• Proceedings of the Korean Magnestics Society Conference
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• 한국자기학회 1995년도 추계연구발표회 논문개요집
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• pp.52-53
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• 1995

• Proceedings of the KIEE Conference
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1461-1462
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• 2011

In this paper, in order to obtain the excellent transparent conducting film with low resistivity and high optical transmittance for dye sensitized solar cell, ITiO thin films were deposited on Corning glass substrate by rf magnetron sputtering method. The effects of the discharge power and gas pressure on the electrical and optical properties were investigated experimentally. Particularly in order to lower the electrical resistivity, the effect of heat treatment and bias voltage on the morphological properties of ITiO thin film were also studied and discussed. The concentration ratio (%) for In, Ti, and O was 27 : 2 : 42. The electrical resistivity of $2{\times}10^{-4}{\Omega}{\cdot}cm$ and 90% of optical transmittance were obtained under the conditions of 5mTorr of gas pressure, 300W of discharge power, $300^{\circ}C$ of substrate temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제11권9호
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• pp.683-686
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• 1998

Hot carrier effects as a function of bias stress time and bias stress consitions were syste-matically investigated in p-channel poly-Si TFT s fabricated on the quartz substrate. The device degradation was observed for the negative bias stress, while improvement of electrical characteristic except for subthreshold slope was observed for the positive bias stress. It was found that these results were related to the hot-carrier injection into the gate oxide and interface states at the poly-Si/$SiO_2$interface rather than defects states generation within the poly-Si active layer under bias stress.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.611-614
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• 2003

We have investigated electric field effect on the formation of phase separated composite organic film structure which is utilized by anisotropic phase separation from LC and prepolymer mixtures. Application of bias field resulted in a significant change in liquid crystal alignment between glass substrate and polymer layer. The liquid crystal molecules segregated into the inter-electrodes and formed twisted structure which is the result of imprinting of LC alignment by the bias field on polymer layers during polymerization process.

• Journal of the Korean Institute of Telematics and Electronics A
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• 제31A권2호
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• pp.81-87
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• 1994

We used IR laser inteferometric technique for measuring the temperature of wafer during cryogenic ECR etching. Using this technique, the effect of RF bias power and microwave power on the wafer temperature during etching period is investigated. As the RF bias power and microwave power was increased, the temperature of the wafer considerably increased and we concluded that to prevent the increase of substrate temperature during etching period, an adequate wafer cooling is needed.

• Journal of Advanced Marine Engineering and Technology
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• 제32권8호
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• pp.1263-1268
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• 2008

In this paper, the low noise power amplifier for GaAs FET ATF-10136 is designed and fabricated with active bias circuit and self bias circuit. To supply most suitable voltage and current, active bias circuit is designed. Active biasing offers the advantage that variations in the pinch-off voltage($V_p$) and saturated drain current($I_{DSS}$) will not necessitate a change in either the source or drain resistor value for a given bias condition. The active bias network automatically sets a gate-source voltage($V_{gs}$) for the desired drain voltage and drain current. Using resistive decoupling circuits, a signal at low frequency is dissipated by a resistor. This design method increases the stability of the LNA, suitable for input stage matching and gate source bias. The LNA is fabricated on FR-4 substrate with active and self bias circuit, and integrated in aluminum housing. As a results, the characteristics of the active and self bias circuit LNA implemented more than 13 dB and 14 dB in gain, lower than 1 dB and 1.1 dB in noise figure, 1.7 and 1.8 input VSWR at normalized frequency $1.4{\sim}1.6$, respectively.

