Growth and Characterization of Polycrystalline Silicon Films by Hot-Wire Chemical Vapor Deposition

열선 CVD에 의해 증착된 다결정 실리콘 박막의 구조적 특성 분석

Polycrystalline silicon(poly-Si) films are deposited on low temperature glass substrate by Hot-CVD(HWCVD). The structural properties of the poly-Si films are strongly dependent on the temperature$(T_w)$. The films deposited at high $T_w$ of $2000^{\circ}C$ have superior crystalline proper average lateral grain sizes are larger than $1{\mu}m$ and there are no vertical grain boundaries. The sur of the high $T_w$ samples are naturally textured like pyramid shape. These large grain size and text surface are believed to give high current density when applied to solar cells. However, the poly films are structurally porous and contains high defect density, by which high concentration of C and O resulted within the films by air-penetration after removed from chamber.