• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.7-11
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• 2011

Sapphire substrate was patterned by a selective chemical wet etching technique, and GaN/InGaN structures were grown on this substrate by MOVPE (Metal Organic Vapor Phase Epitaxy). The surface of grown GaN on patterned sapphire substrate (PSS) has good morphology and uniformity. The patterned sapphire substrate LED showed better light output than conventional LED that improvement 50%. We think these results come from enhancement of internal quantum efficiency by decrease of threading dislocation and increase of light extraction efficiency. Also these LED showed more uniform emission distribution in angle than conventional LED.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.71-71
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• 2010

Copper oxide thin films were deposited on the p-type Si(100) by r.f. magnetron sputtering as a function of different substrate temperature. The deposited copper oxide thin films were investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM), spectroscopic ellipsometry (SE), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The SEM and SE data show that the thickness of the copper oxide films was about 170 nm. AFM images show that the surface roughness of copper oxide films was increased with increasing substrate temperature. As the substrate temperature increased, monoclinic CuO (111) peak appeared and the crystal size decreased while the monoclinic CuO (-111) peak was independent on the substrate temperature. The oxidation states of Cu 2p and O 1s resulted from XPS were not affected on the substrate temperature. The contact angle measurement was also studied and indicated that the surface of copper oxide thin films deposited high temperature has more hydrophobic surface than that of deposited at low temperature.

• Journal of ILASS-Korea
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• v.28 no.3
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• pp.113-118
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• 2023

This study investigates the evaporation characteristics of paired sessile droplets on a heated substrate. In particular, the evaporation time and contact line behaviors were analyzed based on the droplet-to-droplet distance and substrate temperature. The contact line behavior and volume variations were visualized using the shadowgraph method. It was observed that the contact diameter and contact angle exhibited similar behavior for both single and paired droplets regardless of the droplet-to-droplet distance and substrate temperature. The paired droplets demonstrated a longer evaporation time than the single droplet due to the vapor accumulation between the droplets. Furthermore, the scaled lifetime, defined as the ratio of evaporation time between paired and single droplets, increased as the droplet-to-droplet distance decreased and decreased as the substrate temperature increased, attributed natural convection.

• Korean Journal of Optics and Photonics
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• v.24 no.5
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• pp.271-278
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• 2013

The effective reflection coefficients of an obliquely incident wave on a multi-layered substrate coated with a uniaxially anisotropic alignment layer are derived. The effective reflection coefficients as well as explicit ellipsometric expressions are provided as a function of film constants of multiple layers together with magnitude of anisotropy, direction of optic axis, and thickness of the alignment layer. It is expected that by adapting these expressions to the conventional modelling technique, the ordinary refractive index, the extra-ordinary refractive index, the azimuth angle and the tilt angle of the optic axis, and the thickness of the aligned surface can be determined simultaneously together with the thickness and volume fraction of each layer beneath the alignment layer.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2198-2200
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• 2000

This paper reports on the measurement of angle between micro mirror and substrate in. the Micro Optical Cross Connect(MOXC). MOXC consists of beam collimators and $N{\times}N$ micro mirrors that are fabricated by using MEMS technology. Using subpixel level image processing, it is possible to measure the angle with the resolution of 0.27$^{\circ}$.

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.337-345
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• 2009

When the drill hole diameter for the package substrate is under $100{\mu}m$, the smear in the drill hole cannot be eliminated by wet desmear process only. We intended to change the substrate's hydrophobic characteristics to hydrophilic characteristics by adapting the atmospheric pressure plasma prior to the wet desmear process. Atmospheric pressure plasma process was made as the inline type equipment which is adequate for the package substrate's manufacturing process and remote DBD type electrodes were used for the equipment. As the result of atmospheric pressure plasma processing, the contact angle of the substrate was enhanced from 71 degree to 30 degree. Dielectric film thickness, drill hole diameter and surface roughness were measured to evaluated the characteristics of the wet desmear process in case of plasma processing and in case of none. By the measurement, it was analyzed that the process uniformity within the whole panel was largely enhanced. Also, it was verified that the smear in the drill hole was eliminated efficiently which was analyzed by the SEM image of the drill hole.

