• Journal of Powder Materials
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• v.8 no.4
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• pp.245-252
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• 2001

Recent remarkable progress in the semiconductor industry has promoted smaller size of semiconductor chips and increased amounts of heat generation. So, the demand for a substrate material to meet both the characteristics of thermal expansion coefficient and heat radiation has been on the increase. Under such conditions, tungsten(W)-copper(Cu) has been proposed as materials to meet both of the above characteristics. In the present study, the W-10wt.%Cu powders were synthesised by the mixing and hydrogen reduction of the starting mixture materials such as W-Cu, $W-CuCl_2$and $WO_3-CuCl_2$ in order to obtain the full densification. The W-10wt.%Cu produced by hydrogen reduction showed the higher interparticle friction than the simple mixed W-10wt%Cu because of the W agglomerates. In the dilatometric analysis the W-10wt.%Cu prepared from the $W-CuCl_2$was largely shrank by heating up $1400^{\circ}C$ at the constant heating rate of $5^{\circ}C$/min. The possibility of application of metal injection molding (MIM) was also investigated for mass production of the complex shaped W-Cu parts in semiconductor devices. The relationship between the temperature of molding die and the pressure of injection molding was analyzed and the heating up stage of 120-$290^{\circ}C$ in the debinding process was controlled for the most suitable MIM condition.

• Transactions of the Society of Information Storage Systems
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• v.2 no.2
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• pp.100-104
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• 2006

Stamper surface temperature is very critical in replicating the high density optical disc substrates using injection molding as the pit or land/groove patterns on the optical disc substrate have decreased due to the rapid increase of areal density. During the filling stage, the polymer melt in the vicinity of the stamper surfaces rapidly solidifies and the solidified layer generated during polymer filling greatly deteriorates transcribability and fluidity of polymer melt. To improve transcribability and fluidity of polymer melt, stamper surface temperature should be controlled such that the growth of the solidified layer is delayed during the filling stage. In this study, the effect of heating on replication process was simulated numerically. Then, an injection mold equipped with instant active heating system was designed and constructed to raise the stamper surface temperature over the glass transition temperature during filling stage of the injection molding. Also, the closed loop controller using the Kalman filter and the linear quadratic Gaussian regulator was designed. As a result. the stamper surface temperature was controlled according to the desired reference stamper surface temperature.

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.201-207
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• 2018

Infrared(IR) heating has many advantages, such as energy efficiency, reduced heating time, cleanliness, equipment compactness, high drying rate and easy automation. These features of IR heating provide widely industrial applications, such as surface heat treatment in semiconductor fabrication, thermoforming of polymers, drying and disinfection of food products, heating to metal forging, and drying of wet materials. In this study, the characteristics of a protected gold mirror were examined by spectrophotometer and the lifetime of the coating layers were evaluated by a cross-cutting method and salt spray test. The effects of manufacturing conditions on the protected gold mirror were seen and remedies for these effects were noted in order to improve the properties of the protected gold mirror in the drying process. The reflectance and lifetime of the protected gold mirror was influenced by manufacturing conditions, such as surface roughness and forming conditions of the anti-oxide layer, the adhesion layer, the reflecting layer and the protection layer. The results of this study showed that the protected gold mirror manufactured using a buffing method for pre-treatment resulted in the most effective reflectance. In addition, $Al_2O_3$ coating on an Al substrate as an anti-oxide layer was more effective than the anodizing process in the test of reflectance. Furthermore, the protected gold mirror manufactured by layers forming of various materials resulted in the most effective reflectance and lifetime when coated with $Al_2O_3$ as the anti-oxide layer, coated Cr as the adhesion layer, and coated $MgF_2$ as the protection layer.

• Food Science and Biotechnology
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• v.14 no.6
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• pp.732-737
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• 2005

The combinational effect of gamma irradiation and moist heating on the trypsin inhibitor activity (TIA) in soaked and dried soybeans was evaluated by measuring the inhibition using N-benzoyl-DL-arginine-p-nitroanilide (BAPNA) as substrate. Gamma irradiation significantly decreased the TIA level in soybean at doses above 5 kGy, and the $ID_{50}$ (the gamma irradiation dose required to reach 50% inhibition) value for TIA was 13.53 kGy. Soaking prior to gamma irradiation significantly lowered the $ID_{50}$ to 8.44 kGy, and the soaking process enhanced the efficiency to inactivate TIA by as much as 48%. When soaking prior to gamma irradiation was followed by subsequent mild heating ($60^{\circ}C$) process, the $IT_{50}$ (heating time required to reach the 50% inhibition of TIA) value at even 1 kGy (5.28 min) was greatly reduced by over 50% compared to the level for the no-soaking process. In addition, the activation energy of soaking prior to gamma irradiation at 1 kGy was 2.45 kcal/mole, which was also about 50% lower than the 5.10 kcal/mole of dried soybean gamma-irradiated. Based on these results, soaking prior to gamma irradiation is an effective method for TIA inhibition. Furthermore, a combination of two or more processing methods such as soaking, heating and gamma irradiation is much more effective than any single processing method.

