• Title/Summary/Keyword: Substrate cells temperature

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Electrochemical Synthesis of Compound Semiconductor Photovoltaic Materials

  • Yu, Bong-Yeong;Jeon, Byeong-Jun;Lee, Dong-Gyu
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2010.05a
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    • pp.11.1-11.1
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    • 2010
  • As one of the non-vacuum, low temperature fabrication route, electrochemical synthesis has been focused for pursuing the cost-effective pathway to produce high efficiency photovoltaic devices. Especially the availability to form the thin film structure on flexible substrate would be the great advantage of electrochemical process. The successful synthesis of the most favorable absorber materials such as CdTe and CIGS has been reported by many researchers, however, the efficiency of electrochemically synthesized could not exceed that from vacuum process, because of microstructural controllability and compositional variation on devices. In this study, we represent the effect of process parameters on the microstructure and composition of compound semiconductor during the synthesis, and propose the photovoltaic characteristics of electrochemically synthesized solar cells.

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Purification and Characterization of an Intracellular Protease form Pseudomonas carboxydovorans DSM 1227 Grown on Carbon Monoxide

  • Ho, Bae-Ki;Kim, Young-Min
    • Korean Journal of Microbiology
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    • v.30 no.4
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    • pp.299-304
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    • 1992
  • An intracellular protease form cells of Pseudomonas carboxydovorans DSM 1227 grown on carbon monoxide was purified 57-fold in six steps to homogeneity with a yield of 4.3% using azocoll as a substrate. The molecular weight of the enzyme was determined to be 150,000. Sodium dodecyl sulfate-gel electrophoresis revealed the purified enzyme to be a dimer with two identical subunits of molecular weight 72,000. The enzyme was stimulated by $Mg^{2+}$ but was inhibited completely by $Cd^{2+}$ $Fe^{2+}$ $Hg^{2+}$, and $^Zn{2+}$ The enzyme activity was also inhibited by EDTA, EGTA, phenylmethylsulfonyl fluoride, and phenyl glyoxal, but was increased by 1-ethyl-3(dimethyl aminopropyl fluoride, and phenyl glyoxal, but was increased by 1-ethyl-3(dimethyl aminopropyl)carbodiimide, iodoacetamide and dithiothereitol. The optimal pH and temperature for the enzyme reaction were found to be 7-8 and 50.deg.C, respectively. Casein and bovine serum albumin were hydrolyzed by the enzyme, but carbon monoxide dehydrogenase was not.

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Electrical and Optical Properties of $SnO_2$ : F Thin Films by Pyrosol Method (Pyrosol 법에 의한 $SnO_2$ : F 박막의 전기적 광학적 특성)

  • Yoon, Kyung-Hoon;Song, Jin-Soo;Kang, Gi-Hoan
    • Proceedings of the KIEE Conference
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    • 1990.07a
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    • pp.187-190
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    • 1990
  • A new technique is described for developing low-cost $SnO_2$ : F thin films as TCO (Transparent Conducting Oxide) substrate of a-Si solar cells. A novel Pyrosol equipment has been developed, and $SnO_2$ : F thin films have been deposited under the condition of varing dopant concentration, temperature and composition rate of solution. Futhermore, electrical and optical properties of thin films have been measured, and exhibit resistivity of $4.3{\times}10^{-4}{\Omega}$ cm and transmittance of 80% which is almost at the same level as those of $SnO_2$ : F thin films by CVD.

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Dependence of Substrate Type on the Properties of CdS Films deposited by r.f. magnetron sputtering (기판 종류에 따른 스퍼터 증착된 CdS 박막의 구조적, 광학적 특성)

  • Lee, Jae-Hyeong;Choi, Sung-Hun;Jung, Hak-Kee;Lee, Jong-In;Lim, Dong-Gun;Yang, Kea-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.145-146
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    • 2005
  • Cadmium sulphide (CdS) films have been prepared on polycarbonate (PC), polyethylene terephthalate (PET), and Coming 7059 substrates by r.f. magnetron sputtering technique at room temperature. A comparison of the properties of the films deposited on polymer and glass substrates was performed. In addition, the effect of the sputter pressure on the structural and optical properties of these films was evaluated.

