• Journal of applied mathematics & informatics
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• 제5권2호
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• pp.277-284
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• 1998

The reliability and an estimate for it are derived for series-parallel and parallel-deries stress-strength model under assumption that all components are subjected to a common stress. We also obtain the asymptotic normal distribution of the estimate.

• 한국전기전자재료학회논문지
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• 제21권4호
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• pp.296-299
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• 2008

The effects of radio frequency (RF) source power for decoupled plasma nitridation (DPN) process on the electrical properties and Fowler-Nordheim (FN) stress immunity of the oxynitride gate dielectrics for deep nano-technology devices has been investigated. With increase of RF source power, the threshold voltage (Vth) of a NMOS transistor(TR) decreased and that of a PMOS transistor increased, indicating that the increase of nitrogen incorporation in the oxynitride layer due to higher RF source power induced more positive fixed charges. The improved off-current characteristics and wafer uniformity of PMOS Vth were observed with higher RF source power. FN stress immunity, however, has been degenerated with increasing RF source power, which was attributed to the increased trap sites in the oxynitride layer. With the experimental results, we could optimize the DPN process minimizing the power consumption of a device and satisfying the gate oxide reliability.

• Transactions on Electrical and Electronic Materials
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• 제14권4호
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• pp.172-176
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• 2013

Microelectromechanical system switches are becoming more and more popular in the electronics industry; there is a need for careful selection of the materials in the design and fabrication of switches for reliability and performance issues. The membrane used for actuation to change the state of an RF switch is made mostly using gold or aluminum. Various designs of membranes have been proposed. Due to the flexure-type structures, the design complexity increases, which makes stress analysis mandatory to validate the reliability and performance of a switch. In this paper, the effective stress and actuation voltage required for different types of fixed-fixed membranes is analyzed using finite element modeling. Effective measures are presented to reduce the stress and voltage.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.395-398
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• 2000

Reactive radio frequency (RF)magnetron sputter with incident angle has been used to deposit AlN thin film on a crystalline Si substrate. (002)Preferred orientation of AlN thin film has been obtained at low sputtering pressure. Also it has been shown that depostion rate of AIN thin film is affected by fraction Ar and $N_2$ partial pressure. But substrate temperature didn't affect depostion rate of AIN thin film . As sputtering pressure increased preferred orientation degraded. The internal stress changed from tensile stress to compressive stress as fraction of $N_2$ partial pressure increased. At low nitrogen partial pressure cermet$^{[1]}$ AIN thin film is obtained.

• 대한기계학회논문집
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• 제10권2호
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• pp.208-214
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• 1986

본 연구에서는 균열 닫힘에 관한 연구의 일환으로 5083-O 알루미늄합금을 사용하고 소규모강복조건하에서 일정진폭하중피로시험을 시행하여 이 재료의 피로균열 진전속도와 균열닫힘에 관하여 검토하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 추계학술발표강연 및 논문개요집
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• pp.57-57
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• 2002

• 한국해양공학회지
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• 제15권3호
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• pp.58-62
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• 2001

The objective of research is to clarify the interaction between dislocations and precipitates during high temperature creep deformation behaviors of high n austenitic steels. After measuring the internal stress in minimum creep rate state under applied stress of 236MPa at 873K, a transmission electron microscope (TEM) observation was performed to investigate the interaction between dislocations and precipitates during high temperature creep deformation. The band widths and values of internal stress increased when the nitride precipitates distribute more densely. Fine nitrides disturbed the dislocation movement with pinning the dislocations and perfect dislocations were separated into Shockley partial dislocations by fine nitrides. Coarse nitrides disturbed the dislocation movement with climb mechanism.

• Transactions on Electrical and Electronic Materials
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• 제18권1호
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• pp.51-54
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• 2017

TFTs (thin film transistors) were fabricated using a-SIZO (amorphous silicon-indium-zinc-oxide) channel by RF (radio frequency) magnetron sputtering at room temperature. We report the influence of various channel thickness on the electrical performances of a-SIZO TFTs and their stability, using TS (temperature stress) and NBTS (negative bias temperature stress). Channel thickness was controlled by changing the deposition time. As the channel thickness increased, the threshold voltage ($V_{TH}$) of a-SIZO changed to the negative direction, from 1.3 to -2.4 V. This is mainly due to the increase of carrier concentration. During TS and NBTS, the threshold voltage shift (${\Delta}V_{TH}$) increased steadily, with increasing channel thickness. These results can be explained by the total trap density ($N_T$) increase due to the increase of bulk trap density ($N_{Bulk}$) in a-SIZO channel layer.

• Transactions on Electrical and Electronic Materials
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• 제16권4호
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• pp.173-178
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• 2015

In lieu of the excellent radio frequency (RF) performance of microelectromechanical system ( MEMS) switches, these micro switches need higher actuation voltage for their operation. This requirement is secondary to concerns over the swtiches’ reliability. This paper reports high reliability operation of RF MEMS switches with low voltage requirements. The proposed switch is optimised to perform in the Q-band, which results in actuation voltage of just 16.4 V. The mechanical stress gradient in the thin micro membrane is computed by simulating von Mises stress in a multi-physics environment that results in 90.4 MPa stress. The computed spring constant for the membrane is 3.02 N/m. The switch results in excellent RF performance with simulated isolation of above 38 dB, insertion loss of less than 0.35 dB and return loss of above 30 dB in the Q-band.

• 한국해양공학회:학술대회논문집
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• 한국해양공학회 2001년도 춘계학술대회 논문집
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• pp.332-337
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• 2001

The objective of research is to clarify the interaction between dislocations and precipitates during high temperature creep deformation behaviors of high Mn austenitic steels. After measuring the internal stress in minimum creep rate at 873K, a transmission electron microscope (TEM) observation was performed to investigate the interaction between dislocations and precipitates during high temperature creep deformation. The band width of effective stress and internal stress increased when the nitride precipitates distribute more densely. Fine nitrides disturbed the dislocation movement with pinning the dislocations and perfect dislocations were separated into Shockley partial dislocations by fine nitrides. Coarse nitrides disturbed the dislocation movement with climb mechanism.