• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.22 no.11
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• pp.1071-1077
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• 2012

Low frequency noises(up to about 200 Hz) such as booming are mainly caused by particular modes, and in general the solutions may be found based on mode controls where conventional methods such as FEM can be used. However, at higher frequencies between 0.3~1 kHz, as the number of modes rapidly increases, radiation characteristics from structures, performances of damping sheets and sound packages may be more crucial rather than particular modes, and consequently the conventional FEM may be less practical in dealing with this kinds of structure-borne problems. In this context, so-called 'mid-frequency simulation model' based on FE-SEA hybrid method is studied and validated to reduce noise in this frequency region. Energy transmission loss(i.e. air borne noise) is also studied. A dash panel component is chosen for this study, which is an important path that transmits both structure-borne and air borne energies into the cavity. Design modifications including structural modifications, attachment of damping sheets and application of different sound packages are taken into account and the corresponding noise characteristics are experimentally identified. It is found that the dash member behaves as a noise path. The damping sheet and sound packages have similar influences on both sound radiation and transmission loss. The comparison between experiments and simulations shows that this model could be used to predict the tendency of noise improvement.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.389-389
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• 2012

Molybdenum is one of the most important materials used as a back ohmic contact for $Cu(In,Ga)(Se,S)_2$ (CIGS) solar cells because it has good electrical properties as an inert and mechanically durable substrate during the absorber film growth. Sputter deposition is the common deposition process for Mo thin films. Molybdenum thin films were deposited on soda lime glass (SLG) substrates using direct-current planar magnetron sputtering technique. The outdiffusion of Na from the SLG through the Mo film to the CIGS based solar cell, also plays an important role in enhancing the device electrical properties and its performance. The structure, surface morphology and electrical characteristics of Mo thin films are generally dependent on deposition parameters such as DC power, pressure, distance between target and substrate, and deposition temperature. The aim of the present study is to show the resistivity of Mo layers, their crystallinity and morphologies, which are influenced by the substrate temperature. The thickness of Mo films is measured by Tencor-P1 profiler. The crystal structures are analyzed using X-ray diffraction (XRD: X'Pert MPD PRO / Philips). The resistivity of Mo thin films was measured by Hall effect measurement system (HMS-3000/0.55T). The surface morphology and grain shape of the films were examined by field emission scanning electron microscopy (FESEM: Hitachi S-4300). The chemical composition of the films was obtained by the energy dispersive X-ray spectroscopy (EDX). Finally the optimum substrate temperature as well as deposition conditions for Mo thin films will be developed.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.335-335
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• 2011

Instability of a thin film attached to a compliant substrate often leads to emergence of exquisite wrinkle patterns with length scales that depend on the system geometry and applied stresses. However, the patterns that are created using the current techniques in polymer surface engineering, generally have low aspect ratio of undulation amplitude to wavelength, thus, limiting their application. Here, we present a novel and effective method that enables us to create wrinkles with a desired wavelength and high aspect ratio of amplitude over wavelength as large as to 2.5:1. First, we create buckle patterns with high aspect ratio of amplitude to wavelength by deposition of an amorphous carbon film on a surface of a soft polymer poly(dimethylsiloxane) (PDMS). Amorphous carbon films are used as a protective layer in structural systems and biomedical components, due to their low friction coefficient, strong wear resistance against, and high elastic modulus and hardness. The deposited carbon layer is generally under high residual compressive stresses (~1 GPa), making it susceptible to buckle delamination on a hard substrate (e.g. silicon or glass) and to wrinkle on a flexible or soft substrate. Then, we employ glancing angle deposition (GLAD) for deposition of a high aspect ratio patterns with amorphous carbon coating on a PDMS surface. Using this method, pattern amplitudes of several nm to submicron size can be achieved by varying the carbon deposition time, allowing us to harness patterned polymers substrates for variety of application. Specifically, we demonstrate a potential application of the high aspect wrinkles for changing the surface structures with low surface energy materials of amorphous carbon coatings, increasing the water wettability.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.106-106
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• 2011

