• 제목/요약/키워드: Substrate-heating

검색결과 355건 처리시간 0.026초

COG(chip on glass) 구조에서 유리를 투과하는 레이저 조사 방식에 의한 area array type 패키지의 마운팅 공정

  • 이종현;김원용;이용호;김영석
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2001년도 The IMAPS-Korea Workshop 2001 Emerging Technology on packaging
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    • pp.119-126
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    • 2001
  • Chip-on-glass(COG) mounting of area array electronic packages was attempted by heating the rear surface of a contact pad film deposited on a glass substrate. The pads consisted of an adhesion(i.e. Cr or Ti) and a top coating layer(i.e. Ni or Cu) was heated by an UV laser beam transmitted through the glass substrate. The laser energy absorbed on the pad raised the temperature of a solder ball which is in physical contact with the pad, forming a reflowed solder bump. The effects of the adhesion and top coating layer on the laser reflow soldering were studied by measuring temperature profile of the ball during the laser heating process. The results were discussed based on the measurement of reflectivity of the adhesion layer. In addition, the microstructures of solder bumps and their mechanical properties were examined.

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고주파 기판용 PTFE 복합체 형성 압력에 따른 유전 특성 (Dielectric Characteristics of Polytetrafluoroethylene-based Composites for Microwave Substrates with Formation Pressure)

  • 최홍제;전명표;조용수;조학래
    • 한국전기전자재료학회논문지
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    • 제26권6호
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    • pp.429-433
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    • 2013
  • PTFE composites for use of microwave substrate were fabricated by impregnation and heat treatment fabrication with glass fabric. This study shows dielectric properties such as dielectric constant and loss can be controlled by thickness of PTFE composite with change of pressure condition in heating press process. The dielectric constant of the PTFE composites has decreasing tendency as given higher pressure condition. The dielectric loss has similar result too. Especially, the case of the dielectric loss was affected by the condition of pressure at heating press and had the best performance under 3 MPa. In order to see the reason why thickness conditions make different, their microstructures were also observed.

솔더 포일을 이용한 무플럭스 솔더링에 관한 연구 (A Study on Fluxless Soldering using Solder Foil)

  • 신영의;김경섭
    • Journal of Welding and Joining
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    • 제16권5호
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    • pp.100-107
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    • 1998
  • This paper describes fluxless soldering of reflow soldering process using solder foil instead of solder pastes. There is an increasing demand for the reliable solder connection in the recent high density microelectronic components technologies. And also, it is problem fracture of an Ozone layer due to freon as which is used to removal of remained flux on the substrate. This paper discussed joining phenomena, boudability and joining processes of microelectronics devices, such as between outer lead of VLSI package and copper pad on a substrate without flux. The shear strength of joints is 8 to 13 N using Sn/Pb (63/37 wt.%) solder foil with optimum joining conditions, meanwhile, in case of using Sn/In (52/48 wt.%) solder foil, it is possible to bond with low heating temperature of 550 K, and accomplish to high bonding strength of 25N in condition heating temperature of 650K. Finally, this paper experimentally shows fluxless soldering using solder foil, and accomplishes key technology of microsoldering processes.

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Listeria monocytogenes Scott A 의 성장과 열저항성에 미치는 유기산의 영향 (Effect of Organic Acids on Growth and Heat Resistance of Listeria monocytogenes Scott A)

  • 이신호;조현순;김순희
    • 한국식품영양과학회지
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    • 제23권2호
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    • pp.293-297
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    • 1994
  • The effect of organic acids on growth and heat resistance of Listeria monocytogenes Scott A were investigated. The growth of L. monocytogenes was inhibited in Tryptic Soy Broth(TSB) with 0.1 or 0.2% of acetic , tartic , propionic , citric and lactic acid at 35$^{\circ}C$, respectively. The growth of l. Monocytogenes did not occur in TSB with 0.2% of acetic acid or propionic acid during 48h of incubation. The heat resistance of L.monocytogenes was affected by kind of organic acid, ph and heating substrate. L.monocytogenes showed more heat resistant in TSB with various organic acids than in 0.1M sodium phosphate with the same organic acids. Heat resistance decreased as pH of heating substrate decreased . Surface-adherent microcolony was more heat resistant than planktonic cell of L. monocytogenes. Propionic and lactic acids more affected on heat resistance of L.monocytogenes than acetic , tartaric and citric acids.

