• Title/Summary/Keyword: Static power

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Current Control Method of Distribution Static Compensator Considering Non-Linear Loads (비선형 부하를 고려한 배전용 정지형 보상기의 전류제어 기법)

  • Kim, Dong-Geun;Choi, Jong-Woo;Kim, Heung-Geun
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.58 no.7
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    • pp.1342-1348
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    • 2009
  • DSTATCOM(distribution static compensator) is one of the custom power devices, and protects a distribution line from unbalanced and harmonic current caused by non-linear and unbalanced loads. Researches about DSTATCOM are mainly divided two parts, one is the calculation of compensated current and the other part is the current control. This paper proposes a proportional-resonant-repetitive current controller. Improved performance of instantaneous power compensation has been shown by simulations and experiments.

Critical Contingency Analysis for a Short-term System Operation Planning in Korea (우리나라 단기계통운용계획을 위한 가혹 상정고장 분석)

  • Lee, Jeobng Ho
    • The Transactions of the Korean Institute of Electrical Engineers A
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    • v.54 no.11
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    • pp.507-517
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    • 2005
  • This paper presents the results of critical contingency analysis for the Korean power system which is performed to identify the impact of the critical contingencies on the Korean power system and set up a short term system operation planning for the purpose of preventing large scale blackout. The static and dynamic simulation is carried out for each critical contingency and the simulation results for each contingency are shown under the peak load condition for the year 2005, 2007 and 2010.

Enhancement of Interface Flow Limit using Static Synchronous Series Compensators

  • Kim Seul-Ki;Song Hwa-Chang;Lee Byoung-Jun;Kwon Sae-Hyuk
    • Journal of Electrical Engineering and Technology
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    • v.1 no.3
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    • pp.313-319
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    • 2006
  • This paper addresses improving the voltage stability limit of interface flow between two different regions in an electric power system using the Static Synchronous Series Compensator (SSSC). The paper presents a power flow analysis model of a SSSC, which is obtained from the injection model of a series voltage source inverter by adding the condition that the SSSC injection voltage is in quadrature with the current of the SSSC-installed transmission line. This model is implemented into the modified continuation power flow (MCPF) to investigate the effect of SSSCs on the interface flow. A methodology for determining the interface flow margin is simply briefed. As a case study, a 771-bus actual system is used to verify that SSSCs enhance the voltage stability limit of interface flow.

A Low Power 16-Bit RISC Microprocessor Using ECRL Circuits

  • Shin, Young-Joon;Lee, Chan-Ho;Moon, Yong
    • ETRI Journal
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    • v.26 no.6
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    • pp.513-519
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    • 2004
  • This paper presents a low power 16-bit adiabatic reduced instruction set computer (RISC) microprocessor with efficient charge recovery logic (ECRL) registers. The processor consists of registers, a control block, a register file, a program counter, and an arithmetic and logical unit (ALU). Adiabatic circuits based on ECRL are designed using a $0.35{\mu}m$ CMOS technology. An adiabatic latch based on ECRL is proposed for signal interfaces for the first time, and an efficient four-phase supply clock generator is designed to provide power for the adiabatic processor. A static CMOS processor with the same architecture is designed to compare the energy consumption of adiabatic and non-adiabatic microprocessors. Simulation results show that the power consumption of the adiabatic microprocessor is about 1/3 compared to that of the static CMOS microprocessor.

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Study on Modeling of GaN Power FET (GaN Power FET 모델링에 관한 연구)

  • Kang, Ey-Goo;Chung, Hun-Suk;Kim, Beum-Jun;Lee, Young-Hun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.51-51
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    • 2009
  • In this paper, we proposed GaN trench Static Induction Transistor(SIT). Because The compound semiconductor had superior thermal characteristics, GaN and SiC power devices is next generation power semiconductor devices. We carried out modeling of GaN SIT with 2-D device and process simulator. As a result of modeling, we obtained 340V breakdown voltage. The channel thickness was 3um and the channel doping concentration is 1e17cm-3. And we carried out thermal characteristics, too.

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Study on Modeling of GaN Power FET (GaN Power FET 모델링에 관한 연구)

  • Kang, Ey-Goo;Chung, Hun-Suk;Kim, Beum-Jun;Lee, Young-Hun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.12
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    • pp.1018-1022
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    • 2009
  • In this paper, we proposed GaN trench Static Induction Transistor(SIT). Because The compound semiconductor had superior thermal characteristics, GaN and SiC power devices is next generation power semiconductor devices. We carried out modeling of GaN SIT with 2-D device and process simulator. As a result of modeling, we obtained 340 V breakdown voltage. The channel thickness was 3 urn and the channel doping concentration is $1e17\;cm^{-3}$. And we carried out thermal characteristics, too.

Static VAR Compensator Using PWM Voltage type Converter (PWM전압형 콘버어터에 의한 정지형 무효전력 보상장치)

  • 정연택;이훈구;황락훈
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.39 no.8
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    • pp.836-846
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    • 1990
  • This paper presents a Static Var Compensator (SVC) system compensating the reactive power for power system, which consists of a voltage type Pulse Width Modulation (PWM) converter and a reactance linking the converter to the source. The system drives the four quadrant modes. The system determines the magnitude of the input voltage, and then compares it with the magnitude of the source voltage by regulating the phase of the SVC about the source. Therefore, the system generates leading compensation currents when the input voltage is larger than the source in magnitude, and lagging compensation currents for smaller input voltage. Reactive power about voluntary load in power system is smoothly compensated by those compensation currents, and also power factor of source is improved. Furthermore, the SVC system using PWM method may improve the source current waveforms by eliminating the 5th and 7th harmonic components from the input voltages.

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Control Algorithms of Large Synchronous Machines for Starting Gas Turbosets

  • Hwang, Seon-Hwan;Kim, Jang-Mok;Ryu, Ho-Seon;Yoon, Gi-Gab
    • Journal of Power Electronics
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    • v.9 no.2
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    • pp.146-155
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    • 2009
  • The static frequency converter (SFC) systems are used as a method of driving large synchronous machines in many power and industrial plants. In this paper, new control algorithms of SFC systems for starting gas turbo sets are proposed for a four quadrant operation: start-up at standstill; an acceleration up to the speed of the rated voltage; field weakening to reach the rated speed; synchronization to the main alternating current (AC) source; and dynamic braking to stop safely within the rating of the synchronous machine. Experimental results show that the proposed algorithms are proper and effective.

Optimal Protecting the Static Excitation Equipment and Rotor Windings of Synchronous Machines Against Overvoltage (대용량 발전기 정지형 여자시스템 계자회로에 발생되는 최적 과전압 억제 회로)

  • Lim, I.H.;Ryu, H.S.;Kim, S.Y.
    • Proceedings of the KIEE Conference
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    • 1998.07f
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    • pp.1914-1918
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    • 1998
  • In the case of synchronous machines, certain power system disturbances cause the induced rotor current to assume negative values when no static converter is present. A converter, however. prevents negative current from flowing, so that overvoltages occur. The overvoltages can be effectively limited as crowbar circuit using GTO. This newly proposed crowbar circuit with current limiting resistor absorbs energy when overvoltage comes from power system repeatedly and is verified through experiment.

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