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Purification of Chitinase from an Antagonistic Bacterium Bacillus sp.7079 and Pro-Inflammatory Cytokine Gene Expression by PCTC

  • Han, Ok-Kyung;Lee, Eun-Tag;Lee, Young-Sun;Kim, Sang-Dal
    • Journal of Microbiology and Biotechnology
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    • v.13 no.1
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    • pp.77-84
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    • 2003
  • Chitinase was purified from an antagonistic bacterium Bacillus sp. 7079 by ammonium sulfate precipitation, QAE-Sephadex anion exchange chromatography, Sephadex G-100 gel filtration, and SP-Sephadex cation exchange chromatography. The molecula. weight of purified chitinase (PC-1) was approximately 66.5 kDa on SDS-PACE. PC-1 exhibited optimum pH and temperature of pH 7.5 and $45^{\circ}C$, respectively. More than $80\%$ of PC-1 was stable at pH 5.0 to 9.0, and more than $90\%$ at $40^{\circ}C$. $Fe^2+\;and\;Ca^2+$ inhibited the chitinase activity about $20\%$, and EDTA and p-CMB by about $30\%$, whereas $Ag^+$ inhibited the activity up to $65\%$. The $K_m$ value of PC-1 was 1.215 mg/ml with colloidal chitin as a substrate. We also investigated the effect of PC-1 treated chitin (PCTC) on the pro-inflammatory cytokine gene expression in macrophage RAW 264.7 cells. The expression of IL-$1{\alpha}$ and IL-$1{\beta}$ mRNA gene was investigated using reverse transcriptase polymerase chain reaction (RT-PCR). IL-$1{\alpha}$ and IL-$1{\beta}$ mRNA were induced by the treatment of PCTC and chitin only in RAW 264.7 cells. These expressions were induced as early as 2 h and sustained up to 24 h in RAW 264.7 cells. IL-$1{\alpha}$ and IL-$1{\beta}$ mRNA were more strongly expressed by the treatment of PCTC than chitin treatment alone in RAW 264.7 cells.

Impact of Physiological Stresses on Nitric Oxide Formation by Green Alga, Scenedesmus obliquus

  • Mallick, Nirupama;Mohn, Friedrich-Helmuth;Rai, Lalchand;Soeder, Carl-J.
    • Journal of Microbiology and Biotechnology
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    • v.10 no.3
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    • pp.300-306
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    • 2000
  • The rate of apparent nitric oxide (NO) release, as measured in the exhaust gas of green alga, Scenedesmus obliquus, depended on the light intensity and pH. It doubled after lowering the temperature from $25^{\circ}C{\;}to{\;}15^{\circ}C$ and strongly decreased from $35^{\circ}C{\;}to{\;}42^{\circ}C$. The Scenedesmus cells, deficient in nitrogen or phosphorus, demonstrated a significant increase in NO production following their transfer to nitrate- and phosphate-rich media. The addition of herbicides (DCMU and glyphosate) or toxic concentrations of $Cu^{2+}{\;}or{\;}Fe^{3+}$ produced strong NO peaks, resembling those that occurred after sudden darkening. An increase in the $Ni^{2+}$ concentration to 20 ppm resulted in a gradual increase of NO release from the initial ~1.5 ppbv to>20 ppbv, whereas $Cd^{2+}$ instantaneously suppressed the NO by the cultures of Scenedesmus was not altered by L-NNA, an inhibitor of nitric oxide synthase (NOS), or by its substrate, L-arginine. This seems to exclude the role of NOS in the NO formation under study. Accordingly, it can be assumed that the rate of NO formation is mainly a function of dynamic nitrite pool sizes and environmental factors significantly affect the NO production in algae.

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A simple and sensitive assay for chitinolytic activity of the recombinant CHT1 proteins from the hard tick H. longicornis using ethylene glycol chitin (Ethylene glycol chitin을 이용한 진드기 H. longicornis 재조합 CHT1 단백의 키틴분해능 검정 연구)

  • You, Myung-Jo;Fujisaki, Kozo
    • Korean Journal of Veterinary Research
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    • v.43 no.1
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    • pp.145-150
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    • 2003
  • To determine effectively the chitinolytic activity of rCHT1 from the hard tick H. longicornis expressed in baculovirus-mediated Spodoptera frugtperda (Sf) 9 cells, a simple and sensitive assay system was established in solid phase using agarose gel containing ethylene glycol chitin as substrate. The various factors affecting the efficacy of the assay were also investigated. The effects of various temperature, dosages of proteins, pH of media and time courses of reaction were examined to verify the sensitivity of assay for chitinolytic activity of rCHT1 protein. It was found that the optimal reactive conditions were $37^{\circ}C$ of temperature, 12 to 15 hours of reactive times, $0.1{\mu}g$ of protein concentration and pH 5 to 7 of media. Using the assay system designed, the functional activities of H. longicornis rCHT1l protein could be evaluated simply and sensitively.

