• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1295-1300
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• 2008

During the manufacturing and the service life of Au-Al wire bonded electronic packages, the ball bonds experience elevated temperatures and hence accelerated thermal diffusion reactions that promote the transformation of the Au-Al phases and the IMC growth. In this paper, the IC under high temperature storage (HTS) tests at $175^{\circ}C,\;200^{\circ}C$, and $250^{\circ}C$ are meticulously investigated. Thermal exposure resulted in the IMC growth, Kirkendall void and the crack of the Au-Al phases. The crack propagation occurs resulting in the failure of the Au-Al ball bonds. As the IC was exposed at the high temperature, decreased in the lifetime.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.204-209
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• 2017

We have investigated a Mo/Au gate scheme for use in AlGaN/GaN-on-Si HFETs. AlGaN/GaN-on-Si HFETs were fabricated with Ni/Au or Mo/Au gates and their electrical characteristics were compared after thermal stress tests. While insignificant difference was observed in DC characteristics, the Mo/Au gate device exhibited lower on-resistance with superior pulsed characteristics in comparison with the Ni/Au gate device.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1537-1540
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• 2003

MEMS technology with micro scale is complete system utilized as the sensor. micro electro device. The metallization of MEMS is very important to transfer the power operating the sensor and signal induced from sensor part. But in the MEMS structures local stress concentration and deformation is often happened by geometrical shape and different constraint on the metallization. Therefore. this paper studies the effect of supporting type and thickness ratio about thin film thickness of the substrate thickness for the residual stress variation caused by thermal load in the multi-layer thin film. Specimens were made from materials such as Al, Au and Cu and uniform thermal load was applied, repeatedly. The residual stress was measured by FEA and nano-indentation using AFM. Generally, the specimen made of Al induced the large residual stress and the 1st layer made of Al reduced the residual stress about half percent than 2nd layer. Specimen made of Cu and Au being the lower thermal expansion coefficient induce the minimum residual stress. Similarly the lowest indentation length was measured in the Au_Cu specimen by nano-indentation.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.5
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• pp.532-538
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• 2004

MEMS technology applying to the sensors and micro-electro devices is complete system. These microsystems are made by variable processes. Especially, the mentallization process has very important functions to transfer the power operating the sensor and signal induced from sensor part. But in the structures of MEMS the local stress concentration and deformation are often yielded by an irregular geometrical shape and different constraint. Therefore, this paper studies the effect of supporting type and thickness ratio about thin film of the substrate on the residual stress variation when the thermal loads is applied to the multi-layer thin film fabricated by metallization process. Specimens were made from several materials such as Al, Au and Cu. Then, uniform thermal load was applied, repeatedly. The residual stress was measured by FE Analysis and nano-indentation method using AFM. Generally, the specimen made of Al induced the larger residual stress than that of made of other materials. Specimen made of Cu and Au having the low thermal expansion coefficient induces the minimum residual stress. Similarly, the lowest indentation length was measured by nano-indentation method in the Si/Au/Cu specimen. Particularly, clusters are created in the specimen made of Cu by thermal load and the indentation length became increasingly large by cluster formation.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.11
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• pp.2277-2286
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• 2002

The application of bonded dissimilar materials to industries as automobiles, aircraft, rolling stocks, electronic devices and engineering structures is increasing gradually because these materials, compared to the homogeneous materials, have many advantages for material properties. In spite of such wide applications of bonded dissimilar materials, the evaluation method of quantitative strength considering the stress singularities for its bonded interface has not been established clearly. In this paper, the stress singularity for Bctors and the stress intensity factors were analyzed by boundary element method(BEM) for the scarf joints of Al/Epoxy with and without a crack, respectively. From static fracture experiments of the bonded scarf joints, a fracture criterion and a evaluation method of interface strength in bonded dissimilar materials were proposed and discussed.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.27 no.5
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• pp.705-712
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• 2003

