• 제목/요약/키워드: Storage stack

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A Comparative Analysis: Various Storage Rules in Container Yards and Their Performances

  • Ma, Yaowen;Kim, Kap-Hwan
    • Industrial Engineering and Management Systems
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    • 제11권3호
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    • pp.276-287
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    • 2012
  • Determining storage locations of containers is an important issue for efficient operation of container terminals. This study assumes a storage yard with a horizontal layout in which blocks are laid out in parallel to the quay and trucks enter at the side of a block to deliver (receive) a container to (from) the yard crane. Various storage rules for determining storage locations of containers are introduced. Simulation studies are conducted for evaluating various rules. The following guidelines are derived from the result of our simulation study: when designing a block, consider a block configuration in which the longest gantry and the longest trolley travel times of rail-mounted gantry cranes (RMGCs) are similar; do not restrict the types of containers that can be stored in a storage area; if different roles are to be assigned to different storage areas, one possible way is to divide a bay into two areas so that some rows in the bay are allocated to inbound containers while the other rows in the same bay are allocated to outbound containers; reserve the space in bay unit for a high productivity of RMGCs but reserve the space in stack unit when the storage space is not enough; when the storage space is not sufficient, allocate storage location in a way of starting from the end and ending at the middle of a block; for reducing the travel distance of internal trucks, provide a higher priority to a block nearer to the berthing position of the corresponding vessel.

HI 농축을 위한 전해-전기투석 셀의 스케일-업에 관한 연구 (Study on Scale-up of Electro-Electrodialysis [EED] Cell for HI Concentration)

  • 이상호;홍성대;김정근;황갑진;문일식
    • 한국수소및신에너지학회논문집
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    • 제18권4호
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    • pp.458-463
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    • 2007
  • An experimental study on scale-up of Electro-electrodialysis(EED) to increase the efficiency of HI decomposition section in the IS(Iodine-Sulfur) process was carried out. The EED stack extends the effective area of the membrane to 20 times of that formerly used in a single EED unit cell. The experiment was carried out using HIx solution($HI:H_2O:I_2=1:8.4{\sim}9:1.85{\sim}1.9$) at $100^{\circ}C$ and various solution flow rates of 20, 30, 40 and 50 cc/min. The increased HI molality in catholyte after one-pass throughout from the EED stack was 3 mol/kg-$H_2O$, 2.2 mol/kg-$H_2O$, 2 mol/kg-$H_2O$ and 1.37 mol/kg-$H_2O$ at 20, 30, 40 and 50 cc/min, respectively. These values satisfied the target of HI molality(the increase of HI molality: 2 mol/kg-$H_2O$) in the IS process for hydrogen production of 20 L/hr.

캔틸레버형 광 정보저장에서의 빠른 팁/매체 간극제어를 위한 팁/구동기의 동역학적 분석 (Dynamic Analysis of Tip-actuators for Controlling Tip-media Gap in Cantilever Type Optical Data Storage)

  • 이성규;송기봉;김준호;김은경;박강호;남효진;이선영;김영식
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2003년도 춘계학술대회논문집
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    • pp.1004-1008
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    • 2003
  • Near-filed optical storage using cantilever aperture tip is a promising way fer next generation optical data storage. To enhance the speed of reading and writing data, gap between tip and media should be controlled fast and precisely within near field region. In this paper, several PZT actuators are analyzed far constructing dual servo control algorithm: coarse actuators(stact. PZT, bimorph PZI) for media surface inclination and One actuator(film PZT) for media surface roughness. Dynamic analysis of stack PZT, bimorph PZT, and film PZT are performed through the frequency response. Based on the frequency response and mathematical model, fast analog controller is designed.

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Improvement of Storage Performance by HfO2/Al2O3 Stacks as Charge Trapping Layer for Flash Memory- A Brief Review

  • Fucheng Wang;Simpy Sanyal;Jiwon Choi;Jaewoong Cho;Yifan Hu;Xinyi Fan;Suresh Kumar Dhungel;Junsin Yi
    • 한국전기전자재료학회논문지
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    • 제36권3호
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    • pp.226-232
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    • 2023
  • As a potential alternative to flash memory, HfO2/Al2O3 stacks appear to be a viable option as charge capture layers in charge trapping memories. The paper undertakes a review of HfO2/Al2O3 stacks as charge trapping layers, with a focus on comparing the number, thickness, and post-deposition heat treatment and γ-ray and white x-ray treatment of such stacks. Compared to a single HfO2 layer, the memory window of the 5-layered stack increased by 152.4% after O2 annealing at ±12 V. The memory window enlarged with the increase in number of layers in the stack and the increase in the Al/Hf content in the stack. Furthermore, our comparison of the treatment of HfO2/Al2O3 stacks with varying annealing temperatures revealed that an increased annealing temperature resulted in a wider storage window. The samples treated with O2 and subjected to various γ radiation intensities displayed superior resistance. and the memory window increased to 12.6 V at ±16 V for 100 kGy radiation intensity compared to the untreated samples. It has also been established that increasing doses of white x-rays induced a greater number of deep defects. The optimization of stacking layers along with post-deposition treatment condition can play significant role in extending the memory window.