Recently, zinc oxide (ZnO) thin films have attracted great attention as a promising candidate for various electronic applications such as transparent electrodes, thin film transistors, and optoelectronic devices. ZnO thin films have a wide band gap energy of 3.37 eV and transparency in visible region. Moreover, ZnO thin films can be deposited in a poly-crystalline form even at room temperature, extending the choice of substrates including even plastics. Therefore, it is possible to realize thin film transistors by using ZnO thin films as the active channel layer. In this work, we investigated influence of oxygen partial pressure on ZnO thin films and fabricated ZnO-based thin film transistors. ZnO thin films were deposited on glass substrates by using a pulsed laser deposition technique in various oxygen partial pressures from 20 to 100 mTorr at room temperature. X-ray diffraction (XRD), transmission line method (TLM), and UV-Vis spectroscopy were employed to study the structural, electrical, and optical properties of the ZnO thin films. As a result, 80 mTorr was optimal condition for active layer of thin film transistors, since the active layer of thin film transistors needs high resistivity to achieve low off-current and high on-off ratio. The fabricated ZnO-based thin film transistors operated in the enhancement mode with high field effect mobility and low threshold voltage.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.185-185
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• 2011

ZnTe semiconductor is very attractive materials for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. Another application to photovoltaics proved that ZnTe is useful for the production of high-efficiency multi-junction solar cells [2,3]. By using the pulse laser deposition system, ZnTe thin films were deposited on ZnO thin layer, which is grown on (0001) Al2O3substrates. To produce the plasma plume from an ablated ZnO and ZnTe target, a pulsed (10 Hz) YGA:Nd laser with energy density of 95 mJ/$cm^2$ and wavelength of 266 nm by a nonlinear fourth harmonic generator was used. The laser spot focused on the surface of the ZnO and ZnTe target by using an optical lens was approximately 1 mm2. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen gas flow was controlled around 3 sccm by using a mass flow controller system. During the ZnTe deposition, the substrate temperature was $400^{\circ}C$ and the ambient gas pressure was $10^{-2}$ Torr. The structural properties of the samples were analyzed by XRD measurement. The optical properties were investigated by using the photoluminescence spectra obtained with a 325 nm wavelength He-Cd laser. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system.

• Applied Chemistry for Engineering
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• v.23 no.1
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• pp.65-70
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• 2012

Structural changing materials which can induce the physical deformation of materials are interesting research topics with various potential applications. Particularly, light among many driving mechanisms is a non-contact energy source, hence the light-responsive system can be used where non-destructive, local irradiation, and remote control is needed. Here, a mainchain azobenzene polymer is synthesized and its physical and optical properties are observed and compared to that of a polymer having a light-responsive azobenzene moiety on its side chain. Further dispersion onto polyvinylalcohol hydrogel is made and its dual stability and actuation are observed upon UV-visible light irradiation. Extended azobenzene polymer blend films show an anisotropic light-actuation with non-polarized UV light at room temperature. This physical shape change is quite reversible and occurs at lower temperature than that of any other reported systems including liquid crystalline elastomers. It is successfully demonstrated that the simple physical azobenzene/polymer blending has a very good actuation compared to that of LCEs which need an elaborate chemical design and it can be further used in the areas requiring a dimensional shape change.

• Journal of the Korean Ceramic Society
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• v.32 no.12
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• pp.1392-1400
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• 1995

WC-10wt%Co-Al2O3 ceramic composites, using both the SHS (Self-propagating High Temperature Synthesis) synthesized WC powder method and commercial WC powder, were prepared by varing WC-Co/Al2O3 vol% ratio and sintering temperature (1350℃∼1650℃) for 1 hr in Ar atmosphere. Mechanical characterization has been investigated by Instron meterial testing system and Vicker's hardness test. Compositional and structural chracterizations were carried out by energy-dispersive analysis of X-ray (EDAX) data and scanning electron microscope (SEM). Electrical characterization was carried out by the electrical resistivity measurement using 4-point probe method. As sintering period increased and Al2O3 contents decreased in WC-10wt%Co-Al2O3 ceramic composite, shrinkage and relative density increased, resulting in maximum values at 1600℃. Also the major matrix phase changed with increasing Al2O3 content from 0 to 100 vol%. It was also identified by SEM, EDAX, and electrical resistivity measurement. Based on the results of analysis of flexural strength, toughness and hardness, the mechanical properties of WC-10wt%Co-Al2O3 ceramic composites using the SHS synthesized WC powder were better than those WC-10wt%Co-Al2O3 ceramic composites using commercial WC powder because WC-10wt%Co-Al2O3 ceramic composites using the SHS synthesized WC powder were sintered very well due to small initial particle size. By the addition of 40 vol% Al2O3 [60(WC=10wt%Co)-40Al2O3], it was possible to obtain a proper candidate as a superalloy.

