• Journal of the Korean institute of surface engineering
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• v.49 no.3
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• pp.307-315
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• 2016

The properties of AlTiN films by a cathodic arc deposition process have been studied. Oblique angle deposition has been applied to deposit AlTiN films. AlTiN films have been deposited on stainless steel (SUS304) and cemented carbide (WC) at a substrate temperature of $500^{\circ}C$. AlTiN films were analyzed by scanning electron microscopy, glow-discharge light spectroscopy, micro-vickers hardness, and nanoindenter. When applying a current of 50 A to the cathodic arc source, it showed that the density of macroparticle of AlTiN films was 5 lower than other deposition conditions. With the increase of the bias voltage applied to the substrate up to -150 V, the density of macroparticle was decreased. The change of the $N_2$ flow rate during coating process made no influence on the film properties. For the multi-layered films, the film prepared at oblique angle of $60^{\circ}$ showed the highest hardness of 28 GPa and $H^3/E^2$ index of 0.18. AlTiN films have been shown a good oxidation resistance up to $800^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.176-176
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• 2007

Flat-panel direct conversion detectors used in compound substance of semiconductor are being studied for digital x-ray imaging. Recently, such detectors are deposited by physical vapor deposition(PVD) generally. But, most of materials (HgI2, PbI2, TlBr, PbO) deposited by PVD have shown difficult fabrication and instability for large area x-ray imaging. Consequently, in this paper, we propose applicable potentialities for screen printing method that is coated on a substrate easily. It is compared to electrical properties among semiconductors such as $HgI_2$, $PbI_2$, PbO, HgBrI, InI, and $TlPbI_3$ under investigation for direct conversion detectors. Each film detector consists of an ~25 to $35\;{\mu}m$ thick layer of semiconductor and was coated onto the substrate. Substrates of $2cm{\times}2cm$ have been used to evaluate performance of semiconductor radiation detectors. Dark current, sensitivity and physics properties were measured. Leakage current of $HgI_2$ as low as $9pA/mm^2$ at the operation bias voltage of ${\sim}1V/{\mu}m$ was observed. Such a value is not better than PVD process, but it is easy to be fabricated in high quality for large area x-ray Imaging. Our future efforts will concentrate on optimization of growth of film thickness that is coated onto a-Si TFT array.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.356-356
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• 2010

Tribological behaviors of the hard film on soft substrate system were explored using the hard thin film of diamond-like carbon (DLC) coated the soft polymer of polydimethysiloxane (PDMS). A DLC film with the Young's modulus of 100 GPa was coated on PDMS substrate with Young's modulus of 10 MPa using plasma enhanced chemical vapor deposition (PECVD) technique. The deposition time was varied from 10 sec to 10 min, resulting in nanoscale roughness of wrinkle patterns with the thickness of 20 nm to 510 nm, respectively, at a bias voltage of $400\;V_b$, working pressure 10 mTorr. Nanoscale wrinkle patterns with 20-100 nm in width and 10-30 nm height were formed on DLC coating due to the residual stress in compression and difference in Young's modulus. Nanoscale roughness effect on tribological behaviors was observed by performing a tribo-experiment using the ball-on-disk type tribometer with a steel ball of 6 mm in diameter at the sliding speed of 220 rpm, normal load of 1N and 25% humidity at ambient temperature of $25^{\circ}C$. Friction force were measured with respect to thickness change of coated DLC thin film on PDMS. It was found that with increases the thickness of DLC coating on PDMS, the coefficient of friction decreased by comparison to that of the uncoated PDMS. The wear tracks before and after tribo-test were analyzed using SEM and AFM.

