• 한국전기전자재료학회논문지
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• 제20권12호
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• pp.1056-1061
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• 2007

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. The surface morphology was dramatically changed with varying the SiC/Al ratio. When the SiC/Al ratio of 90/1 was used, the step bunching was not observed in this magnification and the ratio of SiC/Al is an optimized range to grow of p-type SiC epitaxial layer. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. 4H-SiC MESFETs haying a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized. It was confirmed that the increase of the negative voltage applied on the gate reduced the drain current, showing normal operation of FET device.

• 천문학회보
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• 제44권2호
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• pp.60.4-60.4
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• 2019

Small bodies in the solar system are pristine leftovers of planetesimals since the formation epoch (~4.6 Gyr ago). After the formation, icy planetesimals have been preserved in the distant cold place beyond 30 au (i.e., Trans-Neptunian region) until recently without any catastrophic processes but have just been injected into inner region (<~5 au from the Sun) to be observed as comets. On the contrary, asteroids are rocky primitive objects (although some of them contains icy volatiles) distributing in the mainbelt between Mars and Jupiter orbits. Because of frequent encounters in the mainbelt, asteroids have experienced a number of repeated impacts until the present day. Namely, it is important to investigate thermal alternation process of cometary volatiles and refractories in the solar radiation field, whereas collisional and subsequence phenomena of asteroidal bodies. Although recent spacecraft observations revealed the physical natures on the surfaces of comets and asteroids, their interiors still remain largely unexplored. It is likely that a sudden brightening of a comet is associated with rapid sublimation of internal CO and CO2 or phase transition of amorphous H2O. An episodic dust ejection from an asteroid is causally related to an impact among asteroids, sudden sublimation of remaining subsurficial volatiles, etc. Because these transient phenomena provide rare opportunities to investigate their interiors, immediate observations using any optical instruments are particular important. In my presentation, I will review some examples of such transient phenomena in the solar system and propose possible collaborative research using the Korean Small Telescope Network.

• 수면정신생리
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• 제20권2호
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• pp.82-87
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• 2013

목 적 : 방어기제는 성격의 영향을 받으며, 방어기제로부터 파생된 행동들을 관찰함으로써 추정 및 측정이 가능하다. 현재까지 방어기제와 일주기 선호 사이의 관계에 대해서는 밝혀진 바가 없었다. 본 연구에서는 일 의학전문대학원 학생들을 대상으로 방어기제와 일주기 선호 사이의 관계를 알아보고자 했다. 방 법 : 일 의학전문대학원 학생 148명을 대상으로 자가설문조사를 시행하였다. 아침형-저녁형 질문지, Beck 우울 척도-2, 한국판 방어유형질문지를 이용하였다. 결 과 : 저녁형과 아침 중간형은 공상, 수동 공격, 소비, 승화, 억제의 방어기제들에서 유의한 차이를 보였다(p<0.05). 다중회귀분석에서 소비가 높을 수록(beta=-0.262, p= 0.001), 승화가 적을 수록(beta=0.185, p=0.023), 여자보다는 남자(beta=0.175, p=0.031)가 저녁형을 유의하게 예측하였다. 결 론 : 본 연구에서는 일 의학전문대학원 학생들에서 소비와 승화의 방어기제가 일주기 선호와 관계된다는 것이 밝혀졌다. 그러나 단면 연구로부터의 결과이므로 둘 사이의 인과 관계에 대해서는 알 수가 없다. 환경 요인을 조정하여 일주기 선호가 바뀔 때 방어기제의 변화가 동반되는지에 대한 후속 연구가 가능할 것이다.

• 한국결정성장학회지
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• 제25권3호
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• pp.85-92
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• 2015

SiC 결정은 전력반도체 소자용 소재로서 지금까지 외국은 물론 국내에서도 많은 연구가 이루어지고 있으며, 지금까지 고주파 유도가열 방식을 이용한 승화법으로 성장되어 왔다. 그러나, SiC 단결정은 결정 성장 계면에서의 온도 안정성에 따라 쉽게 다른 다형으로 성장하기 때문에, 고품질의 결정을 얻기 위해서는 결정성장 계면에서의 안정적인 온도 구배가 필요하다. 본 논문에서는 저항가열 방식을 이용한 승화법 성장 장치를 이용하여 종자결정을 사용하지 않은 상태에서 SIC 다결정상을 성장하여 보고, 성장 양상에 대하여 고찰하고자 하였다. SiC 다결정상은 성장속도 0.02~0.5 mm/hr로 성장되었으며, 성장된 SiC 다결정상의 두께는 0.25 mm~0.5 mm이고, 이 때 도가니 하부의 온도는 $2100{\sim}2300^{\circ}C$, 성장 압력은 10~760 torr의 범위에서 조절되었다. 성장된 다결정상 결정은 광학현미경으로 관찰하여, 성장 거동을 고찰하였다.

