• Title/Summary/Keyword: Substrate thickness

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Effect of Indium Zinc Oxide Transparent Electrode on Power Conversion Efficiency of Flexible Dye-Sensitized Solar Cells (플렉시블 염료 감응형 솔라셀의 효율에 미치는 Indium Zinc Oxide 투명전극의 영향)

  • Lee, Do Young;Chung, Chee Won
    • Korean Chemical Engineering Research
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    • v.47 no.1
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    • pp.105-110
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    • 2009
  • IZO thin films have been deposited on poly(ethylene terephthalate) flexible substrate under varying radio frequency (rf) power, process pressure and thickness of IZO films using rf magnetron sputtering under $Ar/O_2$ gas mix. As the process pressure increased, the deposition rate was slightly increased and the transmittance showed little change, but the resistivity was increased. With increasing rf power, the great increase in deposition rate was observed but the transmittance showed a slight change only, and the resistivity was decreased. In addition, an attempt was made to find the optimal thickness of IZO films under varying the thickness of IZO films at the process conditions of 1 mTorr pressure and 90 W rf power, which showed lowest resistivity. IZO thin films with the thickness of $1,500{\AA}$ showed lowest resistivity and also showed highest transmittance around the wavelength zone of the maximum absorption. The power conversion efficiency of solar cells fabricated using various transparent electrodes with different thicknesses were measured and the solar cell with IZO electrode of $1,500{\AA}$ showed the maximum conversion-efficiency of 2.88 %.

Tribology Coating Study of Thick DLC (ta-C) Film (DLC (ta-C) 후막코팅을 위한 트라이볼로지 코팅 연구)

  • Jang, Young-Jun;Kang, Yong-Jin;Kim, Gi Taek;Kim, Jongkuk
    • Tribology and Lubricants
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    • v.32 no.4
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    • pp.125-131
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    • 2016
  • In recent years, thick ta-C coating has attracted considerable interest owing to its existing and potential commercial importance in applications such as automobile accessories, drills, and gears. The thickness of the ta-C coating is an important parameter in these applications. However, the biggest problems are achieving efficient coating and uniformity over a large area with high-speed deposition. Feasibility is confirmed for the ta-C coating thickness of up to 9.0 µm (coating speed: 3.0 µm/h, fixed substrate) using a single FCVA cathode. The thickness was determined using multiple coating cycles that were controlled using substrate temperature and residual stresses. In the present research, we have designed a coating system using FCVA plasma and produced enhanced thick ta-C coating. The system uses a specialized magnetic field configuration with stabilized DC arc plasma discharge during deposition. To achieve quality that is acceptable for use in automobile accessories, the magnetic field, T-type filters, and 10 pieces of a multi-cathode are used to demonstrate the deposition of the thick ta-C coating. The results of coating performance indicate that uniformity is ±7.6 , deposited area is 400 mm, and the thickness of the ta-C coating is up to 5.0 µm (coating speed: 0.3 µm/h, revolution and rotation). The hardness of the coating ranges from 30 to 59 GPa, and the adhesion strength level (HF1) ranges from 20 to 60 N, depending on the ta-C coating.

Synthesis of Electrolyte Films for Low-Temperature Solid Oxide Fuel Cells by Sol-Gel Coating and Their Characteristics (졸-겔 코팅에 의한 저온형 고체산화물 연료저지용 전해질막의 합성 및 특성)

  • 현상훈;김승구;장운석
    • Journal of the Korean Ceramic Society
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    • v.36 no.4
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    • pp.391-402
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    • 1999
  • Characteristics of composite electrolytes which were prepared by coating a thin film of YSZ (yttria sta-bilized zirconia : (ZrO2)0.92 (Y2O3)0.08) on YDC (yttria doped ceria : Ce0.8Y0.2O1.9) with mixed conductivity have been investigated in order to develop the low-temperature solid oxide fuel cell. The thickness (t) of spin-coated YSZ thin films after the heat-treatment at 600$^{\circ}C$ was increased proportionally to the sol con-centrations (C) while the decrease in its thickness with the spin rate ($\omega$) could be expressed in the e-quation of ln t=9.49-0.53 ln $\omega$(0.99mol//s sol conc.) When the sol concentration and the spin rate being less than 0.99 mol/l and higher than 1000 rpm respectively reliable YSZ/YDC composite electrolytes could be obtained by multi-coating although several micro-cracks were observed in singly coated YSZ film surfaces. The dense YSZ film with a 1$\mu\textrm{m}$ thickness was prepared by coating of 0.99 mol/l YSZ sol five-times at 2000 rpm followed by heat-treatment at 1400$^{\circ}C$ for 2h, The adhesion between YSZ film and YDC substrate was found to be very good. The open circuit voltages of H2/O2 single cell with YSZ/YDC composite electrolytes were 0.79∼0.82 V at 800$^{\circ}C$ and 0.75∼0.77V at 900$^{\circ}C$ The open circuit voltage was inversely proportioned to the thickness ratio of YSZ thin film (1$\mu\textrm{m}$) to YDC substrate(0.28-2.22 mm)

