• 제목/요약/키워드: Substrate peak

검색결과 587건 처리시간 0.026초

TIPS-pentacene의 잉크젯 인쇄공정에서 액적의 수와 기판 온도에 따른 OTFTs의 전계이동도 변화 (The Mobility Variation of OTFTs with the Number of TIPS-pentacene Droplets and Substrate Temperature in Ink Jet Printing)

  • 권동훈;박진석;송정근
    • 한국전기전자재료학회논문지
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    • 제26권6호
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    • pp.468-471
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    • 2013
  • In this paper, we analyzed the effects of the number of TIPS-pentacene droplets and also the substrate temperature on the performance of OTFTs. As the number of the droplets increased, the mobility increased and reached the peak value and then reduced at the all temperatures. The peak mobility was $0.14{\pm}0.03cm^2/V{\cdot}sec$ at 3 droplets and $41^{\circ}C$, $0.19{\pm}0.02cm^2/V{\cdot}sec$ at 4 droplets and $46^{\circ}C$, and $0.35{\pm}0.10cm^2/V{\cdot}sec$ at 7 droplets and $51^{\circ}C$. The reason of existence of peak mobility can be found in matching the evaporation of solvent with the velocity of crystal formation. When two parameters were properly matched, the mobility produced the highest.

PECVD에 의한 비정질 불화탄소막의 증착 및 특성분석 (Deposition and Analysis of Fluorinated Amorphous Carbon Thin Films by PECVD)

  • 김호운;신장규;권대혁;서화일
    • 센서학회지
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    • 제13권3호
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    • pp.182-187
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    • 2004
  • The fluorinated amorphous carbon thin films (a-C:F) were deposited by PECVD(plasma enhanced chemical vapor deposition). The precursors were $C_{4}F_{8}$ which had a similar ratio of target film's carbon to fluorine ratio, and $Si_{2}H_{6}$/He for capturing excessive fluorine ion. We varied deposition condition of temperature and working pressure to survey the effect of each changes. We measured dielectric constant, composition, and etc. At low temperature the film adhesion to substrate was very poor although the growth rate was very high, the growth rate was very low at high temperature. The EDS(energy dispersive spectroscopy) result showed carbon and fluorine peak for films and Si peak for substrate. There was no oxygen peak.

ECR-PECVD 방법으로 제작된 DLC 박막의 기판 Bias 전압 효과 (Effect of Substrate Bias Voltage on DLC Films Prepared by ECR-PECVD)

  • 손영호;정우철;정재인;박노길;김인수;김기홍;배인호
    • 한국진공학회지
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    • 제9권4호
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    • pp.328-334
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    • 2000
  • ECR-PECVD 방법을 이용하여 ECR power, $CH_4/H_2$ 가스 혼합비와 유량, 증착시간을 고정시켜놓고 기판 bias 전압을 변화 시켜가면서 DLC 박막을 제작하였고, 제작된 박막의 두께, Raman과 FTIR 스펙트럼 그리고 미소경도 등을 측정 및 분석하여 기판 bias전압에 따른 이온충돌이 박막의 특성 변화에 미치는 영향을 조사하였다. FTIR 분석 결과로부터 기판 bias 전압을 증가시킬수록 이온충돌 현상이 두드러져 탄소와 결합하고 있던 수소원자들의 탈수소화 현상을 확인할 수 있었고, 박막의 두께는 bias 전압을 증가시킬수록 감소되었다. 그리고 Raman 스펙트럼으로부터 Gaussian curve fitting을 통하여 $sp^3$/$sp^2$의 결합수에 비례하는 D와 G peak의 면적 강도비(ID/IG)는 기판 bias 전압을 증가시킬수록 증가하였고, 또한 경도도 증가하였다. 이 결과로부터 본 연구에서 제작된 수소를 함유한 비정질 탄소 박막은 기판 bias 전압의 크기를 증가시킬수록 DLC 특성이 더 향상됨을 알 수 있었다.

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$CuInS_2$ 단결정 박막 성장과 광전기적 특성 (Growth and Optoelectrical Properties for $CuInS_2$ Single Crystal Thin Film)

  • 홍광준;이상열
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.230-233
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    • 2004
  • The stochiometric mix of evaporating materials for the $CuInS_2$ single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the $CuInS_2$ polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.524\;{\AA}$ and $11.142\;{\AA}$, respectively. To obtain the single crystal thin films, $CuInS_2$ mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperature were 640 t and 430 t, respectively and the thickness of the single crystal thin films was $2{\mu}m$. Hall effect on this sample was measured by the method of van dot Pauw and studied on carrier density and temperature dependence of mobility. The carrier density and mobility deduced from Hall data are $9.64{\times}10^{22}/m^3,\;2.95{\times}10^{-2}\;m^2/V{\cdot}s$ at 293 K, respectively The optical energy gaps were found to be 1.53 eV at room temperature. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the thin film, we have found that the values of spin orbit coupling splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 0.0211 eV and 0.0045 eV at 10 K, respectively. From PL peaks measured at 10K, 807.7nm (1.5350ev) mean Ex peak of the free exciton emission, also 810.3nm (1.5301eV) expresses $I_2$ peak of donor-bound exciton emission and 815.6nm (1.5201eV) emerges $I_1$ peak of acceptor-bound exciton emission. In addition, the peak observed at 862.0nm (1.4383eV) was analyzed to be PL peak due to donor-acceptor pair(DAP).