• Korean Journal of Materials Research
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• v.25 no.1
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• pp.54-59
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• 2015

Glancing angle deposition (GLAD) is a powerful technique to control the morphology and microstructure of thin film prepared by physical vapor deposition. Chromium (Cr) thin films were deposited on a polymer substrate by a sputtering technique using GLAD. The change in thickness and Vickers microhardness for the samples was observed with a change in the glancing angle. The adhesion properties of the critical load (Lc) by a scratch tester for the samples were also measured with varying the glancing angle. The critical load, thickness and Vickers microhardness for the samples decreased with an increase in the glancing angle. However, the thickness of the Cr thin film prepared at a $90^{\circ}$ glancing angle showed a relatively large value of 50 % compared to that of the sample prepared at $0^{\circ}$. The results of X-ray diffraction and scanning electron microscopy demonstrated that the effect of GLAD on the microstructure of samples prepared by sputter technique was not as remarkable as the samples prepared by evaporation technique. The relatively small change in thickness and microstructure of the Cr thin film is due to the superior step-coverage properties of the sputter technique.

• Korean Journal of Optics and Photonics
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• v.8 no.1
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• pp.31-36
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• 1997

We measured refractive indices and thicknesses of SiO$_2$ thin films that have been plated on LCD glass substrate for the purpose of preventing the out-diffusion of sodium ions. The best experimental condition to determine refractive index and thickness of SiO$_2$ thin film by using ellipsometry is searched for, where ⅰ) the film thickness is increased uniformly by 20 $\AA$ from 0 $\AA$ to the period thickness while the angle of incidence is fixed and ⅱ) the angle of incidence is increased uniformly by 1$^{\circ}$ from 45$^{\circ}$ to 70$^{\circ}$ while the film thickness is fixed. We estimated the errors in determining the refractive index and thickness by comparing the measurement error of $\Delta$ and Ψ with the calculated one. The ellipsometric constants of SiO$_2$ thin film on LCD glass substrate are measured at several angle of incidence around the Brewster angle, which is the best angle if the experimental error of ellipsometer is not sensitive to the incident angle. Also the best fit refractive index and thickness of SiO$_2$ thin film to these ellipsometric constants measured at several angle of incidenc eas well as the best fit ones to the SE data are obtained using regressional analysis.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.36-41
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• 2004

A method to measure the interfacial toughness of film/substrate by nanoindenter is proposed. As the thickness of the film decreases, the measurement of the interfacial toughness requires the more sophisticated equipment such as nanoindenter. In this study, the nanoindenter is applied to the substrate near the interface of film/substrate in the direction perpendicular to the normal of the interface, causing the cohesive fracture of the substrate, followed by the interfacial cracking. The specimen of Cu($0.56 {\mu}m$)/Si(530 ${\mu}$) are made by sputtering the copper onto the silicon wafer. By scratching the copper surface, we can make the easy interfacial cracking during the nanoindentation. It is found that the averaged values of the interfacial toughness of the Cu/Si is $0.664{\pm}0.3\;J/m^2$ . The phase angle of the specimen in this study is ${\psi}{\simeq}-36.8^{\circ}$, computed by the method of Suo and Hutchinson.[1]

• Proceedings of the KSME Conference
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• 2002.08a
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• pp.491-494
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• 2002

To assess the electrostatic interaction of surfaces at the triple contact line, the electrostatic field is analyzed by using the finite element method. The Helmholtz free energy is used as a functional which should be minimized under an equilibrium condition. The numerical results are compared with the nonlinear analytical solution for a two-dimensional charged interface and linear solution for a wedge shaped geometry, which shows fairly good agreement. The method is applied to the analysis of electrostatic influence on the contact angle on a charged substrate. The excess free energy found to increase drastically as the contact angle approaches to zero. This excess free energy Plays an opposite role to the Primary electrocapillary effect, as the contact angle gets smaller. This enables an alternative explanation for the contact-angle saturation phenomenon occurring in electrical control of surface tension and contact angle.