• Korean Journal of Materials Research
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• v.29 no.3
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• pp.196-203
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• 2019

We report on the fabrication and characterization of an oxide photoanode with a zinc oxide (ZnO) nanorod array embedded in cuprous oxide ($Cu_2O$) thin film, namely a $ZnO/Cu_2O$ oxide p-n heterostructure photoanode, for enhanced efficiency of visible light driven photoelectrochemical (PEC) water splitting. A vertically oriented n-type ZnO nanorod array is first prepared on an indium-tin-oxide-coated glass substrate via a seed-mediated hydrothermal synthesis method and then a p-type $Cu_2O$ thin film is directly electrodeposited onto the vertically oriented ZnO nanorod array to form an oxide p-n heterostructure. The introduction of $Cu_2O$ layer produces a noticeable enhancement in the visible light absorption. From the observed PEC current density versus voltage (J-V) behavior under visible light illumination, the photoconversion efficiency of this $ZnO/Cu_2O$ p-n heterostructure photoanode is found to reach 0.39 %, which is seven times that of a pristine ZnO nanorod photoanode. In particular, a significant PEC performance is observed even at an applied bias of 0 V vs $Hg/Hg_2Cl_2$, which makes the device self-powered. The observed improvement in the PEC performance is attributed to some synergistic effect of the p-n bilayer heterostructure on the formation of a built-in potential including the light absorption and separation processes of photoinduced charge carriers, which provides a new avenue for preparing efficient photoanodes for PEC water splitting.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.10
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• pp.1126-1135
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• 2007

This paper presents the varactor-tuned miniaturized hairpin tunable filter with a single control voltage. The previously proposed miniaturization method is a very straight-forward method to miniaturize a parallel coupled-line filter. In this paper, the miniaturized hairpin tunable filter is proposed with the constant ratio rule of that the capacitances of the each stage always have constant ratio without any dependency to miniaturized electrical length. To show the validity of the proposed method, a 3rd order 0.5 dB ripple Chebyshev fitter with a center frequency of 900 MHz and a fractional bandwidth(FBW) of 10 % was designed and fabricated. The fabricated filter was based on CER-10 substrate of Taconic Inc. with 1SV277 varactor diode of Toshiba Inc. The center frequency of the fabricated filter can be changed from 606 MHz to 944 MHz, 338 MHz with the control voltage from 0.5 V to 4 V. The insertion loss of the proposed filter is increased with the increment of the control voltage, and the filter characteristics are well reserved expect of slight change of the bandwidth with the various control voltage.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.4
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• pp.36-46
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• 1979

Using N_ Ch silicon gate technology . the capacitors and transistors with various dimenssion were fabricated. Although the applied process was somewhat standard the conditions of ion implantation for the gate were varied by changing the implant energies from 30keV to 60keV for B and from 100 keV to 175keV for P . The doses of the implant also changed from 3 $\times$ 10 /$\textrm{cm}^2$ to 5 $\times$ 10 /$\textrm{cm}^2$ for B and from 4$\times$ 10 /$\textrm{cm}^2$ to 7 $\times$ 10 /$\textrm{cm}^2$ for P . The D. C. parameters such as threshold voltage. substrate doping level, the degree of inversion, capacitance. flat band voltage, depletion layer width, gate oxide thickless, surface states, motile charge density, electron mobility. leakage current were evaluated and also compared with the corresponing theoretical values and / or good numbers for application. The threshold voltages measured using curve tracer and C-V plot gave good agreements with the values calculated from SUPREM II which has been developed by Stanford University process group. The threshold vol tapes with back gate bias were used to calculate the change of the substrate doping level. The measured subthreshold slope enabled the prediction of the degree of inversion The D. C. testing results suggest the realized capacitors and transistors are suited for the memory applications.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.9 s.112
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• pp.860-865
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• 2006