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스퍼터링과 펄스 레이저를 이용하여 $CeO_2$완충층 위에 층착된 $YBa_{2}Cu_{3}O_{7-\delta}$박막의 제작 (Fabrication of Thin $YBa_{2}Cu_{3}O_{7-\delta}$ Films on $CeO_2$Buffered Sapphire Substrate Using Combined Sputter and Pulsed Laser Deposition)

  • 곽민환;강광용;김상현
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.901-904
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    • 2001
  • For the c-axis oriented epitaxial YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin film on r-cut sapphire substrate it is necessary to deposit buffer layers. The CeO$_2$buffer layer was deposited on sapphire substrate using RF magnetron sputtering system. We investigated XRD pattern of CeO$_2$thin films at various sputtering conditions such as sputtering gas ratio, sputtering power, target to substrate distance, sputtering pressure and substrate temperature. The optimum condition was 15 mTorr with deposition pressure, 1:1.2 with $O_2$and Ar ratio and 9cm with target to substrate distance. The CeO$_2$(200) peak was notable for a deposition temperature above 75$0^{\circ}C$. The YBa$_2$Cu$_3$O$_{7-{\delta}}$ was deposited on CeO$_2$buffered r-cut sapphire substrate using pulsed laser ablation. The YBa$_2$Cu$_3$O$_{7-{\delta}}$CeO$_2$(200)/A1$_2$O$_3$thin film was exhibited a critical temperature of 89K.xhibited a critical temperature of 89K.

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Finding interstitial oxygen in an Si substrate during low temperature plasma oxidation

  • Kim, Bo-Hyun;Ahn, Jin-Hyung;Ahn, Byung-Tae
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.690-693
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    • 2003
  • An Si substrate (100) was oxidized at $400^{\circ}C$ in inductively coupled oxygen plasma. Interstitial oxygen was found in the Si substrate at the initial stage of oxidation by IR measurements. An x-ray rocking curve of Si substrates showed a lower peak intensity due to lattice distortion by the interstitial oxygen. The refractive index of thin oxides, below which interstitial oxygen existed in the Si substrate, was smaller than the refractive index of thick oxides, below which no interstitial oxygen existed. The interstitial oxygen was found by plasma oxidation using $O_{2}$ gas and $N_{2}O$ gas. The inductively coupled plasma oxidation using $N_{2}O$ gas was performed by atomic oxygen, not by molecular oxygen, indicating that atomic oxygen in plasma is responsible for the incorporation of interstitial oxygen.

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기판 바이어스 인가에 따른 나노결정질 TiN 코팅 막의 미세구조와 기계적 성질변화 (Microstructure and Mechanical Properties of Nanocrystalline TiN Films Through Increasing Substrate Bias)

  • 전성용
    • 한국세라믹학회지
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    • 제47권6호
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    • pp.479-484
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    • 2010
  • Microstructural and mechanical properties of the TiN films deposited on Si substrates under various substrate bias voltages by a reactive magnetron sputtering have been studied. It was found that the crystallographic texture, microstructural morphology and mechanical property of the TiN films were strongly depended on the substrate bias voltage. TiN films deposited without bias exhibited a mixed (200)-(111) texture with a strong (200) texture, which subsequently changed to a strong (111) texture with increasing bias voltage. It is also observed that the crystallite size decreases with increasing bias voltage, which corresponds to the increasing diffraction peak width of XRD patterns. The average surface roughness was calculated from AFM images of the films; these results indicated that the average surface roughness was increased with an increase in the bias voltage of the coatings.

AlGaN/GaN HFET의 기판에 따른 열효과 분석 모델링 (Thermal Effect Modeling for AIGaN/GaN HFET on Various Substrate)

  • 박승욱;신무환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.221-225
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    • 2001
  • In the paper, we report on the DC and Thermal effect of the GaN based HFET. A physics-based a model was applied and found to be useful for predicting the DC performance and Thermal effect of the GaN based HFET by Various substrate. The performance of device on the sapphire substrates is found to be significantly improve compared with that of a device with an sapphire substrate. The peak drain current of the device achieved at HFET on the SiC substrate

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AlGaN/GaN HFET의 기판에 따른 열효과 분석 모델링 (Thermal Effect Modeling for AlGaN/GaN HFET on Various Substrate)

  • 박승욱;신무환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.221-225
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    • 2001
  • In the paper, we report on the DC and Thermal effect of the GaN based HFET. A physics-based a model was applied and found to be useful for predicting the DC performance and Thermal effect of the GaN based HFET by Various substrate. The performance of device on the sapphire substrates is found to be significantly improve compared with that of a device with an sapphire substrate. The peak drain current of the device achieved at HFET on the SiC substrate

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Au-Te 과 n-GaAs 의 접촉저항 특성 (The characteristics of the specific contact resistance of Au-Te to n-GaAs)

  • 정성훈;송복식;문동찬;김선태
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1995년도 추계학술대회 논문집
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    • pp.63-66
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    • 1995
  • The ohmic characterization of Au/Te/Au/n-GaAs structure is investigated by the application of x-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, the specific contact resistance and I-V measurement. Increasing the annealing temperature, the results of XRD measurement show the sharpening of the Au-Ga peak and the increasing of the intensity of Au peak due to the crystallization. At 400$^{\circ}C$, which is the ohmic onset point, Ga$_2$Te$_3$peak gets evident and GaAs regrowth peak appears for the samples annealed at 500$^{\circ}C$. The variation of shottky contact to ohmic contact is confirmed by the I-V curve transition. The specific contact resistance of 3.8x10$\^$-5/$\Omega$-$\textrm{cm}^2$ is obtained for the sample annealed at 500$^{\circ}C$ and above 600$^{\circ}C$ the specific contact resistance increased due to the decomposition of GaAs substrate.

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