• Title/Summary/Keyword: Sublimation process

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A Study on the Optimization of Inkjet Proofing for High Quality Offset Color Printing (고품질 오프셋 컬러인쇄를 위한 잉크젯 방식 교정인쇄에 최적화에 관한 연구)

  • Kim, Sung-Su;Kang, Sang-Hoon
    • Journal of the Korean Graphic Arts Communication Society
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    • v.24 no.2
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    • pp.69-78
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    • 2006
  • Proofing is one of the inspection operations of printing and can be considered a process control step. The three main kinds of proofs are press proofs, photomechanical proofs, and digital proofs. Photomechanical and digital proofs are also generally refered to as "off-press" proofs. Off-press color proofs are more economical than press proofs. Digital proofs offer fast production time along with a much lower cost per page. Hard-copy digital proofs can be output using thermal transfer printers, ink jet printers, and color laser copiers, as well as dye sublimation and electrophotographic technology. Ink jet method is commonly using because of the reasonal price. But ink jet system is difficult to reproduce an exact color proof. This research was carried out for the purpose of optimization of ink jet color proofing, using two kinds of ink jet printers with 6 colors (C, M, Y, K, mC, mM) and 4 colors (C, M, Y, K) system.

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A study on the etch pits morphology and the defect in as-grown SiC single crystals (SiC 단결정의 etch pit 형상과 결함에 관한 고찰)

  • 강승민
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.10 no.6
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    • pp.373-377
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    • 2000
  • For 6H-SiC single crystals which was obtained by sublimation growth (modified Lely process), the relation between the defects and the etch pits to be formed at the site of dislocations were discussed. Typical hexagonal etch pits were formed on (0001) basal plane. The similar hexagonal etch pit shapes were formed on the site of micropipe defects and it was realized that internal planar defects was formed with the same matrix crystal structure as grown crystals, through the observation of the etching morphology at those internal defects.

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Enhanced sticking coefficient in the BSCCO single crystal grown by the sputtering method (스퍼터링 법에 의한 BSCCO 단결정 성장의 부착 계수 향상)

  • Cheon, Min-Woo;Yang, Sung-Ho;Park, Yong-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.585-586
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    • 2005
  • BSCCO thin films were fabricated by an ion beam sputtering method with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element in BSCCO film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about $730^{\circ}C$ and decreased linearly over about $730^{\circ}C$. In contrast, Sr and Ca, displayed no such remarkable temperature dependence. This behavior of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of Bi2O3. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

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Effect of Solidification Condition of Sublimable Vehicles on the Pore Characteristics in Freeze Drying Process (동결건조 공정에서 동결제의 응고조건이 기공특성에 미치는 영향)

  • Suk, Myung-Jin;Kim, Ji Soon;Oh, Sung-Tag
    • Journal of Powder Materials
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    • v.21 no.5
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    • pp.366-370
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    • 2014
  • The present study demonstrates the effect of solidification condition on the pore structure in freeze drying process using the slurries of CuO/sublimable vehicles. Camphene and Camphor-45 wt% naphthalene based slurries with 14 vol% CuO powder were frozen into a mold at $-25^{\circ}C$, followed by sublimation at room temperature. The green bodies were hydrogen-reduced and sintered at $500^{\circ}C$ for 1 h. The porous Cu specimen, frozen the CuO/camphene slurry into the heated mold of the upper part, showed large pores with unidirectional pore channels and small pores in their internal wall. Also, it was observed that the size of large pores was decreasing near the bottom part of specimen. The change of pore structure depending on the freezing condition was explained by the nucleation behavior of camphene crystals and rearrangement of solid powders during solidification. In case of porous Cu prepared from CuO/Camphor-naphthalene system, the pore structure exhibited plate shape as a replica of the original structure of crystallized vehicles with hypereutectic composition.