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Thickness Dependence of Low-Field Tunnel-Type Magnetoresistance in$La_{2/3}Sr_{1/3}MnO_3SiO_2/Si(100)$ Thin Films ($La_{2/3}Sr_{1/3}MnO_3SiO_2/Si(100)$ 박막의 저-자장 터널형 자기저항변화의 두께 의존성)

  • 심인보;안성용;김철성
    • Journal of the Korean Magnetics Society
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    • v.11 no.3
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    • pp.97-103
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    • 2001
  • Polycrystalline thin films of La$_{2}$3/Sr$_{1}$3/MnO$_3$(LSMO) were prepared by water-based sol-gel processing on thermally oxidized Si(100) substrate. The thickness dependence of the low-field tunnel-type magnetoresistance properties at room temperature was studied. Tunnel-type magnetoresistance at low-field is found to be strongly dependent on film thickness. Maximum value of tunnel-type magnetoresistance of LSMO thin films was appeared at the film thickness of ~1500 $\AA$. This behavior can be explained in terms of dead layer between LSMO thin film and Si(100) substrate and thermal lattice strain effect in the LSMO thin films.

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Effects of Atomic Intermixing of Ta/NiFe Interface on Magnetoresistance and Magnetic Properties in a Ta/NiFe/Cu/NiFe/FeMn/Ta Spin Valve Structure (Ta/NiFe/Cu/NiFe/FeMn/Ta계 스핀밸브 제조시 Ta/NiFe 계면원자섞임이 스핀밸브의 자기저항과 자기적 특성에 미치는 영향)

  • 오세층;이택동
    • Journal of the Korean Magnetics Society
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    • v.8 no.5
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    • pp.288-294
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    • 1998
  • Effect of degree of intermixing at the Ta/NiFe interface induced by varying applied substrate bias voltage during NiFe free layer deposition on change of magnetoresistance in Substrate/Ta/NiFe/Cu/NiFe/FeMn/Ta spin valve multilayers was investigated. It was found that the optimum NiFe free layer thickness showing a maximum MR increase with increasing the bias voltage. The increase of the optimum thickness was due to the increase of the intermixed layer thickness with a bias voltage. The weak ferromagnetic or non ferromagnetic intermixed layer plays as a spin-independent scattering region and does not contribute on spin-dependent scattering. The existence of the intermixed layer was proved by the means of electrical resistivity and magnetization changes. In the present study, the optimum "effective" free layer thickness which gives the highest MR ratio was a constant independent of the magnitude of the bias voltage we have used.have used.

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Properties of Sputter Deposited Cr Thin Film on Polymer Substrate by Glancing Angle Deposition (폴리머 기판에 스퍼터법으로 경사 증착한 Cr박막의 특성)

  • Bae, Kwang-Jin;Choi, In-Kyun;Jeong, Eun-Wook;Kim, Dong-Yong;Lee, Tae-Yong;Cho, Young-Rae
    • Korean Journal of Materials Research
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    • v.25 no.1
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    • pp.54-59
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    • 2015
  • Glancing angle deposition (GLAD) is a powerful technique to control the morphology and microstructure of thin film prepared by physical vapor deposition. Chromium (Cr) thin films were deposited on a polymer substrate by a sputtering technique using GLAD. The change in thickness and Vickers microhardness for the samples was observed with a change in the glancing angle. The adhesion properties of the critical load (Lc) by a scratch tester for the samples were also measured with varying the glancing angle. The critical load, thickness and Vickers microhardness for the samples decreased with an increase in the glancing angle. However, the thickness of the Cr thin film prepared at a $90^{\circ}$ glancing angle showed a relatively large value of 50 % compared to that of the sample prepared at $0^{\circ}$. The results of X-ray diffraction and scanning electron microscopy demonstrated that the effect of GLAD on the microstructure of samples prepared by sputter technique was not as remarkable as the samples prepared by evaporation technique. The relatively small change in thickness and microstructure of the Cr thin film is due to the superior step-coverage properties of the sputter technique.