Effect of Oxygen Pressure on the properties of Ga-doped ZnO Thin Films Prepared by Pulsed Laser Deposition at Low Temperature (PLD로 저온 증착한 Ga-doped ZnO 박막의 산소 분압에 따른 영향)

  • Moon, Sung-Joon;Kim, Ji-Hong;Roh, Ji-Hyung;Kim, Jae-Won;Do, Kang-Min;Moon, Byung-Moo;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.297-297
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    • 2010
  • Transparent conductive Oxide (TCO) is an essential material in the various optoelectronic applications as a transparent electrode, such as solar cells, flat panel displays and organic light emitting diodes. Currently, Indium tin oxide (ITO) is commonly used in industry due to its low electrical resistivity, high transmittance and high adhesion to substrate. However, ITO is expensive and should be prepared at high temperature, which makes it hard to use ITO in flexible devices. In this regard, Ga-doped ZnO is expected as an ideal candidate for replacing ITO.

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Growth and Characterization of Polycrystalline Silicon Films by Hot-Wire Chemical Vapor Deposition (열선 CVD에 의해 증착된 다결정 실리콘 박막의 구조적 특성 분석)

  • Lee, J.C.;Kang, K.H.;Kim, S.K.;Yoon, K.H.;Song, J.;Park, I.J.
    • Journal of the Korean Solar Energy Society
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    • v.21 no.1
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    • pp.1-10
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    • 2001
  • Polycrystalline silicon(poly-Si) films are deposited on low temperature glass substrate by Hot-CVD(HWCVD). The structural properties of the poly-Si films are strongly dependent on the temperature$(T_w)$. The films deposited at high $T_w$ of $2000^{\circ}C$ have superior crystalline proper average lateral grain sizes are larger than $1{\mu}m$ and there are no vertical grain boundaries. The sur of the high $T_w$ samples are naturally textured like pyramid shape. These large grain size and text surface are believed to give high current density when applied to solar cells. However, the poly films are structurally porous and contains high defect density, by which high concentration of C and O resulted within the films by air-penetration after removed from chamber.

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Characterization of carrier transport and trapping in semiconductor films during plasma processing

  • Nunomura, Shota;Sakata, Isao;Matsubara, Koji
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.391-391
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    • 2016
  • The carrier transport is a key factor that determines the device performances of semiconductor devices such as solar cells and transistors [1]. Particularly, devices composed of in amorphous semiconductors, the transport is often restricted by carrier trapping, associated with various defects. So far, the trapping has been studied for as-grown films at room temperature; however it has not been studied during growth under plasma processing. Here, we demonstrate the detection of trapped carriers in hydrogenated amorphous silicon (a-Si:H) films during plasma processing, and discuss the carrier trapping and defect kinetics. Using an optically pump-probe technique, we detected the trapped carriers (electrons) in an a-Si:H films during growth by a hydrogen diluted silane discharge [2]. A device-grade intrinsic a-Si:H film growing on a glass substrate was illuminated with pump and probe light. The pump induced the photocurrent, whereas the pulsed probe induced an increment in the photocurrent. The photocurrent and its increment were separately measured using a lock-in technique. Because the increment in the photocurrent originates from emission of trapped carriers, and therefore the trapped carrier density was determined from this increment under the assumption of carrier generation and recombination dynamics [2]. We found that the trapped carrier density in device grade intrinsic a-Si:H was the order of 1e17 to 1e18 cm-3. It was highly dependent on the growth conditions, particularly on the growth temperature. At 473K, the trapped carrier density was minimized. Interestingly, the detected trapped carriers were homogeneously distributed in the direction of film growth, and they were decreased once the film growth was terminated by turning off the discharge.

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