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.185-187
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• 2012

Ga doped ZnO (GZO)/copper (Cu) bi-layered film was deposited on glass substrate by RF and DC magnetron sputtering and then the effect of the Cu bottom layer on the optical, electrical and structural properties of GZO films were considered. As-deposited 100 nm thick GZO films had an optical transmittance of 82% in the visible wavelength region and a sheet resistance of 4139 ${\Omega}/{\Box}$, while the GZO/Cu film had optical and electrical properties that were influenced by the Cu bottom layer. GZO films with 5 nm thick Cu film show the lower sheet resistance of 268 ${\Omega}/{\Box}$ and an optical transmittance of 65% due to increased optical absorption by the Cu metallic bottom layer. Based on the figure of merit, it can be concluded that the thin Cu bottom layer effectively increases the performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.124-124
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• 2009

We observed the changes of crystal structure of Rubrene (5,6,11,12-tetraphenylnaphthacene) polycrystal thin films at various in situ substrate temperature and process by scanning electron microscope(SEM), x-ray diffraction (XRD) and near-field microwave microprobe (NFMM). Amorphous rubrene thin film was initially obtained on 200 nm thick $SiO_2/Si$ substrate at 35 $^{\circ}C$ in a vacuum evaporation but in situ long time postannealing at the temperature 80 $^{\circ}C$ transformed the amorphous phase into crystalline. Four heating conditions are followed : (a) preheating (b) annealing (c) preheating, annealing (d) preheating, cooling(35 $^{\circ}C$), annealing. We have obtained the largest polycrystal disk in sample (c). But the highest crytallity and conductivity of the rubrene thin films were obtained in sample (d).

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.178.1-178.1
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• 2015

In and Ga doped ZnO (IGZO) thin films were prepared by radio frequency magnetron sputtering without intentional substrate heating on glass substrate and TiO2-deposited glass substrates to consider the effect of a thin TiO2 buffer layer on the optical and electrical properties of the films. The thicknesses of the TiO2 buffer layer and IGZO films were kept constant at 5 and 100 nm, respectively. Since the IGZO/TiO2 bi-layered films show the higher FOM value than that of the IGZO single layer films, it is supposed that the IGZO/TiO2 bi-layered films will likely perform better in TCO applications than IGZO single layer films.

• Journal of the Korean Vacuum Society
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• v.2 no.4
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• pp.480-485
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• 1993

Factros considered building the magnetron sputtering system for TFT LCD (thin film transistor liquid crystal display0 metallization were thin film thichnes uniformity, temperature uniformity and the pressure gradient of sputtering gas flow in vacuum chamber, base pressure, and the stability fo the carrier moving . The system was consisted of a deposition chamber, a pre-heating chamber, a RF-precleaning chamber and a load/unload lock chamber. The system was designed to handle a substrate with dimension of 400$\times$400mm. The temperautre uniformity of a heater table developed showed $250 ^{\circ}C\pm$5% accuracyon the substrate glass. A base pressure of 1.8 $\times$10-7 torr was obtained after 24 hours pumping with a cryo pump. After an aluminum target was installed in a sputtering source and the film wa sdeposited on the glass, the uniformity, reflectivity and sheet resistance of the deposited film were measured.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.10
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• pp.88-95
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• 2006

Cold gas dynamic spray is a relatively new coating process by which coatings can be produced without significant heating during the process. Cold-spray uses supersonic gas flow to carry metallic powders to the substrate. Its low process temperature can minimize thermal stress and also reduce the deformation of the substrate. Most researches on cold-spray have focused on micro scale coating, but in this study macro scale deposition was conducted. Properties of aluminum layer by cold-spray deposition such as coefficient of thermal expansion (CTE), modulus of elasticity. hardness, and electric conductivity were measured. The results showed that properties of aluminum layer by cold-spray deposition were different from properties of pure aluminum and aluminum alloy.

• Journal of the Korean institute of surface engineering
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• v.25 no.6
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• pp.287-292
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• 1992

Silicon nitride thin film (SiNx) was deposited onto the 3inch silicon wafer using an electron cyclotron resonance (ECR) plasma apparatus. The thin films which were deposited by changing the SiH4N2 gas flow rate ratio at 1.5mTorr without substrate heating were analyzed through the x-ray photo spectroscopy (XPS) and ellipsometer measurements, etc. Silicon nitride thin films prepared by the electron cyclotron resonance plasma chemical vapor deposition method at low substrate temperature (<10$0^{\circ}C$) exhibited excellent physical and electrical properties. The very uniform and good quality silicon nitride thin films were obtained. The characteristics of electron cyclotron resonance plasma were inferred from the analyzed results of the deposited films.