Effect of poly-Si Thickness and Firing Temperature on Metal Induced Recombination and Contact Resistivity of TOPCon Solar Cells (Poly-Si 두께와 인쇄전극 소성 온도가 TOPCon 태양전지의 금속 재결합과 접촉비저항에 미치는 영향)

  • Lee, Sang Hee;Yang, Hee Jun;Lee, Uk Chul;Lee, Joon Sung;Song, Hee-eun;Kang, Min Gu;Yoon, Jae Ho;Park, Sungeun
    • Current Photovoltaic Research
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    • v.9 no.4
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    • pp.128-132
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    • 2021
  • Advances in screen printing technology have been led to development of high efficiency silicon solar cells. As a post PERx structure, an n-type wafer-based rear side TOPCon structure has been actively researched for further open-circuit voltage (Voc) improvement. In the case of the metal contact of the TOPCon structure, the poly-Si thickness is very important because the passivation of the substrate will be degraded when the metal paste penetrates until substrate. However, the thin poly-Si layer has advantages in terms of current density due to reduction of parasitic absorption. Therefore, poly-Si thickness and firing temperature must be considered to optimize the metal contact of the TOPCon structure. In this paper, we varied poly-Si thickness and firing peak temperature to evaluate metal induced recombination (Jom) and contact resistivity. Jom was evaluated by using PL imaging technique which does not require both side metal contact. As a results, we realized that the SiNx deposition conditions can affect the metal contact of the TOPCon structure.

Property of Nickel Silicides with 10 nm-thick Ni/Amorphous Silicon Layers using Low Temperature Process (10 nm-Ni 층과 비정질 실리콘층으로 제조된 저온공정 나노급 니켈실리사이드의 물성 변화)

  • Choi, Youngyoun;Park, Jongsung;Song, Ohsung
    • Korean Journal of Metals and Materials
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    • v.47 no.5
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    • pp.322-329
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    • 2009
  • 60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.

Nanoparticulate Co-Ferrite Thin Films on Glass Substrate Prepared by Sol-Gel Method (유리기판에 sol-gel법으로 제조된 나노입자 Co-ferrite 박막의 특성)

  • 오영제;최현석;최세영
    • Journal of the Korean Ceramic Society
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    • v.37 no.5
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    • pp.425-431
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    • 2000
  • Cobalt ferrite thin films on Corming glass substrate were fabricated by a sol-gel method. Cobalt ferrite thin films with the grain size of 20-35 nm and thickness of 50nm were obtained. Rapid thermal annealing (RTA) and Annealing processes were adopted for comparison of characteristics of the films. Coercivity values were changed with thermal condition and magnetization values were increased as a function of soaking time. With prolonged soaking time, however, it was decreased because of the diffusion of cations from the glass substrate. The RTA process in preparation of cobalt ferrite thin film was the effective way to prevent and to form a single spinel phase in reduced soaking time. The film heated at 600$^{\circ}C$ for 30 minutes by RTA had coercivity of 2,600 Oe, saturation magnetization 460 emu/㎤, and Mr$.$$\delta$ of 1.43 memu/$\textrm{cm}^2$.

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Effect of Adjustable Antenna Substrate Thickness on Aperture-Coupled Microstrip Antenna

  • Somsongkul, T.;Lorpichian, A.;Janchitrapongvej, K.;Anantrasirichai, N.;Wakabayashi, T.
    • 제어로봇시스템학회:학술대회논문집
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    • 2003.10a
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    • pp.1664-1667
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    • 2003
  • Aperture-coupled microstrip antenna is one type of microstrip antennas. This type of antenna has bandwidth wider than simple microstrip antenna. Herein, we use two substrates, that have the same dielectric constant 2.47 (PTFE-quartz) in which upper substrate is a rectangular patch. The microstrip patch is fed by a microstrip line which is printed on lower substrate, through an aperture or slot in the common ground plane of patch and microstrip feed. This antenna is analyzed by using Finite Difference Time Domain (FDTD) method the specific design frequency 10 GHz and match impedance is 50 ohms. The simulation results of its characteristics are input impedance, return loss, VSWR and radiation patterns respectively.

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