하여 추력기의 추력을 측정하였다. 측정된 추력은 K=15와 20인 경우에 300, 600 mN 이었다.

MEMS 부품 제조를 위한 나노 리소그래피 공정의 3차원 분자동력학 해석 (Three Dimensional Molecular Dynamics Simulation of Nano-Lithography Process for Fabrication of Nanocomponents in Micro Electro Mechanical Systems (MEMS) Applications)

  • 김영석;이승섭;나경환;손현성;김진
    • 대한기계학회논문집A
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    • 제27권10호
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    • pp.1754-1761
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    • 2003
  • The atomic force microscopy (AFM) based lithographic technique has been used directly to machine material surface and fabricate nano components in MEMS (micro electro mechanical system). In this paper, three-dimensional molecular dynamics (MD) simulations have been conducted to evaluate the characteristic of deformation process at atomistic scale for nano-lithography process. Effects of specific combinations of crystal orientations and cutting directions on the nature of atomistic deformation were investigated. The interatomic force between diamond tool and workpiece of copper material was assumed to be derived from the Morse potential function. The variation of tool geometry and cutting depth was also evaluated and the effect on machinability was investigated. The result of the simulation shows that crystal plane and cutting direction significantly influenced the variation of the cutting forces and the nature of deformation ahead of the tool as well as the surface deformation of the machined surface.

극한 환경 MEMS용 2" 3C-SiC기판의 직접접합 특성 (Direct Bonding Characteristics of 2" 3C-SiC Wafers for Harsh Environment MEMS Applications)

  • 정귀상
    • 한국전기전자재료학회논문지
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    • 제16권8호
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    • pp.700-704
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    • 2003
  • This paper describes on characteristics of 2" 3C-SiC wafer bonding using PECVD (plasma enhanced chemical vapor deposition) oxide and HF (hydrofluoride acid) for SiCOI (SiC-on-Insulator) structures and MEMS (micro-electro-mechanical system) applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si (001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR (attenuated total reflection Fourier transformed infrared spectroscopy). The root-mean-square suface roughness of the oxidized SiC layers was measured by AFM (atomic force microscope). The strength of the bond was measured by tensile strength meter. The bonded interface was also analyzed by IR camera and SEM (scanning electron microscope), and there are no bubbles or cavities in the bonding interface. The bonding strength initially increases with increasing HF concentration and reaches the maximum value at 2.0 % and then decreases. These results indicate that the 3C-SiC wafer direct bonding technique will offers significant advantages in the harsh MEMS applications.ions.

극한 환경 MEMS용 옴익 접촉을 위한 다결정 3C-SiC 박막의 표면 처리 효과 (Effect of Surface Treatments of Polycrystalline 3C-SiC Thin Films on Ohmic Contact for Extreme Environment MEMS Applications)

  • 정귀상;온창민
    • 한국전기전자재료학회논문지
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    • 제20권3호
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    • pp.234-239
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    • 2007
  • This paper describes the TiW ohmic contact characteristics under the surface treatment of the polycrystalline 3C-SiC thin film grown on $SiO_2/Si(100)$ wafers by APCVD. The poly 3C-SiC surface was polished by using CMP(chemical mechanical polishing) process and then oxidized by wet-oxidation process, and finally removed SiC oxide layers. A TiW thin film as a metalization process was deposited on the surface treated poly 3C-SiC layer and was annealed through a RTA(rapid thermal annealing) process. TiW/poly 3C-SiC was investigated to get mechanical, physical, and electrical characteristics using SEM, XRD, XPS, AFM, optical microscope, I-V characteristic, and four-point probe, respectively. Contact resistivity of the surface treated 3C-SiC was measured as the lowest $1.2{\times}10^{-5}{\Omega}cm^2$ at $900^{\circ}C$ for 45 sec. Therefore, the surface treatments of poly 3C-SiC are necessary to get better contact resistance for extreme environment MEMS applications.

