• 제목/요약/키워드: Substrate-bias effect

검색결과 147건 처리시간 0.032초

ITiO 박막의 morphology에 미치는 기판바이어스 전압 효과 (Effect of substrate bias voltage on the morphology of ITiO thin film)

  • 카오미드;김태우;성열문;박차수;곽동주
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2011년도 제42회 하계학술대회
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    • pp.1461-1462
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    • 2011
  • In this paper, in order to obtain the excellent transparent conducting film with low resistivity and high optical transmittance for dye sensitized solar cell, ITiO thin films were deposited on Corning glass substrate by rf magnetron sputtering method. The effects of the discharge power and gas pressure on the electrical and optical properties were investigated experimentally. Particularly in order to lower the electrical resistivity, the effect of heat treatment and bias voltage on the morphological properties of ITiO thin film were also studied and discussed. The concentration ratio (%) for In, Ti, and O was 27 : 2 : 42. The electrical resistivity of $2{\times}10^{-4}{\Omega}{\cdot}cm$ and 90% of optical transmittance were obtained under the conditions of 5mTorr of gas pressure, 300W of discharge power, $300^{\circ}C$ of substrate temperature.

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p-채널 Poly-Si TFT s 소자의 Hot-Carrier 효과에 관한 연구 (A Study on the Hot-Carrier Effects of p-Channel Poly-Si TFT s)

  • 진교원;박태성;백희원;이진민;조봉희;김영호
    • 한국전기전자재료학회논문지
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    • 제11권9호
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    • pp.683-686
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    • 1998
  • Hot carrier effects as a function of bias stress time and bias stress consitions were syste-matically investigated in p-channel poly-Si TFT s fabricated on the quartz substrate. The device degradation was observed for the negative bias stress, while improvement of electrical characteristic except for subthreshold slope was observed for the positive bias stress. It was found that these results were related to the hot-carrier injection into the gate oxide and interface states at the poly-Si/$SiO_2$interface rather than defects states generation within the poly-Si active layer under bias stress.

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Imprinting of Liquid Crystal Alignment on Polymer Layers

  • Wook, Jung-Jong;Kim, Jae-Hoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.611-614
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    • 2003
  • We have investigated electric field effect on the formation of phase separated composite organic film structure which is utilized by anisotropic phase separation from LC and prepolymer mixtures. Application of bias field resulted in a significant change in liquid crystal alignment between glass substrate and polymer layer. The liquid crystal molecules segregated into the inter-electrodes and formed twisted structure which is the result of imprinting of LC alignment by the bias field on polymer layers during polymerization process.

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적외선 레이저의 간섭현상을 이용한 실리콘 웨이퍼의 온도 측정 (Monitoring of Silicon Wafer Temperature by IR Laser Interfermetry)

  • 김재성;이석현;황기웅
    • 전자공학회논문지A
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    • 제31A권2호
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    • pp.81-87
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    • 1994
  • We used IR laser inteferometric technique for measuring the temperature of wafer during cryogenic ECR etching. Using this technique, the effect of RF bias power and microwave power on the wafer temperature during etching period is investigated. As the RF bias power and microwave power was increased, the temperature of the wafer considerably increased and we concluded that to prevent the increase of substrate temperature during etching period, an adequate wafer cooling is needed.

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낮은 입력 정재파비와 잡음을 갖는 수동 및 능동 바이어스를 사용한 저잡음증폭기에 관한 연구 (LNA Design Uses Active and Passive Biasing Circuit to Achieve Simultaneous Low Input VSWR and Low Noise)

  • 전중성
    • Journal of Advanced Marine Engineering and Technology
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    • 제32권8호
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    • pp.1263-1268
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    • 2008
  • In this paper, the low noise power amplifier for GaAs FET ATF-10136 is designed and fabricated with active bias circuit and self bias circuit. To supply most suitable voltage and current, active bias circuit is designed. Active biasing offers the advantage that variations in the pinch-off voltage($V_p$) and saturated drain current($I_{DSS}$) will not necessitate a change in either the source or drain resistor value for a given bias condition. The active bias network automatically sets a gate-source voltage($V_{gs}$) for the desired drain voltage and drain current. Using resistive decoupling circuits, a signal at low frequency is dissipated by a resistor. This design method increases the stability of the LNA, suitable for input stage matching and gate source bias. The LNA is fabricated on FR-4 substrate with active and self bias circuit, and integrated in aluminum housing. As a results, the characteristics of the active and self bias circuit LNA implemented more than 13 dB and 14 dB in gain, lower than 1 dB and 1.1 dB in noise figure, 1.7 and 1.8 input VSWR at normalized frequency $1.4{\sim}1.6$, respectively.

