• Journal of the Korean Magnetics Society
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• v.18 no.5
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• pp.163-167
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• 2008

The electronic structure and magnetism of superlattice systems consisted of Heusler compound $Co_2MnSi$ (CMS) and zinc-blende MnAs (MA) are investigated by means of the all-electron full potential linearized augmented plane wave method within the generalized gradient approximation. Four superlattice systems are considered, that is CMS(m)/MA(n), where m and n, being either 2 or 4, denote the number of alternatingly arrayed layers of the compounds in a superlattice along [001] direction. From the calculated total magnetic moments as well as the total density of states, it is found that neither of the four systems is half-metallic. It is also found that the Mn atoms are antiferromagnetically coupled in the systems of CMS2/MA2 and CMS2/MA4. The total and atom-resolved density of states of the four superlattices are compared with those of the bulk $Co_2MnSi$ and MnAs, and the influences of the change in the systems symmetry on the magnetism and half-metallicity are discussed.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.753-759
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• 1996

The artificial construction of well-defined low-dimensional (low-D) quantum structures, such as quantum wire (QWR) still attracts attention of many researchers due to their applications in room-temperature optoelectronic devices. In this work, the migration enhanced epitaxial growth (MEE) and the analysis of InAs/ AlAs QWR are reported. On the vicinal semi-insulating InP substrate of $3^o$ tilted cut from (100) surface towards (010) direction, InAs/ AlAs QWR superlattices have been successfully grown by MEE with the introduction of growth interruption at each shutter operation of MBE cell. The in-situ RHEED analyses show that MEE gives superior step-flow growth (SFG) and sharper interface formation over a conventional MBE growth. We have grown 4 samples in series varying the growth temperature. The QWR samples are analyzed by photoluminescence (PL) and atomic force microscopy (AFM). From the AFM images, we can get the definitely resolved 1-D structures. This structure is believed to be due to the MEE method and its separation is better than any other data from others. We are now studying the dependence of the structure on the growth temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.115-115
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• 2011

Nano hybrid superlattices consisting of organic and inorganic components have great potential for creation of new types of functional material by utilizing the wide variety of properties which differ from their constituents. They provide the opportunity for developing new materials with new useful properties. Herein, we fabricated new type of organic-inorganic nano hybrid superlattice thin films by a sequential, self-limiting surface chemistry process known as molecular layer depostion (MLD) combined with atomic layer deposition (ALD). An organic layer was formed at $150^{\circ}C$ using MLD with repeated sequintial adsorption of Hydroquinone and Titanium tetrachloride. A $TiO_2$ inorganic nanolayer was deposited at the same temperature using ALD with alternating surface-saturating reactions of Titanium tetrachloride and water. Using UV-Vis spectroscopy, we confirmed visible light absorption by LMCT. And FTIR spectroscopy and XPS were employed to determine the chemical composition. Ellipsometry and TEM analysis were also used to confirm linear growth of the film versus number of MLD cycles at all same temperature. In addition, p-n junction diodes domonstrated in this study suggest that the film can be suitable for n-type semiconductors.

• The Journal of the Acoustical Society of Korea
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• v.19 no.5
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• pp.41-45
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• 2000

The effective elastic constants of a single-crystal superlattice film have been determined by two methods based on the velocities of surface acoustic waves (SAW). One method uses formulas to calculate the effective elastic constants of a superlattice from the known elastic constants of the constituent layers. The calculated effective elastic constants are tested by comparing the corresponding SAW velocities calculated for thin-film/substrate systems with the corresponding SAW velocities measured by line-focus acoustic microscopy (LFAM). The other method determines the effective elastic constants of the superlattices by inverting the SAW velocity dispersion data measured by LFAM. The results of both methods applied to a TiN/NbN superlattice film are in good agreement.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.6-11
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• 2001

More than ten kinds of oxide thin films and their heterostructure have been successfully fabricated on SrTiO$_3$(001) substrates by laser molecular beam epitaxy (laser MBE). Measurements of atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM) and X-ray small-angle reflectivity reveal that the surfaces and interfaces are atom-level-smooth. The unit cell layers and the lattice structure are perfect. The electrical and optical properties of BaTiO$_3$-x thin films and BaTiO$_3$/SrTiO$_3$ (BTO/STO) superlattices were examined. The all-perovskite oxide P-N junctions have been successfully fabricated and the better I-V curves were observed.