Passivation Layers for Organic Thin-film-transistors

  • Lee, Ho-Nyeon;Lee, Young-Gu;Ko, Ik-Hwan;Kang, Sung-Kee;Lee, Seong-Eui;Oh, Tae-Sik
    • Transactions on Electrical and Electronic Materials
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    • v.8 no.1
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    • pp.36-40
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    • 2007
  • Inorganic layers, such as SiOxNy and SiOx deposited using plasma sublimation method, were tested as passivation layer for organic thin-film-transistors (OTFTs). OTFTs with bottom-gate and bottom-contact structure were fabricated using pentacene as organic semiconductor and an organic gate insulator. SiOxNy layer gave little change in characteristics of OTFTs, but SiOx layer degraded the performance of OTFTs severely. Inferior barrier properties related to its lower film density, higher water vapor transmission rate (WVTR) and damage due to process environment of oxygen of SiOx film could explain these results. Polyurea and polyvinyl acetates (PVA) were tested as organic passivation layers also. PVA showed good properties as a buffer layer to reduce the damage come from the vacuum deposition process of upper passivation layers. From these results, a multilayer structure with upper SiOxNy film and lower PVA film is expected to be a superior passivation layer for OTFTs.

Effect of Powder Characteristic and Freeze Condition on the Pore Characteristics of Porous W (텅스텐 다공체의 기공특성에 미치는 분말특성 및 동결조건의 영향)

  • Kwon, Na-Yeon;Oh, Sung-Tag
    • Journal of Powder Materials
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    • v.19 no.4
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    • pp.259-263
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    • 2012
  • Dependence of the freeze-drying process condition on microstructure of porous W and pore formation mechanism were studied. Camphene slurries with $WO_3$ contents of 10 vol% were prepared by milling at $50^{\circ}C$ with a small amount of dispersant. Freezing of a slurry was done in Teflon cylinder attached to a copper bottom plate cooled at $-25^{\circ}C$. Pores were generated subsequently by sublimation of the camphene during drying in air for 48 h. The green body was hydrogen-reduced at $800^{\circ}C$ for 30 min, and sintered in the furnace at $900^{\circ}C$ for 1 h. After heat treatment in hydrogen atmosphere, $WO_3$ powders were completely converted to metallic W without any reaction phases. The sintered samples showed large pores with the size of about $70{\mu}m$ which were aligned parallel to the camphene growth direction. Also, the internal wall of large pores and near bottom part of specimen had relatively small pores with dendritic structure due to the growth of camphene dendrite depending on the degree of nucleation and powder rearrangement in the slurry.

EXPERIMENTAL STUDY OF OPTIMUM DRYING CONDITION IN THE PROCESS OF SPRAY FREEZE DRYING (분무동결건조과정의 최적 건조조건 도출에 관한 실험적 연구)

  • Park, Kyong-Won;Song, Chan-Ho;Song, Chi-Sung
    • Proceedings of the SAREK Conference
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    • 2008.06a
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    • pp.1321-1326
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    • 2008
  • A study on the heat and mass transfer for the drying time in spray freezing drying process was experimentally presented in this paper. A spray freezing dryer for the production of an inhalable powder medicine is developed and an albumin solution as protein specimen is adopted. The freeze-drying for the albumin solution is tested in three different height of the particles piled up in a tray such as 2 mm, 5 mm, 7 mm, and the drying time is estimated as 10 h, 15 h, 22 h. From this results, the correlation is suggested and the drying time with various height of the particles piled up in a tray can be estimated. The assessment on the drying time is conducted thought a microbalance and the rate of water content is measured. The results based on temperature and weight are compared. The difference of the results happens due to the heat transfer from the lateral side of the vial. It is thought that the better estimation in drying time can be predicted by considering the heat transfer effect.