• Journal of Advanced Marine Engineering and Technology
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• 제18권2호
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• pp.54-63
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• 1994

Mg thin films were prepared on SPCC(cold-rolled steel) substrates by vasuum evapoaration and ion-plating. The influence of argon gas pressure and substrates bias voltage on the crystal orientation and morphology of the film was determined by using X-ray diffraction and scanning electron micrography (SEM), respectively. And the effect of crystal orientation and morphology of the Mg thin films on corrosion behavior was estimated by measuring the anodic polarization curves in deaerated 3% NaCl solution. The crystal orientation of the Mg films deposited at high argon gas pressure exhibited a (002) preferred orientation, regardless of the substrate bias voltage. Film morphology changed from a columnar to a granular structure with the increase of argon gas pressure. The morphology of the films depended not only on argon gas pressure but also bias voltage ; i.e., the effect of increasing bias voltage was similar to that of decreasing argon gas pressure. The influences of argon gas pressure and bias voltage were explained by applying the adsorption inhibitor theory and the sputter theory. And also, this showed that the corrosion resistance of the Mg thin films can be changed by controlling the crystal orientaton and morphology.

• Journal of the Korean institute of surface engineering
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• 제44권2호
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• pp.60-67
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• 2011

Ternary B-C-N coatings were deposited on Si(100) wafer substrate from $B_4C$ target by RF magnetron sputtering technique in $Ar+N_2+CH_4$ gas mixture. In this work, the effect of reactant gas ratio, $CH_4/(N_2+CH_4)$ on the composition, kinds and amounts of bonding states comprising B-C-N coatings were investigated using two different bias power sources of continuous and unipolar DCs. In addition, the tribological properties of coatings were studied with the composition and bonding state of coating. It was found that the substrate bias power had an effect on chemical composition, and all of the obtained coatings were nearly amorphous. Main bonding states of coatings were revealed from FTIR analyses to be h-BN, C-C, C-N, and B-C. The amount of C-C bonging mainly increased with increase of the reactant gas ratio. From our studies, both C-C and h-BN bonding states improved the tribological properties but B-C one was found to be harmful on those. The best coating from tribological points of view was found to be $BC_{1.9}N_{2.3}$ composition.

• Journal of the Korean institute of surface engineering
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• 제50권6호
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• pp.473-479
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• 2017

CrN coatings have been used as protective coatings for cutting tools, forming tools, and various tribological machining applications because these coatings have high hardness. Cr-Al-N coatings have been investigated to improve the properties of CrN coatings. Cr-Al-N coatings were fabricated by a hybrid physical vapor deposition method consisting of unbalanced magnetron sputtering and arc ion plating with different working pressure and substrate bias voltage. The phase analysis of the composition was performed using XRD (x-ray diffraction). Cr-Al-N coatings were grown with textured CrN phase and (111), (200), and (220) planes. The adhesion strength of the coatings tested by scratch test increased. The friction coefficient and removal rate of the coatings were measured by a ball-on-disk test. The friction coefficient and removal rate of the coatings decreased from 0.46. to 0.22, and from $2.00{\times}10^{-12}m^2/N$ to $1.31{\times}10^{-13}m^2/N$, respectively, with increasing bias voltage. The tribological properties of the coatings increased with increasing substrate bias voltage.

• Journal of the Korean Ceramic Society
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• 제54권6호
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• pp.511-517
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• 2017

With different working pressures and substrate biases, Cr-Al-N coatings were deposited by hybrid physical vapor deposition (PVD) method, consisting of unbalanced magnetron (UBM) sputtering and arc ion plating (AIP) processes. Cr and Al targets were used for the arc ion plating and the sputtering process, respectively. Phase analysis, and composition, binding energy, and microstructural analyses were performed using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and field emission scanning electron microscopy (FESEM), respectively. Surface droplet size of Cr-Al-N coatings was found to decrease with increasing substrate bias. A decrease of the deposition rate of Cr-Al-N films was expected due to the increase of substrate bias. The coatings were grown with textured CrN phase and (111), (200), and (220) planes. X-ray diffraction data show that all Cr-Al-N coatings shifted to lower diffraction angles due to the addition of Al. The XPS results were used to determine the $Cr_2N$, CrN, and (Cr,Al)N binding energies. The compositions of the Cr-Al-N films were measured by XPS to be Cr 23.2~36.9 at%, Al 30.1~40.3 at%, and N 31.3~38.6 at%.