• Journal of the Society of Naval Architects of Korea
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• v.29 no.2
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• pp.115-122
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• 1992

A sandwich element is a special Hybrid structural form of the composite construction, which is consisted of three main parts : thin, stiff and relatively high density faces separated by a thick, light, and weaker core material. In a sandwich construction, the shear deformation of the faces. Therefore, in the calculation of the bending stiffness, the shear effect should be included. In this paper, the minimum weight is selected as an object function, as the weight critical structures are usually composed of these kind of construction. To obtain the minimum weight of sandwich panel, the principle of minimum potential energy is used and as for the design constraints, the allowable bending stress of face material, the allowable shear stress of core material, the allowable value of panel deflection and the wrinkling stress of faces are adopted, as well as the different boundary conditions. For the engineering purpose of sandwich panel design, the results are tabulated, which are calculated by using the nonlinear optimization technique SUMT.

• Bulletin of the Korean Chemical Society
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• v.29 no.7
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• pp.1335-1343
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• 2008

Theoretical studies on the un-catalyzed and catalyzed aminations of ketene with $NH_3$ and $(NH_3)_2$, respectively, were studied using MP2 and hybrid density functional theory of B3LYP at the 6-31+G(d,p) and 6- 311+G(3df,2p) basis sets in the gas phase and in benzene and acetonitrile solvents. In the gas phase reaction, the un-catalyzed mechanism was the same as those previously reported by others. The catalyzed mechanism, however, was more complicated than expected requiring three transition states for the complete description of the C=O addition pathways. In the un-catalyzed amination, rate determining step was the breakdown of enol amide but in the catalyzed reaction, it was changed to the formation of enol amide, which was contradictory to the previous findings. Starting from the gas-phase structures, all structures were re-optimized using the CPCM method in solvent medium. In a high dielectric medium, acetonitrile, a zwitterions formed from the reaction of $CH_2$=C=O with $(NH_3)_2$, I(d), exists as a genuine minimum but other zwitterions, I(m) in acetonitrile and I(d) in benzene become unstable when ZPE corrected energies are used. Structural and energetic changes induced by solvation were considered in detail. Lowering of the activation energy by introducing additional $NH_3$ molecule amounted to ca. −20 $\sim$ −25 kcal/mol, which made catalyzed reaction more facile than un-catalyzed one.

• Korean Journal of Materials Research
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• v.15 no.8
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• pp.491-495
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• 2005

(Zn,Mg)O (ZMO) thin films doped with Ga $(0\~0.03mol\%)$ in the target source were prepared by pulsed laser deposition on c-plane sapphire substrates at $500^{\circ}C$, and the effect of Ga contents on the properties of the electrical, optical and crystal properties of the deposited films was investigated. From X-ray diffraction patterns, ZMO film doped with $0.02 mol\%$ Ga showed crystal structure with c-axis preferred orientation, showing only the (0002) and (0004) diffraction peaks. In contrast, ZMO film doped with $Ga=0.03 mol\%$ showed a randomly oriented crystal structure. All the samples were highly transparent, showing the transmittance values of above $85\%$ in the visible region. For all the Ga doped ZMO films, the value of energy band gap was found to be about 3.5 eV, regardless of their Ga contents. From the Hall measurements, the resistivity and the carrier density for the ZMO film doped with $0.01 mol\%$ Ga were about $5\times10^{-4}\Omega-cm$ and $2\times10^{21}cm^{-3}$, respectively.