• Journal of the Korean Magnetics Society
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• v.4 no.4
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• pp.340-346
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• 1994

Change in the electrical resistance of artificial superlattice under two magnetic fields-the main and the secondary magnetic field-has been studied with respect to each magnetic field strength in (200) textured Co/Cu artificial superlattice. When the two magnetic fields were applied in the same direction, lateral shift of the magnetoresistance curve occurred, while splitting phenomenon of the maximum resistance appeared when the two magnetic fields were applied at the right angle. When the angle between the two magnetic fields became $45^{\circ}$ shifting as well as splitting occurred in the magnetoresistance curve. This magnetoresistance behavior with double magnetic fields in the artificial superlattices could be explained with the macroscopic spin alignment model newly suggested in this work.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.325-328
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• 1999

The physical and electrical properties of $\textrm{Ba}_1$ $_{x}\textrm{Sr}_{x}$($\textrm{Mg_{1/3}Nb_{2/3}}$)$\textrm{O}_3$ (x =0, 0.2, 0.4, 0.6, 0.8, 1.0) ceramics were investigated. The Bal $_{x}\textrm{Sr}_{x}$($\textrm{Mg_{1/3}Nb_{2/3}}$)$\textrm{O}_3$ systems were shown that the hexagonally ordered superlattices were increased with increasing x values. The relative densities of all samples were over 97% theoretical densities. The dc resistivities of samples were $10^{13}$ - $10^{14}$$\Omega\textrm{cm}$at room temperature, these values were nearly constant at 130(x=0)-$230^{\circ}C$ (x=l). However, the resistivities of samples decreased rapidly above those temperature and their activation energies were from 1.0 to 1.52 eV. The relative dielectric constant was 33(BMN) and 30.6(SMN) respectively. And the highest value was shown at x=0.4 and the value was 34.3. The temperature coefficient of dielectric constant was -61 ppm/$^{\circ}C$(BMN) and 79 ppm/$^{\circ}C$ (SMN) respectively.

• Journal of Semiconductor Engineering
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• v.1 no.1
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• pp.57-63
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• 2020

Complementary metal-oxide-semiconductor (CMOS) technology is now facing a power scaling limit to increase integration density. Since 1970s, multi-valued logic (MVL) has been considered as promising alternative to resolve power scaling challenge for increasing information density up to peta-scale level by reducing the system complexity. Over the past several decades, however, a power-scalable and mass-producible MVL technology has been absent so that MVL circuit and system implementation have been delayed. Recently, compact MVL device researches incorporating multiple-switching characteristics in a single device such as 2D heterojunction-based negative-differential resistance (NDR)/transconductance (NDT) devices and quantum-dot/superlattices-based constant intermediate current have been actively performed. Meanwhile, wafer-scale, energy-efficient and variation-tolerant ternary-CMOS (T-CMOS) technology has been demonstrated through commercial foundry. In this review paper, an overview for MVL development history including recent studies will be presented. Then, the status and its future research direction of MVL technology will be discussed focusing on the T-CMOS technology for peta-scale information processing in semiconductor chip.

• Journal of Magnetics
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• v.6 no.3
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• pp.80-82
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• 2001

We have investigated magnetism of $Fe_2 /Ir_4$(001) superlattice in terms of a first-principles calculation by using an all-electron full-potential linearized augmented plane-wave (FLAPW) method within the generalized gradient approximation (GGA). We considered two magnetic states, the ferromagnetic (FM) and antiferromagnetic (AFM) coupled states between the Fe layers. It was found that the FM state was energetically more stable than the AFM one by 0.166 eV. Calculated magnetic moments of the Fe layers were, in absolute values, 2.45$\mu_B$ and 2.30 $\mu_B$for the FM and AFM states, respectively. We also found that the Ir layers had very small magnetic moments less than 0.1 $\mu_B$ for both magnetic states. In all the magnetic states, the subinterface Ir layers were coupled antiferromagnetically to the interface Ir layers, while the interface Ir layers were always coupled frerromagnetically to the interface Fe layers. These results contradicted to recent experimental reports of magnetically "dead"Fe layers in Fe/Ir superlattices for which the Fe layer thickness was less than two atomic layers. We attributed that the experimentally observed "dead"Fe layers were due to possible interdiffusion between Ir and Fe layers.en Ir and Fe layers.

• Korean Journal of Materials Research
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• v.14 no.2
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• pp.146-151
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• 2004

We investigated the effects of high potential barriers on the optical characteristics of InAs quantum dots (QDs) by using photoluminescence (PL) and photoreflectance (PR) spectroscopy. A sample with regular InAs quantum dots on GaAs was grown by molecular beam epitaxy (MBE) as a reference. Another InAs QDs sample was embedded in single AlGaAs barriers. On the other hand, a sample with GaAs/AlGaAs superlattice barriers was adopted for comparison with a sample with a single AlGaAs layer. In results, we found that the emission wavelength of QDs was effectively tailored by using high potential barriers. Also, it was found that the optical properties of a sample with QDs embedded in GaAs/AlGaAs superlattices were better than those of a sample with QDs embedded in a single layer of AlGaAs barriers. We believe that GaAs/AlGaAs superlattice could effectively prevent the generation of defects.