• 한국세라믹학회지
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• 제53권6호
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• pp.597-603
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• 2016

Tantalum carbide, which is one of the ultra-high temperature ceramics, was deposited on graphite by low pressure chemical vapor deposition from a $TaCl_5-C_3H_6-Ar-H_2$ mixture. To maintain a constant $TaCl_5/C_3H_6$ ratio during the deposition process, $TaCl_5$ powders were continuously fed into the sublimation chamber using a screw-driven feeder. Sublimation behavior of $TaCl_5$ powder was measured by thermogravimetric analysis. TaC coatings have various phases such as $Ta+{\alpha}-Ta_2C$, ${\alpha}-Ta_2C+TaC_{1-x}$, and $TaC_{1-x}$ depending on the powder feeding methods, the $C_3H_6/TaCl_5$ ratio, and the deposition temperatures. Near-stoichiometric TaC was obtained by optimizing the deposition parameters. Phase compositions were analyzed by XRD, XPS, and Raman analysis.

• 한국결정성장학회지
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• 제5권1호
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• pp.50-59
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• 1995

자체 제작된 승화법에 의한 결정성장 장치를 이용하여, 6H-SiC 단결정을 성장하였다. Acheson 법으로 얻어진 6H 결정을 seed substrate로 사용하였으며, SiC source 로부터 분해된 승화 증기가 seed상에서 육성되도록 흑연 도가니내의 온도구배 및 성장온도와 압력을 유기적으로 조절하였다. 성장 전 graphite 도가니 구성부와 SiC 원료에 대한 purification을 행함으로써 성장결정 내부로의 불순물 혼입이 억제되도록 하엿다. 결정 성장시의 육성조건으로 도가니 바닥의 온도는 $2300~2400^{\circ}C$였으며, 성장로 내부의 분위기 압력은 200~400 torr에서 양질의 단결정을 얻을 수 있었다. 성장된 결정을 두께 1.5 mm의 wafer로 제작하여 XRD와 optical microscope로 관찰하였고, FT-IR spectrum으로 분석하였다.

• 한국전기전자재료학회논문지
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• 제21권9호
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• pp.795-800
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• 2008

A sublimation method using the SiC seed crystal and SiC powder as the source material is commonly adopted to grow SiC bulk single crystal. However, it has proved to be difficult to achieve the high quality crystal and the process reliability because SiC single crystal should be grown at very high temperature in closed system. The present research was focused to improve SiC crystal quality grown by PVT method through using the new inner guide tube. The new inner guide tube was designed to prevent the enlargement of polycrystalline region into single crystalline region and to enlarge the diameter of SiC single crystal. The 6H-SiC crystals were grown by conventional PVT process. The seed adhered on seed holder and the high purity SiC source materials are placed on opposite side in sealed graphite crucible surrounded by graphite insulation. The SiC bulk growth was conducted around 2300 $^{\circ}C$ of growth temperature and 50 mbar in an argon atmosphere of growth pressure. The axial thermal gradient across the SiC crystal during the growth was estimated in the range of 15${\sim}$20 $^{\circ}C$/cm.

• Journal of Advanced Marine Engineering and Technology
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• 제25권6호
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• pp.1341-1352
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• 2001

Vacuum freeze drying process by which frozen water in a drying material is removed sublimation under vacuum condition, is now applied to various industrial field such as the manufacturing and packaging of pharmaceuticals in pharmaceutical industry, the drying of bio- products in bio-technology industry, the treatment of various quality food stuff in food technology, and so on. The Knowledge about the heat and mass transfer characteristics related with the vacuum freeze drying process is crucial to improve the efficiency of the process as well as the quality of dried products. In spite of increasing needs for understanding of the process, the research efforts in this fields are still insufficient. In this paper, a numerical code that can predict primary drying in a vial is developed based on the finite volume method with a moving grid system. The calculation program can handle the axis- symmetric and multi-dimensional characteristics of heat and mass transfer of the vial freeze drying process. To demonstrated the usefulness of the present analysis, a practical freeze drying of skim Milk solution in a vial is simulated and various calculation results are presented.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 제2회 학술대회 논문집 일렉트렛트 및 응용기술전문연구회
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• pp.59-63
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$ This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.750-753
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• 2002

The chemical vapor condensation process of Parylene-N thin films was investigated and applied to the passivation of the organic light emitting diodes (OLEDs). The effects of process variables on the deposition rate were studied, and it was found that the deposition rate of Parylene increases with increasing precursor sublimation temperature but decreases with increasing substrate temperature. The Parylene film was used as a passivation layer for OLEDs, and as a result, the lifetime of the passivated OLEDs was increased by a factor of about 2.3 compared with that of non-passivated OLEDs.