Analysis for the thermal stress distribution in the laminated plates containing a hot-spot(local heating region) is performed. It is assumed that the local heating region induces only mechanical stress by the thermal expansion but effect of the thermal conduction is neglected. The region is regarded equivalent to a homogeneous inclusion expanding in a laminated medium. As an example, Au/YBCO/Al$_2$O$_3$laminate which is often employed for High Temperature Superconducting Fault Current Limiter(HTS FCL) has been analyzed. Effects of heat input, thickness of each layer and the got spot size upon the stress distribution in the hot-spot have been investigated. For a constant heat generation into the hot-spot, as the thickness of the Al$_2$O$_3$substrate increases, the stress in the YBCO layer is peculiarly oscillated, and the curvature of laminate has a maximum at a certain thickness of the Al$_2$O$_3$.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.9
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• pp.135-141
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• 2003

MEMS structures generally have been fabricated using surface-machining method, but the interface failure between silicon substrate and evaporated thin film frequently takes place due to the residual stress inducing by the applied the various loads. And the very important physical property in the heated environment is the linear coefficient of thermal expansion. Therefore this paper studied the residual stress caused the thermal loads in the thin film and introduced the simple method to measure the trend of the residual stress by the indentation. Specimens were made of materials such as Al, Au and Cu and thermal load was applied repeatedly. The residual stress was measured by nano-indentation using AFM and FEA. The existence of the residual stress due to thermal load was verified by the experimental results. The indentation length of the thermal loaded specimens increased minimum 11.8％ comparing with the virgin thin film caused by tensile residual stress. The finite element analysis results are similar to indentation test.

• Transactions on Electrical and Electronic Materials
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• v.14 no.4
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• pp.172-176
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• 2013

Microelectromechanical system switches are becoming more and more popular in the electronics industry; there is a need for careful selection of the materials in the design and fabrication of switches for reliability and performance issues. The membrane used for actuation to change the state of an RF switch is made mostly using gold or aluminum. Various designs of membranes have been proposed. Due to the flexure-type structures, the design complexity increases, which makes stress analysis mandatory to validate the reliability and performance of a switch. In this paper, the effective stress and actuation voltage required for different types of fixed-fixed membranes is analyzed using finite element modeling. Effective measures are presented to reduce the stress and voltage.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.178-178
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• 2016

Every display is equipped with a cover glass to protect the underneath displaying devices from mechanical and environmental impact during its use. The strengthened glass such as Gorilla glass.$^{TM}$ has been exclusively adopted as a cover glass in many displays. Conventionally, the strengthened glass has been manufactured via ion-exchange process in wet salt bath at high temperature of around $500^{\circ}C$ for hours of treatment time. During ion-exchange process, Na ions with smaller diameter are substituted with larger-diameter K ions, resulting in high compressive stress in near-surface region and making the treated glass very resistant to scratch or impact during its use. In this study, PIIID (plasma immersion ion implantation and deposition) technique was used to implant metal ions into the glass surface for strengthening. In addition, due to the plasmonic effect of the implanted metal ions, the metal-ion implanted glass samples got colored. To implant metal ions, plasma immersion ion implantation technique combined with HiPIMS method was adopted. The HiPIMS pulse voltage of up to 1.4 kV was applied to the 3" magnetron sputtering targets (Cu, Ag, Au, Al). At the same time, the sample stage with glass samples was synchronously pulse-biased via -50 kV high voltage pulse modulator. The frequency and pulse width of 100 Hz and 15 usec, respectively, were used during metal ion implantation. In addition, nitrogen ions were implanted to study the strengthening effect of gas ion implantation. The mechanical and optical properties of implanted glass samples were investigated using micro-hardness tester and UV-Vis spectrometer. The implanted ion distribution and the chemical states along depth was studied with XPS (X-ray photo-electron spectroscopy). A cross-sectional TEM study was also conducted to investigate the nature of implanted metal ions. The ion-implanted glass samples showed increased hardness of ~1.5 times at short implantation times. However, with increasing the implantation time, the surface hardness was decreased due to the accumulation of implantation damage.