5kW급 고분자전해질 연료전지 시스템 실증연구 (Field study of 5kW class PEMFC system)

  • 이수재;최대현;전희권
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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    • pp.87.1-87.1
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    • 2011
  • The residential Fuel Cell system has high efficiency of 85% with transferring natural gas to electrical power and heat, directly and it is a friendly environmental new technology in that $CO_2$ emission can reduce 40% compared with conventional power generator and boiler. The residential fuel cell system consists of two main parts which have electrical and hot storage units. The electrical unit contains a fuel processor, a stack, an inverter, a control unit and balance of plant(BOP), and the cogeneration unit has heat exchanger, hot water tank, and auxiliaries. 5kW class fuel process was developed and tested from 2009, it was evaluated for long-term durability and reliability test including with improvement in optimal operation logic. Stack development was crried out through improvement of design and evaluation protocol. Development of system controller was successfully accomplished through strenuous efforts and original control logic was optimized in 5kW class PEMFC system. In addition, we have been focused on development of system process and assembly technology, which bring about excellent improvement of reliability of system. The 5kW class PEMFC system was operated under dynamic conditions for 1,000 hours and it showed a good performance of total efficiency and durability.

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High density plasma etching of MgO thin films in $Cl_2$/Ar gases

  • Xiao, Y.B.;Kim, E.H.;Kong, S.M.;Chung, C.W.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.213-213
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    • 2010
  • Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is one of the best semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. For the realization of high density MRAM, the etching of MTJ stack with good properties is one of a key process. Recently, there has been great interest in the MTJ stack using MgO as barrier layer for its huge room temperature MR ratio. The use of MgO barrier layer will undoubtedly accelerate the development of MTJ stack for MRAM. In this study, high-density plasma reactive ion etching of MgO films was investigated in an inductively coupled plasma of $Cl_2$/Ar gas mixes. The etch rate, etch selectivity and etch profile of this magnetic film were examined on vary gas concentration. As the $Cl_2$ gas concentration increased, the etch rate of MgO monotonously decreased and etch slop was slanted. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of MgO thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of MgO displayed better etch profiles. Finally, the clean and vertical etch sidewall of MgO films was achieved using $Cl_2$/Ar plasma at the optimized etch conditions.

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슬림광디스크드라이브를 위한 고감도 3축구동 액추에어터 (High Sensitivity 3-axis Actuator for Slim Optical Disc Drive)

  • 정영민;이진원;김광
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2002년도 추계학술대회논문집
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    • pp.1000-1003
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    • 2002
  • For high density optical storage, there should be a high NA objective lens and a shorter wavelength laser diode. To secure the disc tilt margin related to the coma aberration, moreover, it's difficult to apply the tilt compensation mechanism into the portable PC. In this paper, we proposed the 3-axis asymmetry pickup actuator with high efficiency symmetric magnetic circuit, which consisted of the top cover type inner yoke for high magnetic flux density, the coil stack unit for the 3-axis independent operation and vertically polarized magnets. This newly suggested actuator features DVD-RAM recording, we achieved the high focus & track AC sensitivity and the greatly stabilized system.

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슬림광디스크드라이브를 위한 고감도 3축구동액추에이터 (High Sensitivity 3-axis Actuator for Slim Optical Disc Drive)

  • Cheong Young Min;Lee Jin Won;Kim Kwang
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2002년도 추계학술대회논문초록집
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    • pp.397.1-397
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    • 2002
  • For high density optical storage, there should be a high NA objective lens and a shorter wavelength laser diode. To secure the disc tilt margin related to the coma aberration, moreover, it's difficult to apply the tilt compensation mechanism into the portable PC. In this paper, we proposed the 3-axis asymmetry pickup actuator with high efficiency symmetric magnetic circuit, which consisted of the top cover type inner yoke for high magnetic flux density, the coil stack unit for the 3-axis independent operation and vertically polarized magnets. (omitted)

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Investigating InSnZnO as an Active Layer for Non-volatile Memory Devices and Increasing Memory Window by Utilizing Silicon-rich SiOx for Charge Storage Layer

  • Park, Heejun;Nguyen, Cam Phu Thi;Raja, Jayapal;Jang, Kyungsoo;Jung, Junhee;Yi, Junsin
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.324-326
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    • 2016
  • In this study, we have investigated indium tin zinc oxide (ITZO) as an active channel for non-volatile memory (NVM) devices. The electrical and memory characteristics of NVM devices using multi-stack gate insulator SiO2/SiOx/SiOxNy (OOxOy) with Si-rich SiOx for charge storage layer were also reported. The transmittance of ITZO films reached over 85%. Besides, ITZO-based NVM devices showed good electrical properties such as high field effect mobility of 25.8 cm2/V.s, low threshold voltage of 0.75 V, low subthreshold slope of 0.23 V/dec and high on-off current ratio of $1.25{\times}107$. The transmission Fourier Transform Infrared spectroscopy of SiOx charge storage layer with the richest silicon content showed an assignment at peaks around 2000-2300 cm-1. It indicates that many silicon phases and defect sources exist in the matrix of the SiOx films. In addition, the characteristics of NVM device showed a retention exceeding 97% of threshold voltage shift after 104 s and greater than 94% after 10 years with low operating voltage of +11 V at only 1 ms programming duration time. Therefore, the NVM fabricated by high transparent ITZO active layer and OOxOy memory stack has been applied for the flexible memory system.

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