In this paper, a novel tunable inter-digital capacitor using dielectric tunable $Bi_2O_3-ZnO-Nb_2O_5(BZN)$ pyrochlore thin films is proposed. In order to improve the tunability and reduce DC bias voltage using the fringing electric field, the electrodes of the inter-digital capacitor are embedded in the thin film. Designed results using a 2.5 D simulator show that the tunability of the proposed inter-digital capacitor improves by 10 %, compared to the conventional inter-digital capacitor. The proposed IDC, which is based on the simulation results, was fabricated, using the BZN thin film deposited by a reactive RF magnetron sputtering on the on the silicon substrate. The fabricated inter-digital capacitor shows the maximum tunability of 50 % at 5.8 GHz and 18 V DC applied.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.570-574
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• 2010

A diamond-like carbon (DLC) film deposited on a WC disk was investigated to improve disk wear resistance for injection molding of zirconia optical ferrule. The deposition of DLC films was performed using the filtered vacuum arc ion plating (FV-AIP) system with a graphite target. The coating processing was controlled with different deposition times and the other conditions for coating, such as input power, working pressure, substrate temperature, gas flow, and bias voltage, were fixed. The coating layers of DLC were characterized using FE-SEM, AFM, and Raman spectrometry; the mechanical properties were investigated with a scratch tester and a nano-indenter. The friction coefficient of the DLC coated on the WC was obtained using a pin-on-disk, according to the ASTM G163-99. The thickness of DLC films coated for 20 min. and 60 min. was about 750 nm and 300 nm, respectively. The surface roughness of DLC films coated for 60 min. was 5.9 nm. The Raman spectrum revealed that the G peak of DLC film was composed of $sp^3$ amorphous carbon bonds. The critical load (Lc) of DLC film obtained with the scratch tester was 14.6 N. The hardness and elastic modulus of DLC measured with the nano-indenter were 36.9 GPa and 585.5 GPa, respectively. The friction coefficient of DLC coated on WC decreased from 0.2 to 0.01. The wear property of DLC coated on WC was enhanced by a factor of 20.

• Journal of Navigation and Port Research
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• v.27 no.5
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• pp.505-511
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• 2003

In this paper, a driving amplifier stage with 1 Watt output has been designed and fabricated, which is operating at UHF band( 470 ∼ 806 MHz) for digital TV repeater. In the driving amplifier stage, preamplifier and 1 Watt unit amplifier are integrated by one electric substrate which is 2.53 in dielectric constant and 0.8 mm thickness. When the driving amplifier stage is flown by bias voltage of 28 V DC and current of 900 mA. it has the gain of more than 53.5 dB. the gain flatness of $\pm$0.5 dB and return loss of less than -15 dB in 470 ∼ 806 MHz. Also, when two signals at 2 MHz frequency interval are input port into the driving amplifier stage with 1 Watt output, it resulted in excellent characteristics to designed specification with showing intermodulation distortion characteristics of more than 48 dBc.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.06a
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• pp.14-14
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• 2001

Nitride films such as TiN, CrN etc. deposited on glass by PVD processes have been developed for many industrial applications. These nitride films deposited on glass were widely used for not only decorative and optical coatings but also wear and corrosion resistance coatings employed as dies and molds made of glass for the example of lens forming molds. However, the major problem of nitride coatings on glass by PVD process is non-uniform film owing to pin-hole and micro crack. It is estimated that nonuniform coating is influenced by a different surface energy between metal nitrides and glass due to binding states. In this work, therefore, for the evaluation of nucleation and growth mechanism of nitride films on glass TiN and CrN film were synthesized on glass with various nitrogen partial pressure by unbalanced magnetron sputtering. Prior to deposition, for the examination of relationship between surface energy and film microstructure plasma pre-treatment process was carried out with various argon to hydrogen flow rate and substrate bias voltage, duty cycle and frequency by using pulsed DC power supply. Surface energy owing to the different plasma pre-treatment was calculated by the measurement of wetting angle and surface conditions of glass were investigated by X-ray Photoelectron Spectroscopy(XPS) and Atomic Force Microscope(AFM). The microstructure change of nitride films on glass with increase of film thickness were analyzed by X-Ray Diffraction(XRD) and Scanning Electron Microscopy(SEM).