물리증착법에 의해 제작한 마그네슘 박막의 형성기구와 내식특성 (Formation Mechanism and Corrosion-Resistance of Magnesium Film by Physical Vapour Deposition Process)

  • 이명훈
    • Journal of Advanced Marine Engineering and Technology
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    • 제18권2호
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    • pp.54-63
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    • 1994
  • Mg thin films were prepared on SPCC(cold-rolled steel) substrates by vasuum evapoaration and ion-plating. The influence of argon gas pressure and substrates bias voltage on the crystal orientation and morphology of the film was determined by using X-ray diffraction and scanning electron micrography (SEM), respectively. And the effect of crystal orientation and morphology of the Mg thin films on corrosion behavior was estimated by measuring the anodic polarization curves in deaerated 3% NaCl solution. The crystal orientation of the Mg films deposited at high argon gas pressure exhibited a (002) preferred orientation, regardless of the substrate bias voltage. Film morphology changed from a columnar to a granular structure with the increase of argon gas pressure. The morphology of the films depended not only on argon gas pressure but also bias voltage ; i.e., the effect of increasing bias voltage was similar to that of decreasing argon gas pressure. The influences of argon gas pressure and bias voltage were explained by applying the adsorption inhibitor theory and the sputter theory. And also, this showed that the corrosion resistance of the Mg thin films can be changed by controlling the crystal orientaton and morphology.

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기판 바이어스 DC 전원의 종류와 반응가스 분압비가 3성분계 B-C-N 코팅막의 합성과 마찰 특성에 미치는 영향 (Effects of DC Substrate Bias Power Sources and Reactant Gas Ratio on Synthesis and Tribological Properties of Ternary B-C-N Coatings)

  • 정다운;김두인;김광호
    • 한국표면공학회지
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    • 제44권2호
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    • pp.60-67
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    • 2011
  • Ternary B-C-N coatings were deposited on Si(100) wafer substrate from $B_4C$ target by RF magnetron sputtering technique in $Ar+N_2+CH_4$ gas mixture. In this work, the effect of reactant gas ratio, $CH_4/(N_2+CH_4)$ on the composition, kinds and amounts of bonding states comprising B-C-N coatings were investigated using two different bias power sources of continuous and unipolar DCs. In addition, the tribological properties of coatings were studied with the composition and bonding state of coating. It was found that the substrate bias power had an effect on chemical composition, and all of the obtained coatings were nearly amorphous. Main bonding states of coatings were revealed from FTIR analyses to be h-BN, C-C, C-N, and B-C. The amount of C-C bonging mainly increased with increase of the reactant gas ratio. From our studies, both C-C and h-BN bonding states improved the tribological properties but B-C one was found to be harmful on those. The best coating from tribological points of view was found to be $BC_{1.9}N_{2.3}$ composition.

Cr-Al-N 코팅의 마찰마모 특성에 미치는 공정압력과 바이어스 전압의 영향 (Effect of Working Pressure and Substrate Bias on the Tribology Properties of the Cr-Al-N Coatings)

  • 최선아;김성원;이성민;김형태;오윤석
    • 한국표면공학회지
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    • 제50권6호
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    • pp.473-479
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    • 2017
  • CrN coatings have been used as protective coatings for cutting tools, forming tools, and various tribological machining applications because these coatings have high hardness. Cr-Al-N coatings have been investigated to improve the properties of CrN coatings. Cr-Al-N coatings were fabricated by a hybrid physical vapor deposition method consisting of unbalanced magnetron sputtering and arc ion plating with different working pressure and substrate bias voltage. The phase analysis of the composition was performed using XRD (x-ray diffraction). Cr-Al-N coatings were grown with textured CrN phase and (111), (200), and (220) planes. The adhesion strength of the coatings tested by scratch test increased. The friction coefficient and removal rate of the coatings were measured by a ball-on-disk test. The friction coefficient and removal rate of the coatings decreased from 0.46. to 0.22, and from $2.00{\times}10^{-12}m^2/N$ to $1.31{\times}10^{-13}m^2/N$, respectively, with increasing bias voltage. The tribological properties of the coatings increased with increasing substrate bias voltage.

Effect of Working Pressure and Substrate Bias on Phase Formation and Microstructure of Cr-Al-N Coatings

  • Choi, Seon-A;Kim, Seong-Won;Lee, Sung-Min;Kim, Hyung-Tae;Oh, Yoon-Suk
    • 한국세라믹학회지
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    • 제54권6호
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    • pp.511-517
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    • 2017
  • With different working pressures and substrate biases, Cr-Al-N coatings were deposited by hybrid physical vapor deposition (PVD) method, consisting of unbalanced magnetron (UBM) sputtering and arc ion plating (AIP) processes. Cr and Al targets were used for the arc ion plating and the sputtering process, respectively. Phase analysis, and composition, binding energy, and microstructural analyses were performed using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and field emission scanning electron microscopy (FESEM), respectively. Surface droplet size of Cr-Al-N coatings was found to decrease with increasing substrate bias. A decrease of the deposition rate of Cr-Al-N films was expected due to the increase of substrate bias. The coatings were grown with textured CrN phase and (111), (200), and (220) planes. X-ray diffraction data show that all Cr-Al-N coatings shifted to lower diffraction angles due to the addition of Al. The XPS results were used to determine the $Cr_2N$, CrN, and (Cr,Al)N binding energies. The compositions of the Cr-Al-N films were measured by XPS to be Cr 23.2~36.9 at%, Al 30.1~40.3 at%, and N 31.3~38.6 at%.