Consumable Approaches of Polysilicon MEMS CMP

  • Park, Sung-Min;Jeong, Suk-Hoon;Jeong, Moon-Ki;Park, Boum-Young;Jeong, Hae-Do;Kim, Hyoung-Jae
    • Transactions on Electrical and Electronic Materials
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    • 제7권4호
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    • pp.157-162
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    • 2006
  • Chemical-mechanical polishing (CMP), one of the dominant technology for ULSI planarization, is used to flatten the micro electro-mechanical systems (MEMS) structures. The objective of this paper is to achieve good planarization of the deposited film and to improve deposition efficiency of subsequent layer structures by using surface-micromachining process in MEMS technology. Planarization characteristic of poly-Si film deposited on thin oxide layer with MEMS structures is evaluated with different slurries. Patterns used for this research have shapes of square, density, line, hole, pillar, and micro engine part. Advantages of CMP process for MEMS structures are observed respectively by using the test patterns with structures larger than 1 urn line width. Preliminary tests for material selectivity of poly-Si and oxide are conducted with two types of silica slurries: $ILD1300^{TM}\;and\;Nalco2371^{TM}$. And then, the experiments were conducted based on the pretest. A selectivity and pH adjustment of slurry affected largely step heights of MEMS structures. These results would be anticipated as an important bridge stone to manufacture MEMS CMP slurry.

Investigation of Pyrolyzed Polyimide Thin Film as MEMS Material

  • Naka, Keisuke;Nagae, Hideki;Ichiyanagi, Masao;Jeong, Ok-Chan;Konishi, Satoshi
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제5권1호
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    • pp.38-44
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    • 2005
  • Pyrolyzed polyimide is explored in terms of MEMS material. This paper describes chemical, electrical, mechanical properties of pyrolyzed polyimide (PIX-1400) thin film as MEMS material. When polyimide thin film was pyrolyzed at $800^{\circ}C$ for 60 minutes in $N_{2}$ ambient, the residual ratio of pyrolyzed film thickness measured with a surface profiler is about 49 %, and the resistivity is about $2.17{\times}10^{-2}\;{Omega}cm$. From the result of the load-deflection test, the estimated Young's modulus and initial average stress of pyrolyzed polyimide are 67 GPa and 30 MPa, respectively. As one demonstration of MEMS structures of pyrolyzed polyimide, the fabrication method of the microbridge structure is proposed for a micro heater and a resonator.

MEMS 기반의 IR $CO_2$ 센서 제작 및 특성 평가 (A Fabrication of IR $CO_2$ Sensor based on the MEMS and Characteristic Evaluation)

  • 김신근;한용희;문성욱
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제54권5호
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    • pp.232-237
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    • 2005
  • In this paper, we fabricated $CO_2$ gas sensor based on the MEMS infrared sensor and characterized its electrical and $CO_2$-sensing properties. The fabricated $CO_2$ gas sensor by MEMS technique has many advanges over NDIR(nondispersive) $CO_2$ sensor such as monolithic fabrication, very high selectivity on $CO_2$, low power consumption and compact system. Microbolometer by surface micromachining was fabricated for gas detector and $CO_2$ filter chip by bulk micromachining was fabricated for signal referencing. By using the proposed and fabricated gas sensor, we are expected to measure $CO_2$ concentration more accurately with high reliability.

초고추파 집적 회로를 위한 새로운 실리콘 MEMS 패키지 (THe Novel Silicon MEMS Package for MMICS)

  • 권영수;이해영;박재영;김성아
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제51권6호
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    • pp.271-277
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    • 2002
  • In this paper, a MEMS silicon package is newly designed, fabricated for HMIC, and characterized for microwave and millimeter-wave device applications. The proposed package is fabricated by using two high resistivity silicon substrates and surface/bulk micromachining technology. It has a good performance characteristic such as -20㏈ of $S_11$/ and -0.3㏈ of $S_21$ up to 20㎓, which is useful in microwave region. It has also better heat transfer characteristics than the commonly used ceramic package. Since the proposed silicon MEMS package is easy to fabricate and wafer level chip scale packaging is also possible, the production cost can be much lower than the ceramic package. Since it will be a promising low-cost package for mobile/wireless applications.