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The Study of the color reproducibility and the color fastness of Nano Inkjet DTP(Digital Textile Printing) - Focusing on 2012-2013 F/W COLOR TREND - (나노 잉크젯 DTP(Digital Textile Printing)의 컬러 재현성 및 내구성에 관한 연구 - 2012-2013 F/W COLOR TREND를 중심으로 -)

  • Kim, So-Jin;Choi, Kyoung-Me
    • Journal of Fashion Business
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    • v.16 no.2
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    • pp.138-150
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    • 2012
  • Nano Inkjet DTP technology, a new technology introduced recently, can be applied to various types of fabric, and pre-treatment process can be omitted, which makes the whole printing process compact. Some important factors for DTP are color difference between the color selected by the designer on PC and the color on the final product and durability of the final fabrics. In this study, the twenty-three trend colors of 2012-2013 F/W suggested by PeclersParis have been picked to be printed on cotton, silk and polyester fabrics, then K/S and ${\Delta}E$ value and color fastness were measured. The results show that dyeability of fabric is varied for each color group, and that also tone of color affect to dyeability when measured for colors in the same group. In general, for all fabric, light fastness, washing fastness and color fastness to sublimation are outstanding. However, because of poor rubbing fastness, additional treatment to fix colorant on fabric is required.

Fabrication and Properties of Porous Tungsten by Freeze-Drying Process (동결건조 공정을 이용한 텅스텐 다공체의 제조 및 특성)

  • Lee, Young-Sook;Oh, Sung-Tag
    • Korean Journal of Materials Research
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    • v.21 no.9
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    • pp.520-524
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    • 2011
  • Porous W with controlled pore characteristics was fabricated by a freeze-drying process. $WO_3$ powder and camphene were used as the source materials of W and sublimable vehicles, respectively. Camphene slurries with $WO_3$ contents of 10 and 15 vol% were prepared by milling at $50^{\circ}C$ with a small amount of oligomeric polyester dispersant. Freezing of a slurry was done in a Teflon cylinder attached to a copper bottom plate cooled at $-25^{\circ}C$ while the growth direction of the camphene was unidirectionally controlled. Pores were generated subsequently by sublimation of the camphene during drying in air for 48 h. The green body was hydrogen-reduced at $800^{\circ}C$ for 30 min and sintered in a furnace at $900^{\circ}C$ for 1 h under a hydrogen atmosphere. Microstructural observation revealed that all of the sintered samples were composed of only W phase and showed large pores which were aligned parallel to the camphene growth direction. The porosity and pore size increased with increasing camphene content. The difference in the pore characteristics depending on the slurry concentration may be explained by the degree of powder rearrangement in the slurry. The results strongly suggest that a porous metal with the required pore characteristics can be successfully fabricated by a freeze-drying process using metal oxide powders.

Organic TFT 특성향상을 위한 절연막의 표면처리 및 소자 특성 변화

  • Kim, Yeong-Hwan;Kim, Byeong-Yong;O, Byeong-Yun;Park, Hong-Gyu;Im, Ji-Hun;Na, Hyeon-Jae;Han, Jeong-Min;Seo, Dae-Sik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.158-158
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    • 2009
  • This paper focuses on improving organic thin film transistor (OTFT) characteristics by controlling the self-organization of pentacene molecules with an alignable high-dielectric-constant film. The process, based on the growth of pentacene film through high-vacuum sublimation, is a method of self-organization using ion-beam (IB) bombardment of the $HfO_2/Al_2O_3$ surface used as the gate dielectric layer. X-ray photoelectron spectroscopy indicates that the IB raises the rate of the structural anisotropy of the $HfO_2/Al_2O_3$film, and X-ray diffraction patterns show the possibility of increasing the anisotropy to create the self-organization of pentacene molecules in the first polarized monolayer. An effective mobility of $2.3{\times}10^{-3}cm^2V^{-1}s^{-1}$ was achieved, which is significantly different from that of pentacene films that are not aligned. The proposed OTFT devices with an ultrathin $HfO_2$ structure as the gate dielectric layer were operated at a gate voltage lower than 5 V.

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