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Gate dielectric SiO2 film deposition on poly Silicon using UV-excited ozone gas without heating substrate.

  • Kameda, Naoto;Nishiguchi, Tetsuya;Morikawa, Yoshiki;Kekura, Mitsuru;Nonaka, Hidehiko;Ichimura, Shingo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.915-918
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    • 2007
  • We have grown $SiO_2$ film on a polycrystalline Si layer using excited ozone gas, which is produced by ultra-violet light irradiation to ozone gas, without heating substrate. The obtained $SiO_2$ film shows dielectric properties comparable to the device quality films measured at the MIS capacitor configuration.

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Statistical Modeling of the Pretilt Angle Control in Nematic Liquid Crystal using In-situ Photoalignment Method on Plastic Substrate

  • Kang, Hee-Jin;Lee, Jung-Hwan;Yun, Il-Gu;Seo, Dae-Shik
    • Transactions on Electrical and Electronic Materials
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    • 제7권3호
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    • pp.145-148
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    • 2006
  • In this study, the response surface modeling of the pretilt angle control using in-situ photoalignment method with oblique UV exposure .on plastic substrate is investigated. The pretilt angle is the main factor to determine the alignment of the liquid crystal display. The response surface model is used to analyze the variation of the pretilt angle on the various process conditions. Heating temperature and UV exposure time are considered as input factors. The liquid crystal (LC) pretilt angle increased with increasing heating temperature and UV exposure time. The analysis of variance is used to analyze the statistical significance and the effect plots are also investigated to examine the relationship between the process parameters and the response.

ICP-CVD를 이용한 $SnO_2$ 박막 저온 증착 (Low temperature preparation of $SnO_2$ films by ICP-CVD)

  • Lee, H.Y.;Lee, J.J.
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2007년도 춘계학술발표회 초록집
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    • pp.157-158
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    • 2007
  • Tin oxide films were successfully crystallized without additional heating by inductively coupled plasma assisted chemical vapor deposition (ICP-CVD). The degree of crystallization was affected by the ICP power, hydrogen flow and ion bombardment induced by negative substrate bias. The substrate temperature was increased only up to $150^{\sim}180^{\circ}C$ by plasma heating, which suggests that the formation of $SnO_2$ crystalswas caused by enhanced reactivity of precursors in high density plasma. The hardness of deposited tin oxide films ranged from 5.5 to 11GPa at different hydrogen flow rates.

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유연성 전자소자 적용을 위한 BNO박막의 저온화학기상증착 (Low Temperature Chemical Vapor Deposition of BNO Thin Films for Flexible Electronic Device Applications)

  • 전상용;성낙진;윤순길
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.42-42
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    • 2007
  • In the future, electronic components will be integrated on flexible polymer substrates and then miniaturized by thin films using suitable thin film technologies. In this article, the concept of a room temperature CVD is demonstrated using $Bi_3NbO_7$ (BNO) films with a cubic fluorite structure and their structural and electrical properties were investigated in films deposited without substrate heating. Effects of substrate temperature on electrical properties of BNO films were also studied. Films deposited without substrate heating (real temperature of $50^{\circ}C$) show partially crystallized BNO single phases with grain size of approximately 6.5 nm. Their dielectric and leakage properties are comparable to those of films deposited by pulsed laser deposition at room temperature. The concept of room temperature CVD will become a new paradigm in the deposition of dielectric thin films for flexible electron device applications.

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Room Temperature Preparation of Poly-Si Thin Films by IBE with Substrate Bias Method

  • Cho, Byung-Yoon;Yang, Sung- Chae;Han, Byoung-Sung;Lee, Jung-Hui;Yatsui Kiyoshi
    • Transactions on Electrical and Electronic Materials
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    • 제6권2호
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    • pp.57-62
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    • 2005
  • Using intense pulsed ion beam evaporation technique, we have succeeded in the preparation of poly crystalline silicon thin films without impurities on silicon substrate. Good crystallinity and high deposition rate have been achieved without heating the substrate by using lEE. The crystallinity of poly-Si film has been improved with the high density of the ablation plasma. The intense diffraction peaks of poly-Si thin films could be obtained by using the substrate bias system. The crystallinity and the deposition rate of poly-Si thin films were increased by applying (-) bias voltage for the substrate.